• Membrane Journal
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• v.23 no.1
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• pp.92-99
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• 2013

In this study the nanofiltration (NF) membrane treatment of a sulfuric acid waste solutions containing copper ion ($Cu^{+2}$) discharging from the etching processes of the printed circuit board (PCB) manufacturing industry has been studied for the recycling of acid etching solution. SelRO MPS-34 4040 NF membrane from Koch company was tested to obtain the basic NF data for recycling of etching solution and separation efficiency (total rejection) of copper ion. NF experiments were carried out with a dead-end membrane filtration laboratory system. The pure water flux was increased with the increasing storage time in sulfuric acid solution and lowering pH of acid solution because of the enhancement of NF membrane damage by sulfuric acid. The permeate flux of acid solution was decreased with the increasing copper ion concentration. Total rejection of copper ion was decreased with the increasing storage time in sulfuric acid solution and copper ion concentration, and lowering the pH of acid solution. The total rejection of copper ion was decreased from initial 37% to 15% minimum value.

• Restorative Dentistry and Endodontics
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• v.13 no.2
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• pp.221-235
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• 1988

The purpose of this study was to observe characteristic properties through the polarization curves and EMPA images from 4 different types of amalgam obtained by using the potentiostats (EG & G PARC) & EPMA (Jeol JSM-35), to investigate the degree of corrosion of each phase of amalgam on the oxidation peak, and to identify corrosion products from the corroded amalgam by use of X-ray diffractometer(Rigaku). After each amlgam alloy and Hg were triturated as the direction of the manufacturer by means of the mechanical amalgamator(Shofu), the triturated mass was inserted into the cylindrical metal mold which was 12mm in diameter and 10mm in height and was condensed by means of routine manner. The specimen was removed from the mold and stored at room temperature for about 7 days. The standard surface preparation was routinely carried out. Anodic polarization measurement was employed to compare the corrosion behaviours of the amalgams in 0.9% saline solution(pH6.8~7.0) and artificial saliva (pH6.8~7.0) at $37^{\circ}C$. The open circuit potential was determined after 30 minutes' immersion of specimen in electrolyte and the potential scan was begun at the potential of 100mV cathodic from the corrosion potential. The scan rate was 1mV/sec and the surface area of amalgam exposed to the solution was 0.64$cm^2$ for each specimen. All the potentials reported are with respect to a saturated calomel electrode (SCE). EPMA images on the determined oxidation peaks of each amalgam in artificial saliva were observed. X-ray diffraction patterns of each sample were recorded before and after polarization in artificial saliva (Aristaloy, Caulk Spherical, Dispersalloy and Tytin: at +770mV, +585mV, +8.10m V and +680m V respectively) by use of a recording diffractometer. Nickel filtered Cu $K_{{\alpha}_1}$ radiation was used and sample was scanned at $4^{\circ}(2{\theta})/min.$ from $25^{\circ}$ to $80^{\circ}$. The following results were obtained. 1. Oxidation peak potential in artificial saliva shifted to more anodic direction than that in saline solution. 2. The corrosion potential of high copper amalgam was more anodic than the potential of low copper amalgam. 3. The current density was lower in artificial saliva than in saline solution. 4. One of the corrosion products, AgCl was identified by X-ray diffraction analysis. 5. ${\gamma}_2$ phase was the most susceptible to corrosion and e phase was stable in low copper amalgam and ${\eta}$' phase and Ag-Cu eutectic were susceptible to corrosion in high copper amalgam.

• Journal of the Microelectronics and Packaging Society
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• v.6 no.2
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• pp.37-43
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• 1999

Modules of the system that requires large capacity and high-speed information processing are implemented in the form of MCM that allows high-speed data processing, high density circuit integration and widely applied to such fields as ATM, GPS and PCS. Hence we developed the ATM switching module that is consisted of three chips and 2.48 Gbps data throughput, in the form of 10 multi-layer by Cu/Photo-BCB and 491pin PBGA which size is $48 \times 48 \textrm {mm}^2$. hnologies required for the development of the MCM includes extracting parameters for designing the substrate/package through the interconnect characterization to implement the high-speed characteristics, thermal management at the high-density MCM, and the generation of the testability that is one of the most difficult issues for developing the MCM. For the development of the ATM Switching MCM, we extracted signaling delay, via characteristics and crosstalk parameters through the interconnect characterization on the MCM-D. For the thermal management of 15.6 Watt under the high-density structure, we carried out the thermal analysis. formed 1.108 thermal vias through the substrate, and performed heat-proofing processing for the entire package so that it can keep the temperature less than $85^{\circ}C$. Lastly, in order to ensure the testability, we verified the substrate through fine pitch probing and applied the Boundary Scan Test (BST) for verifying the complex packaging/assembling processes, through which we developed an efficient and cost-effective product.

