• Transactions of the Korean Society of Mechanical Engineers A
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• v.34 no.7
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• pp.929-933
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• 2010

Four-point bending tests were performed to investigate the interfacial adhesion of Cu-Cu bonding fabricated by thermo-compression process for three dimensional packaging. A pair of Cu-coated Si wafers was bonded under a pressure of 15 kN at $350^{\circ}C$ for 1 h, followed by post annealing at $350^{\circ}C$ for 1 h. The bonded wafers were diced into $30\;mm\;{\times}\;3\;mm$ pieces for the test. Each specimen had a $400-{\mu}m$-deep notch along the center. An optical inspection module was installed in the testing apparatus to observe crack initiation at the notch and crack propagation over the weak interface. The tests were performed under a fixed loading speed, and the corresponding load was measured. The measured interfacial adhesion energy of the Cu-to-Cu bonding was $9.75\;J/m^2$, and the delaminated interfaces were analyzed after the test. The surface analysis shows that the delamination occurred in the interface between $SiO_2$ and Ti.

• Journal of the Microelectronics and Packaging Society
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• v.20 no.1
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• pp.7-13
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• 2013

3D stacked IC is one of the promising candidates which can keep Moore's law valid for next decades. IC can be stacked through various bonding technologies and they were reviewed in this report, for example, wafer direct bonding and atomic diffusion bonding, etc. As an effort to reduce the high temperature and pressure which were required for high bonding strength in conventional Cu-Cu thermo-compression bonding, surface activated bonding, solid liquid inter-diffusion and direct bonding interface technologies are actively being developed.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.06a
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• pp.499-502
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• 2005

A process map has been developed, which can identify the process conditions for weak mechanical bonding at the contact surface during the direct extrusion of a Cu-Ti bimetal bar. Bonding mechanism between Cu and Ti was assumed as a cold pressure welding. Then, the plastic deformation at the contact zone causes mechanical bonding and a new bonding criterion for pressure welding was developed as a function of the principal stretch ratio and normal pressure at the contact surface by analyzing micro local extrusion at the contact zone. Finite element analyses for extrusion of Cu-Ti bimetal bars were performed for various process conditions. The deformation history at the contact surface was traced and the proposed new bonding criterion was applied to predict whether the mechanical bonding at the Cu-Ti contact surface happens. Finally, a process map for the extrusion of Cu-Ti bimetal bar is suggested.

• Journal of the Microelectronics and Packaging Society
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• v.27 no.1
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• pp.17-24
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• 2020

As an interconnect scaling faces a technical bottleneck, the device stacking technologies have been developed for miniaturization, low cost and high performance. To manufacture a stacked device structure, a vertical interconnect becomes a key process to enable signal and power integrities. Most bonding materials used in stacked structures are currently solder or Cu pillar with Sn cap, but copper is emerging as the most important bonding material due to fine-pitch patternability and high electrical performance. Copper bonding has advantages such as CMOS compatible process, high electrical and thermal conductivities, and excellent mechanical integrity, but it has major disadvantages of high bonding temperature, quick oxidation, and planarization requirement. There are many copper bonding processes such as dielectric bonding, copper direct bonding, copper-oxide hybrid bonding, copper-polymer hybrid bonding, etc.. As copper bonding evolves, copper-oxide hybrid bonding is considered as the most promising bonding process for vertically stacked device structure. This paper reviews current research trends of copper bonding focusing on the key process of Cu-SiO₂ hybrid bonding.

• Advances in Computational Design
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• v.4 no.1
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• pp.33-41
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• 2019

In this study, 2-mm Al/Cu bimetallic laminates were produced using asymmetric roll bonding (RB) process. The asymmetric RB process was carried out with thickness reduction ratios of 10%, 20% and 30% and mismatch rolling speeds 1:1, 1:1.1 and 1:1.2, separately. For various experimental conditions, finite element simulation was used to model the deformation of bimetallic Al/Cu laminates. Specific attention was focused on the bonding strength and bonding quality of the interface between Al and Cu layers in the simulation and experiment. The optimization of mismatch rolling speed ratios was obtained for the improvement of the bond strength of bimetallic laminates during the asymmetric RB process. During the finite element simulation, the plastic strain of samples was found to reach the maximum value with a high quality bond for the samples produced with mismatch rolling speed 1:1.2. Moreover, the peeling surfaces of samples around the interface of laminates after the peeling test were studied to investigate the bonding quality by scanning electron microscopy.

