• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.91.2-91.2
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• 2010

The use of plated front contact for metallization of silicon solar cell may alternative technologies as a screen printed and silver paste contact. This technologies should allow the formation of contact with low contact resistivity a high line conductivity and also reduction of shading losses. The better performance of Ni/Cu contacts is attributed to the reduced series resistance due to better contact conductivity of Ni with Si and subsequent electroplating of Cu on Ni. The ability to pattern narrower grid lines for reduced light shading combined with the lower resistance of a metal silicide contact and improved conductivity of plated deposit. This improves the FF as the series resistance is deduced. This is very much required in the case of low concentrator solar cells in which the series resistance is one of the important and dominant parameter that affect the cell performance. A selective emitter structure with highly dopes regions underneath the metal contacts, is widely known to be one of the most promising high-efficiency solution in solar cell processing. This paper using selective emitter structure technique, fabricated Ni/Cu plating metallization cell with a cell efficiency of 17.19%.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2004.09a
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• pp.233-241
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• 2004

A new alloy definition will be presented concerning increasing demands for the board level reliability of miniaturized interconnections. The damage mechanism for LFBGA components on different board finishes is not quite understood. Further demands from mobile phones are the drop test, characterizing interface performance of different package constructions in relation to decreased pad constructions and therefore interfaces. The paper discusses the characterization of interfaces based on SnPb, SnPbXYZ, SnAgCu and SnAgCuInNd ball materials and SnAgCuInNd as solder paste, the stability after accelerated tests and the description of modified interfaces strictly related to the assembly conditions, dissolution behavior of finishes on board side and the influence of intermetallic formation. The type of intermetallic as well as the quantity of intermetallics are observed, primaliry the hardness, E modules describing the ability of strain/stress compensation. First results of board level reliability are presented after TCT-40/+150. Improvement steps from the ball formulation will be discussed in conjunction to the implementation of lead free materials In order to optimize ball materials for area array devices accelareted aging conditions like TCTs were used to analyze the board level reliability of different ball materials for BGA, LFBGA, CSP, Flip Chip. The paper outlines lead-free ball analysis in comparison to conventional solder balls for BGA and chip size packages. The important points of interest are the description of processability related to existing ball attach procedures, requirements of interconnection properties and the knowledge gained the board level reliability. Both are the primary acceptance criteria for implementation. Knowledge about melting characteristic, surface tension depend on temperature and organic vehicles, wetting behavior, electrical conductivity, thermal conductivity, specific heat, mechanical strength, creep and relaxation properties, interactions to preferred finishes (minor impurities), intermetallic growth, content of IMC, brittleness depend on solved elements/IMC, fatigue resistance, damage mechanism, affinity against oxygen, reduction potential, decontamination efforts, endo-/exothermic reactions, diffusion properties related to finishes or bare materials, isothermal fatigue, thermo-cyclic fatigue, corrosion properties, lifetime prediction based on board level results, compatibility with rework/repair solders, rework temperatures of modified solders (Impurities, change in the melting point or range), compatibility to components and laminates.

• Journal of the Korean Society of Food Science and Nutrition
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• v.30 no.3
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• pp.388-394
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• 2001

This study was conducted ton investigate the mineral contents of commercial baby foods. Samples were classified into 4 groups; powdered formula, baby juice product (domestic), juice and paste products (imported) and soymilk-based formula. We analyzed Ca, P, Mg, Na, K, Fe, Cu, Zn contents by atomic absorption spectrophotometer after dry-ashing. The difference of analyzed value versus labeled value and Ca/P ratio of analyzed value were calculated. The difference (%) of analyzed value on the labeled value was Ca: 98.6, P: 121.8, Mg: 146.1, Na: 87.4, K: 104.3, Fe: 104.8, Cu: 120.2, Zn: 109.8 in powdered formula, Mg showed the highest difference among the elements. The Ca/P ratio of powdered formula was 1.41 (1.70-1.99). Baby juice products (domestic) were fortified Ca, Fe and the difference (%) of analyzed value on labeled value of Ca and Fe contents was 131.8, 110.2, respectively. The Ca/P ratio of these was 2.36 (1.64-3.71). Differently the domestic products, imported juice and paste products were not fortified Ca, Fe and its Ca/P ratio was 0.38(0.14-0.59). The difference (%) of analyzed value on the labeled value was Ca: 110.2, Mg: 179.5, Na: 83.7, K: 87.8, Cu: 107.8, Fe: 219.8, Zn: 100.5, P: 126.6 in soymilk-based formula, Fe showed the highest difference among the elements. The Ca/P ratio of soymilk-based formula was 1.17 (1.04-0.39).

