• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.11a
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• pp.103-104
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• 2007

$CuInO_2$ 단일상은 합성조건이 매우 까다롭기 때문에 일반적인 고상법으로 얻기 힘든 것으로 알려저 있다. 투명전도성 $CuInO_2$ 박막을 증착하기 위하여 일반적인 고상법으로 Cu와 In의 비율이 1:1인 $Cu_2O-In_2O_3$ composite target 및 In 대신 Ca, Mg, Ti가 각각 1mol% 도핑된 target을 제작하였다. 제작된 각각의 composite target을 이용하여 pulsed laser deposition(PLD) 공정으로 투명전도성 $CuInO_2$ 박막을 증착하였다. Cu와 In이 1:1 인 $Cu_2O-In_2O_3$ composite target을 사용한 경우, 증착된 박막이 Cu와 In의 비율이 1:1인 c-axis 배향된 단일상의 $CuInO_2$ 박막임을 확인하였다.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.05a
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• pp.73-74
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• 2015

본 연구에서는 상호간의 고용도가 없는 Mo, Cu 재료의 합금화가 용이하도록 기계적 합금화법(Mechanical Alloying)을 이용하여 Mo-Cu 합금분말을 제조하였고, 준안정상태의 구조의 유지가 가능한 방전 플라즈마 소결법(Spark Plasma Sintering)을 이용하여 합금타겟을 제작하였다. Mo-Cu 박막을 제작하기 위해서 합금타겟을 이용하였고 스퍼터링 공정을 진행하여 박막을 제작하였다. 그 결과 Mo-10wt%Cu 단일타겟을 이용하여 제작한 박막의 경우 Ar : N 분위기에서 27.7GPa 로 가장 높은 경도값을 가지는 것을 확인하였다. 또한 Mo-5wt%Cu 단일타겟을 이용하여 Ar : N 분위기에서 제작한 박막은 건식조건에서의 마찰계수값이 0.69 로 가장 낮은 것을 확인할 수 있었으며 윤활조건(GF4)에서는 Mo-10wt%Cu 단일타겟을 이용하여 Ar : N 분위기에서 제작한 박막이 0.56 으로 가장 낮았다.

• Journal of Powder Materials
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• v.18 no.6
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• pp.546-551
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• 2011

Ag spot-coated Cu nanopowders were synthesized by a hydrothermal-attachment method (HA) using oleic acid capped Ag hydrosol. Cu nano powders were synthesized by pulsed wire exploding method using 0.4 mm in diameter of Cu wire (purity 99.9%). Synthesized Cu nano powders are seen with comparatively spherical shape having range in 50 nm to 150 nm in diameter. The oleic acid capped Ag hydrosol was synthesized by the precipitation-redispersion method. Oleic acid capped Ag nano particles showed the narrow size distribution and their particle size were less than 20 nm in diameter. In the case of nano Ag-spot coated Cu powders, nanosized Ag particles were adhered in the copper surface by HAA method. The components of C, O and Ag were distributed on the surface of copper powder.

• Applied Science and Convergence Technology
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• v.23 no.6
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• pp.345-350
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• 2014

The surface oxidation mechanism of lead-free solder alloys has been investigated with multiple reflow using X-ray photoelectron spectroscopy. It was found that the solder surface of Sn-Ag-Cu-In solder alloy is surrounded by a thin $InO_x$ layer after reflow process; this coating protects the metallic surface from thermal oxidation. Based on this result, we have performed a wetting balance test at various temperatures. The Sn-Ag-Cu-In solder alloy shows characteristics of both thermal oxidation and wetting balance better than those of Sn-Ag-Cu solder alloy. Therefore, Sn-Ag-Cu-In solder alloy is a good candidate to solve the two problems of easy oxidation and low wettability, which are the most critical problems of Pb-free solders.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.121-121
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• 2018

