• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.380.2-380.2
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• 2014

Direct synthesis of graphene using a chemical vapor deposition (CVD) has been considered a facile way to produce large-area and uniform graphene film, which is an accessible method from an application standpoint. Hence, their fundamental understanding is highly required. Unfortunately, the CVD growth mechanism of graphene on Cu remains elusive and controversial. Here, we present the effect of graphene growth parameters on the number of graphene layers were systematically studied and growth mechanism on copper substrate was proposed. Parameters that could affect the thickness of graphene growth include the pressure in the system, gas flow rate, growth pressure, growth temperature, and cooling rate. We hypothesis that the partial pressure of both the carbon sources and hydrogen gas in the growth process, which is set by the total pressure and the mole fraction of the feedstock, could be the factor that controls the thickness of the graphene. The graphene on Cu was grown by the diffusion and precipitation mode not by the surface adsorption mode, because similar results were observed in graphene/Ni system. The carbon-diffused Cu layer was also observed after graphene growth under high CH4 pressure. Our findings may facilitate both the large-area synthesis of well-controlled graphene features and wide range of applications of graphene.

• Corrosion Science and Technology
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• 제2권2호
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• pp.88-92
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• 2003

The technique for in situ simultaneous measurements of IR-RAS and QCM, which has been developed for investigation of corrosion in gaseous environments, was employed to study the effects of an extremely thin water layer on the corrosion rate. An evaporated copper film on a QCM element was exposed to air containing water vapor and $SO_2$, and time-resolved IR-RAS spectra were measured and mass gains were simultaneously followed with QCM. The tested ranges of relative humidity (RH) and concentration of $SO_2$ were 60% - 90% and 1 - 20 ppm, respectively. On the basis of 2D-IR analysis, the corrosion products were determined to be Chevreul's salt ($CuSO_3Cu_2SO_3{\cdot}2H_2O$) and $CuSO_4{\cdot}5H_2O$. By constructing curves of the relations between band intensities of IR spectra and mass gains of QCM for the corrosion products, the time variations in each product were determined from spectral experiments on copper plates. The thicknesses of physically adsorbed water layers in course of the corrosion process were also determined from water band intensities. The results showed that the thickness of the physically adsorbed water layer increased with increase in RH, and it also increased with increase in accumulation of corrosion products. The latter is probably due to the capillary effect of the corrosion products.

• 한국태양에너지학회:학술대회논문집
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• 한국태양에너지학회 2011년도 추계학술발표대회 논문집
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• pp.68-73
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• 2011

This study was performed numerical analysis in order to analyze liquid film flow of heat exchanger tube arrangement and configuration of evaporative multi effect distillation system using medium-temperature. Simulation was accomplished the two-dimensional calculations using commercial analyses program FLUENT based on the FVM(finite volume method). Fresh water generator of this study used Shell & Tubes heat exchanger with Cu_Ni tube, configuration of tube used bare tube and corrugated tube, and arrangement of tube used in-line array and staggered array. Performance of heat exchanger through the formation of liquid film was compared and analyzed. Liquid film flow occurred that falling on heat exchanger tube wall. Result of simulation showed that liquid film thickness of in-line arrangement was found 0.57mm with bare tube and 0.67mm with corrugated tube, respectively. And liquid film thickness of staggered arrangement was found 0.39mm with bare tubes and 0.62mm with corrugated tubes, respectively. Liquid film thickness of corrugated tube showed thicker than bare tube, but heat transfer rates of corrugated tube showed higher than bare tube. The reason was considered that surface area of corrugated tube was wider than bare tube. And liquid film thickness of staggered arrangement showed thinner than in-line arrangement, so thermal performance of staggered arrangement showed higher than in-line arrangement.

