• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 춘계학술대회 논문집
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• pp.43-44
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• 2009

We fabricated organic field-effect transistors (OFETs) based a fluorinated copper phthalocyanine ($F_{16}CuPc$) as an active layer. And we observed the surface morphology of the $F_{16}CuPc$ thin film. The $F_{16}CuPc$ thin film thickness was 40nm, and the channel length was $50{\mu}m$, channel width was 3mm. We observed the typical current-voltage (I-V) characteristics and capacitance-voltage (C-V) in $F_{16}CuPc$ FET and we calculated the effective mobility.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.504-505
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• 2008

We fabricated organic field-effect transistors (OFETs) based a fluorinated copper phthalocyanine ($F_{16}CuPc$) as an active layer. And we observed the surface morphology of the $F_{16}CuPc$ thin film. The $F_{16}CuPc$ thin film thickness was 40nm, and the channel length was $50{\mu}m$, channel width was 3mm. We observed the typical current-voltage (I-V) characteristics and capacitance-voltage (C-V) in $F_{16}CuPc$ FET and we calculated the effective mobility.

• 한국전기전자재료학회논문지
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• 제16권2호
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• pp.113-119
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• 2003

We report the electrical properties of copper(II)-phthalocyanine(Cu-Pc) as a hole injaction layer in organic light-emitting diode (OLED). OLEDs were constructed by the following material structure : indium tin oxaide (ITO)/ CuPc/ triphenyl-diamine (TPD)/ tris-(8-hydroxyquinoline)aluminum (Alq3)/4-(Dicyanomethlene)-2-methyl-6-(4-dimethylaminostyryl)-4H-pyran (DCM)/ Al. we observed that the change of recombination zone by using a DCM detection thin layer (6 ${\AA}$) in a Alq$_3$ emitting layer. layer. Recombination zone was moved toward the cathode as the hole mobility increased due to the heat-treatment temperature of cupc layer increased.

• 폴리머
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• 제38권5호
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• pp.671-675
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• 2014

본 연구에서는 잘 규정된 4-arm 스타형 및 선형 고분자를 합성하여 구조에 따른 구리 프탈로시아닌(CuPc)의 분산 안정성을 비교하였다. 분산제는 (2-dimethylamino)ethyl methacrylate(DMAEMA)와 poly(ethylene glycol) methyl ether methacrylate(PEGMA)를 사용하여 activators generated by electron transfer(AGET) 원자이동라디칼중합법(ATRP)으로 합성하였다. 합성된 고분자는 젤투과 크로마토그래피(GPC)와 핵자기 공명 분광법(NMR)을 사용하여 합성한 고분자들의 분자량 및 단량체의 조성을 결정하였다. 4-Arm 스타형 고분자 및 선형 고분자 분산제에서 stabilizing group인 PEGMA의 중합도를 조절하여 copper phthalocyanine(CuPc)의 분산 안정성에 미치는 영향을 연구하였다. PEGMA의 DP가 130인 4-arm 스타형 고분자를 사용한 경우 $25^{\circ}C$에서 7일 동안 CuPc의 분산상이 안정적으로 유지되었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.460-463
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• 2003

We report the microwave reflection coefficient $S_{11}$ of copper(II)-phthalocyanine(CuPc) using a near-field microwave microscope(NSMM) in order to understand the intrinsic electromagnetic properties of organic materials. For a NSMM system, a high-quility microstip resonator coupled with a dielectric resonator was used. The reflection coefficient $S_{11}$ was changed by the preparation conditions of CuPc thin films. We compared the reflection coefficient with crystal phase, surface morphology, UV absorption spectra and x-ray diffraction results.

• Journal of information and communication convergence engineering
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• 제13권4호
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• pp.257-263
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• 2015

In this study, organic field-effect transistors (OFETs) using a copper phthalocyanine (CuPc) material as an active layer and SiO₂ as a gate insulator were fabricated with varying active layer thicknesses and channel lengths. Further, using a thermal evaporation method in a high-vacuum system, we fabricated a CuPc FET device of the top-contact type and used Au materials for the source and drain electrodes. In order to discuss the channel formation and FET characteristics, we observed the typical current-voltage characteristics and calculated the threshold voltage of the CuPc FET device. We also found that the capacitance reached approximately 97 pF at a negative applied voltage and increased upon the accumulation of carriers at the interface of the metal and the CuPc material. We observed the typical behavior of a FET when used as an n-channel FET. Moreover, we calculated the threshold voltage to be about 15-20 V at V_DS = -80 V.

