• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2005.05a
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• pp.233-236
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• 2005

Rotor in small-medium induction motor has been usually manufactured by aluminum diecasting. In order to improve efficiency of induction motors, newly developed Cu-Ca alloys have been investigated. The electrical conductivity in the Cu alloys containing Ca less than $1.0wt\%$ was higher than $80\%$ IACS. Cu-Ca alloy is desirable for the thixoforming process because it has wide semi-solid range over $150^{\circ}C$. In this study, Cu-rotor with thixoforming process was developed to replace the conventional aluminum diecasting rotor. Analysis microstructure of thixoforming rotor. effect of incomplete filling defect on the efficiency of induction motor was discussed.

• Journal of the Korean Vacuum Society
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• v.9 no.3
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• pp.267-272
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• 2000

Electroplating Cu was deposited on Si(100) wafer after seed Cu was deposited by sputtering first. TaN was deposited as a diffusion barrier before depositing the seed Cu. Electroplating Cu thin films show highly (111)-oriented microstructure for both before and after annealing at $450^{\circ}C$ for 30min and no copper silicide was detected in the same samples, which indicates that TaN barrier layer blocks well the Cu diffusion into silicon substrate. After annealing the electroplating Cu film up to $450^{\circ}C$, the Cu film became columnar from non-columnar, its grain size became larger about two times, and also defects density of stacking faults, twins and dislocations decreased greatly. Thus the heat treatment will improve significantly electromigration property caused by the grain boundary in the Cu thin films.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.15-15
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• 2018

• Proceedings of the KIEE Conference
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• 2005.10b
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• pp.273-275
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• 2005

Active thermography is being used since several years for remote non-destructive testing. It provides thermal images for remote detection and imaging of damages. Also, it is based on propagation and reflection of thermal waves which are launched from the surface into the inspected component by absorption of modulated radiation. For energy deposition, it use external heat sources (e.g., halogen lamp or convective heating) or internal heat generation (e.g., microwaves, eddy current, or elastic wave). Among the external heat sources, the ultrasound is generally used for energy deposition because of defect selective heating up. The heat source generating a thermal wave is provided by the defect itself due to the attenuation of amplitude modulated ultrasound. A defect causes locally enhanced losses and consequently selective heating up. Therefore amplitude modulation of the injected ultrasonic wave turns a defect into a thermal wave transmitter whose signal is detected at the surface by thermal infrared camera. This way ultrasound thermography(UT) allows for selective defect detection which enhances the probability of defect detection in the presence of complicated intact structures. In this paper the applicability of UT for fast defect detection is described. Examples are presented showing the detection of defects in PCB material. Measurements were performed on various kinds of typical defects in PCB materials (both Cu metal and non-metal epoxy). The obtained thermal image reveals area of defect in row of thick epoxy material and PCB.

• Journal of the Korean Society for Nondestructive Testing
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• v.30 no.2
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• pp.91-97
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• 2010

This paper proposes method to evaluate the location and size of the internal defects of metallic specimens by the shearing phase lock-in infrared thermography. Until now, infrared thermography test for metal specimen of STS304 and Cu-Zn were conducted to find the best test conditions. However, In unspecified situation of the form and existence of defects, there was a disadvantage to takes a long time for finding the optimal experimental conditions. The defect detection and evaluation was performed at 60 MHz signal using lock-in and shearing-phase method under limited heating conditions. By shearing-phase distribution method, Defects for the maximum, minimum and zero points were quantitatively detected at the size and location of the subsurface. As results, application of the proposed technique was verified for STS304 and Cu7-Zn3 with artificial defect and factors affected defect evaluation were searched and analyzed.

