• Journal of Magnetics
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• 제21권1호
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• pp.51-56
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• 2016

The microstructure and magnetic properties of HDDR-treated powders after grain boundary diffusion process (GBDP) with Nd-Cu alloy at different temperatures have been studied. The variation of GBDP temperature had multifaceted influences on the HDDR-treated powders involving the microstructure, phase composition and magnetic performance. An enhanced coercivity of 16.9 kOe was obtained after GBDP at $700^{\circ}C$, due to the modified grain boundary with fine and continuous Nd-rich phase. However, GBDP at lower or higher temperature resulted in poor magnetic properties because of insufficient microstructural modification. Especially, the residual hydrogen induced phenomenon during GBDP strongly depended on the GBDP temperature.

• 한국대기환경학회지
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• 제6권2호
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• pp.161-167
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• 1990

The reaction of sulfur dioxide with cupric oxide supported on zeolite was investigated over a temperature range of $250{\sim}450^{{\circ}C$. After the completion of the $SO_2$ removal reaction, the cupric sulfate produced was regenerated to copper by hydrogen or LPG. The experimental results showed that the removal efficiency of $SO_2$ was improved with temperature increase and with $SO_2$ inlet concentration decrease. The reaction of $SO_2$ with CuO/Zeolite was well explained by the shrinking unreacted core model using first order chemical reaction control and diffusion control. THe reaction rate constant and the effective diffusivity were respectively as follows: 1k (cm/s) = 2.519 exp[-10991 (cal/mol)/RT] $De(cm^2/s) = 2.06 \times 10^{-5} exp[-8380 (cal/mol)/RT]$

• 한국자기학회지
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• 제5권5호
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• pp.511-514
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• 1995

The crystallization kinetics of $Fe_{73.5}Si_{13.5}B_{9}Cu_{1}Nb_{3}$ amorphous alloy has been investigated using differential scanning calorimetry (DSC). The crystallization process had two stages, i.e. precipitation of the $\alpha$-Fe(Si) solid solution and the tetragonal borides. The isothermal transformation data of the amorphous alloy has been fitted successfully to the generalized Johnson-Mehl-Avrami equation. The mean time exponent, n, obtained is close to 2.5. The value of n=2.5 may be interpreted as being due to a diffusion-controlled transformation process with a constant nucleation rate, one likely transformation mode for the crystallization of metallic amorphous alloys. The activation energy of the overall crystallization process deduced from the time to 50% crystallization are about 81 kcal/mole. The value is of the same order as those estimated from viscous flow.

• 마이크로전자및패키징학회지
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• 제12권4호통권37호
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• pp.307-313
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• 2005

선형구조의 시편을 사용하여 Sn96.5Ag3.0Cu0.5의 electromigration 특성을 살펴보고 공정 조성의 SnPb의 electromigration특성과 비교, 분석하였다. SnAgCu의 electromigration에 관한 특성 중 시간에 따른 물질의 이동 양상과 여러 가지 electromigration 매개변수 (활성화 에너지, 임계 전류밀도, 확산계수와 유효전하수의 곱)을 살펴보았다. 임계 전류 밀도는 $140^{\circ}C$에서 $2.38{\times}10^4A/cm^2$ 이고 이 값은 $140^{\circ}C$에서 electromigration에 의한 물질 이동이 발생하지 않는 최대 전류 밀도를 나타낸다. 활성화 에너지는 $110-160^{\circ}C$ 온도 범위에서 0.56 eV가 측정되었다. DZ$\ast$의 값은 $110^{\circ}C$에서 $3.12{\times}10^{-10}\;cm^2/s$, $125^{\circ}C$에서 $4.66{\times}10^{-10}\;cm^2/s$, $140^{\circ}C$에서 $8.76{\times}10^{-10}\;cm^2/s$, $160^{\circ}C$에서 $2.14{\times}10^{-9}cm^2/s$ 이었다. 그리고 SnAgCu와 공정 조성의 SnPb 물질의 electromigration 거동 특징은 크게 다른데, SnPb의 경우 음극에서 보이드(void) 형성이 발생하기 전에 잠복 시간이 존재하고 SnAgCu의 경우 잠복 시간이 존재하지 않는다는 점이다. 이는 각 원소들의 확산 기구(diffusion mechanism)의 차이에 기인한 것이라 생각된다.