• Transactions of Materials Processing
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• v.6 no.2
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• pp.136-144
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• 1997

(Ag-10%Ni)/Cu clad metals for electric contact switch were fabricated by cold-roll bonding process. 2 or 3 passes of cold-rolling was carried out for each process to investigate the effect of the rolling passes on the bonding property. The effect of the annealing temperature of copper before the cold-roll bonding on the bond strength was also studied. The specimen bonded with copper annealed below 30$0^{\circ}C$ before roll bonding showed good bond strength. This is because high stored energy in copper promoted the short range diffusion and the grain refinement of copper by the static recrystallization increased the degree of the interfacial coherency. The maximum peel strength of clad metals bonded with Cu annealed below 30$0^{\circ}C$ was 120N.

• Journal of the Microelectronics and Packaging Society
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• v.28 no.2
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• pp.29-37
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• 2021

The effect of Ar/N₂ two-step plasma treatment on the quantitative interfacial adhesion energy of low temperature Cu-Cu bonding interface were systematically investigated. X-ray photoelectron spectroscopy analysis showed that Ar/N₂ 2-step plasma treatment has less copper oxide due to the formation of an effective Cu4N passivation layer. Quantitative measurements of interfacial adhesion energy of Cu-Cu bonding interface with Ar/N₂ 2-step plasma treatment were performed using a double cantilever beam (DCB) and 4-point bending (4-PB) test, where the measured values were 1.63±0.24 J/m² and 2.33±0.67 J/m², respectively. This can be explained by the increased interfacial adhesion energy according phase angle due to the effect of the higher interface roughness of 4-PB test than that of DCB test.

• Journal of Korea Foundry Society
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• v.13 no.1
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• pp.42-49
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• 1993

Conventional manufacturing process for cast iron-babbitt metal composite is complicate and bimetallic bonding by centrifugal casting is also difficult because their melting point is largely different and nonmetallic inclusion exists on outer shell. This study is aiming to simplify multistage process by adding Cu-powder as insert metals during cast iron solidification. The variables on fabrication of composite pipe are mold rotating speed and inner surface temperature of outer metal. The optimum temperature range for fusion bonding between cast iron and Cu-layer was $1100^{\circ}C-1140^{\circ}C$ in case of mold rotating speed was 700rpm. When the inner surface of Cu-layer was at $900^{\circ}C$, the value of interfacial hardness between Cu-layer and babbitt metal were higher than Cu-matrix by forming diffusion layer, interfacial products between Cu-layer and babbitt metal are proved to be $Cu_6Sn_5({\eta})$by XRD.

• Journal of the Korean Ceramic Society
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• v.38 no.11
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• pp.1000-1007
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• 2001

In an evacuated tube solar collector, the stable sealing of the heat pipe to the glass tube is important for the collector to use for a long period of time. The sealing of copper tube to the glass is quite difficult because of the large differences in the physical and chemical properties of the two materials. In this study, therefore, a proper copper oxide layer was induced to improve the chemical bonding of the two materials, and the oxidation state of copper and the interface between copper and glass were examined by XRD, SEM and EDS. Its bonding strength was also measured. Cu$_2$O was formed when the bare copper was heat-treated under 600$^{\circ}C$, while CuO oxide layer was formed above that temperature. The bonding state of CuO to the copper was very poor. The borate treatment of the copper, however, extend the stable forming of Cu$_2$O layer to 800$^{\circ}C$. Borosilicate glass tube was sealed to a copper tube by Housekeeper method only when the sealing part was covered with Cu$_2$O layer. The bonding strength at the interface was measured 354.4N, its thermal shock resistance was acceptable.

• Journal of Welding and Joining
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• v.8 no.3
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• pp.31-38
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• 1990

The bonding mechanism and bond strength were investigated for the cold pressure welding of Al to Al, Cu to Cu and Al to Cu by upsetting. A phenomenon of bonding betweenthe metallic components has been observed by a scanning electron microscope and metallurgical microscope. A modified equation for bond strength with respect to the reduction of height shows reasonably a good agreement with the experimental data. When the values of the hardening factor and threshold deformation for the given materials could be determined, the theoretical bond strength can be calculated.