• 한국환경과학회지
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• 제12권4호
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• pp.497-501
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• 2003

The new tridentate ligands of nitrogen donor atoms N,N-Bis(2-amino-ethyI)-benzyl-amine 2HCI(BABEA. 2HCI) and 2,6-Bis(amino-methyl)-pyridien. 2HCI(BAMP. 2HCI) were synthesized as their dihydrochloride salts and characterized by TA, IR. Mass and NMR spectroscopy. The protonation constants of the ligands and stability constants for Cd$^{2+}$, Pb$^{2+}$, Zn$^{2+}$and Cu$^{2+}$ ions were determined by potentiometric titration in aqueous solutions and compared with those of analogous ligands. The effect stability constants of ligands and metal ions for removal of heavy metals in aqueous solution were described.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.869-873
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• 2002

$Cu_2ZnSnS_4$ (CZTS) thin film is one of the candidate materials for the solar cell. It has an excellent optical absorption coefficient as well as appropriate 1.4~1.5eV band gap. The purpose of this study is replacing a half of high-cost Indium(In) atoms with low-cost Zinc(Zn) atoms and the other half with low-cost Tin(Sn) atoms in the lattice of CIS. In annealing process of thin films deposited with mixture target, the thin films were appeared the peeling. The resistivity was decreased. Thin films were deposited on ITO glass substrates using a compound target which were made by $CU_2S$, ZnS, $SnS_2$ powder were sintered in the atmosphere of Al at room temperature by rf magnetron sputtering We investigated potentialities of a low-cost material for the solar cell by measuring of thin film composition, the structure and optical properties. We could get an appropriate $Cu_2ZnSnS_4$ composition A (112) preferred orientation was appeared without annealing temperature as shown in the diffraction peaks of the CIS cells and was available for photovoltaic thin film materials. The band gap increased from 1.4 to 1.7eV as the composition ratio of Zn/Sn.. The optical absorption coefficient of the thin film was above $10^4cm^{-1}$.

• 한국표면공학회지
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• 제35권1호
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• pp.39-46
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• 2002

$Cu_2$$ZnSnS_4$(CZTS) thin film is one of the candidate materials for the solar cell. It has an excellent optical absorption coefficient as well as appropriate 1.4~1.5eV band gap. The purpose of this study is replacing a half of high-cost Indium(In) atoms with low-cost Zinc(Zn) atoms and the other half with low-cost Tin(Sn) atoms in the lattice of CIS. Thin films were deposited on ITO glass substrates using a compact target which were made by $Cu_2$S, ZnS, SnS$_2$ powder at room temperature by rf magnetron sputtering and were annealed in the atmosphere of Ar and $S_2$(g). We investigated potentialities of a low-cost material for the solar cell by measuring of thin film composition, the structure and optical properties. We could get an appropriate $Cu_2$$ZnSnS_4$ composition. Structure was coarsened with increasing temperature and (112), (200), (220), (312) planes appeared to conform to all the reflection Kesterite structure. A (112) preferred orientation was advanced with increasing the annealing temperature as shown in the diffraction peaks of the CIS cells and was available for photovoltaic thin film materials. The band gap increased from 1.51 to 1.8eV as the annealing temperature increased. The optical absorption coefficient of the thin film was about $10^4$$cm^{-1}$.

• Bulletin of the Korean Chemical Society
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• 제13권4호
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• pp.363-367
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• 1992

The crystal structure of (1,3,6,9,11,14-hexaazatricycol[12.2.1.$1^{6,9}$]octadecane)copper(Ⅱ) perchlorate, Cu($C_{12}H_{26}N_6$)$(ClO_4)_2$, has been determined by the X-ray diffraction methods. The crystal data are as follows: Mr=516.9, triclinic, ${\alpha}=8.572\;(2)$, b=8.499 (3), c=15.204 (3) ${\AA}$, ${\alpha}=80.42\;(5),\;{\beta}=73.57\;(3),\;{\gamma}=69.82\;(4)^{\circ},\;V=994.2\;{\AA}^3,\;D_C=1.726\;gcm^{-3}$, space group $P{\tilde{1}},\;Z=2,\;{\mu}=21.27\;cm^{-1}&, F(000)=534 and T=297 K. The structure was solved by direct methods and refined by full-matrix least-squares methods to and R value of 0.081 for 1608 observed reflections measured with graphite-mono-chromated Mo Ka radiation on a diffractometer. There are two independent complexes in the unit cell. The two copper ions lie at the special positions (1/2, 0, 0) and (0, 1/2, 1/2)and each complex possesses crystallographic center of symmetry. Each Cu ion is coordinated to four nitrogen donors if the hexaazamacrotricyclic ligand and weakly interacts with two oxygen atoms of the perchlorate ions to form a tetragonally distorted octahedral coordination geometry. The Cu_N (sec), Cu_N(tert) and Cu_O coordination distances are 1.985 (14), 2.055 (14) and 2.757 (13) ${\AA}$ for the complex A and 1.996 (10), 2.040 (11) and 2.660 (13) ${\AA}$ for the complex B, respectively. The macrocycles in the two independent cations assume a similar conformation with the average r.m.s. deviation of 0.073 ${\AA}$. Two 1,3-diazacyclopentane ring moieties of the hexaazamacrotricyclic ligand are placed oppositely and almost perpendicularly to the square coordination plane of the ruffled 14-membered macrocycle. The secondary N atoms are hydrogen-bonded to the perchlorate O atoms with distances of 3.017 (23) and 3.025 (19) ${\AA}$ for the complexes A and B, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.57-57
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• 2009

