• Korean Journal of Metals and Materials
• /
• v.49 no.11
• /
• pp.905-909
• /
• 2011

The formation of front metal contact silicon solar cells is required for low cost, low contact resistance to silicon surfaces. One of the available front metal contacts is Ni/Cu plating, which can be mass produced via asimple and inexpensive process. A selective emitter, meanwhile, involves two different doping levels, with higher doping (${\leq}30{\Omega}/sq$) underneath the grid to achieve good ohmic contact and low doping between the grid in order to minimize the heavy doping effect in the emitter. This study describes the formation of a selective emitter and a nickel silicide seed layer for the front metallization of silicon cells. The contacts were thickened by a plated Ni/Cu two-step metallization process on front contacts. The experimental results showed that the Ni layer via SEM (Scanning Electron Microscopy) and EDX (Energy dispersive X-ray spectroscopy) analyses. Finally, a plated Ni/Cu contact solar cell displayed efficiency of 18.10% on a $2{\times}2cm^2$, Cz wafer.

• 한국신재생에너지학회:학술대회논문집
• /
• 2010.06a
• /
• pp.91.2-91.2
• /
• 2010

The use of plated front contact for metallization of silicon solar cell may alternative technologies as a screen printed and silver paste contact. This technologies should allow the formation of contact with low contact resistivity a high line conductivity and also reduction of shading losses. The better performance of Ni/Cu contacts is attributed to the reduced series resistance due to better contact conductivity of Ni with Si and subsequent electroplating of Cu on Ni. The ability to pattern narrower grid lines for reduced light shading combined with the lower resistance of a metal silicide contact and improved conductivity of plated deposit. This improves the FF as the series resistance is deduced. This is very much required in the case of low concentrator solar cells in which the series resistance is one of the important and dominant parameter that affect the cell performance. A selective emitter structure with highly dopes regions underneath the metal contacts, is widely known to be one of the most promising high-efficiency solution in solar cell processing. This paper using selective emitter structure technique, fabricated Ni/Cu plating metallization cell with a cell efficiency of 17.19%.

• Journal of the Microelectronics and Packaging Society
• /
• v.20 no.4
• /
• pp.17-23
• /
• 2013

As a basic research to develop stretchable electronic packaging technology, CNT-Ag composite pads were formed on top of Cu/Sn chip bumps and flip-chip bonded using anisotropic conductive adhesive. Average contact resistances of the flip-chip joints were measured with respect to bonding pressure and presence of the CNT-Ag composite pads. When Cu/Sn chip bumps with CNT-Ag composite pads were flip-chip bonded to substrate Cu pads at 25MPa or 50 MPa, contact resistance was too high to measure. The specimen processed by flip-chip bonding the Cu/Sn chip bumps with CNT-Ag composite pads to the substrate Cu pads exhibited an average contact resistance of $213m{\Omega}$. On the other hand, the flip-chip specimens processed by bonding Cu/Sn chip bumps without CNT-Ag composite pads to substrate Cu pads at 25MPa, 50MPa, and 100MPa exhibited average contact resistances of $370m{\Omega}$, $372m{\Omega}$, and $112m{\Omega}$, respectively.

• Current Photovoltaic Research
• /
• v.3 no.1
• /
• pp.10-15
• /
• 2015

Cu doping by copper or $Cu_2Te$ materials enhances p+ formation in CdTe near the back contact interface, allowing better formation of ohmic contact. However, the Cu in CdTe junction is also considered as a principal component of CdTe cell degradation. In this paper, Na-doped ZnTe layer was employed as a back contact material to improve the stability of CdTe solar cells. As a process variable, post $CdCl_2$ treatment of CdS/CdTe film was conducted before or after depositing ZnTe:Na on CdTe. The change of the photovoltaic properties of CdTe cells were investigated with aging time. Low-temperature photoluminescence analysis was conducted to describe the degradation mechanism. The result showed that the CdTe solar cells with better stability compare to Cu contact were achieved using an optimized ZnTe:Na back contact.

• Proceedings of the Korean Society for Technology of Plasticity Conference
• /
• 2003.10a
• /
• pp.251-254
• /
• 2003

In this study, main works are focused on investigating the stress distribution at the interface between a rotor core and Cu bar when a punch is applied into the body of Cu bar. A parametric study with dimensional changes of core slot was performed numerically to identify what factors are dominant in producing high contact forces in the interface. As analysis results, it was found that core slot length was a dominant factor in increasing contact force at the interface between a rotor core and Cu bar.

