• Korean Journal of Metals and Materials
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• v.47 no.11
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• pp.728-733
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• 2009

Cu based amorphous ($Cu_{54}Zr_{22}Ti_{18}Ni_{6}$) powders were deposited onto Al 6061 substrates by cold spray process with different powder preheating temperatures (below glass transition temperature: $350^{\circ}C$, near glass transition temperature: $430^{\circ}C$ and near crystallization temperature: $500^{\circ}C$). The microstructure and macroscopic properties (hardness, wear and corrosion) of Cu based amorphous coating layers were also investigated. X-ray diffraction results showed that cold sprayed Cu based amorphous coating layers of $300{\sim}350{\mu}m$ thickness could be well manufactured regardless of powder preheating temperature. Porosity measurements revealed that the coating layers of $430^{\circ}C$ and $500^{\circ}C$ preheating temperature conditions had lower porosity contents (0.88%, 0.93%) than that of the $350^{\circ}C$ preheating condition (4.87%). Hardness was measured as 374.8 Hv ($350^{\circ}C$), 436.3 Hv ($430^{\circ}C$) and 455.4 Hv ($500^{\circ}C$) for the Cu based amorphous coating layers, respectively. The results of the suga test for the wear resistance property also corresponded well to the hardness results. The critical anodic current density ($i_{c}$) according to powder preheating temperature conditions of $430^{\circ}C$, $500^{\circ}C$ was lower than that of the sample preheated at $350^{\circ}C$, respectively. The higher hardness, wear and corrosion resistances of the preheating conditions of near $T_{g}$ and $T_{x}$, compared to the properties of below $T_{g}$, could be well explained by the lower porosity of coating layer.

• Korean Journal of Materials Research
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• v.33 no.11
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• pp.491-496
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• 2023

As the demand for p-type semiconductors increases, much effort is being put into developing new p-type materials. This demand has led to the development of novel new p-type semiconductors that go beyond existing p-type semiconductors. Copper iodide (CuI) has recently received much attention due to its wide band gap, excellent optical and electrical properties, and low temperature synthesis. However, there are limits to its use as a semiconductor material for thin film transistor devices due to the uncontrolled generation of copper vacancies and excessive hole doping. In this work, p-type CuI semiconductors were fabricated using the chemical vapor deposition (CVD) process for thin-film transistor (TFT) applications. The vacuum process has advantages over conventional solution processes, including conformal coating, large area uniformity, easy thickness control and so on. CuI thin films were fabricated at various deposition temperatures from 150 to 250 ℃ The surface roughness root mean square (RMS) value, which is related to carrier transport, decreases with increasing deposition temperature. Hall effect measurements showed that all fabricated CuI films had p-type behavior and that the Hall mobility decreased with increasing deposition temperature. The CuI TFTs showed no clear on/off because of the high concentration of carriers. By adopting a Zn capping layer, carrier concentrations decreased, leading to clear on and off behavior. Finally, stability tests of the PBS and NBS showed a threshold voltage shift within ±1 V.

• Korean Journal of Materials Research
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• v.6 no.7
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• pp.723-732
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• 1996

Cu films were deposited by chemical wapor deposition on the as-received substrates (TiN/Si) and three kinds of Cu-seeded substrates (Cu/TiN/Si) which had seeding layer in the thick ness of 5 ${\AA}$ and 130 ${\AA}$ coated by ICB(Ionized Cluster Beam) method. The effect of Cu seeding layers on the growth rate, crystallinity, grain size uniformity and film adhesion strength of final CVD-Cu films was investigated by scanning eletron microscopy(SEM), X-ray diffractometry and scratch test. The growth rate was found to incresase somewhat in the case of ICB-seeding. The XRD patterns of the Cu films on the as-received substrate and ICB Cu-seeded substrates exhibited the diffraction peaks corresponding to FCC phase, but the peak intensity ratio($I_{111}/I_{200}$) of Cu films deposited on the ICB Cu-seeded substrates increased compared with that of Cu films on the as-received substrate. The resistivity of final Cu film on 40 ${\AA}$ seeded substrate was observed as the lowest value, 2.42 $\mu\Omega\cdot$cm compared with other Cu films. In adhesion test, as the seeding thickness increased from zero to 130 ${\AA}$, the adhesion strength increased from 21N to 27N.

