• Korean Chemical Engineering Research
• /
• 제50권5호
• /
• pp.933-937
• /
• 2012

본 연구에서는 환경오염을 발생시키는 주요한 중금속 물질의 하나인 구리를 상대적으로 쉽게 검출하기 위해, CNT 전극 및 벗김전압전류법을 이용하여 구리 금속의 감도 향상을 위한 최적조건 및 민감도를 평가하였다. 또한 구리의 벗김반응이 발생될 때의 반응 메카니즘에 대한 연구도 수행하였다. 이를 위해, 네모파 벗김전압전류법 및 선형주사 전압 전류법등의 전기화학적 분석법이 이용되었다. 평가 결과, 네모파 벗김전압전류법의 최적조건으로, 15 mV의 네모파증폭율, 60 Hz의 주파수, -1.0V vs. Ag/AgCl의 석출전위 및 200초의 석출시간이 결정되었다. 구리 금속의 민감도를 측정한 결과 $1.824{\mu}A/{\mu}M$의 민감도를 얻을 수 있었다. 선형주사 전압전류법을 이용하여 구리의 벗김반응에 영향을 끼치는 인자를 평가하였을 때, 확산반응 보다는 표면반응이 구리의 벗김반응 성능에 영향을 끼치는 것으로 측정되었다. 이러한 전기화학적 분석 결과가 다른 참고문헌들과 비교되어졌고, 구리금속의 민감도 측면에서 본 연구에서 제안한 CNT 전극의 우수함이 입증되었다.

• 마이크로전자및패키징학회지
• /
• 제30권2호
• /
• pp.52-59
• /
• 2023

팬 아웃 웨이퍼 레벨 패키지의 Cu 재배선층 적용을 위해 Ti 확산방지층과 폴리벤즈옥사졸(polybenzoxazole, PBO) 절연층 사이의 계면 신뢰성을 평가하였다. PBO 경화 온도 및 고온/고습 시간에 따라 4점 굽힘 시험으로 정량적인 계면접착에너지를 평가하였고, 박리계면을 분석하였다. 175, 200, 및 225℃의 세 가지 PBO 경화 온도에 따른 계면접착에너지는 각각 16.63, 25.95, 16.58 J/m² 로 200℃의 경화 온도에서 가장 높은 값을 보였다. 박리표면에 대한 X-선 광전자 분광분석 결과, 200℃에서 PBO 표면의 C-O 결합의 분율이 가장 높으므로, M-O-C 결합이 Ti/PBO 계면접착 기구와 연관성이 높은 것으로 판단된다. 200℃에서 경화된 시편을 85℃/85% 상대 습도에서 500시간 동안 고온/고습 처리 하는 동안 계면접착에너지는 3 .99 J/m²까지 크게 감소하였다. 이는 고온/고습 처리동안 Ti/PBO 계면으로의 지속적인 수분 침투로 인해 계면 근처 PBO의 화학결합이 약해져서 weak boundary layer를 형성하기 때문으로 판단된다.

• 자원환경지질
• /
• 제40권5호
• /
• pp.587-604
• /
• 2007

회동저수지의 호저퇴적물에 대하여 미량원소의 심도별 변화와 존재형태 및 이들의 상관관계에 대해서 알아보고자 하였다. 회동저수지의 5개 지점에서 깊이 21-41cm의 코어와 간극수를 채취하였다. 회동저수지 퇴적물 내 미량원소의 평균 총함량은 Zn $232{\pm}30.8mg/kg$, Cu $119{\pm}272mg/kg$, Pb $58.4{\pm}4.1mg/kg$, Ni $15.7{\pm}3.3mg/kg$ 및 Cd $1.6{\pm}0.3mg/kg$이었다. 회동저수지 안쪽으로 가면서 호저퇴적물 내 미량원소 함량이 감소하는 경향이 관찰되었다. 깊이에 따른 함량 변화는 시료채취 위치에 상관없이 Mn, Pb 및 Zn는 감소하는 반면, Cu와 Fe는 증가하였다. 간극수에 용해된 미량원소의 함량은 Fe>Mn>Cu>Zn의 순으로 낮았고 Cd, Ni 및 Pb는 검출되지 않았다. 간극수에 용해된 Zn, Cu, Fe 및 Mn 함량은 퇴적층의 하부로 가면서 증가하는 경향을 보여주고 있으며, 이는 상부로 미량원소가 확산되고 있음을 의미한다. 이러한 미량원소의 이동은 퇴적물-물과의 경계부분까지 전달될 것이며, 퇴적층 상부에서 비정질 철 및 망간 산화광물과 탄산염광물에 의하여 흡착되고 있다. 겉보기 분산계수 값을 이용한 결과, 각 미량원소의 상대적인 이동도는 Mn>Cu>Zn>Fe순이다. 연속추출결과, 미량원소의 표면집적이 비정질 산화광물형태와 탄산염광물 수반형태에 기인된 것임을 확인하였다. Cu, Fe, Mn 및 Zn의 간극수 내 함량은 호저퇴적물의 양이온교환형태와 밀접한 상관관계가 있음이 관찰되었다.

