• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.23.2-23.2
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• 2009

기존에 사용되었던 알루미늄 배선 공정은 공정의 배선 크기가 줄어들면서 한계에 다다르고 있다. 따라서 이를 대체하기 위해 여러 가지 새로운 방법들이 고안되고 있으며, 그중 알루미늄을 비저항이 낮고 EM(electro-migration) 저항성이 뛰어난 구리로 대체하려는 연구가 진행되고 있다. 구리 배선은 이미 electroplating 공정을 이용해 산업에 적용되고 있으며, seed layer로는 sputtering 법을 이용하고 있다. 하지만 sputtering 을 포함한 PVD 법은 대부분 종횡비나 단차 피복도가 좋지 않기 때문에 이를 CVD로 교체한다면 많은 장점을 가질 수 있다. 하지만 CVD 공정을 진행하기 위해서는 많은 문제점들이 있는데, 이중 전구체에 대한 문제도 빼놓을 수 없는 이슈이다. Cu(dmamb)2 는 기존에 사용하던 $\beta$-diketonate 계열의 전구체보다 화학적으로 많은 장점을 가지고 있어, CVD 공정에 적합하다. 이에 따라 구리 박막 증착의 공정 조건을 설계하고, 고품질의 박막을 증착하기 위한 다양한 처리법을 고안하여 증착 실험을 진행하였다. 기본적으로 구리는 확산력이 좋아 실리콘계열의 기판에서 확산력이 매우 좋아 기판 내로 확산되기 때문에 이를 방지하기 위하여 Ta, Ti 계열의 박막을 사용하여 확산을 방지하고 있다. 따라서 전이 금속 박막의 표면과 증착 분위기 등을 고려하여 구리를 증착하였으며, 표면의 미세구조 및 성분을 FESEM 등을 통해 분석하였다.

• Korean Journal of Metals and Materials
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• v.47 no.4
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• pp.248-255
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• 2009

A micro thermoelectric device was processed by electroplating the n-type Bi-Te nanowires and ptype Sb-Te nanowires into an alumina template with 200 nm pores. Power generation characteristics of the micro devices composed of the Bi-Te nanowires, the Sb-Te nanowires, and both the Bi-Te and the Sb-Te nanowires were analyzed with applying a temperature difference of $40^{\circ}C$ across the devices along the thickness direction. The n-type Bi-Te and the p-type Sb-Te nanowire devices exhibited thermoelectric power outputs of $3.8{\times}10^{-10}W$ and $4.8{\times}10^{-10}W$, respectively. The output power of the device composed of both the Bi-Te and the Sb-Te nanowires decreased to $1.4{\times}10^{-10}W$ due to a large electrical resistance of the Cu electrode connecting the Bi-Te nanowire array with the Sb-Te nanowire array.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.34 no.1
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• pp.1-8
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• 2010

Natural convection heat transfer rates in a vertical pipe were measured for $Gr_H$ number from 2.1x$10^6$ to 1.2x$10^9$. Using the analogy concept, heat transfer experiments were replaced by mass transfer experiments. A cupric acid - copper sulfate ($H_2SO_4-CuSO_4$) electroplating system was adopted as the mass transfer system and the mass transfer rates were measured. Comparison of the results with the existing laminar and turbulent natural convection heat transfer correlations on a vertical plate showed very good agreements except for the high $Gr_H$ case, where the boundary layer inside the vertical pipe interferes. The agreements showed the usefulness of the analogy experiment method. Using 3 different anode size and 6 different geometrical configurations, the effects of the anode size and position were explored. As expected, the anode size and position do not affect the limiting currents for most cases. These results will be used as the experimental background for the positioning and sizing of the anodes for a more complex experiment.

• Journal of Energy Engineering
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• v.21 no.3
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• pp.254-264
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• 2012

Rayleigh-Benard natural convection experiments were carried out as the preliminary experiment to simulate the natural convection of the core melt at the severe accident conditions. This work focused on the influences of plate separation distance(s), the existence of the side walls and crust geometries of upper and lower plates. Based upon the analogy concept, a cupric acid-copper sulfate electroplating system($H_2SO_4-CuSO_4$) was employed as the mass transfer system and measurements were made for $Ra_s$ ranging from $1.06{\times}10^7$ to $2.91{\times}10^{10}$. The test results measured for a single horizontal plate were in good agreement with the correlation reported by McAdams and those for two horizontal plates showed the similar trend to the existing Rayleigh-Benard heat transfer correlations developed by Dropkin and Somerscales, Globe and Dropkin. The measured heat transfer rate decreased with the increasing separation distance between the two plates and became similar to those for a single horizontal plate. Fin arrays mounted on both upper and lower plates enhanced the heat transfer rates. For all cases, the heat transfer rates measured for open side walls are higher than those for closed ones.