Programmable Metallization Cell (PMC) is a memory device based on the electrolytical characteristic of chalcogenide materials. We investigated the nature of thin films formed by photo doping of Cu ions into chalcogenide materials for use in solid electrolyte of PMC. We were able to do more economical approach by using copper which play an electrolyte ions role. The results imply that a Cu-rich phase separates owing to the reaction of Cu with free atoms from chalcogenide materials.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제36회 동계학술대회 초록집
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• pp.217.2-217.2
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• 2009

• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.139-139
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• 2000

We have investigated the adsorption and reaction of Cu(hfac)(vtms) on Cu(111) surface using TPD. The recombinative desorption of Cu(hfac)(vtms) reversibly occurs between 240 and 340K. The remaining Cu(hfac) after the desorption of vtms preferentially undergo the desorption between 330 and 370K as intact Cu(hfac) than the disproportionation reaction. The disprportionation reaction between adsorbed Cu(hfac) was observed to occur between 420 and 520K with an activation energy of 34~37 kcal/mol. the geometries and adsorption sites of Cu(hfac) have been also calculated by means of extended H ckel method. It is found that standing Cu(hfac) is more stable than lying-down Cu(hfac) on the Cu(111) surface and the Cu(hfac) molecule prefers to adsorb on the hollow site over the top or bridge sites. We also have investigated the surface modification effect by preadsorbed I and Na atoms on the reaction Cu(hfac)(vtms).

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제51권7호
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• pp.298-304
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• 2002

Transmuted impurity atoms formed in neutron-irradiated ZnO thin films were theoretically identified first and then experimentally confirmed by photoluminescence (PL). ZnO thin films grown by plasma-assisted molecular beam epitaxy were irradiated by neutron beam at room temperature. The ZnO films consist of eight constituent (Zn and O) isotropes, of which four are transmutable by neutron-irradiation; $^{64}$ , $^{68}$ Zn, $^{70}$ Zn and $^{18}$ O were expected to transmute into $^{65}$ Cu, $^{69}$ Ga, $^{71}$ Ga, and $^{19}$ F, respectively. The concentrations of these transmuted atoms were estimated in this study by considering natural abundance, neutron fluence and neutron cross section. The neutron-irradiated ZnO thin films were characterized by PL. In the PL spectra of the ZnO thin films, the Cu-related PL peaks were seen, but the Ga- or F-associated PL peaks were absent. This observation confirmed the existence of $^{65}$ Cu in the ZnO, but it could not do the formation of the other two. In this paper, the emission mechanism of Cu impurities is described and the reason for the absence of the Ga- or F-associated PL peaks is discussed as well.

• 한국결정학회지
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• 제16권2호
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• pp.107-127
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• 2005

Five Cu(II) compounds were obtained from different copper salts with btp ligands, and their structures were determined by X-ray crystallography. The structure of coordination polymer 2 contains btp-bridged tetranuclear Cu(II) units weakly connected by nitrate ions, and the structure of a discrete Cu(II) molecule 1 contains acetates and btp ligands. With perchlorate anions, two btp ligands bridge Cu(II) ions to form a double zigzag chain 3, while a single zigzag chain 4 is created with sulfate anions. The reaction of $Cu(NO_{3})_{2}$ containing $NH_{4}PF_{6}$ with btp ligands also produced a polymeric compound 5 containing $Cu(H_{2}O)_{2}^{2+}$ and $Cu(NO_{3})_{2}$ units alternatively bridged by btp ligands with H-bonds between copper bonded water and nitrate oxygen atoms. Five Zn(II) compounds were obtained from different zinc salts with btp ligands, and the structures of polymeric compounds (6, 7 and 8) and monomeric compounds (9 and 10) were determined by X-ray crystallography. With nitrate, chloride and bromide anions, btp ligands bridge Zn(II) ions to form polymeric compounds (6, 7 and 8), but btp ligands coordinate to a Zn(II) ion to form monomeric complexes (9 and 10) with $PF_{6}^{-}$ and perchlorate anions. Four silver salts and btp ligands produced two kinds of structures, dinuclear 20-membered rings and one-dimensional zigzag chain depending on different anions. For $ClO_{4}^{-}$ and OTf anions, weak interactions between Ag(I) and anions make dinuclear 20-membered rings construct polymeric compounds (11 and 13). For $PF_{6}^{-}$ anion, there are also weak interactions between Ag(I) and $F(PF_{6}^{-})(12)$, but they do not construct a polymeric compound. For $O_{2}CCF_{3}^{-}$ anion, btp ligands bridge Ag(I) atoms to make one-dimensional zigzag chain (14), and there are also interactions between Ag(I) and anions.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.210.1-210.1
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• 2014

The hexagonal boron nitride (h-BN) sheet, a 2D material like graphene sheet, is comprised of boron and nitrogen atoms. Similar to graphene, h-BN sheet has attractive mechanical properties while it has a wide band gap unlike graphene. Recently, many experimental groups studied the growth of single BN layer by chemical vapor deposition (CVD) method on the copper substrate. To study the initial stage of h-BN growth on the copper surface, we have performed density functional theory calculations. We investigate several adsorption sites of a boron or nitride atom on the Cu surfaces. Then, by increasing the number of adsorbed B and N atoms, we study formation behaviors of the BN flakes on the surface. Several types of BN flakes atoms such as triangular, linear, and hexagonal shapes are considered on the copper surface. We find that the formation of the BN flake in triangular shape is most favorable on the surface. On the basis of the theoretical results, we discuss the growth mechanism of h-BN layer on the copper surfaces in terms of its shapes in the initial stage of growth.