• Journal of Welding and Joining
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• 제30권2호
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• pp.65-69
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• 2012

Environmental and health concerns over the lead have led to investigation of the alternative Pb-free solders to replace commonly used Pb-Sn solders in microelectronic packaging application. The leading candidates for lead-free solder alloys are presently the near eutectic Sn-Ag-Cu alloys. Therefore, extensive studies on reliability related with the composition have been reported. However, the insufficient drop property of the near eutectic Sn-Ag-Cu alloys has demanded solder compositions of low Ag content. In addition, the solder interconnections in automobile applications like a smart box require significantly improved vibration resistance. Therefore, this study investigated the effect of alloying elements (Ag, Bi, In) on the vibration fatigue strength. The vibration fatigue was conducted in 10~1000Hz frequency and 20Grms. The interface of the as-soldered cross section close to the Cu pad indicated the intermetallic compound ($Cu_6Sn_5$) regardless of solder composition. The type and thickness of IMC was not significantly changed after the vibration test. It indicates that no thermal activities occurred significantly during vibration. Furthermore, as a function of alloying composition, the vibration crack path was investigated with a focus on the IMCs. Vibration crack was initiated from the fillet surface of the heel for QFP parts and from the plating layer of chip parts. Regardless of the solder composition, the crack during a vibration test was propagated as same as that during a thermal fatigue test.

• 폴리머
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• 제30권3호
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• pp.253-258
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• 2006

4 종류의 n형 유기 반도체 물질 F16CuPC, NTCDA, PTCDA, PTCDI C-8을 사용하여 ITO/n형 활성물질/Al gate/n형 활성물질/Al으로 구성되는 세로형 유기 박막트랜지스터를 제작하였다. 캐리어 이동도의 차이를 갖는 유기 물질의 종류와 유기 박막층의 두께 조절에 따른 유기 박막트랜지스터의 전류전압(I-V) 특성 및 전류의 온오프비에 미치는 영향을 조사하였다. PTCDI C-8을 사용한 세로형 유기 박막트랜지스터에서 낮은 구동전압과 높은 스위칭 특성을 보였다. ITO/PEDOT-PSS/P3HT/F16CuPc/Al gate/F16CuPc/Al으로 구성되는 발광트랜지스터를 제작하였고, 20 V에서 최고 0.054의 양자 효율을 나타내었다.

• Current Photovoltaic Research
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• 제1권1호
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• pp.44-51
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• 2013

For preparing a device-quality $CuInSe_2$ (CISe) light-absorbing layer by single-bath electrodeposition for a superstrate-type CISe cell, morphological properties of the CISe layers were investigated by varying concentrations of sulfamic acid and potassium biphthalate, complexing/buffering agents. CISe films were grown on an $In_2Se_3$ film by applying a constant voltage of -0.5V versus Ag/AgCl for 90 min in a solution with precursors of $CuCl_2$, $InCl_3$, and $SeO_2$, and a KCl electrolyte. A dense and smooth layer of CISe could be obtained with a solution containing both sulfamic acid and potassium biphthalate in a narrow concentration range of combination. A CISe layer prepared on the $In_2Se_3$ film with proper concentrations of complexing/buffering agents exhibited thickness of $1.6{\sim}1.8{\mu}m$ with few undesirable secondary phases. On the other hand, when the bath solution did not contain either sulfamic acid or potassium biphthalate, a CISe film appeared to contain undesirable flake-shape $Cu_{2-x}Se$ phases or sparse pores in the upper part of film.

• 마이크로전자및패키징학회지
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• 제30권2호
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• pp.60-64
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• 2023

본 연구에서는 그래핀 기반 소자의 성능에 영향을 미치는 그래핀과 금속 사이의 전기적 접촉저항 특성을 비교 분석하였다. 화학기상증착법을 이용하여 고품질의 그래핀을 합성하였으며, 전극 물질로 Al, Cu, Ni 및 Ti를 동일한 두께로 그래핀 표면 위에 증착하였다. TLM (transfer length method) 방법을 통해 SiO₂/Si 기판에 전사된 그래핀과 금속의 접촉저항을 측정한 결과, Al, Cu, Ni, Ti의 평균 접촉저항은 각각 345 Ω, 553 Ω, 110 Ω, 174 Ω으로 측정되었다. 그래핀과 물리적 흡착 특성을 갖는 Al와 Cu에 비해 화학적 결합을 형성하는 Ni과 Ti의 경우, 상대적으로 더 낮은 접촉저항을 갖는 것을 확인하였다. 본 연구의 그래핀과 금속의 전기적 특성에 대한 연구 결과는 전극과의 낮은 접촉저항 형성을 통해 고성능 그래핀 기반 전자, 광전자소자 및 센서 등의 구현에 기여할 수 있을 것으로 기대한다.

