• 한국초전도학회:학술대회논문집
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• 2009.07a
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• pp.37-37
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• 2009

• 한국초전도학회:학술대회논문집
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• v.12
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• pp.4-4
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• 2002

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.535-538
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• 2000

We have investigated the photoinduced anisotropy in chalcogenide $As_{40}Ge_{10}Se_{15}S_{35}$ thin films, non-doped and photodoped by Ag and Cu. The films were exposed by the linearly polarized He-Ne laser light( $\lambda$=632.8nm). The Ag and Cu photodoping resulted in reducing the time of saturation photoinduced linearly dichroism. Also photoinduced linearly dichroism was increased up to maximum 184% by Ag photodoping and 138% by Cu photodoping, respectively. As the result of this study, the linearly dichroism can be interesting for different applications of photoinduced anisotropy. In addition, it will offer lots of information for the photodoping mechanism and analysis of chalcogenide thin film.

• Journal of Ceramic Processing Research
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• v.20 no.1
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• pp.30-34
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• 2019

Copper (Cu)-incorporated silica aerogel was synthesized by a sol-gel process with two-step drying process for color modification. The microstructure of the silica aerogel was not affected significantly by the Cu concentration and an amorphous structure was maintained without any crystalline impurity phases. The textural properties of the silica aerogels investigated by using N2 adsorption-desorption isotherms exhibited the typical features of mesoporous materials. The pore size and porosity were not changed significantly even with the incorporation of Cu up to 1.5 M, which indicates negligible variation of thermal insulating properties. However, the color of the aerogel changed from white and light greenish to dark greenish with increasing Cu content. The color change of the silica aerogel was due to the modification of the electron energy band structure of silica by the Cu atomic levels. Therefore, the color of the silica aerogel powders could be manipulated by incorporating Cu without degrading the thermal insulating properties.

• 한국초전도학회:학술대회논문집
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• v.13
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• pp.26-26
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• 2003

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.21 no.4
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• pp.175-180
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• 2011

The doping effect of Cu in the Sr-doped lanthan manganites (LSM) has been investigated in terms of structural analysis and thermal expansion coefficient (TEC). The $La_{0.8}Sr_{0.2}Mn_{1-x}Cu_xO_3$ ($0{\leq}x{\leq}0.3$) were prepared by solid state reaction method and their crystal structure and TEC were measured. A decrease in the lattice parameters and the TEC were observed with increase eu content, whereas they were decreased for x = 0.3. For $0{\leq}x{\leq}0.2$, the decrease of the lattice parameter and the TEC with increase Cu content were attributed to the reduction of ionic radius of Cu ions due to the presence of $Cu^{3+}$ ions. For x = 0.3, however, the increase was originated from the formation of oxygen vacancies due 10 the presence of $Cu^{2+}$ and $Mn^{4+}$.

• Transactions on Electrical and Electronic Materials
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• v.15 no.1
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• pp.24-27
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• 2014

In this study, the effects of Mn-doping and the electrode materials on the memory characteristics of $ZnO_xS_{1-x}$ resistive random access memory (ReRAM) devices on plastic are investigated. Compared with the undoped Al/$ZnO_xS_{1-x}$/Au and Al/$ZnO_xS_{1-x}$/Cu devices, the Mn-doped ones show a relatively higher ratio of the high resistance state (HRS) to low resistance state (LRS), and narrower resistance distributions in both states. For the $ZnO_xS_{1-x}$ devices with bottom electrodes of Cu, more stable conducting filament paths are formed near these electrodes, due to the relatively higher affinity of copper to sulfur, compared with the devices with bottom electrodes of Au, so that the distributions of the set and reset voltages get narrower. For the Al/$ZnO_xS_{1-x}$/Cu device, the ratio of the HRS to LRS is above $10^6$, and the memory characteristics are maintained for $10^4$ sec, which values are comparable to those of ReRAM devices on Si or glass substrates.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.22-25
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• 2000

ZnS:Cu,Cl 형광체의 여기 및 발광 스펙트럼 측정 결과 주게인 $Cl^-$ 이온과 받게인 $Cu^+$ 이온 사이의 흡수와 발광에 기인하는 peak과 국소화된 발광 중심인 $(CU_2)^{2+}$ 이온의 흡수와 발광에 기인하는 peak이 관측되었다. CuCl의 첨가량이 증가함에 따라 $Cu^+$ 이온의 농도가 증가하게 되어 $(Cu_2)^{2+}$ 이온에 기안하는 발광으로부터 공명 에너지 전달 (Resonant Energy Transfer)의 확률이 높아지기 때문에 513 nm를 중심으로 하는 발광의 세기가 증가하게 된다. 자체 제작한 ZnS:Cu,Cl 형광체를 이용하여 제작한 소자의 휘도 측정결과 400 Hz, 100 V 에서 CuCl 의 첨가량이 0.2 mole% 일 때 휘도가 최대였고, 진동수가 증가함에 따라 휘도가 포화되는 현상이 나타났다. CuCl의 첨가량이 증가함에 따라 513 nm를 중심으로 하는 발광이 강해지고 CIE 좌표값이 녹색영역으로 이동하게 된다. 진동수가 증가하면 인가된 전압의 유지 시간이 짧아지게 되어 발광의 감쇄시간이 긴 513 nm를 중심으로 하는 발광보다 감쇄시간이 짧은 458 nm를 중심으로 하는 발광이 강해지게 되고, CIE 좌표값이 청색영역으로 이동하게 된다.

• Korean Journal of Materials Research
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• v.13 no.8
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• pp.503-508
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• 2003

The purpose of this study is to investigate the effect of $V_2$$O_{5}$ addition on the Ag and Cu precipitation in the NiCuZn ferrite layers of 7.7${\times}$4.5${\times}$1.0 mm sized multi-layer chip inductors prepared by the screen printing method using 0∼0.5 wt% $V_2$$O_{5}$ -doped ferrite pastes. With increasing the $V_2$$O_{5}$ content and sintering temperature, Ag and Cu oxide coprecipitated more and more at the polished surface of ferrite layers during re-annealing at $840^{\circ}C$. It was thought that during the sintering process, V dissolved in the NiCuZn ferrite lattice and the Ag-Cu liquid phase of low melting point was formed in the ferrite layers due to the Cu segregation from the ferrite lattice and Ag diffusion from the internal electrode. During re-annealing at $840^{\circ}C$, the Ag-Cu liquid phase came out the polished surface of ferrite layers, and was decomposed into the isolated Ag particles and the Cu oxide phase during the cooling process.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1537-1538
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• 2007

ZnS:Cu,Cl phosphor was synthesized by solid-liquid state reaction with two firing steps. Each stage of the process was carefully monitored so that the final product was comparable to commercially-available phosphor. The effect of $Cu^{2+}-doping$ concentration has been investigated on the luminescence characteristics of ZnS:Cu,Cl blue-green phosphors for inorganic electroluminescent device.