• Title/Summary/Keyword: Cu circuit

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Development of electroless CoP plating solution for PCB surface finishing (인쇄회로기판(PCB) 표면처리를 위한 무전해 CoP 도금액 개발)

  • Lee, Hong-Gi;Jeon, Jun-Mi;Gu, Seok-Bon;Son, Yang-Su
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2013.05a
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    • pp.132-132
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    • 2013
  • 본 연구는 R/F-PCB(Rigid/Flexible Printed circuit Board)의 Cu Pattern에 최종 표면처리 방법으로 사용되는 ENIG(Electroless Ni/Immersion Gold) 공정을 대체하여 ECIG(Electroless Co/Immersion Gold)공정을 적용하고자 하는 것으로 무전해 니켈 도금의 장점인 고경도, 내마모성, 납땜성, 내식성을 가지면서 니켈 도금의 취약점인 연성을 개선한 도금액을 개발하고자 하였다. 개발된 도금액을 이용하여 Cu Pattern에 도금할 경우 일반 무전해 니켈 도금에서 나타나는 불량 원인 중 하나인 Space 부분에 도금이 되는 현상이 현저히 감소하였으며, 연성 또한 향상됨을 관찰할 수 있었다.

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A Study on the Nano Alloy Powders Synthesized by Simultaneous Pulsed Wire Evaporation (S-PWE) Method, Part I - Background (동시 전기 폭발법에 의한 나노 합금 분말 제조에 관한 연구 Part I - 동시 전기 폭발을 위한 이론적 배경)

  • ;;;O. M. Samatov;Yu. A. Kotov
    • Journal of Powder Materials
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    • v.11 no.1
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    • pp.60-68
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    • 2004
  • Pulsed wire evaporation (PWE) method is known as the promising production-technique for nanopowders. In this study, we developed and modified the previous single wire explosion equipment to the simultaneous two-wire explosion one for the fabrication of alloy or mixture of nano metallic powder. First of all, both the theoretical and empirical background of pulsed wire explosion of single wire were summarized, and compared with our experimental results for Cu and Al single wlre explosion. After then, the simultaneous wire evaporation equipment was designed, constructed, and tested. The current and voltage behavior were well matched between the calculated ones from the circuit equations, and the experimental results from simultaneous explosion of Cu and Al wire.

Effects of Chloride Ion on Accelerator and Inhibitor during the Electrolytic Cu Via-Filling Plating (전해 Cu Via-Filling 도금에서 염소이온이 가속제와 억제제에 미치는 영향)

  • Yu, Hyun-Chul;Cho, Jin-Ki
    • Journal of the Korean institute of surface engineering
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    • v.46 no.4
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    • pp.158-161
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    • 2013
  • Recently, the weight reduction and miniaturization of the electronics have placed great emphasis. The miniaturization of PCB (Printed Circuit Board) as main component among the electronic components has also become progressed. The use of acid copper plating process for Via-Filling effectively forms interlayer connection in build-up PCBs with high-density interconnections. However, in the case of copper-via filled in a bath, which is greatly dependent on the effects of additives. This paper discusses effects of Cl ion on the filling of PCB vias with electrodeposited copper based on both electrochemical experiment and practical observation of cross sections of vias.

Differential Pulse Voltammetric Determination of Copper(II) Using Glassy Carbon Electrodes Modified with Nafion-DTPA-Glycerol (Nafion-DTPA-Glycerol이 수식된 유리탄소전극을 사용한 미분펄스 전압전류법에 의한 구리(II)이온의 측정)

  • 박찬주;박은희;정근호
    • Journal of Environmental Health Sciences
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    • v.30 no.2
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    • pp.115-122
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    • 2004
  • A glassy carbon electrode(GCE) modified with nafion-DTPA (diethylene triamine-pentaacetic acid)-glycerol is used for the highly selective and sensitive determination of a trace amount of Cu(II). Various experimental parameters, which influenced the response of nafion-DTPA-glycerol modified electrode to Cu(II), are optimized. The Copper(II) is accumulated on the electrode surface by the formation of the complex in an open circuit, and the resulting surface is characterized by medium exchange, electrochemical reduction, and differential pulse voltammetry(DPV). The electrochemical response is evaluated with respect to concentration of modifier, pH and preconcentration time, quiet time, copper(II) concentration, and other variables. A linear range is obtained in the concentration range 1.0${\times}$10$^{-8}$ M-1.0${\times}$10$^{-6}$ MCu(II) with 7 min preconcentration time. The detection limit(3s) is as low as 2.36${\times}$10$^{-8}$ M (1.50 ppb).