• 한국결정학회지
• /
• 제16권2호
• /
• pp.89-101
• /
• 2005

Among many material processing related issues for successful scaling down of devices for the next 10 years or so, the advanced gate stack and interconnect technology are two most critical research areas, which need technical innovation. The introduction of new metallic films and appropriate processing technologies are required more than ever. Especially, as the device downscaling continues well into sub 50 nm regime, the paradigm for metal nano film deposition technique research has been shifted to high conformality, low growth temperature, high quality with uniformity at large area wafers. Regarding these, ALD has sparked a lot of interests for a number of reasons. The process is intrinsically atomic in nature, resulting in the controlled deposition of films in sub-monolayer units with excellent conformality. In this paper, the overview on the current issues and the future trends in device processing technologies related to metal nano films as well as the R&D trends in these applications will be discussed. The focus will be on the applications for metal gate, capacitor electrode for DRAM, and diffusion barriers/seed layers for Cu interconnect technology.

• 한국초전도저온공학회:학술대회논문집
• /
• 한국초전도저온공학회 2002년도 학술대회 논문집
• /
• pp.17-19
• /
• 2002

Melt textured YBCO superconductors were fabricated by the top seeding method using Sml.8($Sm_{1.8}$ $Ba_{2.4}$ $Cu_{3.4}$$O_{7-Y}$) seed. We investigated the twin structures using the optical microscope, SEM and TEM. The twin structures formed during the tetragonal to orthorhombic transition which occurred at $450^{\circ}C$ in sample oxygen annealing. The twin structures were clearly observed by SEM due to the chemical etching effects. The lengths of twin structures were increased as the oxygenation heat treatment time increased from 1hr to 10hr. We investigated twin structure by TEM. The twin spaces were considered to be related to the oxygen contents. The results suggested an oxygen diffusion model for the formation of the twin lengths.

• Environmental Engineering Research
• /
• 제13권2호
• /
• pp.79-84
• /
• 2008

Adsorption of heavy metals by sawdust was investigated to evaluate the effectiveness of using sawdust to remove heavy metals from aqueous solutions. Kinetic and isotherm studies were carried out by considering the effects of initial concentration and pH. The adsorption isotherms of heavy metals fitted the Langmuir or Freundlich model reasonably well. The adsorption capacity of metal was in the order $Pb^{2+}$ > $Cu^{2+}$ > $Zn^{2+}$. A high concentration of co-existing ions such as $Ca^{2+}$ and $Mg^{2+}$ depressed the adsorption of heavy metal. Adsorption data showed that metal adsorption on sawdust follows a pseudo-second-order reaction. Kinetic studies also indicated that both surface adsorption and intraparticle diffusion were involved in metal adsorption on sawdust. Column studies prove that sawdust could be effective biosorbent for the removal of heavy metals from aqueous phase.

• 한국표면공학회지
• /
• 제34권6호
• /
• pp.568-574
• /
• 2001

Mixed powders of Fe + 0.7% C, Fe + 0.7% C + 1.6% Cu, and Fe + 0.7% C + 0.3% MnS were pressed in a mold so that the green-compact densities were 6.3, 6.5, 6.7, and 6.9 g/㎤, respectively. Then, the compacts were sintered at $1125^{\circ}C$ for 30 minutes and subsequently steam treated at $600^{\circ}C$ for 60 minutes. From the results, it was found that the overall properties of the steam-treated compacts, such as the weight gain of the sintered compacts, the diffusion of oxides into the sintered compacts, the surface hardness, and the formation of surface oxide layer, were primarily influenced by the density of the compacts and the oxides that were formed on the surface of the compacts by the steam treatment.

• 한국분말재료학회지
• /
• 제11권1호
• /
• pp.69-73
• /
• 2004

The sintering characteristics of commercial 7xxx series Al-Zn-Mg-Cu alloy have been investigated. Sintering system of this blended elemental powder has aspects of both transient and supersolidus liquid phase sintering. Transient liquids occur when the constitution point during sintering lies in a solid phase region but where the sintering temperature is greater than either the melting point of one of the constituent or a eutectic temperature. Supersolidus liquid phase sintering occurs when a preblended powder is heated to a temperature between the solidus and liquids. However, these reaction were restrained their inter diffusion due to the appearance of the oxide film. Thus, 7xxx series Al alloy is extremely sensitive to process variables, including particle size, holding time and sintering temperature. Therefore, above phenomenons were observed formation and behaviour of the liquid by using SEM and DSC.

• 한국유체기계학회 논문집
• /
• 제11권4호
• /
• pp.7-13
• /
• 2008

The computational investigation is performed to find out the interaction of arc plasmas with surrounding materials and the thermal flow characteristics in a PASB (Puffer-Assisted Self-Blast) chamber, which is one of new breaking concepts in $SF_6$ switchgears. It is very important to define the flow and mass transfer happened during the full arcing history for further understanding complex physics inside the chamber. In this study, we have considered two diffusion processes by the hot arc plasma, one is PTFE nozzle ablation and the other is Cu electrode evaporation, simultaneously. It was found that the principle of the pressure-rise inside the chamber is confirmed by the computational results and the increase of the electrical conductivity of the residual gas near current zero is critical to the chamber design.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
• /
• pp.747-751
• /
• 2006

The hydrogenated amorphous silicon thin film transistor (a-Si:H TFT) with copper as source and drain electrode has been fabricated to obtain its transfer characteristics and stressed with positive and negative bias to investigate the instability variation comparing to conventional MoW-Al based TFT device. The results show that there is no copper diffusion into active layer of a-Si:H TFT, even during the thermal process. In addition, a 15-inch XGA a Si:H TFT LCD display utilizing Cu as gate electrodes has been developed.