• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.2
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• pp.106-112
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• 2007

Advanced back-end processing requires the integration of low-k dielectrics and Cu. However, in the presence of an electric field and a temperature, positive Cu ions may drift rapidly through dielectric and causing reliability problems. Therefore, in this paper, Cu+ drift diffusion in two low-k materials and silicon oxide is evaluated. The drift diffusion is investigated by measuring shifts in the flat band voltage of capacitance-voltage measurements on Cu gate capacitors after bias thermal stressing. The Cu+ drift late in $SiO_{x}C_{y}\;(2.85{\pm}0.03)$ and Polyimide(2.7${\leq}k{\leq}3.0$) is Considerably lower than in thermal oxide.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.179-179
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• 2011

관통전극(TSV, Trough Silicon Via) 기술은 전자부품의 소형화, 고성능화, 생산성 향상을 이룰 수 있는 기술이다. Cu는 현재 배선 기술에 적용되고 있고 전기적 저항이 낮아서 TSV filling 재료로 사용된다. 하지만 확산 방지막에 의해 완벽히 감싸지지 않는다면, Cu+은 빠르게 절연막을 통과하여 Si 웨이퍼로 확산된다. 이런 현상은 절연막의 누설과 소자의 오동작 등의 신뢰성 문제를 일으킬 수 있다. 현재 TSV의 제조와 열 및 기계적 응력에 관한 연구는 활발히 진행되고 있으나 Biased-Thermal Stress(BTS) 조건하의 Cu 확산에 관한 연구는 활발하지 않는 것이 실정이다. 이를 위해 본 연구에서는 TSV용 Cu 확산 방지막 Ti에 대해 Cu+의 drift 억제 특성을 조사하였다. 실험을 위해 Cu/확산 방지막/Thermal oxide/n-type Si의 평판 구조를 제작하였고 확산 방지막의 두께에 따른 영향을 조사하기 위해 Ti의 두께를 10 nm에서 100 nm까지 변화하였으며 기존 Cu 배선 공정에서 사용되는 확산 방지막 Ta와 비교하였다. 그리고 Cu+의 drift 측정을 위해 Biased-Thermal Stress 조건(Thermal stress: $275^{\circ}C$, Bias stress: +2MV/cm)에서 Capacitance 및 Timedependent dielectric breakdown(TDDB)를 측정하였다. 그 결과 Time-To Failure(TTF)를 이용하여 Cu+의 drift를 측정할 수 있었으며, 확산 방지막의 두께가 증가할수록 TTF가 증가하였고 물질에 따라 TTF가 변화하였다. 따라서 평판 구조를 이용한 본 실험의 Cu+의 drift 측정 방법은 향후 TSV 구조에서도 적용 가능한 방법으로 생각된다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.137-140
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• 2003

Cu+ ions drift diffusion in different dielectric materials is evaluated. The diffusion is investigated by measuring shift in the flatband voltage of capacitance/voltage measurements on Cu gate capacitors after bias temperature stressing. At a field of 1.lMV/cm and temperature $200^{\circ}C$, $250^{\circ}C$, $300^{\circ}C$ for 1H, 2H, 5H. The Cu+ ions drift rate of polyimide$(2.8{\leq}k{\leq}3.2)$ is considerably lower than thermal oxide. Also Cu+ drift rate of polyimide is similar to PECVD oxide. But, polyimide film is even more resistant to Cu drift diffusion and thermal effect than Thermal oxide, PECVD oxide: This results got a comparative reference. The important conclusion is that polyimide film is strongly dielectric material by thermal effect and Cu drift diffusion.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.144-147
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• 2003

Cu+ ions drift diffusion in formal oxide film and SiOCH film for interlayer dielectric is evaluated. The diffusion is investigated by measuring shift in the flatband voltage of capacitance/voltage measurements on Cu gate capacitors after bias temperature stressing. At a field of 0.2MV/cm and temperature $200^{\circ}C,\;300^{\circ}C,\;400^{\circ}C,\;500^{\circ}C$ for 10min, 30min, 60min. The Cu+ ions drift rate of $SiOCH(k=2.85{\pm}0.03)$ film is considerable lower than termal oxide. As a result of the experiment, SiOCH film is higher than Thermal oxide film for Cu+ drift diffusion resistance. The important conclusion is that SiOCH film will solve a causing reliability problems aganist Cu+ drift diffuion in dielectric materials.

• Applied Microscopy
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• v.38 no.4
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• pp.383-386
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• 2008

In performing in situ heating transmission electron microscopy (TEM) for materials characterizations, arising concerns such as specimen drifts and unintentional Cu contamination are discussed. In particular, we analysed the thermal and mechanical characteristics of in situ heating holders to estimate thermal drift phenomena. From the experimental results, we suggest an empirical model to describe the thermal drift behavior so that we can design an effective plan for in situ heating experiment. Practical approaches to minimize several hindrances arisen from the experiment are proposed. We believe that our experimental recommendations will be useful for a microscopist fascinated with the powerful potential of in situ heating TEM.

