• KIEE International Transactions on Electrophysics and Applications
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• 제4C권2호
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• pp.64-67
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• 2004

In this paper, to discover the brightness improvement of ZnS:Cu powder electroluminescence (EL), a new structure is proposed in which phosphor and dielectric are mixed between electrodes. Dielectric and phosphor material are BaTiO$_3$ and ZnS:Cu, respectively. The effect of the mixed layer on EL sample is considered the improvement of source efficiency. Although the number of electrons introduced into the phosphor increases only modestly, the high electric field region of phosphor grains increases comparatively in the characteristics of brightness-voltage. Furthermore, the relaxation occurs through leading and trailing edge pairs, which is relatively efficient in characteristics of decay time. With these results, we found that the brightness of newly proposed ZnS:Cu powder electroluminescence was 167.24 cd/$m^2$ at ac voltage of 100V and frequency of 400Hz.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2007년도 춘계학술대회
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• pp.61-64
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• 2007

Ni/YSZ ($Y_{2}O_{3}-stabilized$ $ZrO_{2}$), Cu/YSZ and CuO/YSZ composite powder for a cathode material in high temperature electrolysis (HTE) was synthesized by a mechanical alloying method with Ni (or Cu, CuO, Co) and YSZ powder. Microstructure of the composite for HTE reaction has been analyzed with various techniques of XRD, SEM to investigate effects of fabrication conditions. And conductivity of electrode was measured, Cu/YSZ cermet showed the higher electrical conductivity value than Ni/YSZ.

• 한국진공학회지
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• 제3권1호
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• pp.59-64
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• 1994

극소전자 디바이스의 고집적화와 더불어 박막배선의 선폭은 0.5$\mu$m이하까지 축소되며 초고집적 submicron 박막금속화가 진행되고 있다. 미세회로에 적용되어지는 배선재료는 인가되는 고전류밀도로 인하여 electromigration 에 의한 결함이 쉽게 발생한다는 단점이있다. 금속박막 전도체위의 dielectric overlayer는 electromigration 에 대한 passivation 효과를 보여 극소전자 디바이스의 평균수명을 향상시 킨다.본 연구에서는 박막금속화에서 dielectric overlayer의 passivation 효과를 알아보기 위하여 약 3000 $\AA$ 두께의 Al,Al-1%Si, Ag 그리고 Cu 박막배선위에 증착하여 SiO2절연보호막의 유무에 따른 박막배선 의 수명변화 및 신뢰도를 측정하였다. 박막배선에 인가된 전류밀도는 1x106 A/cm2와 1x107 A/cm2 이었다. SiO2 dielectric overlayer는 Al,Al-1%Si Ag. Cu 박막배선에서는 electromigration에 대한 보호막 혀과를 보이며 평균수명을 모두 향상시킨다. SiO2 passivation 효과는 Al, Ag, Cu 박막중 Cu 박막배선에서 가 장 크게 나타났다. SiO2 dielectric overlayer가 형성되지 않은 경우 Al 박막배선의 수명이 가장 긴 것으 로 나타났으나 SiO2 가 형성된 경우는 Cu 박막배선의 수명이 가장 길게 나타났다.

• 마이크로전자및패키징학회지
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• 제28권2호
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• pp.59-64
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• 2021

차세대 반도체 기술은 이종소자 집적화(heterogeneous integration)를 이용한 시스템-인-패키징(system-inpackage, SIP) 기술로 발전하고 있고, 저온 Cu 본딩은 SIP 구조의 성능 향상과 미세 피치 배선을 위해서 매우 중요한 기술이라 하겠다. 본 연구에서는 porous한 Ag 나노막을 이용하여 Cu 표면의 산화 방지 효과와 저온 Cu 본딩의 가능성을 조사하였다. 100℃에서 200℃의 저온 영역에서 Ag가 Cu로 확산되는 것보다 Cu가 Ag로 확산되는 것이 빠르게 관찰되었고, 이는 저온에서 Ag를 이용한 Cu간의 고상 확산 본딩이 가능함을 나타내었다. 따라서 Ag 나노막을 이용한 Cu 본딩을 200℃에서 진행하였고, 본딩 계면의 전단 강도는 23.27 MPa로 측정되었다.

