• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.123-124
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• 2005

We investigated the effect of a Ta/TaN Cu diffusion barrier existence on the reliability and the electrical performance of Cu dual-damascene interconnects. A high EM performance in Cu dual-damascene structure was observed the BCV(barrier contact via) interconnect structure to remain Ta/TaN barrier layer. Via resistance was decreased DCV interconnect structure by bottomless process. This structure considers that DCV interconnect structure has lower activation energy and higher current density than BCV interconnect structure. The EM failures by BCV via structure were formed at via hole, but DCV via structure was formed EM fail at the D2 line. In order to improve the EM characteristic of DCV interconnect structure by bottomless process, after Ta/TaN diffusion barrier layer in via bottom is removed by Ar+ resputtering process, it is desirable that Ta thickness is thickly made by Ta flash process.

• 한국응용과학기술학회지
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• 제16권4호
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• pp.307-311
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• 1999

Interfacial properties of electrode and organic thin layer is one of the most important factor in performing a Light Emitting Diodes(LED). Phthalocyanine copper was used as a buffer layer to improve interface characteristic, so that device efficiency was improved. In this study, LEDs were fabricated as like structures of Indium-Tin-Oxide (ITO) / N,N' -Diphenyl-N,N'-di(m-tolyl)-benzidine (TPD) / 8-Hydroxyquinoline aluminum(Alq) / Aluminum(Al) and Indium-Tin-Oxide(ITO) / N,N'-Diphenyl-N,N' -di(m-tolyl)-benzidine(TPD) / 2-(4-Biphenylyl)-5(4-tert-butyl-phenyl)-1,3,4-oxadiazole(PBD) / Aluminum(Al). In these devices, CuPC was layered at electrode/organic layer interface. As position is changing and thickness is changing, devices showed characteristic luminescence efficiency and luminescence inensity respectively. We showed in this study that luminescence efficiency was improved with CuPC layer in LEDs. The efficiency of device with layer CuPC is higher than that of 2 layer CuPC. However, the luminescence of 2 layer CuPC device got higher value.

• 한국콘텐츠학회논문지
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• 제20권6호
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• pp.425-432
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• 2020

본 연구는 상업용 Ortho MTA에 생체활성 유리 나노입자(bioactive glass nano particles)에 구리(Cu) 0.5, 1.0, 2.0, 4.0 wt%를 첨가하여 새로운 Cu-BGn MTA를 조성하고 세균부착실험을 통한 항균효과와 물성을 평가하였다. 경화시간과 압축강도는 ISO 6876(2012) 규격에 맞추어 직경 4 mm, 두께 6 mm 시편을 제작하여 산출하였으며, 항균효과는 S. mutans, E. faecalis 2개의 균주를 이용하여 평가하였다. 실험 결과 경화시간과 압축강도는 Cu-BGn 첨가와는 통계적으로 유의한 차이를 보이지 않았다(p>0.05). 항균실험 결과 대조군 Ortho MTA와 비교하여 Cu-BGn을 4.0 wt% 첨가한 S. mutans 실험군에서 낮은 부착 양상을 보였으며 통계적으로 유의한 차이가 나타났다(p<0.05). E. faecalis 실험군에서도 4.0 wt% 첨가한 군에서 통계적으로 유의한 차이를 보였다(p<0.05). 이는 Cu-BGn의 세균부착 억제 효과가 있음을 입증한 것이라 사료된다. 향후 구강환경을 재현시킬 수 있는 다양한 환경에서의 심도 있는 연구가 필요할 것으로 생각된다.

• 한국전기전자재료학회논문지
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• 제13권4호
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• pp.349-358
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• 2000

Fabrication and Characterization of Bi$_{2}$/Sr$_{2}$/CaCu$_{2}$/O$_{8}$(Bi2212) superconductor thick films were fabricated successfully on C tapes by liquid reaction between Cu-free precursors of Bi$_{x}$/SrCaO/$_{y}$(x=1.2-2) and Cu tapes. Cu-free Bi-Sr-Ca-O powder mixtures were screen-printed on Cu tapes and heat-treated at 850-87$0^{\circ}C$ for several minutes in air oxygen nitrogen and low oxygen pressure. In order to obtain the optimum heat-treatment condition we studied the effect of the precursor composition the printing thickness and the heat-treatment atmosphere on the superconducting properties of Bi2212 films and the reaction mechanism. Microstructures and phases of thick films were analyzed by films and the reaction mechanism. Microstructures and phases of thick films were analyzed by optical microscope and XRD. The electric properties of superonducting films were examined by the four probe method. At heat-treatment temperature the thick films were in a partially molten state by liquid reaction between CuO of the oxidized copper tape and the precursors which were printed on Cu tapes. During the heat-treatment procedure Bi2212 superconducting particle nucleate and grow in preferred orientations.ons.s.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.273-280
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• 2002

