• Journal of Powder Materials
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• v.9 no.2
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• pp.124-132
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• 2002

Nano Cu powders, synthesized by Pulsed Wire Evaporation (PWE) method, have been compacted by Magnetic Pulsed Cojpaction(MPC) method. The microstructure and mechanical properties were analyzed. The optimal condition for proper mechanical properties with nanostructure was found. Both pure nano Cu powders and passivated nano Cu powders were compacted, and the effect of passivated layer on the mechanical properties was investigated. The compacts by MPC, which had ultra-fine and uniform nanostructure, showed higher density of 95% of theoretical density than that of static compaction. The pur and passivated Cu compacted at $300^{\circ}C$ exhibited maximum hardnesses of 248 and 260 Hv, respectively. The wear resistance of those compacts corresponded to the hardness.

• Journal of Powder Materials
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• v.14 no.5
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• pp.320-326
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• 2007

Ag-Cu alloy nano powders were fabricated by the electrical explosion of Cu-plated Ag wires. Ag wires of 0.2mm diameter was electroplated to final diameter of 0.220 mm and 0.307 mm which correspond to Ag-27Cu and Ag-68Cu alloy. The explosion product consisted of equilibrium phases of ${\alpha}-Ag$ and ${\beta}$-Cu. The particle size of Ag-Cu nano powders were 44 nm and 70 nm for 0.220 mm and 0.307 mm wires, respectively. The Ag-Cu nano powders contained less Cu than average value due to higher sublimation energy compared to that of Ag. As a result, micron-sized spherical particles formed from liquid droplets contained higher Cu content.

• Bulletin of the Korean Chemical Society
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• v.31 no.8
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• pp.2283-2288
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• 2010

Nanostructured copper compounds were grown by electrochemical anodization of copper foil in aqueous NaOH under varying conditions including electrolyte concentration, reaction temperature, current density, and reaction time. Their morphology and atomic composition were investigated by using SEM, TEM, XRD, EDS and XPS. At the conditions ([NaOH] = 1 M, $20^{\circ}C$, $2\;mA\;cm^{-2}$), wire-like orthorhombic $Cu(OH)_2$ nanobundles with an average width of 100 - 300 nm and length of $10\;{\mu}m$ were synthesized with the preferential [100] growth direction. Furthermore, when the concentration decreased to 0.5 M NaOH, the 1D nanobundle structure became narrower and longer without any change in compositions or crystalline structure. Side reaction pathways appeared to compete with the 1D nanostructure formation channels: the formation of CuO nanoleaves at $50^{\circ}C$ via the sequential dehydration of $Cu(OH)_2$, CuO/$Cu_2O$ aggregates in 4 M NaOH, and $Cu_2O$ nanoparticles and CuO nanosheets at lower current density.

• Journal of Powder Materials
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• v.14 no.2 s.61
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• pp.108-115
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• 2007

Cu-Ni-P alloy nano powders were fabricated by the electrical explosion of electroless Ni plated Cu wires. The effect of applied voltage on the explosion was examined by applying pulse voltage of 6 and 28 kV, The estimated overheating factor, K, were 1.3 for 6 kV and 2.2 for 28 kV. The powders produced with pulse voltage of 6 kV were composed of Cu-rich solid solution, Ni-rich solid solution, and $Ni_3P$ phase. While, those produced with 28 kV were complete Cu-Ni-P solid solution and small amount of $Ni_3P$ phase. The initial P content of 6.5 at.% was reduced to 2-3 at.% during explosion due to its high vapour pressure.

• Journal of Powder Materials
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• v.15 no.4
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• pp.285-291
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• 2008

Fe based ($Fe_{68.2}C_{5.9}Si_{3.5}B_{6.7}P_{9.6}Cr_{2.1}Mo_{2.0}Al_{2.0}$) amorphous powder were produced by a gas atomization process, and then ductile Cu powder fabricated by the electric explosion of wire(EEW) were mixed in the liquid (methanol) consecutively. The Fe-based amorphous - nanometallic Cu composite powders were compacted by a spark plasma sintering (SPS) processes. The nano-sized Cu powders of ${\sim}\;nm$200 produced by EEW in the methanol were mixed and well coated with the atomized Fe amorphous powders through the simple drying process on the hot plate. The relative density of the compacts obtained by the SPS showed over 98% and its hardness was also found to reach over 1100 Hv.

• Journal of Powder Materials
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• v.10 no.2
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• pp.83-88
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• 2003

Nanocrystalline materials of Ni and Ni-Cu alloy have been synthesized by the pulsed wire evaporation (PWE) method and these abnormal magnetic properties in the magnetic ordered state have been characterized using both VSM and SQUID in the range of high and low magnetic fields. Ni and Ni-Cu particles with an average size of 20 to 80 nm were found to influence magnetic hysterisis behavior and the results of powder neutron diffraction patterns and saturation magnetization curves are shown to indicate the absence of the NiO phase. The shifted hysterisis loop and irreversibility of the magnetization curve in the high field region were observed in the magnetic-ordered state of both Ni and Ni-Cu. The virgin magnetization curve for Ni slightly spillover on the limited hysterisis loop ($\pm$20kOe). This irreversibility in the high field of 50 kOe can be explained by non-col-linear behavior and the existence of the metastable states of the magnetization at the surface layer (or core) of the particle in the applied magnetic field. Immiscible alloy of Cu-Ni was also found to show irreversibility having two different magnetic phases.

