• 한국표면공학회지
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• 제43권3호
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• pp.148-153
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• 2010

Transparent conducting films having a hybrid structure of GZO/Metal/GZO were prepared on glass substrates by sequential deposition using DC magnetron sputtering. Silver, copper, aluminum and zinc thin films were used as the intermediate metal layers in the hybrid structure. The electrical and optical properties of hybrid transparent conducting films were investigated with varying the thickness of metal layer or GZO layers. With increasing the metal thickness, hybrid films showed a noticeable improvement of the electrical conductivity, which is mainly dependent on the electrical property of the metal layer. GZO(40 nm)/Ag(10 nm)/GZO(40 nm) film exhibits a resistivity of $5.2{\times}10^{-5}{\Omega}{\cdot}cm$ with an optical transmittance of 82.8%. For the films with Zn interlayer, only marginal reduction in the resistivity was observed. Furthermore, unlike other metals, hybrid films with Zn interlayer showed a decrease in the resistivity with increasing the GZO thickness. The optimal thickness of GZO layer for anti-reflection effect at a given thickness of metal (10 nm) was found to be critically dependent on the refractive index of the metal. In addition, x-ray diffraction analysis showed that the insertion of Ag layer resulted in the improvement of crystallinity of GZO films, which is beneficial for the electrical and optical properties of hybrid-type transparent conducting films.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part 1
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• pp.36-37
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• 2006

This study aims to investigate the usage of nano-scale particles in a micro metal injection molding ($\mu$-MIM) process. Nanoscale particle is effective to improve transcription and surface roughness in small structure. Moreover, the effects of hybrid micro/nano particles, Cu/Cu and SUS/Cu were investigated. Small dumbbell specimens were produced using various feedstocks prepared by changing binder content and fraction of nano-scale Cu particle (0.3 and $0.13{\mu}m$ in particle size). The effects of adding the fraction of nano-scale Cu powder on the melt viscosity of the feedstock, microstructure, density and tensile strength of sintered parts were discussed.

• 한국결정성장학회지
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• 제15권5호
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• pp.193-197
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• 2005

층상 구조의 유기-무기 복합 소재 $Cu_2(OH)_3(CH_3COO){\cdot}H_2O$를 전구체로 사용하여 CuO를 합성하였다. 외부의 다른 유기화합물 주형이 없이 단순한 $Cu_2(OH)_3(CH_3COO){\cdot}H_2O$의 열분해 방법을 사용하였다 이 방법은 저렴한 가격으로 단일 결정의 CuO 입자를 양산하는 방법을 제공한다 응집된 CuO 입자의 형태는 전구체의 구조에 크게 영향을 받는다.

• 한국자기학회지
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• 제23권6호
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• pp.184-187
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• 2013

MgO 기반 스핀소자에 유기장벽 Cu-Phthalocyanine(CuPc)가 삽입된 무기${\backslash}$유기 터널 접합 소자 Fe${\backslash}$MgO(001)${\backslash}$CuPc${\backslash}$Co의 자기 저항 현상과 그 계면 특성의 상관관계에 대한 연구가 진행되었다. 특히 1.6 nm MgO(001)${\backslash}$x nm CuPc(x = 0~5) 계면의 전자기적 특성을 스핀 편극된 준안정상태 He 원자 분광계(Metastable Helium De-excitation Spectroscopy, MDS)를 이용하여 규명하였다. 에피 성장된 MgO(001) 위에 적층된 약 1.6 nm 두께의 CuPc 층상구조의 표면에서, MgO(001) 하지층의 표면과는 달리, up-spin band와 down-spin band의 비대칭성이 현저해지는 것으로 관찰되었다. 이 결과는 실온과 저온(77 K)에서 ~10 %와 30 %로 각각 측정된 자기저항 현상과 복합장벽을 통과하는 스핀거동을 이해하는데 중요한 단초를 제공해 준다.

• 한국재료학회지
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• 제24권10호
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• pp.543-549
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• 2014

A zinc oxide (ZnO) hybrid structure was successfully fabricated on a glass substrate by metal organic chemical vapor deposition (MOCVD). In-situ growth of a multi-dimensional ZnO hybrid structure was achieved by adjusting the growth temperature to determine the morphologies of either film or nanorods without any catalysts such as Au, Cu, Co, or Sn. The ZnO hybrid structure was composed of one-dimensional (1D) nanorods grown continuously on the two-dimensional (2D) ZnO film. The ZnO film of 2D mode was grown at a relatively low temperature, whereas the ZnO nanorods of 1D mode were grown at a higher temperature. The change of the morphologies of these materials led to improvements of the electrical and optical properties. The ZnO hybrid structure was characterized using various analytical tools. Scanning electron microscopy (SEM) was used to determine the surface morphology of the nanorods, which had grown well on the thin film. The structural characteristics of the polycrystalline ZnO hybrid grown on amorphous glass substrate were investigated by X-ray diffraction (XRD). Hall-effect measurement and a four-point probe were used to characterize the electrical properties. The hybrid structure was shown to be very effective at improving the electrical and the optical properties, decreasing the sheet resistance and the reflectance, and increasing the transmittance via refractive index (RI) engineering. The ZnO hybrid structure grown by MOCVD is very promising for opto-electronic devices as Photoconductive UV Detectors, anti-reflection coatings (ARC), and transparent conductive oxides (TCO).