The stochiometric mix of evaporating materials for the CuGaTe$_2$ single crystal thin films was prepared from horizontal furnance. For extrapolation method of X-ray diffraction patterns for the CuGaTe$_2$ polycrystal, it was found tetragonal structure whose lattice constant a$\_$0/ and c$\_$0/ were 6.025 ${\AA}$ and 11.931 ${\AA}$, respectively. To obtain the single crystal thin films, CuGaTe$_2$ mixed crystal was deposited on throughly etched semi-insulator GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were 670 $^{\circ}C$ and 410 $^{\circ}C$ respective1y, and the thickness of the single crystal thin films is 2.1 $\mu\textrm{m}$. The crystalline structure of single crystalthin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). Hall effect on this sample was measured by the method of van der Pauw and studied on carrier density and mobility dependence on temperature. The carrier density and mobility of CuGaTe$_2$ single crystal thin films deduced from Hall data are 8.72${\times}$10$\^$23/㎥, 3.42${\times}$10$\^$-2/㎡/V$.$s at 293K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c - axis of the CuGaTe$_2$ single crystal thin film, we have found that the values of spin orbit coupling Δs.o and the crystal field splitting Δcr were 0.0791 eV and 0/2463eV at 10K, respectively. From the PL spectra at 10K, the peaks corresponding to free bound excitons and D-A pair and a broad emission band due to SA is identified. The binding energy of the free excitons are determined to be 0.0470eV and the dissipation energy of the donor -bound exciton and acceptor-bound exciton to be 0.0490eV, 0.00558eV, respectively.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.71-71
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• 2010

Copper oxide thin films were deposited on the p-type Si(100) by r.f. magnetron sputtering as a function of different substrate temperature. The deposited copper oxide thin films were investigated by atomic force microscopy (AFM), scanning electron microscopy (SEM), spectroscopic ellipsometry (SE), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS). The SEM and SE data show that the thickness of the copper oxide films was about 170 nm. AFM images show that the surface roughness of copper oxide films was increased with increasing substrate temperature. As the substrate temperature increased, monoclinic CuO (111) peak appeared and the crystal size decreased while the monoclinic CuO (-111) peak was independent on the substrate temperature. The oxidation states of Cu 2p and O 1s resulted from XPS were not affected on the substrate temperature. The contact angle measurement was also studied and indicated that the surface of copper oxide thin films deposited high temperature has more hydrophobic surface than that of deposited at low temperature.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2003년도 추계학술발표회초록집
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• pp.136-137
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• 2003

In this study, in order to fabricate sintered dental implant, the effects of HA, Ti and TiN on corrosion and biocompatibility, cell toxicity, osseointegration of electroless Cu-plated and sintered stainless steel implant were investigated using various characteristics. The effects of Ti/TiN/HA coating on the interface activation and surface characteristics of sintered stainless steels(SSS) by electron-beam physical vapor deposition(EB-PVD) method have been studied. Stainless steel compacts containing 2, 4, and 10 wt%Cu were prepared by electroless Cu-plating method which results in the increased homogenization in alloying powder. The specimens were coated with HA, Ti and TiN with few $\mu\textrm{m}$ thickness respectively by EB-PVD method. The microstructures and phase analysis were conducted by using SEM. Biocompatibility were investigated in experimental dog. The corrosion behaviors were investigated using potentiosat in 0.9% NaCl solution and corrosion surface was observed using SEM and XPS.

• 한국표면공학회지
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• 제32권3호
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• pp.372-376
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• 1999

The deposited Cu film on the ferrite magnet was more deposited comparing with that on the plastic magnet. The Cu film became thicker on the S pole comparing with that on the N pole in the both of magnets. The thickness and texture coefficient of deposited copper film affected with direction of line of magnetic force. The difference of pole had little or no effect to the texture coefficient of deposited nickel film. The reaction rate on ferrite magnet and S pole was faster comparing with that on plastic magnet and N pole.

• Advances in materials Research
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• 제8권1호
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• pp.1-10
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• 2019

Roll bonding (RB) process of bi-metal laminates as a new noble method of bonding has been widely used in the production of bimetal laminates. In the present study, asymmetric roll bonding process as a new noble method has been presented to produce Al/Cu bimetallic laminates with the thickness reduction ratios 10%, 20% and 30% together with mismatch rolling diameter ($\frac{R_2}{R_1}$) ratio 1:1, 1:1.1 and 1:1.2. ABAQUS as a finite element simulation software was used to model the deformation of samples. The main attention in this study focuses on the bonding properties of Al/Cu samples. The effect of the $\frac{R_2}{R_1}$ ratios was investigated to improve the bond strength. During the simulation, for samples produced with $\frac{R_2}{R_1}=1:1.2$, the vertical plastic strain of samples was reach the maximum value with a high quality bond. Moreover, the peeling surface of samples after the peeling test was investigated by the scanning electron microscopy (SEM).

• 대한금속재료학회지
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• 제50권12호
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• pp.939-948
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• 2012

A 3-ply clad metal consisting of aluminum and copper was fabricated by roll bonding process and the microstructures and mechanical properties of the roll-bonded and post-roll-bonding heat treated Cu/Al/Cu clad metal were investigated. A brittle interfacial reaction layer formed at the Cu/Al interfaces at and above $400^{\circ}C$. The thickness of the reaction layer increased from $12{\mu}m$ at $400^{\circ}C$ to $28{\mu}m$ at $500^{\circ}C$. The stress-strain curves demonstrated that the strength decreased and the ductility increased with heat treatment up to $400^{\circ}C$. The clad metal heat treated at $300^{\circ}C$ with no indication of a reaction layer exhibited an excellent combination of the strength and ductility and no delamination of layers up to final fracture in the tensile testing. Above $400^{\circ}C$, the ductility decreased rasxpidly with little change of strength, reflecting the brittle nature of the intermetallic interlayers. In Cu/Al/Cu clad heat treated above $400^{\circ}C$, periodic parallel cracks perpendicular to the stress axis were observed at the interfacial reaction layer. In-situ optical microscopic observation revealed that cracks were formed in the Cu layer due to the strain concentration in the vicinity of horizontal cracks in the intermetallic layer, promoting the premature fracture of Cu layer. Vertical cracks parallel to the stress axis were also formed at 15% strain at $500^{\circ}C$, leading to the delamination of the Cu and Al layers.