• Journal of the Korean Geophysical Society
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• v.5 no.1
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• pp.9-18
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• 2002

We performed a long-term monitoring of self-potential(SP) using the Cu-CuSO₄non-polarizable electrode and copper-clad electrodes(CCE) in a test site in order to analyze the effects of surrounding environmental noises such as temperature, rainfall and soil moisture content on the electrodes. Analysis of the temperature dependence of the non-polarizable electrodes showed that is temperature coefficient was about +0.5 mV/°Fwhen its end was exposed to atmosphere while it was less than +0.5 mV/℃ when submerged into the subsurface, which reflects that there exists an 8 to 11 hour lag between temperatures at the depth of 15 cm and atmosphere. CCE was independent of atmospheric temperature in subsurface but showed temperature coefficient of 1.0 mV/℃ when exposed to atmosphere. Drifts of 1 to 2 mV recorded with the non-polarizable electrode directly related to the soil moisture content when it was buried in subsurface. Drift with CCE also showed similar trend to the soil moisture content, and 5 mV drift was recorded according to 5% of daily variation. The soil moisture content had strong effects on the measurement with CCE in rainfall since the flow potential is generated on the surface of the electrode.

• Journal of the Microelectronics and Packaging Society
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• v.11 no.3 s.32
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• pp.9-15
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• 2004

We investigated the electrical properties of copolymer low-k materials that are compromised of the PMSSQ(Poly Methyl Silsesquioxane)-based matrix with the BTMSE (Bis Tri Methoxy Silyl Ethane) additives. We manufactured MIS-type test samples using the copolymer as the insulator and measured their leakage current and failure time by means of the BTS (bias-temperature-stress) test. The failure time was observed to decrease drastically when the porosity of the copolymer was increased over $30\%$. From the measurement of failure time with respect to temperature. the activation energy of Cu drift through the copolymer was calculated to be 1.51 eV.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.4
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• pp.111-115
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• 2014

Effect of dynamic electric fields on dielectric breakdown behavior in Cu damascene interconnects was investigated. Among the DC, unipolar, and bipolar pulse conditions, the longest dielectric lifetime is observed under the bipolar condition because backward Cu ion drift occurs when the direction of electric field is changed by 180 degrees and Cu contamination is prohibited as a results. Under the unipolar pulse condition, the dielectric lifetime increases as pulse frequency increases and it exceed the lifetime under DC condition. It suggests that the intrinsic breakdown of dielectrics significantly affect the dielectric breakdown in addition to Cu contamination. As the unipolar pulse width decreases, dielectric bond breakdown is more difficult to occur.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.2
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• pp.23-29
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• 2014

Less power consumption, lower cost, smaller size and more functionality are the increasing demands for consumer electronic devices. The three dimensional(3-D) TSV packaging technology is the potential solution to meet this requirement because it can supply short vertical interconnects and high input/output(I/O) counts. Cu(Copper) has usually been chosen to fill the TSV because of its high conductivity, low cost and good compatibility with the multilayer interconnects process. However, the CTE mismatch and Cu ion drift under thermal stress can raise reliability issues. This study discribe the thermal stress reliability trend for successful implementation of 3-D packaging.

• Environmental Sciences Bulletin of The Korean Environmental Sciences Society
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• v.1 no.1
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• pp.1-9
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• 1997

We investigated the depth profiles of heavy metals in the surface sediments at Heedong reservoir in Pusan. Sampling was done at the intervals of 50 m of drift along the water channel into the reservoir. All samples were analyzed with an ICP-AES. We determined the content of Zn, Pb, Cd, Mn, Cu, Cr, and Fe. The overall mean content of these heavy metals were observed to $(2.9\pm1.2){\times}10^{-3},\;(1.3\pm0.7){\times}10^{-3},$ $(1.9\pm2.1){\times}10^{-4},$ $(2.3\pm1.1){\times}10^{-2},\;(1.6\pm1.0){\times}10^{-3},\;and\;(4.5\pm2.6){\times}10^{-4}$ ppm/ppmFe, respectively excluding iron data. Mean contents of Cu show an increasing trend toward the surface of sediments, while those of Cd show a decreasing trend, and those of Pb and Cr are relatively stable. Comparing with the contents of heavy metals in soils at two sites of Kumjeong mountain, enrichment factors of heavy metals in the surface sediments were determined. Among heavy metals we investigated, copper showed the largest value of enrichment factor. Considering the maximum content of heavy metals in the surface sediment, the values of enrichment factors of Cu, Cd and Cr were significant, which were 22, 8.1 and 4.0, respectively. In leaching experiment, it appeared that Pb, Cd, Cr, and Fe in sediments were hardly leached out into water, We also examined the effect of pH on the content of heavy metals.