• Current Photovoltaic Research
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• v.1 no.1
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• pp.44-51
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• 2013

For preparing a device-quality $CuInSe_2$ (CISe) light-absorbing layer by single-bath electrodeposition for a superstrate-type CISe cell, morphological properties of the CISe layers were investigated by varying concentrations of sulfamic acid and potassium biphthalate, complexing/buffering agents. CISe films were grown on an $In_2Se_3$ film by applying a constant voltage of -0.5V versus Ag/AgCl for 90 min in a solution with precursors of $CuCl_2$, $InCl_3$, and $SeO_2$, and a KCl electrolyte. A dense and smooth layer of CISe could be obtained with a solution containing both sulfamic acid and potassium biphthalate in a narrow concentration range of combination. A CISe layer prepared on the $In_2Se_3$ film with proper concentrations of complexing/buffering agents exhibited thickness of $1.6{\sim}1.8{\mu}m$ with few undesirable secondary phases. On the other hand, when the bath solution did not contain either sulfamic acid or potassium biphthalate, a CISe film appeared to contain undesirable flake-shape $Cu_{2-x}Se$ phases or sparse pores in the upper part of film.

• Journal of the Korean institute of surface engineering
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• v.43 no.1
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• pp.1-6
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• 2010

The effect of organic additives, 1-(3-sulfoproyl)-2-vinylpyridineium hydroxide (SVH) and thiourea (TU), on the precision copper electrodeposition was investigated with optical, electrochemical and x-ray diffraction techniques. It was found that SVH played a r ole as a n accelerator and TU as an i nhibitor during the electroreduction of cupric ions in acidic Cu electroplating solution. Through electrochemical measurements, TU showed more strong interaction with cupric ions than SVH and dominated overall Cu electroplating process when both additives were present in the solution. In the case of three dimensional Cu electrodeposition on the 20 ${\mu}m$-patterned Ni substrates, SVH controlled the upright growth of Cu electrodeposits and so determined its flatness, while TU prohibited the lateral spreading of Cu in the course of pulse-reverse pulse current adaptation. With microscopic observation, we obtained the optimum organic additives composition, that is, 100 ppm SVH and 200 ppm TU during the current pulsation.

• Korean Journal of Metals and Materials
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• v.48 no.8
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• pp.757-764
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• 2010

We report on the effect of additives on the microstructure and corrosion properties of electrodeposited Cu films. Copper films were fabricated by electrodeposition on various concentrations of gelatin in a copper sulfate electrolyte. The surface morphologies of the Cu films were observed using a scanning electron microscope (SEM), and crystal orientation of the Cu films was analyzed by X-ray diffraction measurement. (220) plane was the dominant orientation when the films were fabricated at ambient temperature, decreasing in dominance with addition of gelatin. On the other hand, (111) plane-Cu films were preferentially grown at $40^{\circ}C$, and were also diminished with adding additives. Corrosion rate measurements using the Tafel extrapolation method based on corrosion potential and current reveal the effect of additives on corrosion behavior. Corrosion behavior was found to be strongly related to the orientation of the films. Consequently, additives like gelatin influence crystal orientation of the films, and if a less dense crystal plane, e.g. (220), is preferentially oriented during electrodeposition, a lower corrosion rate could be produced, since the plane shows a lower current density.

• Journal of Electrochemical Science and Technology
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• v.11 no.2
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• pp.172-179
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• 2020

The impact of effective parameters on the electrodeposition rate optimization of Au-Cu alloy at high thicknesses on the silver substrate was investigated in the present study. After ensuring the formation of gold alloy deposits with the desired and standard percentage of gold with the cartage of 18K and other standard karats that should be observed in the manufacturing of the gold and jewelry artifacts, comparing the rate of gold-copper deposition by direct and pulsed current was done. The rate of deposition with pulse current was significantly higher than direct current. In this process, the duty cycle parameter was effectively optimized by the "one factor at a time" method to achieve maximum deposition rate. Particular parameters in this work were direct and pulse current densities, bath temperature, concentration of gold and cyanide ions in electrolyte, pH, agitation and wetting agent additive. Scanning electron microscopy (SEM) and surface chemical analysis system (EDS) were used to study the effect of deposition on the cross-sections of the formed layers. The results revealed that the Au-Cu alloy layer formed with concentrations of 6gr·L^-1 Au, 55gr·L^-1 Cu, 24 gr·L^-1 KCN and 1 ml·L^-1 Lauryl dimethyl amine oxide (LDAO) in the 0.6 mA·cm^-2 average current density and 30% duty cycle, had 0.841 ㎛·min^-1 Which was the highest deposition rate. The use of electrodeposition of pure and alloy gold thick layers as a production method can reduce the use of gold metal in the production of hallow gold artifacts, create sophisticated and unique models, and diversify production by maintaining standard karats, hardness, thickness and mechanical strength. This will not only make the process economical, it will also provide significant added value to the gold artifacts. By pulsating of currents and increasing the duty cycle means reducing the pulse off-time, and if the pulse off-time becomes too short, the electric double layer would not have sufficient growth time, and its thickness decreases. These results show the effect of pulsed current on increasing the electrodeposition rate of Au-Cu alloy confirming the previous studies on the effect of pulsed current on increasing the deposition rate of Au-Cu alloy.