Reformation of Dielectric Property in interface between epoxy and Cu (Epoxy-Cu간 접촉면에서의 절연특성 개선)

  • 송재주;김성홍;정남성;황종선;한병성
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.11a
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    • pp.9-12
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    • 2000
  • Insulators for high-voltage and large-power should be endured mechanically the weight of mold bushing itself and the force of pushed from contact with circuit breaker and conductor. But dielectric breakdown could be occurred result from the external circumstances and internal factors such as chemical reaction, partial discharge, change of temperature and the relation of temperature-time in process of casting. Therefore, to get rid of external and internal factors of dielectric breakdown. Furthermore, to prevent the internal cracks, void, cavity which resulted from the contraction originated on the interface between copper and epoxy resin, formed semi-conductive layer with partially carbon painted on copper bar. The PD properties and the insulation qualities of epoxy molded insulators were improved by roles of cushions for the direction of diameter and natural sliding effects as like separated from conductor for the direction of length.

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Novel Interface-engineered Junction Technology for Digital Circuit Applications

  • Yoshida, J.;Katsuno, H.;Inoue, S.;Nagano, T.
    • Progress in Superconductivity
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    • v.3 no.1
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    • pp.1-4
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    • 2001
  • Interface-engineered junctions with $YbBa_2$$Cu_3$$O_{7}$ as the counter electrode were demonstrated. The junctions exhibited excellent Josephson characteristics with a Josephson critical current ($I_{c}$) ranging from 0.1 mA to 8 mA and a magnetic field modulation of the $I_{c}$ exceeding 80% at 4.2 K while maintaining complete c-axis orientation of the counter-electrode layer. The$ 1\sigma$ spreads in $I_{c}$ for junctions with an average $I_{c}$ of 1-2 mA were 5-8% for 16 junctions within a chip, and 9.3% for a 100-junction array. Our dI/dV measurements suggest that a theoretical approach taking into account both a highly transparent barrier and the proximity effect is required to fully understand the Junction characteristics.ristics.

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Selective Leaching Process of Precious Metals (Au, Ag, etc.) from Waste Printed Circuit Boards (PCBs) (廢 PCBs부터 귀금속(Au, Ag 등)의 선택적 침출공정)

  • 오치정;이성오;국남표;김주환;김명준
    • Resources Recycling
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    • v.10 no.5
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    • pp.29-35
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    • 2001
  • This study was carried out to recover gold, silver and valuable metals from the printed circuit boards (PCBs) of waste computers. PCBs samples were crushed under 1 mm by a shredder and separated into 30% conducting and loft nonconducting materials by an electrostatic separator. The conducting materials contained valuable metals which were then used as feed materials for magnetic separation. 42% of magnetic materials from the conducting materials was removed by magnetic separation as nonvaluable materials and the others, 58% of non magnetic materials, was used as leaching samples containing 0.227 mg/g Au and 0.697 mg/g Ag. Using the materials of leaching from magnetic separation, more than 95% of copper, iron, zinc, nickel and aluminium was dissolved in 2.0M sulfuric acid solution, added with 0.2M hydrogen peroxide at $85^{\circ}C$. Au and Ag were not extracted in this solution. On the other hand, more than 95% of gold and 100% of silver were leached by the selective leaching with a mixed solvent (0.2M($NH_4$)$_2$$S_2$$O_3$,0.02M $CuSO_4$,0.4M $NH_4$OH). Finally, the residues were reacted with a NaCl solution to leach Pb whereas sulfuric acid was used to leach Sn. Recoveries reached 95% and 98% in solution, respectively.

