• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.11
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• pp.501-507
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• 2003

In this study, microscale, high-performance, solenoid-type RF chip inductors were investigated. The size of the RF chip inductors fabricated in this work was 1.0${\times}$0.5${\times}$0.5㎣. 96% $Al_2$ $O_3$and I-type were used as the material and shape of the core, respectively. The copper (Cu) wire with 6 turns was employed as the coils. The diameter (40${\mu}{\textrm}{m}$) and position (middle) of the coil and the length (0.35mm) of solenoid were determined by a high-frequency structure simulator (HFSS) to maximize the performance of the inductors. High frequency characteristics of the inductance (L) and quality-factor (Q) of developed inductors were measured using an RF Impedance/Material Analyzer (HP4291B with HP16193A test fixture). The inductors developed have inductances of 10.8nH and quality factors of 25.2 to 50 over the frequency ranges of 250MHz to l GHz, and show results comparable to those measured for the inductors prepared by CoilCraf $t^{Tm}$ . The simulated data predicted the high-frequency data of the L and Q of the inductors developed well.l.

• Journal of the Korean Magnetics Society
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• v.23 no.3
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• pp.94-97
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• 2013

Orthogonal fluxgate sensor was fabricated with cylinder-shaped NiZn ferrite core, Cu wire through the core and pickup coil wound on the core, and the bias current effect on the output sensitivity of it was investigated. The output ($$\sim_\sim$$ sensitivity) of the sensor was largely dependent on the operation frequency, and the tendency of sensor output was similar to that of the impedance of pickup coil. The maximum output was obtained by adding the DC bias current of which value was over 50% of the excitation current. The output was saturated when the DC bias current was larger than 50% of the excitation current.

• Proceedings of the KIEE Conference
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• 1998.07e
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• pp.1687-1689
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• 1998

In this work, the behaviours of conducting wire type particles within the coaxial electrode gap energized with high ac voltage have been systematically investigated using charge simulation method. For this, spheroidal charge is adopted as a image charge for the CSM analysis in order to calculate the acquired charge of the particles which are erected on the surface of the outer electrode. For this purpose, the effects of the lengths and diameters of Cu, Al particles in gas insulated system have been studied by a numerical computation and particle lifting voltage, lifting field, breakdown voltage, acquired charge and travelling distance have been considered. From this, we understand that the particle behaviours have different characteristics according to the particle lengths and diameters. And a possible countermeasure, based on the proposed simulation, has been provided with a view to estimating the flashover voltage of $SF_6$ gas under the 1 atm.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.10
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• pp.840-846
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• 2000

In this work, small-size, high-performance solenoid-type RF chip inductors utilizing a low-loss Al$_2$O$_3$core material were investigated. The size of the chip inductors fabricated in this work were 15$\times$10$\times$0.7㎣, 2.1$\times$1.5$\times$10㎣, and 2.4$\times$2.0$\times$1.4㎣ and copper (Cu) wire with 40 ㎛ diameter was used as the coils. High frequency characteristics of the inductance, quality factor, and impedance of developed inductors were measured suing an RF Impedance/Material Analyzer (HP4291B with HP16193A test fixture). It was observed that the developed inductors with the number of turns of 7 have the inductance of 33 to 100nH and exhibit the self-resonant frequency (SRF) of .26 to 1.1 GHz. The SRF of inductors decreases with increasing the inductance and the inductors have the quality factor of 60 to 80 in the frequency range of 300 MHz to 1.1 GHz. In this study, small-size solenoid-type RF chip inductors with high inductance and high quality factor were fabricated successfully. It is suggested that the thin film-type inductor is necessary to fabricate the smaller size inductors at the expence of inductance and quality factor values.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.474-475
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• 2007

Wire electrical explosion(WEE) has been used for the production of fine metal particles. In WEE, electrical powder was stored and compressed into capacitor and released to produce fine particles through evaporation and condensation. In this study, the effect of applied voltage on the size of copper powders was investigated. High tension was added up to the explosion device by dividing 4 steps. At voltages lower than 5.2 kV, the fraction of powders finer than $44{\mu}m$ was almost negligible. The effectiveness of explosion increased sharply with increased voltage over 5.8 kV. At the highest voltage of 6.4 kV, more than 80% of explosion products were finer than $44{\mu}m$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.262-263
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• 2005

For mechanical and electrical stability and environment protection, Cu and stainless steel stabilizer is laminated to Ag layer to produce a composite neutral-axis(N-A) architecture in which the YBCO layer is centered between the oxide buffered metallic substrate and stabilizer strip lamination. this architecture allows the wire to meet operational requirements including stresses at cryogenic temperature, winding tensions, mechanical bending requirements thermal and electrical stability under fault conditions. we have experimentally studied mechanical properties of laminated stainless steel stabilizer on YBCO coated conductors. we have laminated YBCO coated conductors by continuous dipping soldering process. we have investigated lamination interface between solder and stabilizer, YBCO coated conductor. we evaluated bonding properties tensile / shear bonding strength, peeling strength laminated YBCO coated conductors.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.1
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• pp.1-6
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• 2014