• Korean Journal of Materials Research
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• v.20 no.1
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• pp.12-18
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• 2010

$CuInSe_2$ (CIS) thin films were electrodeposited on Mo-coated glass substrates in acidic solutions containing $Cu^{2+}$, $In^{3+}$, and $Se^{4+}$ ions, depending on deposition parameters such as deposition potential (-0.4 to -0.8 V[SCE]) and pH (1.7 to 1.9). The influences of PH and deposition potential on the atomic composition of Cu, In, and Se in the deposited films were observed. The best chemical composition, approaching 1:1:2 atomic ratio for the elements, was achieved at -0.5 V (SCE) and pH 1.8. The as-deposited films showed low crystallinity and were annealed at 300 to $500^{\circ}C$ for 30 min to improve crystallization. The surface morphologies, microstructures, and crystallographic structures of the annealed films as well as the as-deposited films were analyzed with AFM, SEM, and XRD. The defects of spherical particles appeared on the surfaces of CIS thin films in the as-deposited state and decreased in size and number with increasing annealing temperatures. Additionally, the crystallization to chalcopyrite structure and surface roughness (Ra) of the as-deposited thin films were improved with the annealing process.

• 한국전기화학회:학술대회논문집
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• 2000.10a
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• pp.18-18
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• 2000

• Korean Journal of Materials Research
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• v.26 no.12
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• pp.714-720
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• 2016

We performed this study to understand the effect of a single-crystalline anode on the mechanical properties of as-deposited films during electrochemical deposition. We used a (111) single- crystalline Cu plate as an anode, and Si substrates with Cr/Au conductive seed layers were prepared for the cathode. Electrodeposition was performed with a standard 3-electrode system in copper sulfate electrolyte. Interestingly, the grain boundaries of the as-deposited Cu thin films using single-crystalline Cu anode were not distinct; this is in contrast to the easily recognizable grain boundaries of the Cu thin films that were formed using a poly-crystalline Cu anode. Tensile testing was performed to obtain the mechanical properties of the Cu thin films. Ultimate tensile strength and elongation to failure of the Cu thin films fabricated using the (111) single-crystalline Cu anode were found to have increased by approximately 52 % and 37 %, respectively, compared with those values of the Cu thin films fabricated using apoly-crystalline Cu anode. We applied ultrasonic irradiation during electrodeposition to disturb the uniform stream; we then observed no single-crystalline anode effect. Consequently, it is presumed that the single-crystalline Cu anode can induce a directional/uniform stream of ions in the electrolyte that can create films with smeared grain boundaries, which boundaries strongly affect the mechanical properties of the electrodeposited Cu films.

• Journal of the Korean Electrochemical Society
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• v.25 no.3
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• pp.113-118
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• 2022

In this study, the effect of polyethylene glycol (PEG) on Cu electrodeposition was analyzed using cyclic voltammetry. The adsorption of PEG was affected by the specific adsorption of sulfate ion (SO₄^2-) or chloride ion (Cl^-). In SO₄^2--based plating solution, the adsorption of PEG was limited by the adsorbed SO₄^2-. Accordingly, the adsorbed PEG could suppress the electron transfer for Cu electrodeposition, but its effect was not significant. Meanwhile, in the plating solution composed of perchlorate ion (ClO₄^-) which does not specifically adsorb on Cu surface, a strong suppression effect of PEG was observed and it was proportional to the molecular weight of PEG. On the other hand, when Cl^- was specifically adsorbed on Cu surface, the suppression effect of PEG was enhanced because PEG and Cl^- formed an interrelated adsorbate. The synergetic effect of PEG and Cl^- depended on the composition of the plating solution, which means that the synergy between PEG and Cl^- is based on the physical interaction. For example, the hydrophobicity of PEG plays an important role in the interaction, as the suppression effect of PEG derivative having a hydrocarbon tail was further enhanced with the addition of Cl^-.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.3
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• pp.9-17
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• 2008

Cu mushroom bumps were formed by electrodeposition and flip-chip bonded to Sn substrate pads. Contact resistances of the Cu-mushroom-bump joints were measured and compared with those of the Sn-planar-bump joints. The Cu-mushroom-bump joints, processed at bonding stresses ranging from 19.1 to 95.2 MPa, exhibited contact resistances near $15m\Omega$/bump. Superior contact-resistance characteristics to those of the Sn-planar-bump joints were obtained with the Cu-mushroom-bump joints. Contact resistance of the Cu-mushroom-bump joints was not dependent upon the thickness of the as-elecroplated Sn-capcoating layer ranging from $1{\mu}m$ to $4{\mu}m$. When the Sn-cap-coating layer was reflowed, however, the contact resistance was greatly affected by the thickness and the reflow time of the Sn-cap-coating layer.

• 한국초전도학회:학술대회논문집
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• v.12
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• pp.60-60
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• 2002