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The Study of ILD CMP Using Abrasive Embedded Pad (고정입자 패드를 이용한 층간 절연막 CMP에 관한 연구)

  • 박재홍;김호윤;정해도
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2001.04a
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    • pp.1117-1120
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    • 2001
  • Chemical mechanical planarization(CMP) has emerged as the planarization technique of choice in both front-end and back-end integrated circuit manufacturing. Conventional CMP process utilize a polyurethane polishing pad and liquid chemical slurry containing abrasive particles. There have been serious problems in CMP in terms of repeatability and defects in patterned wafers. Since IBM's official announcement on Copper Dual Damascene(Cu2D) technology, the semiconductor world has been engaged in a Cu2D race. Today, even after~3years of extensive R&D work, the End-of-Line(EOL) yields are still too low to allow the transition of technology to manufacturing. One of the reasons behind this is the myriad of defects associated with Cu technology. Especially, dishing and erosion defects increase the resistance because they decrease the interconnection section area, and ultimately reduce the lifetime of the semiconductor. Methods to reduce dishing & erosion have recently been interface hardness of the pad, optimization of the pattern structure as dummy patterns. Dishing & erosion are initially generated an uneven pressure distribution in the materials. These defects are accelerated by free abrasive and chemical etching. Therefore, it is known that dishing & erosion can be reduced by minimizing the abrasive concentration. Minimizing the abrasive concentration by using Ce$O_2$ is the best solution for reducing dishing & erosion and for removal rate. This paper introduce dishing & erosion generating mechanism and a method for developing a semi-rigid abrasive pad to minimize dishing & erosion during CMP.

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Recovery of Nitric Acid and Valuable Metals from Spent Nitric Etching Solutions of Printed Circuit Board

  • Ahn, Jae-Woo;Ahn, Jong-Gwan;Lee, Man-Seung
    • Proceedings of the IEEK Conference
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    • 2001.10a
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    • pp.140-143
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    • 2001
  • A study has been made on the recovery of nitric acid and valuable metals such as Cu, Sn, Pb from the spent nitric etching solutions. The nitric acid was extracted effectively by TBP but the heavy metals such as Fe, Cu, Sn, Pb were not extracted by TBP from the spent nitric etching solutions. From the experimental results, 95% of nitric acid in spent etching solution was extracted at O:A ratio of 3:1 with five stage by 60% TBP and 98% of nitric acid was stripped from the loaded organic phase at O:A ratio of 1:1 with four stages by distilled water. After extracting nitric acid, Cu was recovered as a metal by electrowinning effectively and Sn was successfully removed by precipitation method by adjusting the pH of raffinate solution. Finally, Pb was recovered by cementation with iron scrap at $65^{\circ}C$. Parameters controlling the cementation process, such as temperature, pH and the effect of the additives were investigated.

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Investigation of Corrosion Characteristics with Zn, PTFE Hybrid Coating for SS400 in Sea Water (Zn, PTFE 복합 코팅에 의한 SS400 강의 해수 부식 특성 변화 연구)

  • Han, Min Su;Prak, Jae Cheul;Jang, Seok Ki;Kim, Seong Jong
    • Corrosion Science and Technology
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    • v.10 no.6
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    • pp.205-211
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    • 2011
  • The severe corrosion environment makes the steel product lifecycle short while Cu-alloys with anti-corrosion characteristic used in sea water are too expensive. This study shows that the Cu-alloy(Cu-37.25% Zn-0.67%Al) used in sea water environment can be superseded by SS400 with various coating process, evaluating electrochemical characteristics. Three coating processes were applied to SS400 such as PTFE + Zn coaing, Zn + PTFE coating and only Zn electrogalvanizing coaing. Various electrochemical experiments such as open circuit potential measurments, potentiodynamic polarization tests and analyses of Tafel constants. Mechanical properties were also measured by tensile test and hardness tests. As a result, Zn + PTFE coating for SS400 steel presented the excellent anti-corrosion characteristic in sea water.