• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1993.05a
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• pp.134-136
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• 1993

Using the extended H$\ddot{u}$ckel molecular orbital method in connection with the tight binding model, we have studied electronic structure and related properties of superconducting $YBa_2Cu_3O_{7-x}$ crystals in which O-atoms in regular sites were selectively replaced with F atoms. The calculations are based on the crystal structure of Y-Ba-Cu-O obtained by Beno et al.. We use atomic coordinates that refer to the unrelaxed Y-Ba-Cu-O system. In analogy to the isomerism problem with molecules, we discuss all possible combinations of F-substitutions in O-sites with one, two, and four F atoms. The calculations are carried out within charged clusters model for the analogues of the YBa-free copperoxide. Our results suggest that the electronic structure of the symmetrically F-substituted or F-added compound is closer to that of the oxygen-deficient superconducting compound than that obtained from unsymmetrical substitution. This applies in particular if O is replaced with in an O(1) site. This suggests that superconductivity is very sensitive to the oxygen content of the $CuO_2$ layers.

• Current Photovoltaic Research
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• v.3 no.1
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• pp.21-26
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• 2015

High efficiency $Cu(In,Ga)Se_2$ solar cells are generally prepared above $500^{\circ}C$. Lowering the process temperature can allow wider selection of substrate material and process window. In this paper, the three-stage co-evaporation process widely used to grow CIGS thin film at high temperature was modified to reduce the maximum substrate temperature. Below $400^{\circ}C$ the CIGS films show poor crystal growth and lower solar cell performance, in spite of external Na doping by NaF. As a new approach, Cu source instead of Cu with Se in the second stage was applied on the $(In,Ga)_2Se_3$ precursor at $400^{\circ}C$ and achieved a better crystal growth. The distribution of Ga in the films produce by new method were investigated and solar cells were fabricated using these films.

• Current Photovoltaic Research
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• v.4 no.3
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• pp.114-118
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• 2016

$Cu_{1.8}Zn_{1.2}(Sn_{1-x}Ge_x)S_4$ (CZTGeS) nanocrystals were mechanochemically synthesized from elemental precursor powders without using any organic solvents and any additives. The composition of CZTGeS nanocrystals were systematically varied with different Ge mole fraction (x) from 0.1 to 0.9. The XRD, Raman spectroscopy, high-resolution TEM, and diffuse reflectance studies show that the as-synthesized CZTGeS nanocrystals exhibited consistent changes in various structural and optical properties as a function of x, such as lattice parameters, wave numbers for $A_1$ Raman vibration mode, interplanar distances (d-spacing), and optical bandgap energies. The bandgap energy of the synthesized CZTGeS nanocrystals gradually increases from 1.40 to 1.61 eV with increasing x from 0.1 to 0.9, demonstrating that Ge-doping is useful means to tune the bandgap of mechanochemically synthesized nanocrystals-based kesterite thin-film solar cells. The preliminary solar cell performance is presented with an efficiency of 3.66%.

• Electrical & Electronic Materials
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• v.6 no.6
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• pp.514-522
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• 1993

본 연구에서는 Ag/ 첨가에 의한 YB $a_{2}$C $u_{3}$ $O_{7-{\delta}}$산화물의 초전도 특성 변화를 조사하였다. Ag가 첨가된 YB $a_{2}$C $u_{3-x}$A $g_{x}$ $O_{7-{\delta}}$ 산화물 시료를 만들고 이 시료들에 대한 X-ray 회절분석, IR흡수 스펙트럼분석, 임계온도(Tc)측정 및 자화(M-H)특성 측정등을 통하여 제조된 시료의 물리적 성질을 조사하였다. X-ray 회절실험 결과로 부터 x.leq.0.03인 경우에는 YB $a_{2}$C $u_{3-x}$A $g_{x}$ $O_{7-{\delta}}$가 단일상의 물질로 존재하고 x가 증가함에 따라 불순물상( $Y_{2}$ $O_{3}$, 순Ag)이 나타남을 알 수 있었다. IR흡수의 실험결과에서 Cu와 치환되어 들어간 Ag의 Ag-O 결합에 의한 흡수 스펙트럼(670$cm^{-1}$ /)이 관측되었다. 실험 결과로 부터 치환된 Ag의 양 x가 증가함에 따라 Tc가 조금씩 낮아지는 경향이 있었으며 자화의 세기 및 임계자장( $H_{C2}$)은 급격히 감소함을 알 수 있었고 또 M-H특성곡선에는 히스테리시스 특성이 나타났다.났다..났다.다.

• 한국초전도학회:학술대회논문집
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• v.10
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• pp.1-1
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• 2000

The infinite layer compound $ACuO_2$, (A-Alkaline earth) consists of infinite stacking of $CuO_2$ planes separated only by alkaline earth ions. This compound attracted much attention because it contains only key ingredient of all cuprate high temperature superconductor; $CuO_2$ plane with controllable carrier concentration without charge reservoir block. High pressure synthesis method has been found to be preferable for this system due to its ability of doping various lanthanide ion into A site with larger superconducting volume fraction. But rigorous study on this rudimentary compound has been hindered by insufficient quality of sample. Especially superconductlng volume fraction was often too small to identify its origin. In this presentation, we report high pressure synthesis of $Sr_{0.9}Ln_{0.1}CuO_2$ (Ln=La, Sm). By controlling the heating temperature precisely during high pressure synthesis we could have superconductors with quite high superconducting volume fraction for this compound. The magnetic properties of the graln aligned samples show very different behavior compared to the cuprate high temperature superconductors. Details will be discussed.

