• Journal of the Korean Magnetics Society
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• v.6 no.6
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• pp.411-416
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• 1996

We have studied the effect of a spin-dependence interface electron scattering on the giant magnetoresistance by adding a Fe magnetic material to the Co/Cu interfaces. The $Fe(50\;{\AA})/[Co(17\;{\AA})/Fe(t\;{\AA})/Cu(24\;{\AA})]_{20}$ multilayers are deposited on the Corning glass 2948 and 7059 substrates in a dc magnetron sputtering system. The magnetoresistance ratio is 22 % in the only Co/Cu multilayer, while it is increased to 26 % with inserted ultra thin Fe interface layer and reduced with increasing thickness of the Fe interface layer. It was investigated to the dependence of the magnetoresistance behaviors on annealing temperature. The magnetic properties of the multilayers were measured by vibrating sample magnetometer. Also, the structures and the surface roughness of samples were characterized by X-ray diffraction and atomic force microscope, respectively. The magnetoresistance ratio was increased to annealing temperature $300^{\circ}C$, but reduced at the temperature higher than $300^{\circ}C$ due to the interfacial diffuse.

• Korean Journal of Materials Research
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• v.23 no.11
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• pp.638-642
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• 2013

Chalcopyrite $CuInSe_2$(CIS) is considered to be an effective light-absorbing material for thin film photovoltaic solar cells. CIS thin films have been electrodeposited onto Mo coated and ITO glass substrates in potentiostatic mode at room temperature. The deposition mechanism of CIS thin films has been studied using the cyclic voltammetry (CV) technique. A cyclic voltammetric study was performed in unitary Cu, In, and Se systems, binary Cu-Se and In-Se systems, and a ternary Cu-In-Se system. The reduction peaks of the ITO substrate were examined in separate $Cu^{2+}$, $In^{3+}$, and $Se^{4+}$ solutions. Electrodeposition experiments were conducted with varying deposition potentials and electrolyte bath conditions. The morphological and compositional properties of the CIS thin films were examined by field emission scanning electron microscopy (FE-SEM) and energy dispersive spectroscopy (EDS). The surface morphology of as-deposited CIS films exhibits spherical and large-sized clusters. The deposition potential has a significant effect on the film morphology and/or grain size, such that the structure tended to grow according to the increase of the deposition potential. A CIS layer deposited at -0.6 V nearly approached the stoichiometric ratio of $CuIn_{0.8}Se_{1.8}$. The growth potential plays an important role in controlling the stoichiometry of CIS films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.12a
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• pp.68-70
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• 2006

$CuInS_2$ thin films were synthesized by sulpurization of Cu/In Stacked elemental layer deposited onto glass Substrates by vacuum furance annealing at temperature 200[$^{\circ}C$]. And structural and electrical properties were measured in order to certify optimum conditions for growth of the ternary compound semiconductor $CuInS_2$ thin films with non-stoichiometry composition. $CuInS_2$ thin film was well made at the heat treatment 200 [$^{\circ}C$] of SLG/Cu/In/S stacked elemental layer which was prepared by thermal evaporator, and chemical composition of the thin film was analyzed nearly as the proportion of 1:1:2. Physical properties of the thin film were investigated at various fabrication conditions substrate temperature, annealing and temperature, annealing time by XRD, FE-SEM and hall measurement system. At the same time, carrier concentration, hall mobility and resistivity of the thin films was $9.10568{\times}10^{17}[cm^{-3}]$, $312.502[cm^2/V{\cdot}s]$ and $2.36{\times}10^{-2}[{\Omega}{\cdot}cm]$, respectively.

• Korean Journal of Materials Research
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• v.4 no.8
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• pp.870-876
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• 1994

In order to investigate the growth behavior of $Y_{2}Ba_{1}Cu_{1}O_{5}$(211) particles in $Y_{1}Ba_{2}Cu_{3}O_{7-\delta}$(123), 123 samples were quenched in air after heat treatment on polycrystal and single crystal MgO substrates at $1100^{\circ}C$ for various periods. 211 grains grew with the increase in holding time. The growth of 211 grains was faster on the polycrystal MgO substrate than on the single crystal MgO substrate. In the samples with the compositions of 211+xCuO($0.2\le X \le 0.8$), the growth rate of 211 grains increased with the increase in CuO content. In the sample with x=0.6 the largest 211 grains were observed. 211 grains in the $Y_{2}Ba_{1}Cu_{1.8}Sn_{0.1}O_{5+\delta}$ samples were distributed very finely and homogeneously. The retarding effect of $SnO_2$ addition on the growth of 211 grain appeared more pronounced in a CuO melt than in a $BaCuO_{2}$+ CuO melt.

• Bulletin of the Korean Chemical Society
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• v.32 no.5
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• pp.1559-1563
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• 2011

Thermal hydrogenation of phenylacetylene (PA, $C_8H_6$) to styrene ($C_8H_8$) on pre-$C_xH_y$- and C-covered Cu(111) single crystal substrates has been studied using temperature-programmed desorption (TPD) mass spectrometry. Chemisorbed PA with an acetylene group has been proved to be associated with hydrogen of pre-adsorbed $C_xH_y$ to form styrene (104 amu) on Cu surface. For the parent (PA) mass (102 amu) TPD profile, the TPD peaks at 360 K and 410 K are assigned to chemisorbed vertically aligned PA and flat-lying cross-bridged PA, respectively (J. Phys. Chem. C 2007, 111, 5101). The relative $I_{360K}/I_{410K}$ TPD ratio dramatically increases with increasing pre-adsorbed $C_xH_y$ before dosing PA, while the ratio does not increase for pre-C-covered surface. For PA on pre-$C_xH_y$-covered Cu(111) surface, styrene desorption is enhanced relative to the parent PA desorption, while styrene formation is dramatically quenched on pre-C-covered (lack of adsorbed hydrogen nearby) surface. It appears that only cross-bridged PA associates with adsorbed hydrogen to form styrene that promptly desorbs at 410 K, while vertically aligned PA is less likely to participate in forming styrene.