• Journal of the Korean institute of surface engineering
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• v.49 no.1
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• pp.54-61
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• 2016

Screen printing of commercially available Ag paste is the most widely used method for the front side metallization of Si solar cells. However, the metallization using Ag paste is expensive and needs high temperature annealing for reliable contact. Among many metallization schemes, Ni/Cu/Sn plating is one of the most promising methods due to low contact resistance and mass production, resulting in high efficiency and low production cost. Ni layer serves as a barrier which would prevent copper atoms from diffusion into the silicon substrate. However, Ni based schemes by electroless deposition usually have low thermal stability, and require high annealing process due to phosphorus content in the Ni based films. These problems can be resolved by adding W element in Ni-based film. In this study, Ni-W-P alloys were formed by electroless plating and properties of it such as sheet resistance, resistivity, specific contact resistivity, crystallinity, and morphology were investigated before and after annealing process by means of transmission line method (TLM), 4-point probe, X-ray diffraction (XRD), and Scanning Electron Microscopy (SEM).

• Journal of the Microelectronics and Packaging Society
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• v.12 no.4 s.37
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• pp.301-306
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• 2005

Aging characteristics of newly developed Sn-1.8Bi-0.7Cu-0.6In solder was evaluated by shear strength and microstructure. Stencil printing was applied to form solder. The shear strength of Sn-1.8Bi-0.7Cu-0.6In at $150^{\circ}C$ showed the highest values through aging. Intermetallic compounds formed on the interface between solder and Au/Cu/Ni/Al UBM were $(Cu,\;Ni)_6Sn_5$ Furthermore, it was found that Spatting of Intermetallic compounds started before 500h aging at $150^{\circ}C$.

• Applied Chemistry for Engineering
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• v.9 no.7
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• pp.1011-1017
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• 1998

$YBa_2Cu_3O_{6+x}(Y123)-Ag$ high-Tc superconducting wires were fabricated by plastic extrusion technique using pyrophoric synthetic and mechanical mixing powder with and without Ag addition(20 wt.%). This method involves powder preparation, plastic paste making, die extrusion, binder burn-out and the sintering process. In order to fabricate a good-quality superconducting body, it is required to use homogeneous and fine-size power as a starting materials. $Y_2O_3-BaCO_3-CuO$ precursor powders with/without Ag addition were prepared both by pyrophoric synthetic(PS) and mechanical mixing(MM) method of raw powders. The formation kinetics of the powder mixtures into Y123 phase was investigated at various temperatures and times in air atmosphere. The powder prepared by PS method was more easily converted into a Y123 phase than the MM powder. The fine size and good chemical homogeneity of the powder prepared by PS method is attributable to the fast formation into a Y123 phase. The critical current density($J_c$) of the Y123-Ag superconducting wires made by plastic extrusion method were in the range of $150A/cm^2{\sim}230A/cm^2$. depending on the charateristics of starting material powders. $J_c$ of the wire prepared by pyrophoric synthetic powder with 20 wt.% Ag addition was $230A/cm^2$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.23 no.2
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• pp.108-113
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• 2013