• 한국세라믹학회지
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• 제51권5호
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• pp.477-480
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• 2014

An $Al_2O_3$-CuO-ZnO (ACZ) precursor powder was synthesized by a facial sol-gel process using a nonionic surfactant span 80 as the chelating agent to improve the surface area and morphology. When creating a hydrogen membrane, several kinds of properties are required, such as easy dissociation of hydrogen molecules, fast hydrogen diffusion, high hydrogen solubility, and resistance to hydrogen embrittlement. ACZ-Ni composite membranes (cermet) were prepared with this precursor and pure Ni powder via the hot press sintering (HPS) method. The ACZ powder was characterized by XRD, BET, and FE-SEM. Hydrogen permeation experiments were performed by Sievert's type of hydrogen permeation membrane equipment. The hydrogen permeability of ACZ/Ni 10 wt% and ACZ/Ni 20 wt% was obtained as 7.2 and $10molm^{-2}s^{-1}$ at RT, respectively. These values of the corresponding membranes were slightly increased with increasing pressures.

• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2002년도 Proceedings of the International Welding/Joining Conference-Korea
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• pp.475-480
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• 2002

The reliability of the solder joint is affected by type and extent of the interfacial reaction between solder and substrates. Therefore, understanding of intermetallic compounds produced by soldering in electronic packaging is essential. In-based alloys have been favored bonding devices that demand low soldering temperatures. For photonic and fiber optics packaging, m-based solders have become increasingly attractive as a soldering material candidate due to its ductility. In the present work, the interfacial reactions between indium solder and bare Cu Substrate are investigated. For the identification of intermetallic compounds, both Scanning Electron Microscopy(SEM) and X-Ray Diffraction(XRD) were employed. Experimental results showed that the intermetallic compounds, such as Cu$_{11}$In$_{9}$ was observed for bare Cu substrate. Additionally, the growth rate of these intermetallic compounds was increased with the reaction temperature and time. We found that the growth of the intermetallic compound follows the parabolic law, which indicates that the growth is diffusion-controlled.d.

• 한국진공학회지
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• 제4권2호
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• pp.194-200
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• 1995

2-3nm의 공간분해능을 갖는 전자에너지손실분광법(Electron Energy Loss Spectroscopy, EELS)을 이용하여, 전기적 특성조사된 YBa2Cu3O7-$\delta$ 고온초전도체 쌍결정의 결정경계(grain boundary)에서 산소의 조성변화를 조사하였다. Misorientation angle이 $14^{\circ}$, $28^{\circ}$,$ 30^{\circ}$인 3개의 쌍결정 중에서 Josephson junction 특성을 보인 $28^{\circ}$ 및 $30^{\circ}$결정경계에서의 oxygen 1s absorption edge는 결정내부에서의 oxygen 1s absorption edge와 매우 다름을 알 수 있었다. 이는 결정경계에서의 산소조성이 결정내부에 비해 낮음을 의미하며, 그 영역이 결정경계 부근 20-40nm로, coherence length에 비해 큼을 알 수 있다. 반면에, flux pinningxmr성을 보인 $14^{\circ}$결정경계에서의 oxygen 1s absorption edge는 결정내부에서와 별 차이를 보이지 않았다. 따라서 일반적으로 관찰되어온, misorientation angle이 큰 결정경계에서의 Josephson junction 특성은 결정경계 부근에서 산소의 조성이 낮아지는데에 기인하며, 그 원인은 결정경계면을 통해 산소가 out-diffusion되기 때문인 것으로 생각된다.