• 한국환경과학회지
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• 제25권11호
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• pp.1485-1491
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• 2016

PSf/D2EHPA/CNT beads were prepared by immobilizing di-(2-ethylhexyl)-phosphoric acid (D2EHPA) and carbon nanotubes (CNT) on polysulfone (PSf) and used to remove Cu(II) from aqueous solutions. Optimum pH was in the range of 4 to 6. The removal kinetic of Cu(II) by the prepared PSf/D2EHPA/CNT beads was mainly governed by internal diffusion, and the diffusion coefficient of Cu(II) by PSf/D2EHPA/CNT beads was found to be $2.19{\times}10^{-4}{\sim}2.64{\times}10^{-4}cm^2/s$. The Langmuir isotherm model predicted the experimented data well. The maximum removal capacity of Cu(II) obtained from this isotherm was 7.32 mg/g. Calculated thermodynamic parameters such as ${\Delta}G^o$, ${\Delta}H^o$ and ${\Delta}S^o$ showed that the adsorption of Cu(II) ions onto PSf/D2EHPA/CNT beads was feasible, spontaneous and endothermic at 293-323 K.

• Journal of Welding and Joining
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• 제13권3호
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• pp.55-64
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• 1995

Metallizing method on ceramic surface is one of the compositing technology of ceramics and metal. The purpose of this study is to make HIC (Hybrid Intergrated Circuit) with copper metallizing method of which copper layer is formed on ceramic substrate by firing in atmosphere in lieu of conventional hybrid microcircuit systems based on noble metal. Metallizing pastes were made from various copper compounds such as Cu$_{2}$O, CuO, Cu, CuS and kaolin. And the screen printing method was used. The characteristics of metallized copper layers were analyzed through the measurement of sheet resistance, SEM, and EDZX. The results obtainted are summarized as follows; 1. The copper metallizing layers on ceramic surface can be formed by firing in air. 2. The metallized layer using Cu$_{2}$O paste showed the smallest sheet resistance among a group of copper chemical compounds. And optimum metallizing conditions are 15 minutes of firing time, 1000.deg.C of firig temperature, and 3 minutes of deoxidation time. 3. The results of EDAX analysis showed mutual diffusion of Cu and Al. 4. The kaolin plays a important role of deepening the penetration of Cu to $Al_{2}$O$_{3}$ ceramics. But if the kaolin content is too much, sheet resistance increases and copper metallizing layer becomes brittle.

• 공업화학
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• 제33권6호
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• pp.666-674
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• 2022

The removal efficiencies of nutrients (N and P) and heavy metals (Cu and Ni) by Rhodobacter blasticus and R. blasticus attached to polysulfone carriers, alginate carriers, PVA carriers, and PVA + zeolite carriers in synthetic wastewater were compared. In the comparison of the nutrient removal efficiency based on varying concentrations (100, 200, 500, and 1000 mg/L), R. blasticus + polysulfone carrier treatment showed removal efficiencies of 98.9~99.84% for N and 96.92~99.21% for P. The R. blasticus + alginate carrier treatment showed removal efficiencies of 88.04~97.1% for N and 90.33~97.13% for P. The R. blasticus + PVA carrier treatment showed removal efficiencies of 18.53~44.25% for N and 14.93~43.63% for P. The R. blasticus + PVA + zeolite carrier treatment showed removal efficiencies of 26.65~64.33% for N and 23.44~64.05% for P. In addition, at the minimum inhibitory concentration of heavy metals, R. blasticus (dead cells) + polysulfone carrier treatment showed removal efficiencies of 7.77% for Cu and 12.19% for Ni. Rhodobacter blasticus (dead cells) + alginate carrier treatment showed removal efficiencies of 25.83% for Cu and 31.12% for Ni.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.64-64
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• 2009

As the advanced packaging technology developing, Copper electro-plating processing has be wildly utilized in the semiconductor interconnect technique. Chemical solution monitoring methods, including PH and gravity measurement exist in industry, but economical and practical real-time monitoring has not been achieved yet. Red-green-blue (RGB) color sensor can successfully monitor the condition of $CuSO_4$ solution during electric copper plating process. Comparing the intensity variations of the RGB data and optical spectroscopy data, strong correlation between two in-situ sensors have shown.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2007년도 High Temperature Superconductivity Vol.XVII
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• pp.64-64
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• 2007

• 대한방사성의약품학회지
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• 제5권1호
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• pp.61-68
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• 2019

Purine type compounds has been recently reported to cause the death for lung cancer cell, related to microtubules-targeting agents (MTAs). Therefore it can be used to develop as theranostic radiopharmceuticals in nuclear medicine or gadolinium-based MRI imaging agents by chelate chemistry. In the study, we tried to chemically bind a DOTA chelate on the end of purine compound and obtained a specific conjugate of DOTA-purine for metal coordination. In particular, radiometal like Cu-64, for the development of MRI imaging agents, can be utilized to choice good candidates before the synthesis of gadolinium complexes. By the screening of radioisotope technique, Gd-DOTA-purine type complex was successfully prepared and showed MRI imaging for lung cancer cell into the mouse model.