• Journal of the Microelectronics and Packaging Society
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• v.11 no.4 s.33
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• pp.43-48
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• 2004

Electromigration of Sn-3.5Ag-0.5Cu solder bumps was investigated with current densities of $3{\~}4{\times}10^4 A/cm^2$ at temperatures of $130{\~}160^{\circ}C$ using flip chip specimens which consisted of upper Si chip and lower Si substrate. Electromigration failure of the Sn-3.5Ag-0.5Cu solder bump occurred with complete consumption of Cu UBM and void formation at cathode side of the solder bump. The activation energies for electromigration of the Sn-3.5Ag-0.5Cu solder bump were measured as 0.61 eV at current density of $3{\times}10^4 A/cm^2$, 0.63 eV at $3.5{\times}10^4 A/cm^2$, and 0.77 eV at $4{\times}10^4 A/cm^2$, respectively.

• Journal of Conservation Science
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• v.30 no.4
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• pp.417-425
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• 2014

Color characteristics of the Cu-Sn alloys (bronze) in as-cast conditions were determined by reference to the $L^*$, $a^*$, $b^*$ color space. Results show that the values of $a^*$ and $b^*$ decrease with the increase in Sn levels, indicating that the colors of bronze alloys are increasingly away from red and yellow with the increase in the fraction of the ${\delta}$ phase while the opposite is true with the ${\alpha}$ phase. It has also been found in similar experiments with the Cu-22% Sn alloys that heat treatments in varying conditions produce subtle differences in their color characteristics as observed in the $L^*$, $a^*$, $b^*$ color space, due likely to the formation of various phases in different fractions.

• Journal of the Mineralogical Society of Korea
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• v.4 no.1
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• pp.43-50
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• 1991

Two solid solution-type phases has been experimentally found in the quaternary system Cu-Fe-Sn-S:$(Fe, Cu, Sn)_{1+x}$ and $Cu_{2-x}Fe_(1+x}SnS_4$. These solid solutions are stable around the CuS-FeS-SnS referecne plane in the composition tetrahedron. One is the sphalerite-type monosulfide solid solution which has a extensive stability range with varying degrees of sulfur/metal ratio 9.7-1.0/1.0. The other is tetrahedrite-type phase $Cu_{2-y)Fe_{1+y}SnS_4(y_{max}=0.4)$ which is stable along the $Cu_2FeSnS_4-FeS$ tie line, but shows no phase transformation in the subsolidus range and decomposes incongruently at the range of 835-862${\circ}C$, depending on the compositional variation. Particularly, the latter phase shows the characteristic superstructure reflections, indicating that it is a derivative of sphalerite structure. The stability field of these two sphalerite-type phases are defined on the basis of diffraction pattern and optical homogeneity of the synthetic materials at the temperature range of 700-400${\circ}C$.

• Bulletin of the Korean Chemical Society
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• v.35 no.8
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• pp.2331-2334
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• 2014

$Cu_2SnSe_3$ (CTSe) and $Cu_2ZnSnSe_4$ (CZTSe) nanoparticles were synthesized by sonochemical reactions under multibubble sonoluminescence (MBSL) conditions. First, $Cu_2SnSe_3$ nanoparticles were synthesized by the sonochemical method with an 85% yield, using CuCl, $SnCl_2$, and Se. Second, ZnSe was coated on the CTSe nanoparticles by the same method. Then, they were transformed into CZTSe nanoparticles of 5-7 nm diameters by heating them at $500^{\circ}C$ for 1 h. The ratios between Zn and Sn could be controlled from 1 to 3.75 by adjusting the relative concentrations of CTSe and ZnSe. With relatively lower Zn:Sn ratios (0.75-1.26), there are mostly CZTSe nanoparticles but they are believed to include very small amount of CTS and ZnSe particles. The prepared nanoparticles show different band gaps from 1.36 to 1.47 eV depending on the Zn/Sn ratios. In this sonochemical method without using any toxic or high temperature solvents, the specific stoichiometric element Zn/Sn ratios in CZTSe were controllable on demand and their experimental results were always reproducible in separate syntheses. The CZTSe nanoparticles were investigated by using X-ray diffractometer, a UV-Vis spectrophotometer, scanning electron microscope, Raman spectroscopy, and a high resolution-transmission electron microscope.

• Journal of the Microelectronics and Packaging Society
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• v.11 no.3 s.32
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• pp.1-7
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• 2004

Tin plating on component finishes may grow whiskers under certain conditions, which may cause failures in electronics equipment. To protect the environment, 'lead-free' among component finishes is being promoted worldwide. This paper presents the evaluation results of whiskers on two kinds of lead-free plating materials at the plating temperature and under the reliability test. The rising plating temperature caused increasing the size of plating grain and shorting the growth of whisker. The whisker was grown under the temperature cycling the bent type in matt Sn plating and striated type in malt Sn-Bi. The whisker growth in Sn-Bi plating was shorter than that in Sn plating. In FeNi42 leadframe, the $7.0{\~}10.0{\mu}m$ diameter and the $25.0{\~}45.0{\mu}m$ long whisker was grown under 300 cycles. In the 300 cycles of Cu leadframe, only the nodule(nuclear state) grew on the surface, and in the 600 cycles, a $3.0{\~}4.0{\mu}m$ short whisker grew. After 600 cycles, the ${\~}0.34{\mu}m$ thin $Ni_3Sn_4$ formed on the Sn-plated FeNi42. However, we observed the amount of $0.76{\~}1.14{\mu}m$ thick $Cu_6Sn_5$ and ${\~}0.27{\mu}m$ thin $Cu_3Sn$ intermetallics were observed between the Sn and Cu interfaces. Therefore, the main growth factor of a whisker is the intermetallic compound in the Cu leadframe, and the coefficient of thermal expansion mismatch in FeNi42.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2016.11a
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• pp.112-112
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• 2016