• Journal of the Microelectronics and Packaging Society
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• v.24 no.4
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• pp.65-71
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• 2017

To prepare the Cu-based filler material indicating enhanced oxidation resistance property and Ag content, Ag-coated Cu particles was fabricated by Ag plating of 40 wt % on the spherical Cu particles with an average size of $2{\mu}m$ and their oxidation behavior was also evaluated. In the case that ethylenediaminetetraacetic acid was used alone, the fabricated particles frequently showed broken structures such as delamination at Ag shell/core Cu interface and hollow structure that are induced by excessive galvanic displacement reaction. As a result, fraction of defect particles increased up to 19.88% after the Ag plating of 40 wt.%. However, the fraction in the 40 wt.% Ag-coated Cu particles decreased to 9.01% and relatively smooth surface and dense microstructure in the Ag shell were also observed with additional usage of hydroquinone as a complexing agent. Ag-coated Cu particles having the enhanced microstructure did not show any weight increase by oxidation for exposure to air at $160^{\circ}C$ for 2 h, indicating increased oxidation resistance property.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.152-153
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• 2007

$CuInSe_2$ single crystal thin film was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. After the as-grown $CuInSe_2$ single crystal thin films was annealed in Cu-, Se-, and In-atmospheres, the origin of point defects of $CuInSe_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{Cu}$, $V_{Se}$, $Cu_{lnt}$, and $Se_{lnt}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Cu-atmosphere converted $CuInSe_2$ single crystal thin films to an optical n-type. Also, we confirmed that In in $CuInSe_2$/GaAs did not form the native defects because In in $CuInSe_2$ single crystal thin films existed in the form of stable bonds.

• Korean Journal of Materials Research
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• v.6 no.6
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• pp.626-631
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• 1996

Reactive dc magnetron sputtering 법을 이용하여 증착한 molybdenum mitride 박막의 Cu 확산 방지막 특성을 조사하였다. Cu 확산 방지막으로서 molybdenum nitride 박막의 열적안정성을 관찰하기 위하여 molybdenum nitride 박막 위에 Cu를 evaporation 법으로 증착하고 진공 열처리하였다. Cu/r-Mo2N/si 구조는 $600^{\circ}C$, 30분간 열처리 시까지 안정하였다. 확산 방지막의 파괴는 $650^{\circ}C$, 30분간 열처리 시부터 격자 확산(lattice diffusion)이나 입계(grain boundary)과 결함(defect)을 통한 확산에 의해 나타나기 시작하였고, 이 때 molybdenum silicide과 copper silicide의 형성에 기인된 것으로 생각되었다. 열처리 이후 Cu/r-Mo2N/Si 사이의 상호반응이 증가하였다. 이는 Rutherford backscattering spectrometry, Auger electron spectroscopy 그리고 Nomarski microscopy 등의 분석을 통해 조사되었다.

• Journal of Magnetics
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• v.17 no.3
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• pp.163-167
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• 2012

The effects on the ferromagnetism of the O or Zn defect in Cu-doped ZnO with the concentration of 2.77-8.33% have been investigated by the first-principles calculations. The Cu doping in ZnO was calculated to be a kind of p-type ferromagnetic half-metals. When the Zn vacancy exists in Cu-doped ZnO, the Cu magnetic moment increases, while for the O vacancy it is reduced. It is noticeable that the ferromagnetic state was originated from the hybridized O(2p)-Cu(3d)-O(2p) chain formed through the p-d coupling. The carrier-mediated ferromagnetism by nitrogen or fluorine does not depend on their concentration.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.100-101
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• 2008

To obtain the single crystal thin films, $CuGaSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $450^{\circ}C$, respectively. After the as-grown $CuGaSe_2$ single crystal thin films was annealed in Cu-, Se-, and Ga-atmospheres, the origin of point defects of $CuGaSe_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{CU}$, $V_{Se}$, $Cu_{int}$, and $Se_{int}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Cu-atmosphere converted $CuGaSe_2$ single crystal thin films to an optical n-type. Also, we confirmed that Ga in $CuGaSe_2$/GaAs did not form the native defects because Ga in $CuGaSe_2$ single crystal thin films existed in the form of stable bonds.