• Journal of the Microelectronics and Packaging Society
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• v.15 no.4
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• pp.31-39
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• 2008

To develop the MEMS cap bonding process without cavity formation, we electroplated Cu/Sn rim structures and measured the bonding characteristics for the Cu/Sn rims of $25{\sim}400{\mu}m$ width. As the effective device-mounting area ratio decreased and the failure strength ratio increased for wider Cu/Sn rim, these two properties were estimated to be optimized for the Cu/Sn rim with 150 ${\mu}m$ width. Complete bonding was accomplished at the whole interfaces of the Cu/Sn packages with the rim widths of 25 ${\mu}m$ and 50 ${\mu}m$. However, voids were observed locally at the interfaces with the rim widths larger than 100 ${\mu}m$. Such voids were formed by local non-contact between the upper and lower rims due to the surface roughness of the electroplated Sn.

• Proceedings of the KWS Conference
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• 2006.10a
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• pp.169-171
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• 2006

Solderability and reaction properties were investigated for four Pb-free alloys as a function of Ag contents; Sn-4.0Ag-0.5Cu, Sn-3.0Ag-0.5Cu, Sn-2.5Ag-0.5Cu, and Sn-1.0Ag-0.5Cu. The alloy of the lowest Ag content, i.e., Sn-1.0Ag-0.5Cu, showed poor wetting properties as the reaction temperature decreased to 230oC. Variation of Ag concentration in the Sn-xAg-0.5Cu alloy shifted exothermic peaks indicating the undercooling temperature in DSC curve. For the aging process at 170oC, the thickness of IMCs at the board-side solder/Cu interface increased with the Ag concentration.

• Journal of the Microelectronics and Packaging Society
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• v.14 no.4
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• pp.21-25
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• 2007

In this study, the properties of Sn-0.7wt%Cu-Xwt%Re(X=$0.01{\sim}1.0$) older were investigated by using DSC(differential scanning calorimetry), wetting balance, victors hardness and tensile testers. The melting temperature of solder was increased with increasing the contents of rare earth element, and the melting temperature range of Sn-0.7Cu-($0.01{\sim}1.0$)Re solder was $233.9{\sim}234.7^{\circ}C$. The wettability with Sn-0.7Cu-0.1Re solder was higher than that of Sn-0.7Cu-0.01Re and Sn-0.7Cu-1.0Re solders, and the wettability of Sn-0.7Cu-0.1Re solder was higher than that of Sn-0.7wt%Cu-0.01w%P solder. Also, the hardness and tensile strength of solder were increased with increasing the contents of rare earth element.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.2
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• pp.134-140
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• 2019

Oxide ($SnO_2$)/metal alloy (Cu(Ni))/oxide ($SnO_2$) multilayer films were fabricated using the magnetron sputtering technique. The oxide and metal alloy were $SnO_2$ and Ni-doped Cu, respectively. The structural, optical, and electrical properties of the multilayer films were investigated using X-ray diffraction (XRD), ultraviolet-visible (UV-vis) spectrophotometry, and 4-point probe measurements, respectively. The properties of the $SnO_2/Cu(Ni)/SnO_2$ multilayer films were dependent on the thickness and Ni doping of the mid-layer film. Since Ni atoms inhibit the diffusion and aggregation of Cu atoms, the grain growth of Cu is delayed upon Ni addition. For $250^{\circ}C$, the Haccke's figure of merit (FOM) of the $SnO_2$ (30 nm)/Cu(Ni) (8 nm)/$SnO_2$ (30 nm) multilayer film was evaluated to be $0.17{\times}10^{-3}{\Omega}^{-1}$.

• Korean Journal of Metals and Materials
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• v.47 no.12
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• pp.842-851
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• 2009

The long-term reliability of Sn-0.3wt%Ag-0.7wt%Cu solder joints was evaluated and compared with Sn-3.0wt%Ag-0.5wt%Cu under thermal shock conditions. Test vehicles were prepared to use Sn-0.3Ag-0.7Cu and Sn-3.0Ag-0.5Cu solder alloys. To compare the shear strength of the solder joints, 0603, 1005, 1608, 2012, 3216 and 4232 multi-layer ceramic chip capacitors were used. A reflow soldering process was utilized in the preparation of the test vehicles involving a FR-4 material-based printed circuit board (PCB). To compare the shear strength degradation following the thermal shock cycles, a thermal shock test was conducted up to 2,000 cycles at temperatures ranging from $-40^{\circ}C$ to $85^{\circ}C$, with a dwell time of 30 min at each temperature. The shear strength of the solder joints of the chip capacitors was measured at every 500 cycles in each case. The intermetallic compounds (IMCs) of the solder joint interfaces werealso analyzed by scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDS). The results showed that the reliability of Sn-0.3Ag-0.7Cu solder joints was very close to that of Sn-3.0Ag-0.5Cu. Consequently, it was confirmed that Sn-0.3Ag-0.7Cu solder alloy with a low silver content can be replaced with Sn-3.0Ag-0.5Cu.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.4
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• pp.87-92
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• 2008