• 한국표면공학회지
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• 제34권5호
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• pp.429-434
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• 2001

Ti-Cu-N nanocomposite films deposited by arc ion plating and magnetron sputter hybrid system with various copper contents. The microstructure and mechanical properties of Ti-Cu-N superhard nanocomposite films depend on the Cu concentration. In X-ray diffraction (XRD) analysis, intensity of TiN (111) and TiN (220) peak decreased and peak broadness increased with increasing the copper contents and Cu peak was not detected. The grain size of films decreased with increasing at%Cu and Transmission Electron Microscopy (TEM) analysis also showed that Ti-Cu-N film containing 1.5at%Cu was composed of very fine (<10nm) nanocrystalline grains. The maximum hardness of Ti-Cu-N (1.5at%Cu) film reached to 45GPa and friction coefficient was measured 0.3.

• 한국표면공학회지
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• 제43권6호
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• pp.266-271
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• 2010

Ternary Mo-Cu-N films were deposited on Si wafer substrates with various copper contents by magnetron sputtering method using Mo target and Cu target in $Ar/N_2$ gaseous atmosphere. As increasing $N_2$ pressure, the microstructure of Mo-N films changed from ${\gamma}-Mo_2N$ of (111) having face-centered-cubic (FCC) structure to $\delta$-MoN of (200) having hexagonal structure. Detailed the microstructures of the Mo-Cu-N coatings were studied by X-ray diffraction, scanning electron microscopy and field emission transmission electron microscope. The results indicated that the incorporation of copper into the growing Mo-N coating led to the $Mo_2N$ and MoN crystallites were more well-distributed and refined and the copper existed in grain boundary. Ternary Mo-Cu-N films had a composite microstructure of the nanosized crystal crystalline ${\gamma}-Mo_2N$ and $\delta$-MoN surrounded by amorphous $Cu_3N$ phase.

• 대한화학회지
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• 제53권3호
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• pp.257-265
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• 2009

$Cu^{+}$ 및 $Cu^{2+}$와 proline의 결합형태에 따른 구조 및 금속 친화도를 DFT(Density Functional Theory) 방법으로 조사하였다. 금속-proline의 결합과 여러 결합형태에 따른 에너지 순서는 $Cu^{+}$-Proline및 $Cu^{2+}$-proline 착화합물에서 서로 매우 상이함을 알았다. $Cu^{+}$-Proline의 경우, 바닥상태의 구조는 $Cu^{+}$가 중성 proline의 카르보닐 산소 및 이미노기 질소에 배위된 두 자리 배위를 하며, 이에 비해 $Cu^{2+}$-Proline 의 바닥상태의 구조는 zwitter이온 형태 proline의 카르복시기의 두 산소 사이에 chelation을 형성하는 구조임을 확인하였다. 가장 안정한 $Cu^{+}$-Proline 착화합물에서 proline의 금속 이온 친화도는 6-311++G(d,p) 수준에서 76.0 kcal/mol로 계산되었으며, proline의 $Cu^{2+}$ 이온 친화도는 258.5 kcal/mol로 나타났다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.118-118
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• 2011

The Nano-Floating Gate Memory(NFGM) devices with ZnO:Cu thin film embedded in Al2O3 and AlOx-SAOL were fabricated and the electrical characteristics were evaluated. To further improve the scaling and to increase the program/erase speed, the high-k dielectric with a large barrier height such as Al2O3 can also act alternatively as a blocking layer for high-speed flash memory device application. The Al2O3 layer and AlOx-SAOL were deposited by MLD system and ZnO:Cu films were deposited by ALD system. The tunneling layer which is consisted of AlOx-SAOL were sequentially deposited at $100^{\circ}C$. The floating gate is consisted of ZnO films, which are doped with copper. The floating gate of ZnO:Cu films was used for charge trap. The same as tunneling layer, floating gate were sequentially deposited at $100^{\circ}C$. By using ALD process, we could control the proportion of Cu doping in charge trap layer and observe the memory characteristic of Cu doping ratio. Also, we could control and observe the memory property which is followed by tunneling layer thickness. The thickness of ZnO:Cu films was measured by Transmission Electron Microscopy. XPS analysis was performed to determine the composition of the ZnO:Cu film deposited by ALD process. A significant threshold voltage shift of fabricated floating gate memory devices was obtained due to the charging effects of ZnO:Cu films and the memory windows was about 13V. The feasibility of ZnO:Cu films deposited between Al2O3 and AlOx-SAOL for NFGM device application was also showed. We applied our ZnO:Cu memory to thin film transistor and evaluate the electrical property. The structure of our memory thin film transistor is consisted of all organic-inorganic hybrid structure. Then, we expect that our film could be applied to high-performance flexible device.----못찾겠음......

• 한국표면공학회지
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• 제51권1호
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• pp.21-26
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• 2018

The $Cu_2(btc)_3$ metal-organic frameworks (MOF) coated anodic aluminum oxide (AAO) membrane was successfully prepared by layer-by-layer technique using hand spray method. It was confirmed that the $Cu_2(btc)_3$ layer, which has the pore sized in 2-3 nm, on surface of AAO exhibited the polycrystalline thin film structure by XRD analysis. More than 100 repetitive spray cycles were required to obtain more robust and thick MOFs on AAO and it was possible to uniformly coat both the top and bottom surfaces of the AAO. It should be noted that the MOFs also could be coated on surface of pores resulting in reduce the size of pore from 52 nm to 32 nm.