• Korean Chemical Engineering Research
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• v.48 no.5
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• pp.654-659
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• 2010

We have investigated the effect of rubrene-doped CuPc hole transport layer on the performance of p-i-n type bulk hetero-junction photovoltaic device with a structure of ITO/PEDOT:PSS/CuPc: rubrene/CuPc:C60(blending ratio 1:1)/C60/BCP/Al and have evaluated the current density-voltage(J-V) characteristics, short-circuit current($J_{sc}$), open-circuit voltage($V_{oc}$), fill factor(FF), and energy conversion efficiency(${\eta}_e$) of the device. By rubrene doping into CuPc hole transport layer, absorption intensity in absorption spectra decreased. However, the performance of p-i-n organic type bulk hetero-junction photovoltaic device fabricated with crystalline rubrene-doped CuPc was improved since rubrene shows higher bandgap and hole mobility compared to CuPc. Increased injection currents have effected on the performance improvement of the present device with energy conversion efficiency(${\eta}_e$) of 1.41%, which is still lower value compared to silicone solar cell and many efforts should be made to improve organic photovoltaic devices.

• Clean Technology
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• v.21 no.3
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• pp.200-206
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• 2015

In order to investigate the effect of cerium oxide addition, Cu-ZnO-CeO₂ catalysts were prepared using co-precipitation method for water gas shift (WGS) reaction. A series of Cu-ZnO-CeO₂ catalyst with fixed Cu Content (50 wt%, calculated as CuO) and a given ceria content (e.g., 0, 5, 10, 20, 30, 40 wt%, calculated as CeO₂) were tested for catalytic activity at a GHSV of 95,541 h^-1, and a temperature range of 200 to 400 ℃. Cu-ZnO-CeO₂ catalysts were characterized by using BET, SEM, XRD, H₂-TPR, and XPS analysis. Varying composition of Cu-ZnO-CeO₂ catlysts led the difference characteristics such as Cu dispersion, and binding energy. The optimum 10 wt% doping of cerium facilitated catalyst reduction at lower temperature and improved the catalyst performance greatly in terms of CO conversion. Cerium oxide added catalyst showed enhanced activities at higher temperature when it compared with the catalyst without cerium oxide. Consequently, ceria addition of optimal composition leads to enhanced catalytic activity which is attributed to enhanced Cu dispersion, lower binding energy, and hindered Cu metal agglomeration.

• The Journal of the Korea Contents Association
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• v.8 no.11
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• pp.18-24
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• 2008

An organic light-emitting diode(OLED) has advantages of low power driving, self light-emitting, wide viewing angle, excellent high resolution, full color, high reproduction, fast response speed, simple manufacturing process, or the like. However, there are still a number of challenges to get over in order to put it to practical use as a high performance display. First of all, the most important thing is to improve the efficiency of the OLED element in order to commercialize it. To this end, its efficiency can be improved by lowering the driving voltage through the improvement of structure of the OLED element and the application of new organic substance. Therefore, in this study, we have manufactured a red OLED element by applying fluorescent dyes to the emitting layer of the element having the structure of ITO/TPD/ Znq2+DCJTB /Znq2/Al and the structure of ITO/CuPc/NPB/ Alq3+DCJTB/Alq3/Al, in order to light-emitting various colors or improve the brightness and the efficiency, and then we have evaluated its electrical and optical characteristics.

• Progress in Superconductivity and Cryogenics
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• v.20 no.4
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• pp.41-45
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• 2018

We have investigated the effect of $Y_2O_3$ nanoparticles on the pinning properties of $Y_2O_3$-doped $GdBa_2Cu_3O_{7-{\delta}}$ (GdBCO) films. Both undoped and $Y_2O_3$-doped GdBCO films were grown on $CeO_2$-buffered MgO (100) single crystal substrates by pulsed laser deposition (PLD) using KrF (${\lambda}=248nm$) laser. The $Y_2O_3$ doping contents were controlled up to ~ 2.5 area% by varying the internal angles of $Y_2O_3$ sectors put on the top surface of GdBCO target. Compared with the $Gd_2O_3$-doped GdBCO films previously reported by our group [1], the $Y_2O_3$-doped GdBCO films exhibited less severe critical temperature ($T_c$) drop and thus slightly enhanced critical current densities ($J_c$) and pinning force densities ($F_p$) at 65 K for the applied field parallel to the c-axis of the GdBCO matrix (B//c) with increasing the doping content. Below 40 K, the in-field $J_c$ and $F_p$ values of all $Y_2O_3$-doped GdBCO films exhibited higher than those of undoped GdBCO film, suggesting that $Y_2O_3$ inclusions might act as effective pinning centers.

• Current Photovoltaic Research
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• v.2 no.1
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• pp.28-35
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• 2014

High-efficiency in $Cu(In,Ga)Se_2$ (CIGS) solar cells were usually achieved on soda-lime glass substrates due to Na incorporation that reduces deep-level defects. However, this supply of sodium from sodalime glass to CIGS through Mo back electrode could be limited at low deposition temperature. Na content could be more precisely controlled by supplying Na from known amount of an outside source. For the purpose, an $Na_2S$ layer was deposited on Mo electrode prior to CIGS film deposition and supplied to CIGS during CIGS film. With the $Na_2S$ underlayer a more uniform component distribution was possible at $350^{\circ}C$ and efficiency was improved compared to the cell without $Na_2S$ layer. With more precise control of bulk and surface component profile, CIGS film can be deposited at low temperature and could be useful for flexible CIGS solar cells.