• Journal of Welding and Joining
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• v.23 no.3
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• pp.61-67
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• 2005

Since lead (Pb)-free solders for electronics have higher melting points than that of eutectic Sn-Pb solder, they need higher soldering temperatures. In order to decrease the soldering temperature we tried to coat Sn-Bi layer on $Sn-3.5\%Ag$ solder by electroplating, which applies the mechanism of transient liquid phase bonding to soldering. During heating Bi will diffuse into the $Sn-3.5\%Ag$ solder and this results in decreasing soldering temperature. As bonding samples, the 1608 capacitor electroplated with Sn, and PCB, its surface was finished with electroless-plated Ni/Au, were selected. The $Sn-95.7\%Bi$ coated Sn-3.5Ag was supplied as a solder between the capacitor and PCB land. The samples were reflowed at $220^{\circ}C$, which was lower than that of normal reflow temperature, $240\~250^{\circ}C$, for the Pb-free. As experimental result, the joint of $Sn-95.7\%Bi$ coated Sn-3.5Ag showed high shear strength. In the as-reflowed state, the shear strength of the coated solder showed 58.8N, whereas those of commercial ones were 37.2N (Sn-37Pb), 31.4N (Sn-3Ag-0.5Cu), and 40.2N (Sn-8Zn-3Bi). After thermal shock of 1000 cycles between $-40^{\circ}C$ and $+125^{\circ}C$, shear strength of the coated solder showed 56.8N, whereas the previous commercial solders were in the range of 32.3N and 45.1N. As the microstructures, in the solder $Ag_3Sn$ intermetallic compound (IMC), and along the bonded interface $Ni_3Sn_4$ IMC were observed.

• Journal of the Korean Solar Energy Society
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• v.32 no.4
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• pp.43-50
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• 2012

Metal-metal oxide (M-M oxide) cermet solar selective coatings with a double cermet layer film structure were deposited on the Al-deposited glass substrate by using a directed current (DC) magnetron sputtering technology. M oxide (CrO and ZrO) was used as the ceramic component in the cermets, and Cr and Zr used as the metallic components. In addition, black Cr (Cr-$Cr_2O_3$ cermet) solar selective coatings were deposited on the Ni-plated Cu substrate by using a electroplating method for comparison. The thermal stability tests were carried out for performance evaluation of solar coatings. Reflectance measurements were used to evaluate both solar absorptance(${\alpha}$) and thermal emittance (${\epsilon}$) of the solar coatings before and after thermal testing by using a spectrometer. Optical properties of optimized cermet solar coatings were ${\alpha}{\simeq}0.94-0.96$ and ${\epsilon}{\simeq}0.1$ ($100^{\circ}C$). The results of thermal stability test of M-M oxide solar coatings showed that the Cr-CrO cermet solar selective coatings were more stable than the Zr-ZrO cermet selective coatings at temperature of both $400^{\circ}C$ in air and $450^{\circ}C$ in vacuum. The black Cr solar selective coatings were degraded in air at temperature of $400^{\circ}C$. The main optical degradation modes of these coatings were diffusion of metal atoms, and oxidation.

• Journal of Korean Society of Environmental Engineers
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• v.29 no.12
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• pp.1381-1389
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• 2007

Wastewater discharged by industrial activities of metal finishing and electroplating units is often contaminated by a variety of toxic or otherwise harmful substances which have a negative effects on the water environment. The treatment method of heavy metal-cyanide complexes wastewater by alkaline chlorination have already well-known($1^{st}$ Oxidation: pH 10, reaction time 30 min, ORP 350 mV, $2^{nd}$ Oxidation: ORP 650 mV). In this case, the efficiency for the removal of ferro/ferri cyanide by this general alkaline chlorination is very high as 99%. But the permissible limit of Korean waste-water discharge couldn't be satisfied. The initial concentration of cyanide was 374 mg/L(the Korean permissible limit of cyanide is 1.0 mg/L max.). So a particular focus was given to the treatment of heavy metal-cyanide complexes wastewater by $Zn^{+2}/Fe^{+2}$ ion and coprecipitation after alkaline chlorination. And we could meet the Korean permissible limit of cyanide(the final concentration of cyanide: 0.30 mg/L) by $Zn^{+2}/Fe^{+2}$ ion and coprecipitation(reaction time: 30 min, pH: 8.0, rpm: 240). The removal of Chromium ion by reduction(pH: 2.0 max, ORP: 250 mV) and the precipitation of metal hydroxide(pH: 9.5) is treated as 99% of removal efficiency. The removal of Copper and Nickel ion has been treated by $Na_2S$ coagulation-flocculation as 99% min of the efficiency(pH: $9.09\sim10.0$, dosage of $Na_2S:0.5\sim3.0$ mol). It is important to note that the removal of ferro/ferri cyanide of heavy metal-cyanide complexes wastewater should be employed by $Zn^{+2}/Fe^{+2}$ ion and coprecipitation as well as the alkaline chlorination for the Korean permissible limit of waste-water discharge.

