• Korean Journal of Materials Research
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• v.18 no.6
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• pp.294-297
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• 2008

In this paper, a novel non-vacuum technique is described for the fabrication of a $CuInSe_2$ (CIS) absorber layer for thin film solar cells using a low-cost precursor solution. A solution containing Cu- and Inrelated chemicals was coated onto a Mo/glass substrate using the Doctor blade method and the precursor layer was then selenized in an evaporation chamber. The precursor layer was found to be composed of CuCl crystals and amorphous In compound, which were completely converted to chalcopyrite CIS phase by the selenization process. Morphological, crystallographic and compositional analyses were performed at each step of the fabrication process by SEM, XRD and EDS, respectively.

• Korean Journal of Materials Research
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• v.23 no.1
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• pp.1-6
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• 2013

A simple thermal oxidation of Cu thin films deposited on planar substrates established a growth of vertically aligned copper oxide (CuO) nanorods. DC sputter-deposited Cu thin films with various thicknesses were oxidized in environments of various oxygen partial pressures to control the kinetics of oxidation. This is a method to synthesize vertically aligned CuO nanorods in a relatively shorter time and at a lower cost than those of other methods such as the popular hydrothermal synthesis. Also, this is a method that does not require a catalyst to synthesize CuO nanorods. The grown CuO nanorods had diameters of ~100 nm and lengths of $1{\sim}25{\mu}m$. We examined the morphology of the synthesized CuO nanorods as a function of the thickness of the Cu films, the gas environment, the oxidation time, the oxidation temperature, the oxygen gas flow rate, etc. The parameters all influence the kinetics of the oxidation, and consequently, the volume expansion in the films. Patterned growth was also carried out to confirm the hypothesis of the CuO nanorod protrusion and growth mechanism. It was found that the compressive stress built up in the Cu film while oxygen molecules incorporated into the film drove CuO nanorods out of the film.

• Transactions on Electrical and Electronic Materials
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• v.8 no.4
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• pp.174-177
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• 2007

We fabricated organic field-effect transistors (OFETs) based a fluorinated copper phthalocyanine ($F_{16}CuPC$) and copper phthalocyanine (CuPc) as an active layer. And we observed the surface morphology of the $F_{16}CuPC$ thin film. The $F_{16}CuPC$ thin film thickness was 40 nm, and the channel length was $50{\mu}m$, channel width was 3 mm. And we also fabricated the $F_{16}CuPc/CuPc$ double layer FET and with different $F_{16}CuPc$ film thickness devices. We observed the typical current-voltage (I-V) characteristics and capacitance-voltage (C-V) in $F_{16}CuPc$ FET and we calculated the effective mobility. From the double layer FET devices, we observed the higher drain current more than single layer FET devices.

• Electrical & Electronic Materials
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• v.10 no.8
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• pp.813-818
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• 1997

In this study the thin film air core and magnetic core inductors consisting of planar coil and/or CoNbZr amorphous magnetic layers on a Si substrate were fabricated as spiral type by using rf magnetron sputtering and wet etching methods. The etchant solution was achieved by iron chloride solution(17.5 mol%) mixed with HF (20 mol%) during 150 sec which etched Cu films and CoNbZr/Cu/CoNbZr multi-layer films. They were about 10${\mu}{\textrm}{m}$ of thickness and 10$\times$10 mm$^2$of size. The properties of thin film magnetic core inductor were 400 nH of Q value at 10 MHz and the resonance frequency was about 300 MHz.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.2
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• pp.163-167
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• 2003

Ozone is strong and useful oxidizing gas for the fabrication of oxidation thin films. In order to obtain high quality thin film, the ozone concentration must be increased. An ozone condensation system is evaluated in the viewpoint of an ozone supplier for oxidation thin film growth. Ozone is condensed by the adsorption method and ozone concentration reaches 8.5 mol% by 2.5 h after the beginning of the ozone condensation is negligible if the condensed ozone is transferred between the ozone condensation system and the film growth chamber within a few minutes. CuO peak which is the result of the obtained Cu-films using condensed ozone appears by XRD patterns.

• Journal of the Korean institute of surface engineering
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• v.29 no.3
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• pp.157-162
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• 1996

The effects of microstructural change on the adhesion strength between Cu/Cr film and polyimide have been studied. Cr films (50 nm thick) and Cu films (500 or 1000 nm thick) were deposited on polyimide by DC magnetron sputtering. During Cu deposition the Ar pressure was 5 or 100 mtorr. The microstructure was observed by SEM and the adhesion was measured by T-peel test. Plastic deformation of peeled metal strips was characterized quantitatively by using XRD technique. The film in which Cu is deposited at 100 mtorr has higher adhesion strength than the film in which Cu is deposited at 5 mtorr. And in the film with same deposition pressure of 100 mtorr, the adhesion strength is increased as the deposited thickness increases from 500 to 1000 nm. The adhesion change of Cu/Cr can be interpreted as the difference in plastic deformation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.05a
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• pp.55-58
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• 1996

A new type CuN/Cu/CuN thin film electrode material with high adhesion to glass was developed by the dc reactive planar magnetron sputtering system for the PDP(Plasma Display Panel). The adhesive force of the CuxN thin film was in the range of 20∼40(N) under the conditions of the N$_2$ partial pressure of 15%, discharge current of 70mA, discharge voltage of 450v and substrate bias voltage of -100V. The adhesive force was depended on the N$_2$ partial Pressure, discharge current and substrate bias voltage.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.10 no.9
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• pp.1641-1647
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• 2006

A dual micro gas sensor way for detecting reducing gas and bad order was fabricated using nano sized $SnO_2$ thin film fabrication method. To make nano-sized thin gas sensitive $SnO_2$ thin rilm, thin tin metal layer $2500{\AA}$ thick was oxidized between 600 and $800^{\circ}C$ by thermal oxidation. The gas sensing layers such as $SnO_2,\;SnO_2(+Pt)\;and\;SnO_2(+CuO)$ were patterned by metal shadow mask for simple fabrication process on the silicon substrate. The micro gas sensors with $SnO_2(Pt)$ and $SnO_2(+CuO)$ showed good selectivity to CO gas among reducing gases and good sensitivity to $H_2S$ that is main component of bad odor, separately.

• Journal of the Korean Magnetics Society
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• v.5 no.2
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• pp.109-111
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• 1995

We suggest the phenominological model to determine the mangetoelastic coupling coefficient in Cu/Ni/Cu thin films by considering effective anisotropy energy with magnetic film thicknesses. This indirect determination can be applied other single crystalline systems.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.9-12
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• 1997

The fabrication and performance of a thin film pressure sensor are described. Cu-Ni thin film strain gauges have been fabricated by RF magnetron sputtering. For all the gauges, the relative chance in resistance ΔR/R with pressure is of the order 10$^{-3}$ for the maximum pressure. The output characteristic is found to be linear over the entire Pressure range (0-30kgf/cm$^2$) and the output sensitivity is 1.6 mV/V. The maximum nonlinearity observed in output characteristics is 0.34%FS for 5V excitation and the hysteresis is less than 0.1%FS.