• Journal of the Microelectronics and Packaging Society
• /
• v.30 no.2
• /
• pp.60-64
• /
• 2023

In this study, the electrical contact resistance characteristics between graphene and metals, which is one of important factors for the performance of graphene-based devices, were compared. High-quality graphene was synthesized by chemical vapor deposition (CVD) method, and Al, Cu, Ni, and Ti as electrode materials were deposited on the graphene surface with equal thickness of 50 nm. The contact resistances of graphene transferred to SiO₂/Si substrates and metals were measured by the transfer length method (TLM), and the average contact resistances of Al, Cu, Ni, and Ti were found to be 345 Ω, 553 Ω, 110 Ω, and 174 Ω, respectively. It was found that Ni and Ti, which form chemical bonds with graphene, have relatively lower contact resistances compared to Al and Cu, which have physical adsorption properties. The results of this study on the electrical properties between graphene and metals are expected to contribute to the realization of high-performance graphene-based devices including electronics, optoelectronic devices, and sensors by forming low contact resistance with electrodes.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.17 no.10
• /
• pp.21-26
• /
• 2016

This study evaluates the magnitudes and distributions of contact tangential forces with the swaging depth of punch acting at the contact surfaces between a rotor core slot and a Cu bar during a sequential rotor core swaging process. The effects of the core slot shape on the magnitudes and distributions of the total contact forces were investigated to improve the productivity of the rotor core swaging process. Parametric elastic-plastic numerical analyses were performed using simplified two-dimensional cyclic symmetric plane strain models to evaluate the contact force distributions at the contact surfaces. The numerical analysis results show that the total contact tangential forces increased by about 55% with the adjacent Cu bar swaging process. The length of the core slot is a dominant factor in the core slot design as result of the increased total contact tangential forces during the swaging process of the rotor core.

• Journal of Welding and Joining
• /
• v.32 no.6
• /
• pp.35-40
• /
• 2014

The contact tip for gas metal arc welding has important functions to transmit the welding current to the wire and to guide the wire to molten pool. If the contact tip is damaged, it is a cause of lowering the welding productivity due to removal of welding defects and replacement of contact tip. In case of the use of a contact tip for a long time the arc is unstable because the processed hole in the contact tip center is larger, and the variation of aiming position of the welding wire causes a seam tracking error. In this study, gas metal arc welding experiments using contact tip of three different materials were performed. The contact tips with Cu-P, Cu-Cr, and Cu-ODS were used at the experiments, and the welding characteristics by each contact tip were evaluated. After welding contact tip appearance, welding spatter adhesion amount of the nozzle, and weld bead appearance were evaluated. The welding current and welding voltage were measured to verify arc stability during arc welding.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.444-445
• /
• 2009

The metallic contact system of silicon solar cell must have several properties, such as low contact resistance, easy application and good adhesion. Ni is shown to be a suitable barrier to Cu diffusion as well as desirable contact metal to silicon. Nickel monosilicide(NiSi) has been suggested as a suitable silicide due to its lower resistivity, lower sintering temperature and lower layer stress than $TiSi_2$. Copper and Silver can be plated by electro & light-induced plating method. Light-induced plating makes use the photovoltaic effect of solar cell to deposit the metal on the front contact. The cell is immersed into the electrolytic plating bath and irradiated at the front side by light source, which leads to a current density in the front side grid. Electroless plated Ni/ Electro&light-induced plated Cu/ Light-induced plated Ag contact solar cells result in an energy conversion efficiency of 16.446 % on $0.2\sim0.6\;{\Omega}{\cdot}cm$, $20\;\times\;20\;mm^2$, CZ(Czochralski) wafer.

• 한국태양에너지학회:학술대회논문집
• /
• 2009.11a
• /
• pp.350-355
• /
• 2009

The crysralline silicon solar cell where the solar cell market grows rapidly is occupying of about 85% or more high efficiency and low cost endeavors many crystalline solar cells. The fabricaion process of high efficiency crystalline silicon solar cells necessitate complicated fabrication processes and Ti/Pd/AG contact, This metal contacts have only been used in limited areas in spite of their good srability and low contact resistance because of expensive materials and process. Commercial solar cells with screen-printed solar cells formed by using Ag paste suffer from loe fill factor and high contact resistance and low aspect ratio. Ni and Cu metal contacts have been formed by using electroless plating and light-induced electro plating techniques to replace the Ti/Pd/Ag and screen-printed Ag contacts. Copper and Silver can be plated by electro & light-induced plating method. Light-induced plating makes use the photovoltaic effect of solar cell to deposit the metal on the front contact. The cell is immersed into the electrolytic plating bath and irradiated at the front side by light source, which leads to a current density in the front side grid. Electroless plated Ni/ Electro&light-induced plated Cu/ Light-induced plated Ag contact solar cells result in an energy conversion efficiency of 16.446 % on 0.2~0.6${\Omega}$ cm, $20{\times}20mm^2$, CZ(Czochralski) wafer.