• Mycobiology
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• 제36권4호
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• pp.260-265
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• 2008

Cyclic voltammetric measurements were performed for Co(II), Ni(II), Cu(II) and Zn(II) complexes of 1 : 1 alternating copolymer, poly(3-nitrobenzylidene-1-naphthylamine-co-succinic anhydride) (L) and Ni(II) and Cu(II) complexes of 1 : 1 alternating copolymer, poly(3-nitrobenzylidene-1-naphthylamine-co-methacrylic acid) ($L^1$). The in vitro biological screening effects of the investigated compounds were tested against the fungal species including Aspergillus niger, Rhizopus stolonifer, Aspergillus flavus, Rhizoctonia bataicola and Candida albicans and bacterial species including Staphylococcus aureus, Escherichia coli, Klebsiella pneumaniae, Proteus vulgaris and Pseudomonas aeruginosa by well diffusion method. A comparative study of inhibition values of the copolymers and their complexes indicates that the complexes exhibit higher antimicrobial activity. Copper ions are proven to be essential for the growth-inhibitor effect. The extent of inhibition appeared to be strongly dependent on the initial cell density and on the growth medium. The nuclease activity of the above metal complexes were assessed by gel electrophoresis assay and the results show that the copper complexes can cleave pUC18 DNA effectively in presence of hydrogen peroxide compared to other metal complexes. The degradation experiments using Rhodamine B dye indicate that the hydroxyl radical species are involved in the DNA cleavage reactions.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.156-157
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• 2008

반도체 소자 회로의 집적도가 높아짐에 따라 선폭이 감소하였고 고온 공정이 필요하게 되었다. 기존의 반도체 회로 배선 재료인 Al을 사용할 경우 소자의 속도가 느려져서 소자의 신뢰도가 떨어지고 고온공정에서의 문제가 발생되어 이를 해결하기 위한 차세대 배선 물질로 비저항이 낮은 Cu의 사용이 요구되고 있다. 하지만 Cu는 Si와의 확산이 잘 일어나기 때문에 그 사이에서 확산을 막아주는 확산방지막에 대한 필요성이 제기되었고 연구가 활발히 진행되고 있다. 본 논문에서는 Cu와 Si사이의 확산을 방지하기 위한 W-C-N 확산방지막을 물리적 기상 증착법(PVD)중 하나인 RF Magnetron Sputtering 방식을 사용하여 증착하였다. 고온 공정에서의 안정성을 알아보기 위해 $600^{\circ}C$ 부터 $900^{\circ}C$ 까지 $100^{\circ}C$ 단위로 열처리를 하였고 4-point probe 장치를 사용하여 열처리 온도에 따른 비저항 측정을 통해 W-C-N 확산방지막의 특성을 분석하였다.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2002년도 추계학술대회 발표 논문집
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• pp.14-19
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• 2002

In this study, as Cu diffusion barrier, tantalum nitrides were successfully deposited on Si(100) substrate and SiO2 by plasma assisted atomic layer deposition(PAALD) and thermal ALD, using pentakis (ethylmethlyamino) tantalum (PEMAT) and $NH_3$ as precursors. The TaN films were deposited on $250^{\circ}$C by both method. The growth rates of TaN films were $0.8{\AA}$/cycle for PAALD and $0.75{\AA}$/cycle for thermal ALD. TaN films by PAALD showed good surface morphology and excellent step coverage for the trench with an aspect ratio of h/w - $1.8 : 0.12 \mu\textrm{m}$ but TaN films by thermal ALD showed bad step coverage for the same trench. The density for PAALD TaN was $11g/\textrm{cm}^3$ and one for thermal ALD TaN was $8.3g/\textrm{cm}^3$. TaN films had 3 atomic % carbon impurity and 4 atomic % oxygen impurity for PAALD and 12 atomic % carbon impurity and 9 atomic % oxygen impurity for thermal ALD. The barrier failure for Cu(200nm)/TaN(l0nm)/$SiO_2(85nm)$/Si structure was shown at temperature above $700^{\circ}$C by XRD, Cu etch pit analysis.