• Journal of the Korean Vacuum Society
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• v.18 no.3
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• pp.203-207
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• 2009

Copper is known as a replacement for aluminum wire which is used for semiconductor. Because specific resistance of Cu ($1.67{\mu}{\Omega}$-cm) is lower than that of Al ($2.66{\mu}{\Omega}$-cm), Cu reduce RC delay time. Although melting point of Cu($1085^{\circ}C$) is higher than melting point of Al, Cu have characteristic to easily react with Silicon(Si) in low temperature, and it isn't good at adhesive strength with Si. For above these reason, research of diffusion barrier to prevent reaction between Cu and Si and to raise adhesive strength is steadily advanced. Our study group have researched on W-C-N (tungsten-carbon-nitrogen) Diffusion barrier for preventing diffusion of Cu through semiconductor. By recent studies, It's reported that W-C-N diffusion barrier can even precent Cu and Si diffusing effectively at high temperature. In this treatise, we vaporized different proportion of N into diffusion barrier to research Cu's Electromigration based on the results and studied surface hardness in the heat process using nano scale indentation system. We gain that diffusion barrier containing nitrogen is more stable for Cu's electromigration and has stronger surface hardness in heat treatment process.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.133.2-133.2
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• 2016

차세대 디스플레이로 유연하고 투명한 기능들이 요구되면서 Indium Tin Oxide(ITO)를 대체하기 위한 투명전극 개발 연구가 많이 수행되고 있다. ITO는 높은 투과도와 낮은 저항으로 현재 가장 많이 활용되고 있는 투명전극 소재이지만 유연성이 떨어져 유연 터치 패널 소재로 활용하기 어렵다. 이러한 문제 해결을 위해 ITO 대체 물질로 CNT, Graphene, Metal mesh, Ag nano wire, 전도성 고분자 등의 차세대 투명 전극 소재가 대두되고 있다. 본 연구에서는 메탈 메쉬 전극 소재로 사용하기 위해 Cu 박막 증착 시 플라즈마 표면처리를 통해 밀착력 및 저항을 개선하였다. Cu 금속 박막의 양산화를 위한 공정으로 자체 제작한 Linear Ion Source(LIS)가 부착된 roll to roll 시스템을 적용하여 플라즈마 전처리 공정 및 Ni buffer layer 도입 이후 Cu 박막을 형성하였다. 그 결과 PET 기판과 Cu 박막 사이의 밀착력을 0 degree에서 5 degree까지 향상시킬 수 있었고, 플라즈마 표면처리를 시행함으로써 저항 또한 감소되는 결과를 얻을 수 있었다. 본 연구를 통해서 폴리머 기판 소재에 in-situ로 표면처리 및 Cu 금속 박막을 증착함으로써 금속 박막의 밀착력 및 전기적 특성이 향상되는 공정 기술을 개발하였다.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2016.11a
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• pp.148-148
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• 2016

디스플레이 시장이 rigid에서 flexible로 변화하기 시작하면서 유연 투명전극 소재에 대한 수요가 증가하고 있다. 투명전극으로 대표되는 Indium Tin Oxide(ITO)는 고투과 저저항의 장점을 가지지만 유연성이 떨어져 이를 대체 할 투명전극 소재로 Metal mesh, Ag nano-wire, CNT, Graphene, Conductive polymer 등에 대한 응용 연구가 활발히 진행되고 있다. 본 연구에서는 Metal mesh 용 Cu thin film 형성을 위해 플라즈마 표면처리 기술로 플라스틱 기판과 Cu 박막 사이의 밀착력을 향상시키고자 공정 연구를 수행하였다. 고품질의 Cu thin film 제작을 위해 양산용 roll to roll 장비를 이용하였고, 선형이온소스를 적용하여 플라즈마 표면처리를 수행하였다. 이후 마그네트론 스퍼터링을 통해 Ni buffer layer 및 Cu 박막 증착 공정을 in-situ로 진행하였다. 이러한 공정을 통해 제작한 Cu thin film의 밀착력을 평가하기 위해 cross cut test(ASTM D3359)를 수행하였다. 그 결과 플라스틱 기판과 Cu 금속 박막 사이의 밀착력이 0B에서 5B까지 향상된 것을 확인하였고, 플라즈마 표면처리 공정을 통해서 저항 또한 감소되는 결과를 얻을 수 있었다. 본 연구를 통해 polyethylene terephthalate(PET)뿐만 아니라 polyimide(PI) 기판 상에서도 플라즈마 표면처리를 통해 금속 박막의 밀착력이 향상되는 결과를 확인하였으며, flexible copper clad laminate (FCCL) 같은 유연 정보 소자 분야에 응용 가능할 것으로 기대된다.

• Journal of the Microelectronics and Packaging Society
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• v.22 no.1
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• pp.7-14
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• 2015

Recently, advances in nano-material researches have opened the door for various transparent conductive materials, which include carbon nanotube, graphene, Ag and Cu nanowire, and printable metal grids. Among them, Ag nanowires are particularly interesting to synthesize because bulk Ag exhibits the highest electrical conductivity among all metals. Here we reviewed recently-published research works introducing various devices from organic light emitting diode to tactile sensing devices, all of which are employing AgNW for a conducting material. They proposed methods to enhance the stretchability and reversibility of the transparent electrodes, and apply them to make various flexible and stretchable electronics. It is expected that Ag nanowires are applicable to a wide range of high-performance, low-cost, stretchable electronic devices.