The interface microstructure of Sn-3.5Ag/Cu joint was modified by electroplating varying amount of Zn on Cu UBM. As the amount of Zn dissolved in Sn-3.5Ag solder increased with the electroplating Zn thickness, Cu-Sn IMCs such as $Cu_6Sn_5$ and $Cu_3Sn$ were replaced by Zn-containing IMCs such as $Cu_5Zn_8$ and $Ag_5Zn_8$, which increased the drop reliability of solder joints significantly. When the amount of Zn dissolved in solder was about 3.8wt%, drop resistance was best due to the effective suppression of Cu-Sn IMC and voids at the interface.

• Journal of the Microelectronics and Packaging Society
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• v.14 no.4
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• pp.27-36
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• 2007

In this study, we investigated the interfacial reactions between various Sn-Ag-Cu(SAC) solder alloys and ENIG(Electroless Ni Immersion Gold) and Cu-OSP(Organic Solderability Preservative) pad finish. In the case of the interfacial reaction between Sb added SAC solder and ENlf thinner P-rich Ni layer was formed at the interface. In the case of the interfacial reaction between Ni added SAC solder and Cu-OSP, the uniform $Cu_6Sn_5$, intermetallic compounds(IMCs) were formed and $Cu_6Sn_5$ grain did not grow after multiple reflows. Thinner $Cu_3Sn$ IMCs were farmed at the interface between $Cu_6Sn_5$ and Cu-OSP after $150^{\circ}C$ thermal aging.

• Journal of the Microelectronics and Packaging Society
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• v.8 no.4
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• pp.47-52
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• 2001

Pb-free wave soldering process of AC Adapter was implemented by six sigma method using Sn-Cu-Ni type solder. The solder joint appearance, microstructural change, a lift-off phenomenon and reliability were evaluated through thermal shuck test. $(Cu,Ni)_6/Sn_5$-type intermetallic compound of which thickness is about 5 $\mu\textrm{m}$ was found at solder joint between Sn-Cu-Ni solder and copper land. After applying the thermal shock test of as-soldered product up to 750 cycles, no crack was fecund at the solder joint. The newly developed product was superior to conventional one in terms of productivity and reliability.

• Journal of Korea Foundry Society
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• v.21 no.2
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• pp.135-140
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• 2001

Microstructure of the bell made with Cu-Sn alloys was examined by optical and scanning electron microscope and that analyzed quantitatively with image analyzer. Also acoustic characteristics of the bells were measured in detail by using FFT type power spectrum analyzer. ${\alpha}-single$ phases of large grains only were observed in Cu-5%Sn alloy. However mixed structure of primary ${\alpha}-phase$ and eutectoid of ${\alpha}+{\delta}%_o$ was existed in the Cu-Sn alloys with more than 9%Sn. Also the area fraction of eutectoid phases gradually increased with an increased Sn content. From the result of acoustic test, it was found that frequency and tonal intensity decreased with the increased Sn content from 5%Sn to 11%Sn, and those were rather increased with further increase of that. The lowest frequency and tonal intensity were showed in Cu-11%Sn, and porosity decreased considerably frequency and tonal intensity of the bells.

• Korean Journal of Materials Research
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• v.23 no.3
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• pp.183-189
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• 2013

$Cu_2ZnSn(S,Se)_4$ material is receiving an increased amount of attention for solar cell applications as an absorber layer because it consists of inexpensive and abundant materials (Zn and Sn) instead of the expensive and rare materials (In and Ga) in $Cu(In,Ga)Se_2$ solar cells. We were able to achieve a cell conversion efficiency to 4.7% by the selenization of a stacked metal precursor with the Cu/(Zn + Sn)/Mo/glass structure. However, the selenization of the metal precursor results in large voids at the absorber/Mo interface because metals diffuse out through the top CZTSe layer. To avoid the voids at the absorber/Mo interface, binary selenide compounds of ZnSe and $SnSe_2$ were employed as a precursor instead of Zn and Sn metals. It was found that the precursor with Cu/$SnSe_2$/ZnSe stack provided a uniform film with larger grains compared to that with $Cu_2Se/SnSe_2$/ZnSe stack. Also, voids were not observed at the $Cu_2ZnSnSe_4$/Mo interface. A severe loss of Sn was observed after a high-temperature annealing process, suggesting that selenization in this case should be performed in a closed system with a uniform temperature in a $SnSe_2$ environment. However, in the experiments, Cu top-layer stack had more of an effect on reducing Sn loss compared to $Cu_2Se$ top-layer stack.