• Korean Chemical Engineering Research
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• v.55 no.1
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• pp.93-98
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• 2017

This experiment investigated characteristic changes in a $Cu_2ZnSnS_4$(CZTS) solar cell by applying a $Zn(O_x,S_{1-x})$ butter layer with various compositions on the upper side of the absorber layer. Among the four single layers such as $Zn(O_{0.76},S_{0.24})$, $Zn(O_{0.56},S_{0.44})$, $Zn(O_{0.33},S_{0.67})$, and $Zn(O_{0.17},S_{0.83})$, the $Zn(O_{0.76},S_{0.24})$ buffer layer was applied to the device due to its bandgap structure for suppressing electron-hole recombination. In the application of the $Zn(O_{0.76},S_{0.24})$ buffer layer to the device, the buffer layer in the device showed the composition of $Zn(O_{0.7},S_{0.3})$ because S diffused into the buffer layer from the absorber layer. The $Zn(O_{0.7},S_{0.3})$ buffer layer, having a lower energy level ($E_V$) than a CdS buffer layer, improved the $J_{SC}$ and $V_{OC}$ characteristics of the CZTS solar cell because the $Zn(O_{0.7},S_{0.3})$ buffer layer effectively suppressed electron-hole recombination. A substitution of the CdS buffer layer by the $Zn(O_{0.7},S_{0.3})$ buffer layer improved the efficiency of the CZTS solar cell from 2.75% to 4.86%.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.20 no.9
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• pp.70-77
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• 2006

We have fabricated an integrated three-phase flux-lock type SFCL, which consists of an YBCO($YB_a2Cu_3O_7$) thin film and a flux-lock reactor wound around an iron core of each phase. In order to apply the SFCL in a real power system, fault analyses for the three-phase system are essential. The short-circuit currents were effectively limited by adjusting the numbers of winding of each secondary coil and their winding directions. The flux flow generated in the iron core cancelled out under the normal operation due to the parallel connection between primary and secondary windings. However, the flux-lock type SFCL with same iron core was operated just after the fault due to the flux generating in the iron core. To analyze the current limiting characteristics, the additive polarity winding was compared with the subtractive one in the flux lock reactor. Whenever a single line-to-ground fault occurred in any phase, the peak value of the line current of the fault phase in the additive polarity winding increased up to about 12.87 times during the first-half cycle. On the other hand, the peak value in the subtractive polarity winding increased up to about 34.07 times under the same conditions. This is because the current flow between the primary and the secondary windings changed to additive or subtractive status according to the winding direction. We confirmed that the current limiting behavior in the additive polarity winding was more effective for a single-line-to-ground fault

• Corrosion Science and Technology
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• v.6 no.6
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• pp.282-285
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• 2007

Smaller size and higher integration of electronic systems make narrower interconnect pitch not only in chip-level but also in package-level. Moreover electronic systems are required to operate in harsher conditions, that is, higher current / voltage, elevated temperature / humidity, and complex chemical contaminants. Under these severe circumstances, electronic components respond to applied voltages by electrochemically ionization of metals and conducting filament forms between anode and cathode across a nonmetallic medium. This phenomenon is called as the electrochemical migration. Many kinds of metal (Cu, Ag, SnPb, Sn etc) using in electronic packages are failed by ECM. Eutectic SnPb which is used in various electronic packaging structures, that is, printed circuit boards, plastic-encapsulated packages, organic display panels, and tape chip carriers, chip-on-films etc. And the material for soldering (eutectic SnPb) using in electronic package easily makes insulation failure by ECM. In real PCB system, not only metals but also many chemical species are included. And these chemical species act as resources of contamination. Model test systems were developed to characterize the migration phenomena without contamination effect. The serpentine-shape pattern was developed for analyzing relationship of applied voltage bias and failure lifetime by the temperature / humidity biased(THB) test.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.05b
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• pp.78-81
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• 2000

A new type low-pass filter design method based on a coupled line and transmission line theory is proposed to suppress harmonics by attenuation poles in the stop band The design formula are derived using the equivalent circuit of a coupled transmission line. The new low-pass filter structure is shown to have attractive properties such as compact size, wide stop band range and low insertion loss. The seventh-order low-pass filter designed by present method Ins a cutoff frequency of 0.9 GHz with a 0.01 dB ripple level. The coupled line type low-pass filter with stripline configuration was fabricated by using a high-temperature superconducting (HTS ; $YBa_2Cu_3O_{7-x}$) thin film on MgO(100) substrate. Since the HTS coupled line type low-pass filter was proposed with five attenuation poles in stop band such as 1.8, 2.5, 4, 5.5, 62 GHz. The fabricated low-pass filter has improved the attenuation characteristics up to seven times of the cutoff frequency Bemuse of good rejection of the spurious signals and harmonics, our low-pass filter is applicable to mobile base station systems such as cellular, personal communication systems and international mobile telecommunication(IMT)-2000 systems.