• Journal of the Microelectronics and Packaging Society
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• v.8 no.1
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• pp.33-38
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• 2001

We investigate the via-size dependance of as-electroplated- and reflow-bump shapes for realizing both high-density and high-aspect ratio of solder bump. The solder bump is fabricated by subsequent processes as follows. After sputtering a TiW/Al electrode on a 5-inch Si-wafer, a thick photoresist for via formation it obtained by multiple-codling method and then vias with various diameters are defined by a conventional photolithography technique using a contact alinger with an I-line source. After via formation the under ball metallurgy (UBM) structure with Ti-adhesion and Cu-seed layers is sputtered on a sample. Cu-layer and Sn/pb-layer with a competition ratio of 6 to 4 are electroplated by a selective electroplating method. The reflow-bump diameters at bottom are unchanged, compared with as-electroplated diameters. As-electroplated- and reflow-bump shapes, however, depend significantly on the via size. The heights of as-electroplated and reflow bumps increase with the larger cia, while the aspect ratio of bump decreases. The nearest bumps may be touched by decreasing the bump pitch in order to obtain high-density bump. The touching between the nearest bumps occurs during the overplating procedure rather than the reflowing procedure because the mushroom diameter formed by overplating is larger than the reflow-bump diameter. The arrangement as zig-zag rows can be effective for realizing the flip-chip-interconnect bump with both high-density and high-aspect ratio.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.3 s.36
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• pp.197-205
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• 2005

Development of the packaging is one of the critical issues for commercialization of the RF-MEMS devices. RF MEMS package should be designed to have small size, hermetic protection, good RF performance and high reliability. In addition, packaging should be conducted at sufficiently low temperature. In this paper, a low temperature hermetic wafer level packaging scheme for the RF-MEMS devices is presented. For hermetic sealing, Au-Sn eutectic bonding technology at the temperature below $300{\times}C$ is used. Au-Sn multilayer metallization with a square loop of $70{\mu}m$ in width is performed. The electrical feed-through is achieved by the vertical through-hole via filled with electroplated Cu. The size of the MEMS Package is $1mm\times1mm\times700{\mu}m$. By applying $O_2$ plasma ashing and fabrication process optimization, we can achieve the void-free structure within the bonding interface as well as via hole. The shear strength and hermeticity of the package satisfy the requirements of MIL-STD-883F. Any organic gases or contamination are not observed inside the package. The total insertion loss for the packaging is 0.075 dB at 2 GHz. Furthermore, the robustness of the package is demonstrated by observing no performance degradation and physical damage of the package after several reliability tests.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.102-102
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• 2018

Electronic industry had required the finer size and the higher performance of the device. Therefore, 3-D die stacking technology such as TSV (through silicon via) and micro-bump had been used. Moreover, by the development of the 3-D die stacking technology, 3-D structure such as chip to chip (c2c) and chip to wafer (c2w) had become practicable. These technologies led to the appearance of HBM (high bandwidth memory). HBM was type of the memory, which is composed of several stacked layers of the memory chips. Each memory chips were connected by TSV and micro-bump. Thus, HBM had lower RC delay and higher performance of data processing than the conventional memory. Moreover, due to the development of the IT industry such as, AI (artificial intelligence), IOT (internet of things), and VR (virtual reality), the lower pitch size and the higher density were required to micro-electronics. Particularly, to obtain the fine pitch, some of the method such as copper pillar, nickel diffusion barrier, and tin-silver or tin-silver-copper based bump had been utillized. TCB (thermal compression bonding) and reflow process (thermal aging) were conventional method to bond between tin-silver or tin-silver-copper caps in the temperature range of 200 to 300 degrees. However, because of tin overflow which caused by higher operating temperature than melting point of Tin ($232^{\circ}C$), there would be the danger of bump bridge failure in fine-pitch bonding. Furthermore, regulating the phase of IMC (intermetallic compound) which was located between nickel diffusion barrier and bump, had a lot of problems. For example, an excess of kirkendall void which provides site of brittle fracture occurs at IMC layer after reflow process. The essential solution to reduce the difficulty of bump bonding process is copper to copper direct bonding below $300^{\circ}C$. In this study, in order to improve the problem of bump bonding process, copper to copper direct bonding was performed below $300^{\circ}C$. The driving force of bonding was the self-annealing properties of electrodeposited Cu with high defect density. The self-annealing property originated in high defect density and non-equilibrium grain boundaries at the triple junction. The electrodeposited Cu at high current density and low bath temperature was fabricated by electroplating on copper deposited silicon wafer. The copper-copper bonding experiments was conducted using thermal pressing machine. The condition of investigation such as thermal parameter and pressure parameter were varied to acquire proper bonded specimens. The bonded interface was characterized by SEM (scanning electron microscope) and OM (optical microscope). The density of grain boundary and defects were examined by TEM (transmission electron microscopy).