Flip chip bonded LED packages possess lower thermal resistance than wire bonded LED packages because of short thermal path. In this study, thermal and bonding properties of flip chip bonded high brightness LED were evaluated for Au-Sn thermo-compression bonded LEDs and Sn-Ag-Cu reflow bonded LEDs. For the Au-Sn thermo-compression bonding, bonding pressure and bonding temperature were 50 N and 300oC, respectively. For the SAC solder reflow bonding, peak temperature was $255^{\circ}C$ for 30 sec. The shear strength of the Au-Sn thermo-compression joint was $3508.5gf/mm^2$ and that of the SAC reflow joint was 5798.5 gf/mm. After the shear test, the fracture occurred at the isolation layer in the LED chip for both Au-Sn and SAC joints. Thermal resistance of Au-Sn sample was lower than that of SAC bonded sample due to the void formation in the SAC solder.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.431-432
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• 2012

In the era of 20 nm scaled semiconductor volume manufacturing, Microelectronics Manufacturing Engineering Education is presented in this paper. The purpose of microelectronic engineering education is to educate engineers to work in the semiconductor industry; it is therefore should be considered even before than technology development. Three Microelectronics Manufacturing Engineering related courses are introduced, and how undergraduate students acquired hands-on experience on Microelectronics fabrication and manufacturing. Conventionally employed wire bonding was recognized as not only an additional parasitic source in high-frequency mobile applications due to the increased inductance caused from the wiring loop, but also a huddle for minimizing IC packaging footprint. To alleviate the concerns, chip bumping technologies such as flip chip bumping and pillar bumping have been suggested as promising chip assembly methods to provide high-density interconnects and lower signal propagation delay [1,2]. Aluminum as metal interconnecting material over the decades in integrated circuits (ICs) manufacturing has been rapidly replaced with copper in majority IC products. A single copper metal layer with various test patterns of lines and vias and $400{\mu}m$ by $400{\mu}m$ interconnected pads are formed. Mask M1 allows metal interconnection patterns on 4" wafers with AZ1512 positive tone photoresist, and Cu/TiN/Ti layers are wet etched in two steps. We employed WPR, a thick patternable negative photoresist, manufactured by JSR Corp., which is specifically developed as dielectric material for multi- chip packaging (MCP) and package-on-package (PoP). Spin-coating at 1,000 rpm, i-line UV exposure, and 1 hour curing at $110^{\circ}C$ allows about $25{\mu}m$ thick passivation layer before performing wafer level soldering. Conventional Si3N4 passivation between Cu and WPR layer using plasma CVD can be an optional. To practice the board level flip chip assembly, individual students draw their own fan-outs of 40 rectangle pads using Eagle CAD, a free PCB artwork EDA. Individuals then transfer the test circuitry on a blank CCFL board followed by Cu etching and solder mask processes. Negative dry film resist (DFR), Accimage$^{(R)}$, manufactured by Kolon Industries, Inc., was used for solder resist for ball grid array (BGA). We demonstrated how Microelectronics Manufacturing Engineering education has been performed by presenting brief intermediate by-product from undergraduate and graduate students. Microelectronics Manufacturing Engineering, once again, is to educating engineers to actively work in the area of semiconductor manufacturing. Through one semester senior level hands-on laboratory course, participating students will have clearer understanding on microelectronics manufacturing and realized the importance of manufacturing yield in practice.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.10
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• pp.788-792
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• 2010

The yttrium-barium-copper-oxide (YBCO) coated conductor, which supplement the fault of the existing superconducting current-limit materials YBCO thin film, bismuth-strontium-calcium-copper-oxide(BSCCO) wire and bulk, has been improved its mechanical weakness and has high index; hence, after quench YBCO coated conductor could limit the fault current effectively because of fast resistance occurrence speed. Furthermore, it has wide applicable area as an current limit material because it shows different resistance occurrence tendency by the thickness and kind of stabilization material sputtered on the superconducting layer. Therefore, many researchers are carrying out the study of application of YBCO coated conductor to superconducting fault current limiter (SFCL) for making high quality current limit element, based on resistance type. On the other hand, the study for other type except resistance type has been rarely conducted for the application of YBCO coated conductor to SFCL as an current limit element. Consequently, in this study, YBCO coated conductor with different stabilization layer Cu and Stainless steel, is applied to SFCL using iron core and coil, and examine the many index points as an current limit element, such as current limit characteristic, the tendency of resistance occurrence, response time, the temperature trend for stability.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.7
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• pp.339-343
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• 2006

In this study, the variations of the important characteristics of solenoid-type RF chip inductors utilizing a low-loss A1203 core material on inductor dimensions were investigated systematically. Four dimensions of the chip inductors fabricated in this work were $1.0\times0.5\times0.5mm^3,\;1.5\times1.0\times0.7mm^3,\;2.1\times1.5\times1.0mm^3,\;and\;2.4\times2.0\times1.4mm^3$ and copper (Cu) wire with $40{\mu}m$ diameter was used as the coils. High frequency characteristics of the inductance, quality factor, and impedance of developed inductors as a function of inductor dimensions were measured using an RF Impedance/Material Analyzer (HP4291B with HP16193A test fixture). It was observed that the developed inductors with the number of turns of 6 have the inductance (L) of 12 to 82 nH and exhibit the self-resonant frequency (SRE) of 3.6 to 1.2 GHz. The SRF of inductors decreases with increasing the inductor size while the L increases with the inductor size. The smallest inductors of $1.0\times0.5\times0.5mm^3$ exhibited the L of 12 nH, SRF of 3.6 GHz, and the quality factor of 67 near the frequency of 1.1 GHz. The calculated data predicted the high-frequency data of the L, and Q of the developed inductors well.