• Environmental Engineering Research
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• v.25 no.4
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• pp.579-587
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• 2020

Novel silane grafted bentonite was obtained using the natural bentonite as precursor material. The material which is termed as nanocomposite was characterized by the Fourier Transform Infra-red (FT-IR) and X-ray diffraction (XRD) methods. The surface imaging and elemental mapping was performed using Scanning Electron Microscopic (SEM/EDX) technique. The electroanalytical studies were performed using the nanocomposite electrode. The electroactive surface area of nanocomposite electrode was significantly increased than the pristine bentonite or bare carbon paste based working electrode. The impedance spectroscopic studies were conducted to simulate the equivalent circuit and Nyquist plots were drawn for the carbon paste electrode and nanocomposite electrodes. A single step oxidation/reduction process occurred for As(III) having ΔE value 0.36 V at pH 2.0. The anodic stripping voltammetry was performed for concentration dependence studies of As(III) (0.5 to 20.0 ㎍/L) and reasonably a good linear relationship was obtained. The detection limit of the As(III) detection was calculated as 0.00360±0.00002 ㎍/L having with observed relative standard deviations (RSD) less than 4%. The presence of several cations and anions has not affected the detection of As(III) however, the presence of Cu(II) and Mn(II) affected the detection of As(III). The selectivity of As(III) was achieved using the Tlawng river water sample spiked with As(III).

• Progress in Superconductivity
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• v.3 no.2
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• pp.241-246
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• 2002

We have performed the current and voltage loading tests of resistive superconducting fault current limiters (SFCLS) based on $YBa_2$$Cu_3$$O_{7}$(YBCO) films with the diameter of 2 inch. The SFCL consists of meander-type YBCO stripes covered with 200 nm Au layer grown in situ for current shunt and heat dispersion at hot spots. The minimum quench current of an SFCL unit was about 25 Apeak. Seven SFCL units were connected in parallel fur the current load ing tests at power source of 100 $V_{rms}$ $/2,000A_{rms}$. This SFCL units had maximum limiting current of 170 Apeak during the fault instant and then successfully controlled the fault current below 100 Apeak within 1~2 msec after short circuit. Increased short current also reduced the quench completion time with little change of current limiting characterization. We connected six SFCL units in series fur the voltage loading tests at power source of $1,200 V_{rms}$/170 $A_{rms}$ at this time. The shunt resistors were inserted into each SFCL unit to eliminate power imbalance originated from serial connection of SFCL units. Each SFCL unit was quenched simultaneously during the fault condition. The current increased up to 40 $A_{peak}$ and decreased to 14 $A_{peak}$ after 3 cycles. Quench was completed within 1 msec after the fault. We confirmed operating characteristics of 140 kVA($120 A_{rms}$ $\times$ 1,200 $V_{rms}$) SFCL and presented the manufacturing possibility of 3.3 kV SFCL using 4 inch YBCO films.BCO films.lms.

• Progress in Superconductivity
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• v.8 no.1
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• pp.81-86
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• 2006

We investigated resistance development in $Au/YBa_2Cu_3O_7(YBCO)$ thin film meander lines during high-power faults. The meander lines were fabricated by patterning 300 nm thick YBCO films coated with 200 nm thick gold layers into meander lines. A gold film grown on the back side of the substrate was also patterned into a meander line. The front meander line was connected to a high-power fault-test circuit and the back line to a DC power supply. Resistance of both lines was measured during the fault. They were immersed in liquid nitrogen during the experiment. Behavior of the resistance development prior to quench completion could be understood better by comparing resistance of the front meander lines with that of the back. Quench completion point could be determined clearly. Resistance and temperature at the quench completion point were not affected by applied field strength. The experimental results were analyzed quantitatively with the concept of heat transfer within the meander lines/substrate and to the surrounding liquid nitrogen. In analysis, the fault period was divided into three regions: flux-flow region, region prior to quench completion, and region after quench completion. Resistance was calculated for each region, reflecting the observation for quench completion. The calculated resistance in three regions was joined seamlessly and agreed well with data.