• 전기화학회지
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• 제18권3호
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• pp.130-135
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• 2015

흑연 분말을 프탈로시아닌 또는 구리 프탈로시아닌과 함께 비활성 분위기에서 각각 열처리하여 표면처리를 진행하였고, 이의 속도특성과 저온 작동특성을 조사하였다. 표면처리 후 흑연 분말의 표면에 비정질 탄소와 구리의 코팅 층이 균일하게 형성되었다. 표면처리를 통하여 흑연 전극의 속도특성이 개선되는 것을 확인하였는데, 특히 구리 프탈로시아닌으로 처리한 경우 속도특성의 향상이 두드러졌다. 흑연 전극의 저항을 교류 임피던스와 펄스 저항측정법을 활용하여 조사하였는데, 구리 프탈로시아닌으로 처리된 흑연 전극의 경우가 저항이 가장 작았다. 프탈로시아닌으로 부터 유도된 비정질 탄소 층이 리튬이온의 확산을 용이하게 하고, 구리 프탈로시아닌으로부터 유도된 금속상태의 구리는 전자 전도도를 증가시키기 때문에 저항을 감소시키는 것으로 판단된다.

• Progress in Superconductivity
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• 제3권1호
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• pp.41-44
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• 2001

We report the current transport properties of a normal metal/organic conductor/ superconductor tunnel junction as a novel high- $T_{c}$ superconducting three terminal device. The organic copper (II) phthalocyanine (Cu-Pc) layer was used far a polaronic quasiparticle (QP) injector. The injection of polaronic QP from the Cu-Pc interlayer into a superconductor $Bi_2$$Sr_2$$CaCu_2$ $O_{8+}$ $\delta$/(BSCCO) thin film generated a substantially larger nonequilibrium effect as compared to the normal QP injection current. The tunneling spectroscopy of an Au/cu-PC/BSCCO junction exhibited a zero bias conductance peak which may be due to Andreev reflection at a Cu-Pc/d-wave superconductor junction.n..

• 공업화학
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• 제23권2호
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• pp.138-142
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• 2012

블루 안료 15 : 6이라 불리는 ${\epsilon}$ 결정상의 동프탈로시아닌(${\epsilon}$-CuPc)는 LCD 패널에서 청색화소를 제공하는 중요한 소재로써, 본 연구에서는 ${\epsilon}$-CuPc 시료를 ${\epsilon}$-CuPc 나노 입자를 seed로 이용하는 방법으로 여러 조건에서 합성하여 적합한 용매 및 온도조건 등을 규명하였고, 이를 미리 합성한 ${\alpha}$ 및 ${\beta}$ 결정상의 CuPc 시료들과 비교함으로써 ${\epsilon}$-CuPc 시료의 결정상, 결정 순도, 합성 수율 및 미세구조를 상호 비교 분석하였다. 시료들의 화학 구조 및 결정 구조는 푸레어 변환 적외선(FT-IR) 분광기 및 X선 회절 분석기(XRD)를 이용하여 각각 비교 분석하였다. 또한, 입자의 형상 및 크기는 주사 전자현미경(FE-SEM)으로 비교 분석하였고, 열적 특성은 열중량분석기(TGA)를 이용하여 비교 분석하였다.

• Macromolecular Research
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• 제14권1호
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• pp.38-44
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• 2006

Vacuum deposited copper phthalocyanine (CuPc) was placed as a thin interlayer between indium tin oxide (ITO) electrode and a hole transporting layer (HTL) in a multi-layered, organic, light-emitting diode (OLEOs). The well-stacked CuPc layer increased the stability and efficiency of the devices. Thermal annealing after CuPc deposition and magnetic field treatment during CuPc deposition were performed to obtain a stacked-CuPc layer; the former increased the stacking density of the CuPc molecules and the alignment of the CuPc film. Thermal annealing at about 100$^{circ}C$ increased the current flow through the CuPc layer by over 25$\%$. Surface roughness decreased from 4.12 to 3.65 nm and spikes were lowered at the film surface as well. However, magnetic field treatment during deposition was less effective than thermal treatment. Eventually, a higher luminescence at a given voltage was obtained when a thermally-annealed CuPc layer was placed in the present, multi-layered, ITO/CuPc/NPD/Alq3/LiF/AI devices. Thermal annealing at about 100$^{circ}C$ for 3 h produced the most efficient, multi-layered EL devices in the present study.