• Bulletin of the Korean Chemical Society
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• v.13 no.2
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• pp.131-135
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• 1992

High-Tc superconducting materials, $HoBa_2Cu_3O_{7-x}F_y$ with $0.0{\leq}y{\leq}0.5$, were synthesized by ceramic method and studied by X-ray diffraction, thermogravimetric analysis, differential thermal analysis, scanning electron microscopy and resistivity measurement. From the X-ray diffraction data, it was found that the samples had only single phase of which lattice volumes were decreased in proportional to the amount of fluorine, which indicated that the relatively small fluorine atoms are effectively substituted for the oxygen sites. Also, an anomalous phenomenon appeared that the peak intensities of (001) planes were greatly increased as fluorine contents increased. SEM photographs revealed that the grain sizes were enlarged progressively with fluorine contents. This fact could be explained along with DTA & TGA data that the incorporation of fluorine gave rise to lowering the melting point. Tc decreased as the incorporation of fluorine content increased. This implies that the superconducting electrons are perturbed due to the substitution of electronegative fluorine atom.

• Journal of the Korean Applied Science and Technology
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• v.16 no.1
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• pp.33-40
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• 1999

We used Cu as a representative of metals to be directly adsorbed on the bare Si surface and studied its removal DHF, DHF-$H_2O_2$ and BHF solution. It has been found that Cu ion in DHF adheres on every Si wafer surface that we used in our study (n, p, n+, p+) especially on the n+-Si surface. The DHF-$H_2O_2$ solution is found to be effective in removing metals featuring high electronegativity such as Cu from the p-Si and n-Si wafers. Even when the DHF-$H_2O_2$ solution has Cu ions at the concentration of 1ppm, the solution is found effective in cleaning the wafer. In the case the n+-Si and p+-Si wafers, however, their surfaces get contaminated with Cu When Cu ion of 10ppb remains in the DHF-$H_2O_2$ solution. When BHF is used, Cu in BHF is more likely to contaminate the n+-Si wafer. It is also revealed that the surfactant added to BHF improve wettability onto p-Si, n-Si and p+-Si wafer surface. This effect of the surfactant, however, is not observed on the n+-Si wafer and is increased when it is immersed in the DHF-$H_2O_2$ solution for 10min. The rate of the metallic contamination on the n+-Si wafer is found to be much higher than on the other Si wafers. In order to suppress the metallic contamination on every type of Si surface below 1010atoms/cm2, the metallic concentration in ultra pure water and high-purity DHF which is employed at the final stage of the cleaning process must be lowered below the part per trillion level. The DHF-$H_2O_2$ solution, however, degrades surface roughness on the substrate with the n+ and p+ surfaces. In order to remove metallic impurities on these surfaces, there is no choice at present but to use the $NH_4OH-H_2O_2-H_2O$ and $HCl-H_2O_2-H_2O$ cleaning.

• Journal of Powder Materials
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• v.28 no.4
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• pp.293-300
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• 2021

We investigate the effect of phosphorous content on the microstructure and magnetic properties of Fe_83.2Si_5.33-0.33xB_10.67-0.67xP_xCu_0.8 (x = 1-4 at.%) nanocrystalline soft magnetic alloys. The simultaneous addition of Cu and P to nanocrystalline alloys reportedly decreases the nanocrystalline size significantly, to 10-20 nm. In the P-containing nanocrystalline alloy, P atoms are distributed in an amorphous residual matrix, which suppresses grain growth, increases permeability, and decreases coercivity. In this study, nanocrystalline ribbons with a composition of Fe_83.2Si_5.33-0.33xB_10.67-0.67xP_xCu_0.8 (x = 1-4 at.%) are fabricated by rapid quenching melt-spinning and thermal annealing. It is demonstrated that the addition of a small amount of P to the alloy improves the glass-forming ability and increases the resistance to undesirable Fe_x(B,P) crystallization. Among the alloys investigated in this work, an Fe_83.2Si₅B₁₀P₁Cu_0.8 nanocrystalline ribbon annealed at 460℃ exhibits excellent soft-magnetic properties including low coercivity, low core loss, and high saturation magnetization. The uniform nanocrystallization of the Fe_83.2Si₅B₁₀P₁Cu_0.8 alloy is confirmed by high-resolution transmission electron microscopy analysis.