• Korean Journal of Materials Research
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• v.29 no.11
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• pp.709-714
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• 2019

In order to observe the microstructure and morphology of porous titanium -oxide thin film, deposition is performed under a higher Ar gas pressure than is used in the general titanium thin film production method. Black titanium thin film is deposited on stainless steel wire and Cu thin plate at a pressure of about 12 Pa, but lustrous thin film is deposited at lower pressure. The black titanium thin film has a larger apparent thickness than that of the glossy thin film. As a result of scanning electron microscope observation, it is seen that the black thin film has an extremely porous structure and consists of a separated column with periodic step differences on the sides. In this configuration, due to the shadowing effect, the nuclei formed on the substrate periodically grow to form a step. The surface area of the black thin film on the Cu thin plate changes with the bias potential. It has been found that the bias of the small negative is effective in increasing the surface area of the black titanium thin film. These results suggest that porous titanium-oxide thin film can be fabricated by applying the appropriate oxidation process to black titanium thin film composed of separated columns.

• 한국초전도학회:학술대회논문집
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• v.16
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• pp.81-81
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• 2006

• Proceedings of the KIEE Conference
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• 2003.10a
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• pp.134-136
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• 2003

In this work, we have seen the effect of hole-transporting layer in organic light-emitting diodes using N,N'-biphenyl-N,N'-bis-(3-methylphenyl)-[1,1'-biphenyl]-4,4'-diamine(TPD) and N,N'-biphenyl-N,N'-bis-(1-naphenyl)-[l,l'-biphenyl]-4,4'-diamine(NPB). NPB is regarded as a better hole trans porting material than TPD, since it has a higher glass transition temperature($T_g$). And current-voltage, luminance-voltage and external quantum efficiency of device were measured with the thickness variation of buffer layer using copper phathalocyanine(CuPc) am polytetrafluoroethylene (PTEE) at room temperature. We have obtained an improvement of External quantum efficiency when the CuPc 30[nm] and PTFE 1.0[nm] is used.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1390-1392
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• 2001

ZnO-based SAW(surface acoustic wave) filters are fabricated with the configuration of IDT/ZnO/$SiO_2$/Si(100) using various IDT materials such as Al, Cu/Ti, and Cu/Al. Their frequency response characteristics are measured and compared. The thickness of Al IDT is varied to examine the mass loading effect. In addition, effects of thermal treatment and electrical stress on the frequency responses of the fabricated SAW filters are investigated.

• 한국컴퓨터산업교육학회:학술대회논문집
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• 2003.11a
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• pp.49-54
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• 2003

In this work, we have seen the effect of hole-transporting layer in organic light-emitting diodes using N,N'-biphenyl-N,N'-bis-(3-methylphenyl)-[1,1'-biphenyl]-4,4'-diamine(TPD) and N,N'-biphenyl-N,N'-bis-(1-naphenyl)-[1,1'-biphenyl]-4,4'-diamine(NPB). NPB is regarded as a better hole trans porting material than TPD, since it has a higher glass transition temperature$(T_g)$. And current -voltage, luminance-voltage and external quantum efficiency of device were measured with the thickness variation of buffer layer using copper phathalocyanine(CuPc) and polytetrafluoroethylene (PTFE) at room temperature. We have obtained an improvement of External quantum efficiency when the CuPc 30[nm] and PTFE 1.0[nm] is used.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.459-462
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• 2001

Interface effects on properties of NTC thermistors having Mn-Co-O spinel crystal structure system are analyzed by a mixing rule in case of mixed types and layered types between CuO and Al$_2$O$_3$ added compounds. With adding CuO and Al$_2$O$_3$, The compounds form completely solid solution and their resistance and B constant are changed due to the variation of conduction electrons by their ionic substitutions. The properties of mixed NTC thermistors are depended on the logarithmic mixing rule by a dispersed phase and they show slightly lower values due to the lattice mixing affect in compared with calculated values. The resistance of layered NTC thermistors is depended upon the series mixing rule containing the value of an interface layer and effected by the variation of its thickness, and it is changed rapidly to the logarithmic mixing rule by the connection between two layers with increasing the interface layer

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.229-229
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• 2003

Enhancement of the exchange bias and optimization of the structure have been the focus that many researchers studied, recently [1]. In this report, magnetic properties of MTJs with structure of Si/Ta (5)/Cu (10)/ Ta (5)/ Ni$\sub$80/Fe$\sub$20/ Cu (5)/ Mn$\sub$75Ir$\sub$25/ (10)/ Co$\sub$70/Fe$\sub$30/ (2.5)/ Al-O (1.5)/ Co$\sub$70/Fe$\sub$30/ (2.5)/ Ni$\sub$80/Fe$\sub$20/ (t)/ Ta (5) (t=0,10, 30, 60 and 100 nm, respectively) were investigated. The relationship between the structure and magnetic parameters of interfacial exchange coupling and interlayer coupling in as-deposited and annealed junctions was studied. The temperature dependence of exchange coupling was considered.