인체접촉시 니켈도금의 알러지 반응을 억제하기 위한 대체 도금기술인 비 시안계 Cu-Sn 합금도금을 개발함에 있어서, 황산구리5수화물과 황산제일주석을 금속염으로 하여 황산 및 계면활성제, 유화제 등을 포함한 각종 유기첨가제를 포함하였고 특히 은백색조의 외관 색상과 안정적인 Cu-Sn 합금전착을 위해 2종의 착화제인 EDTP($C_{14}H_{32}N_2O_4$)와 TEA(Triethanolamine)를 첨가한 비 시안계 Cu-Sn 합금 도금액을 도출하였다. Cu-Sn 합금도금 피막 조성의 균일화를 도모하기 위해서는 합금 도금액중의 Cu와 Sn 금속이온 농도를 일정하게 유지하는 것이 필요하다. 그러나 합금 도금액중 2가 주석이온($Sn^{2+}$)은 수용액중에서 4가 주석이온($Sn^{4+}$)으로 산화됨으로써 도금액 색상이 백탁이 되고 Stannic Hydroxide($Sn(OH)_4$, $SnO_2{\cdot}2H_2O$)이 생성되어 대량의 침전물이 침강하는 문제점이 발생되는 등 시간 경과에 따른 도금액의 경시 변화가 발생되었다. 상기 침전물은 연속여과에 의해 제거 가능하나 합금 도금액중 $Sn^{2+}$ 농도가 지속적으로 감소하게 된다. 이는 합금 도금액중 금속이온 비율이 변동함으로써 합금도금 피막의 조성비를 일정하게 유지하는 것이 곤란해진다. 이에 $Sn^{4+}$ 침전물 생성을 방지하기 위한 산화방지제를 개발하고 또한 산화방지제의 첨가에 따른 도금 피막 외관에 미치는 영향을 평가하여 외관 개선을 위한 광택제를 개발하고자 한다. 본 연구의 결과를 토대로 니켈도금과 동등 이상의 기능 특성을 갖는 비시안계 Cu-Sn 합금도금액을 개발하여 실용화하는 것을 목적으로 하였다.

• Korean Journal of Metals and Materials
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• v.48 no.6
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• pp.557-564
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• 2010

Formation of Sn through-silicon-via (TSV) and its interconnection processes were studied in order to form a three-dimensional interconnection structure of chip-stack packages. Different from the conventional formation of Cu TSVs, which require a complicated Cu electroplating process, Sn TSVs can be formed easily by Sn electroplating and reflow. Sn via-filling behavior did not depend on the shape of the Sn electroplated layer, allowing a much wider process window for the formation of Sn TSVs compared to the conventional Cu TSV process. Interlocking joints were processed by intercalation of Cu bumps into Sn vias to form interconnections between chips with Sn TSVs, and the mechanical integrity of the interlocking joints was evaluated with a die shear test.

• Journal of the Korean institute of surface engineering
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• v.22 no.2
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• pp.47-54
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• 1989

The effects of intermetallic compound growt on the sheet resistance and soldreability as functions of the aging time, the temperature, and the conditions of substrates have been investi-gated in the electroplallic compound (mainy Cu6Sn5and Ni3Sn4) and the number of phase interface increased, the sheet resistance increased. Spread tests showed that the solderability was dereased with the intermetallic compounds growth and increased with the thickness of electroplated Sn. The surface morphology or agin size of the compound layer singificantly affect the solderability. The solderability of Sn/Ni system was superiot to Sn/Ni system was sperior to that of Sn/Cu system and the intermetallic compounds growth was solwer in the former system.

• Proceedings of the KWS Conference
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• 2002.10a
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• pp.487-492
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• 2002

The growth kinetics of intermetallic compound layers formed between eutectic Sn-58Bi solder and (Cu, electroless Ni-P/Cu) substrate were investigated at temperature between 70 and 120 C for 1 to 60 days. The layer growth of intermetallic compound in the couple of the Sn-58Bi/Cu and Sn-58Bi/electroless Ni-P system satisfied the parabolic law at given temperature range. As a whole, because the values of time exponent (n) have approximately 0.5, the layer growth of the intermetallic compound was mainly controlled by volume diffusion over the temperature range studied. The apparent activation energies of Cu$_{6}$Sn$_{5}$ and Ni$_3$Sn$_4$ intermetallic compound in the couple of the Sn-58Bi/Cu and Sn-58Bi/electroless Ni-P were 127.9 and 81.6 kJ/mol, respectively.ely.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1472-1474
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• 1997

In this study, the $Nb_3Sn$ wire was tried to fabricate by internal tin process to investigate the relationship between the processing parameters in a cold working and the microstructure. The critical current densities of $Nb_3Sn$ wires were evaluated in magnetic fields at 4.2 K. $Nb_3Sn$ compound layer was found to be formed between Nb core and Cu-Sn. The Cu part in the wire transformed to Cu-Sn by the reaction with Sn and the Sn in the Cu-Sn part reacted with Nb.