• Economic and Environmental Geology
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• v.19 no.spc
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• pp.121-130
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• 1986

In the Janggun mine, stannite occurs as anhedral grains, up to 500 micrometer in long dimension, closely associated with sphalerite, chalcopyrite, arsenopyrite, pyrrhotite, galena and rhodochrosite in the periphery of the South ore body. In reflected light, stannite is grayish yellow green in color and exhibits moderate bireflectance and strong anisotropism without any intenal reflections. Reflection; Rmax. =29.0, Rmin. =27.8 percent at a wavelength of 560nm, and VHN; 219~244kg/mm at a 50g load. The chemical composition on the average from 35 spot analyses by electron microprobe is, Cu 28.0, Fe 12.7, Zn 2.9, Mn 0.2, Sn 25.8, S 30.3, sum 99.9 (all in weight percent); the corresponding chemical formula as calculated on the basis of total atoms=8 is, Cu 1.88 Fe 0.97 Zn 0.19 Mn 0.02 Sn 0.93 S 4.01, which fulfills approximately the ideal formula of $Cu_2FeSnS_4$. The strongest reflections on the X-ray diffraction patterns are; $3.10{\AA}$ (10) (112), $2.72{\AA}$ (5) (020, 004), $1.922{\AA}$ (5) (024), $1.642{\AA}$ (3) (132), $1.244{\AA}$ (3) (143, 136, 235), $1.111{\AA}$(3) (244), $0.958{\AA}$ (1) (048, 422), the patterns are identical with those of literature. From the textural evidence of the microscopic observation, the mineral is considered to have been formed at the middle stage of hydrothermal lead-zinc-silver mineralization.

• Textile Coloration and Finishing
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• v.17 no.2 s.81
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• pp.10-18
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• 2005

Silk fabrics mordanted with $Fe^{2+},\;Ni^{2+},\;and\;Cu^{2+}$ were dyed with the aqueous extract of Cassia tora L. seed which was known to include water soluble colorant kaempferol, one of flavonol compounds. Kaempferol can react with free radicals and chelate transition metal ions, which is thought to catalyze processes leading to the appearance of free radicals and have antioxidant activity. In relation to the coordinating and chelating mechanism of the ions with the silk protein and kaempferol, reasonable conclusions should be made on the colorant uptake and the water fastness of the fabric. The amount of the colorant on the fabric was in the order of $Fe^{2+}>Ni^{2+}>Cu^{2+}$. In case of dyeing through coordinaiton bonds between transition metal ions and silk protein and colorants, it was thought that the ions with the smaller secondary hydration shell, the higher preference to the atoms of the ligand coordinated, and the suitable bonding stability for the substitution of primarily hydrated water molecules for colorants led to the higher colorant uptake. The water fastnsess of the fabric was in the order of $Fe^{2+}>Cu^{2+}>Ni^{2+}$. It should be reasonable to choose transition metal ions with weak and strong tendency to the ionic and the coordination bond, respectively, to the carboxylate anion of the silk protein. Although further research needs to be done, the conclusions above may be generally applied to the natural dyeing through the coordination bond mechanism between transition metal ions and colorants and substrates.

• 한국초전도학회:학술대회논문집
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• v.9
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• pp.260-260
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• 1999

We compared c-axis tunneling characteristics of small stacked intrinsic Josephson junctions prepared on the surface of pristine, I-, and HgI$_2$-intercalated Bi$_2Sr_2CaCu_2O_{8+x}$ (Bi2212) single crystals. The R(T) curves are almost metallic in I-Bi2212 specimens, but semiconducting in HgI$_2$-Bi2212 ones.· The transition temperatures were 82.0 K, 73.0 K, and 76.8 K for pristine Bi2212, I-Bi2212, and HgI2-Bi2212 specimens, respectively, consistent with p-T$_c$ phase diagram. Current-voltage (IV) characteristics of both kinds of specimens show multiple quasiparticle branches with well developed gap features, indicating Josephson coupling is established between neighboring CuO$_2$ planes. The critical current I$_c$ of I-Bi2212 is almost the same as of that of pristine crystals, but I$_c$ is much reduced in Hgl$_2$-Bi2212. In spite of expanded interlayer distances, the interlayer coupling is not significantly affected in I-Bi2212due to holes generated by iodine atoms. The coupling in HgI$_2$-Bi2212 is, however, weakened due to inertness of HgI$_2$ molecules and the expansion of interlayer distance. Relation between the superconducting transition temperature T$_c$ and the critical current I$_c$ seems to contradict Anderson's interlayer-pair-tunneling theory but agree with a modified version of it.