• Korean Journal of Materials Research
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• v.28 no.10
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• pp.564-569
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• 2018

$Cu_2ZnSn(S,Se)_4$ (CZTSSe) films were prepared on Mo coated soda lime glass substrates by sulfo-selenization of sputtered stacked Zn-Sn-Cu(CZT) precursor films. The precursor was dried in a capped state with aqueous NaOH solution. The CZT precursor films were sulfo-selenized in the S + Se vapor atmosphere. Sodium was doped during the sulfo-selenization treatment. The effect of sodium doping on the structural and electrical properties of the CZTSSe thin films were studied using FE-SEM(field-emission scanning electron microscopy), XRD(X-ray diffraction), XRF(X-ray fluorescence spectroscopy), dark current, SIMS(secondary ion mass spectrometry), conversion efficiency. The XRD, XRF, FE-SEM, Dark current, SIMS and cell efficiency results indicated that the properties of sulfo-selenized CZTSSe thin films were strongly related to the sodium doping. Further detailed analysis and discussion for effect of sodium doping on the properties CZTSSe thin films will be discussed.

• Transactions on Electrical and Electronic Materials
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• v.10 no.5
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• pp.169-172
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• 2009

The ZnO/CuSn/ZnO (ZCSZ) multilayer films were deposited on polycarbonate substrates using reactive RF and DC magnetron sputtering. The thickness of each layer was 50 nm/5 nm/45 nm, respectively. The ZCSZ films showed a sheet resistance of $44{\Omega}$/Sq, which was an order of magnitude lower than that indium tin oxide (ITO) films. Although the ZCSZ films had a CuSn interlayer that absorbed visible light, both films had similar optical transmittances of 74% in the visible wavelength region. The figure of merit of the ZCSZ films was $1.0{\times}10^{-3}{\Omega}^{-1}$ and was greater than the value of the ITO films, $1.6{\times}10^{-4}{\Omega}^{-1}$. From the X-ray diffraction (XRD) analysis, the ITO films did not show any diffraction peaks, whereas the ZCSZ films showed diffraction peaks for the ZnO (100) and (002) phases. The hardness of the ITO and ZCSZ films were 5.8 and 7.1 GPa, respectively, which were determined using nano-indentation. From these results, the ZCSZ films exhibited greater optoelectrical performance and hardness compared to the conventional ITO films.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.273.1-273.1
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• 2014

Graphene, a two dimensional plane structure of $sp^2$ bonding, has been promised for a new material in many scientific fields such as physics, chemistry, and so on due to the unique properties. Chemical vapor deposition (CVD) method using transitional metals as a catalyst can synthesize large scale graphene with high quality and transfer on other substrates. However, it is difficult to control the number of graphene layers. Therefore, it is important to manipulate the number of graphene layers. In this work, homogeneous solid solution of Cu and Ni was used to control the number of graphene layers. Each films with different thickness ratio of Cu and Ni were deposited on $SiO_2/Si$ substrate. After annealing, it was confirmed that the thickness ratio accords with the composition ratio by X-ray diffraction (XRD). The synthesized graphene from CVD was analyzed via raman spectroscopy, UV-vis spectroscopy, and 4-point probe to evaluate the properties. Therefore, the number of graphene layers at the same growth condition was controlled, and the correlation between mole fraction of Ni and the number of graphene layers was investigated.

• Journal of Korean Vacuum Science & Technology
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• v.1 no.1
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• pp.30-37
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• 1997

Interactions of Cu films with Si substrates separated by thin layers of molybdenum and molybdenum nitride were investigated in the viewpoint of diffusion barrier to copper. the diffusion barrier behavior of the layers was studied as functions of deposition and annealing conditions by cross-sectional transmission electron microscopy and Nomarski microscopy. the layers deposited at $N_2$ gas ratios of 0.4 and 0.5 exhibited good diffusion barrier behaviors up to $700^{\circ}C$, mainly due to the phase transformation of molybdenum to $\gamma$-Mo$_2$N phase. The increase in the N gas ratio in deposition elevates the lower limit of barrier failure temperature. Futhermore, amorphous molybdenum nitride films deposited at 20$0^{\circ}C$ and 30$0^{\circ}C$ did not fail, while the crystalline $\gamma$-Mo$_2$N films deposited at 40$0^{\circ}C$ and 50$0^{\circ}C$ showed signs of interlayer interactions between Cu and Si after annealing at 75$0^{\circ}C$ for 30 minutes. Therefore, the amorphous nature of the molybdenum nitride layer enhanced its ability to reduce Cu diffusion and its stability as a diffusion barrier at elevated temperatures.

• Journal of the Korean Chemical Society
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• v.34 no.6
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• pp.555-560
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• 1990

High temperature superconducting films of $YBa_2Cu_3O_{7-x}$ were fabricated on the (100) single crystal faces of YSZ (yttria stabilized zirconia) and SrTi$O_3$ by aerosol spray using ultrasonic atomization. The superconducting phase was formed by a three-step process: (a) spraying of a stoichiometric solution of nitrates of yttrium, barium, and copper on heated substrates kept at 250$^{\circ}C$, (b) preheating of the sprayed films in air at 550$^{\circ}C$, and (e) sintering of the films in flowing oxygen at 950$^{\circ}C$, followed by furnace cooling. Resistances of the films were measured by the dc four-probe method and superconductivity was confirmed above the liquid nitrogen temperature.