Copper is a promising electronic material due to low cost and high electrical conductivity. However, the oxidation problem in an ambient condition makes a crucial issue in practical applications. In here, we developed a simple and cost-effective Cu patterning method on a flexible PET film by combining a solution processable Cu nanoparticle patterning and a low temperature post-processing using acetic acid treatment, laser sintering process and acid-assisted laser sintering process. Acid-assisted laser sintering processed Cu electrode showed superior characteristics in electrical, mechanical and chemical stability over other post-processing methods. Finally, the Cu electrode was applied to the flexible electronics applications such as flexible and transparent heaters and touch screen panels.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2011.05a
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• pp.184-185
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• 2011

In this study, in order to obtain a high reflectivity for the LED lead frame, tin dip coating and tin plating were conducted respectively, and wettability of LED lead frame with tin solder also was tested by wetting balance tester. A Cu sheet was plated in Cu brighten electroplating bath and followed by immersion in a Sn electro-less plating bath [1]. On the other hand, in the dip coating process, a Cu sheet was dipped into molten tin. In the progress of wetting test, besides wetting balance curve, the maximum measured force($F_m$), the maximum withdrawal force($F_w$) and zero-cross time($t_0$) were obtained in various temperatures. With the maximum withdrawal force, the surface tension was calculated at different temperatures. The Cu sheet plated with bright Cu and Sn show a silver bright property while that of Cu dipped with Sn possessed a high reflectance density of 1.34GAM at $270^{\circ}C$.

• Journal of Electrochemical Science and Technology
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• v.11 no.1
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• pp.92-98
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• 2020

SnO₂-based high-capacity anode materials are attractive candidate for the next-generation high-performance lithium-ion batteries since the theoretical capacity of SnO₂ can be ideally extended from 781 to 1494 mAh g^-1. Here 3D etched Cu foam is applied as a current collector for electron path and simultaneously a substrate for the SnO₂ coating, for developing an integrated electrode structure. We fabricate the 3D etched Cu foam through an auto-catalytic electroless plating method, and then coat the SnO₂ onto the self-supporting substrate through a simple sol-gel method. The catalytic dissolution of Cu metal makes secondary pores of both several micrometers and several tens of micrometers at the surface of Cu foam strut, besides main channel-like interconnected pores. Especially, the additional surface pores on etched Cu foam are intended for penetrating the individual strut of Cu foam, and thereby increasing the surface area for SnO₂ coating by using even the internal of Cu foam. The increased areal capacity with high structural integrity upon cycling is demonstrated in the SnO₂-coated 3D etched Cu foam. This study not only prepares the etched Cu foam using the spontaneous chemical reactions but also demonstrates the potential for electroless plating method about surface modification on various metal substrates.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.146.2-146.2
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• 2013

Copper is considered to be the most promising substrate for the growth of high-quality and large area graphene by chemical vapor deposition (CVD), in particular, on the (111) facet. Because the interactions between graphene and Cu substrates influence the orientation, quality, and properties of the synthesized graphene, we studied the interactions using angle-resolved photoemission spectroscopy. The evolution of both the Shockley surface state of the Cu(111) and the ${\pi}$ band of the graphene was measured from the initial stage of CVD growth to the formation of a monolayer. Graphene growth was initiated along the Cu(111) lattice, where the Dirac band crossed the Fermi energy (EF) at the K point without hybridization with the d-band of Cu. Then two rotated domains were additionally grown as the area covered with graphene became wider. The Dirac energy was about -0.4 eV and the energy of the Shockley surface state of Cu(111) shifted toward the EF by ~0.15 eV upon graphene formation. These results indicate weak interactions between graphene and Cu, and the electron transfer is limited to that between the Shockley surface state of Cu(111) and the ${\pi}$ band of graphene. This weak interaction and slight lattice mismatch between graphene and Cu resulted in the growth of rotated graphene domains ($9.6^{\circ}$ and $8.4^{\circ}$), which showed no significant differences in the Dirac band with respect to different orientations. These rotated graphene domains resulted in grain boundaries which would hinder a large-sized single monolayer growth on Cu substrates.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 1999.10a
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• pp.97-97
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• 1999

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 1999.05a
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• pp.133-133
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• 1999