• Journal of Korea Foundry Society
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• v.21 no.4
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• pp.239-245
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• 2001

Microstructure and mechanical properties of Sn-3.1 wt.%Ag-6.9 wt.%Bi system solders on Cu-substrate were studied. The Sn3.1 wt.%Ag-6.9 wt.%Bi alloy was designed by phase diagram and chemical properties and was prepared by melting in argon atmosphere. The mechanical properties of solder/Cu joints were examined by shear strength test, and also creep test. The microstructure of Sn-3.1 wt.%Ag-6.9 wt.%Bi alloy consists of Bi-rich phase and $Ag_3Sn$ precipitate in {\beta}-Sn$ matrix phase. The shear strength of the joint was decreased with aging treatment. Crack path under shear test was through the solder. Similar crack path change mode was observed at the creep test of solder/Cu joint. The creep behavior of Sn-3.1 wt.%Ag-6.9 wt.%Bi alloy represented the inverse primary creep behavior at all test condition. It is suggested that the inverse primary creep behavior is induced from Bi solute atoms in Sn-matrix. The creep resistance of Sn-3.1Ag-6.9Bi alloy is better than that of Sn-3.5 wt.%Ag alloy at all test conditions.

• Bulletin of the Korean Chemical Society
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• v.24 no.5
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• pp.605-609
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• 2003

The lower-order lithium organocyanocuprate compound, (THF)₃Li(NC)Cu($C_6$H₃-2,6-Mes₂) (1), and the bulky terphenyl Grignard reagent, Br(THF)₂Mg($C_6$H₃-2,6-Trip₂) (2), have been synthesized and structurally characterized both in the solid state by single crystal x-ray crystallography and in solution by multi-nuclear NMR and IR spectroscopy. The compound (1) was isolated as a monomeric contact ion-pair in which the C (organic ipso)-Cu-CN-Li atoms are coordinated linearly. The lithium has a tetrahedral geometry as a result of solvation by three THF molecules. The compound (1) is the first example of fully characterized monomeric lower order lithium organocyanocuprate. The bulky Grignard reagent (2) was also isolated as a monomer in which the magnesium, solvated by two THF molecules, has a distorted tetrahedral geometry. The crystals of (1) possess triclinic symmetry with the space group $P{\={1}}$, Z = 2, with a = 12.456(3) Å, b = 12.508(3) Å, c = 13.904(3) Å, α = 99.81°, β = 103.72(3)°, and γ = 119.44(3)°. The crystals (2) have a monoclinic symmetry of space group $P2_{1/C}$, Z = 4, with a = 13.071(3) Å, b = 14.967(3) Å, c = 22.070(4) Å, and β = 98.95(3)°.

• Journal of the Korean institute of surface engineering
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• v.49 no.1
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• pp.54-61
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• 2016

Screen printing of commercially available Ag paste is the most widely used method for the front side metallization of Si solar cells. However, the metallization using Ag paste is expensive and needs high temperature annealing for reliable contact. Among many metallization schemes, Ni/Cu/Sn plating is one of the most promising methods due to low contact resistance and mass production, resulting in high efficiency and low production cost. Ni layer serves as a barrier which would prevent copper atoms from diffusion into the silicon substrate. However, Ni based schemes by electroless deposition usually have low thermal stability, and require high annealing process due to phosphorus content in the Ni based films. These problems can be resolved by adding W element in Ni-based film. In this study, Ni-W-P alloys were formed by electroless plating and properties of it such as sheet resistance, resistivity, specific contact resistivity, crystallinity, and morphology were investigated before and after annealing process by means of transmission line method (TLM), 4-point probe, X-ray diffraction (XRD), and Scanning Electron Microscopy (SEM).

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.229-229
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• 2012

Adhesion of Copper film on the aluminum oxide layer formed by anodizing an aluminum plate was enhanced by applying ion beam mixing method. Forming an conductive metal layer on the insulating oxide surface without using adhesive epoxy bonds provide metal-PCB(Printed Circuit Board) better thermal conductivities, which are crucial for high power electric device working condition. IBM (Ion beam mixing) process consists of 3 steps; a preliminary deposition of an film, ion beam bombardment, and additional deposition of film with a proper thickness for the application. For the deposition of the films, e-beam evaporation method was used and 70 KeV N-ions were applied for the ion beam bombardment in this work. Adhesions of the interfaces measured by the adhesive tape test and the pull-off test showed an enhancement with the aid of IBM and the adhesion of the ion-beam-mixed films were commercially acceptable. The mixing feature of the atoms near the interface was studied by scanning electron microscopy, Auger electron spectroscopy, and X-ray photoelectron spectroscopy.