Chalcopyrite material $CuInSe_2$ (CIS) is known to be a very prominent absorber layer for high efficiency thin film solar cells. Current interest in the photovoltaic industry is to identify and develop more suitable materials and processes for the fabrication of efficient and cost-effective solar cells. Various processes have been being tried for making a low cost CIS absorber layer, this study obtained the CIS nanoparticles using commercial powder of 6 mm pieces for low cost CIS absorber layer by high frequency ball milling and cryogenic milling. And the CIS absorber layer was prepared by paste coating using milled-CIS nanoparticles in glove box under inert atmosphere. The chalcopyrite $CuInSe_2$ thin films were successfully made after selenization at the substrate temperature of $550^{\circ}C$ in 30 min, CIS solar cell of Al/ZnO/CdS/CIS/Mo structure prepared under various deposition process such as evaporation, sputtering and chemical vapor deposition respectively. Finally, we achieved CIS nanoparticles solar cell of electric efficient 1.74 % of Voc 29 mV, Jsc 35 $mA/cm^2$ FF 17.2 %. The CIS nanoparticles-based absorber layers were characterized by using EDS, XRD and HRSEM.

• Electronic Materials Letters
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• v.14 no.6
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• pp.718-724
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• 2018

With the development of photovoltaic industry, the cost of photovoltaic power generation has become the significant issue. And the metallization process has decided the cost of original materials and photovoltaic efficiency of the solar cells. Nowadays, double printing process has been introduced instead of one-step printing process for front contact of polycrystalline silicon solar cells, which can effectively improve the photovoltaic conversion efficiency of silicon solar cells. Here, the relative cheap Cu paste has replaced the expensive Ag paste to form Ag/Cu composite front contact of silicon solar cells. The photovoltaic performance and the cost of photovoltaic power generation have been investigated. With the optimization on structure and height of Cu finger layer for Ag/Cu composite double-printed front contact, the silicon solar cells have exhibited a photovoltaic conversion efficiency of 18.41%, which has reduced 3.42 cent per Watt for the cost of photovoltaic power generation.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.281-281
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• 2013

본 연구에서는 고출력 금속 인쇄회로기판(Metal PCB) 개발을 위해 절연층으로 양극산화막을 형성하고 이 절연층 위에 Screen Printing 법을 이용하여 Ag paste를 패턴 인쇄한 알루미늄 기판을 사용하였다. 이 기판 위에 무전해 방식으로 구리 박막을 성장시켜, 무전해 도금 조건이 구리 박막 성장에 미치는 영향에 대해 연구하였다. 무전해 도금 시, pH 농도와 plating 온도를 변화시켜 이 변화에 따른 무전해 구리도금 박막의 물리적/전기적 특성을 비교 분석하여 무전해 도금에 의해 형성된 구리 박막과 기판과의 상관 관계도 비교 검토하였다. XRD (X-ray Diffraction), 광학현미경, FE-SEM (Field Emission Scanning Electron Microscope)등을 이용하여 성장된 구리 박막 및 기판의 결정성, 표면 및 단면 형상 등을 측정하였고, XPS (X-ray Photoelectron Spectroscopy)를 이용하여 무전해 도금에 의한 Cu의 화학구조 및 불순물 상태를 조사하였다.

• Electrical & Electronic Materials
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• v.6 no.6
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• pp.505-513
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• 1993

본 논문은 전자 부품의 Soldring기에 사용되는 접합제를 Flux를 포함한 Solder paste 대신에 도금막을 이용하기 위한 Sn 도금막 형성 프로세스를 검토한 것이다. 반도체 Device를 Packaging한 외부단자(lead frame)과 HIC상의 후막전극(Ag/Pd)과의 접합 및 PCB상의 Cu land와의 접합시에는 스크린 프린트에 의한 Solder Paste가 일반적으로 사용되고 있다. 본 논문은 Fluxless Soldering의 한수단으로 도금막을 lead상에 형성시켜 접합 재료로서의 형성 프로세스 및 도금막의 특성과 도금형성 Paramete와의 관련성을 실험적으로 검토한 것으로 전류밀도 200 A/m$^{2}$의 조건으로 형성한 Sn 도금막이 접합용으로 최적조건임을 밝혔다.