• 한국주조공학회지
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• 제22권3호
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• pp.109-113
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• 2002

A good fluidity of high strength Al-alloys is required to cast thin wall castings needed to reduce the weight of cast parts. The fluidity, measured as the length to which the metal flows in a standard channel, is affected by many factors, such as the pouring temperature, solidification type of the alloy, the channel thickness, melt head, mold materials and temperature, coating etc. Therefore the experimentally measured fluidity scatters very much and makes it difficult to estimate the fluidity of a melt with a few measurements. The effect of Ti content and grain refinement on the fluidity of high strength aluminum alloy was investigated with a test casting with 8 thin flow channels to reduce the scattering of the fluidity results. The fluidity of Al-4.8%Cu-0.6%Mn Al-6.2%Zn-1.6%Mg-1.0%Cu and well-known commercial aluminum alloy, A356 was tested. Initial content of Ti was varied from 0 to 0.2wt% and Al-5Ti-B master alloy was added for grain refinement. The flow length varied linearly with superheat. By adding Ti and Al-5Ti-B, the fluidity increased. The grain size decreased by adding grain refiner at the same time. The fluidity depended on the degree of grain refinement. The fluidity of the alloy solidifying in mushy type is improved by grain refinement, because grain refinement increases the solid fraction at the time of flow stoppage.

• 마이크로전자및패키징학회지
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• 제24권1호
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• pp.45-50
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• 2017

본 연구에서는 Sn-0.7Cu-xZn 무연솔더와 OSP 표면처리 된 솔더접합부의 전단강도를 Zn 함유량에 따라 평가하였다. 다섯 종류의 Sn-0.7Cu-xZn (x=0, 0.5, 1.0, 1.5, 2.0 wt.%) 솔더페이스트를 제작한 뒤, OSP(organic solderability preservative) 표면처리 한 PCB(printed circuit board) 기판의 전극에 리플로우 공정으로 180 um 직경의 솔더볼을 형성하였다. 전단강도는 두 가지 조건의 전단속도(0.01, 0.1 m/s)로 고속전단시험(high speed shear test)을 통해 측정하였고, 고속전단시험 시에 측정된 F-x(Force-distance) curve를 통해 파괴에너지(fracture energy)를 계산하였다, SEM(주사전자현미경, scanning electron microscopy)과 EDS(energy dispersive spectroscopy) 분석을 통하여 단면과 파단면을 관찰하였고, 금속간 화합물(intermetallic compound, IMC) 층을 분석하였다. Zn 함유량이 증가함에 따라 금속간 화합물 층의 두께는 감소하였고, Zn 함유량이 0.5 wt.%일 때 가장 높은 전단 강도(shear strength)를 나타내었다. 전체적으로 높은 전단속도 조건의 전단강도 값이 낮은 전단속도 조건의 전단강도보다 높았다.

• 한국정밀공학회지
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• 제31권10호
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• pp.865-871
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• 2014

Paradigm shift to 3-D chip stacking in electronic packaging has induced a lot of integration challenges due to the reduction in wafer thickness and pitch size. This study presents a hybrid bonding technology by self-alignment effect in order to improve the flip chip bonding accuracy with ultra-thin wafer. Optimization of Cu pillar bump formation and evaluation of various factors on self-alignment effect was performed. As a result, highly-improved bonding accuracy of thin wafer with a $50{\mu}m$ of thickness was achieved without solder bridging or bump misalignment by applying reflow process after thermo-compression bonding process. Reflow process caused the inherently-misaligned micro-bump to be aligned due to the interface tension between Si die and solder bump. Control of solder bump volume with respect to the chip dimension was the critical factor for self-alignment effect. This study indicated that bump design for 3D packaging could be tuned for the improvement of micro-bonding quality.