• Journal of the Korean Society for Precision Engineering
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• v.26 no.7
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• pp.112-119
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• 2009

The purpose of this study is to evaluate the evaluation of process yield performed by using Sn & Cu treatment on the surface to optimize process condition for Lead-free solder application. The materials which are used for the New Surface Treatment study are Semi-Dulling plating for high speed Sn/Cu alloy of Soft Alloy GTC-33 Pb free known as "UEMURA Method" and plating substrate is alloy 42.Especially in lead-free plating process, it is important to control plating thickness and Copper composition than Sn/Pb plating. Evaluated and controlled plating thickness $12{\pm}3um$, Copper composition $2{\pm}1%$, plating particle and visual inspection. The optimization of these parameters and condition makes it makes possible to apply Sn/Cu Lead-free solder from Sn/Pb alloy.

• Proceedings of the KWS Conference
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• 2006.10a
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• pp.187-189
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• 2006

최근 유연솔더에서 무연솔더로 전환함에 따라서 PCB의 도금이 솔더접합부의 각도에 미치는 영향이 중요하게 되었다. 현재 PCB 도금은 Sn, Au, OSP 등으로 다양하게 진행되고 있다. 그러나 PCB 도금이 솔더접합부의 강도에 미치는 영향에 대한 연구는 아직 미비하다. 따라서 본 연구에서는 PCB 도금(Sn, Au, OSP)이 무연솔더(Sn-3.0Ag-0.5Cu) 접합부의 초기 전단강도에 미치는 영향과 열사이클시험 후 솔더접합부의 전단강도에 미치는 영향에 대해서 연구하였다.

• Applied Chemistry for Engineering
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• v.8 no.4
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• pp.568-574
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• 1997

The effect of microencapsulation of maetal hydride (MH) with copper on the electrode performance of a Ni/MH battery has been investigated. The MH electrodes were prepared with a combination of cold press and paste methods. The discharge capacity of the electrode increased with an addition of small amounts if CMC into the electrode, but decreased when heat-treated in an oxygen-free nitrogen flow. The capacity of a Cu-coated $LaNi_5$ electrode was higher than that of LaNi5electrode. The discharge capacity of the electrode prepared with Cu-coated $LaNi_5$ increased with the increase of copper content in the electrode. It is considered that the increase of copper content enhanced the current density on the electrode surface, leading to the increase of the discharge capacity The MH electrode coated by an acidic electroless plating method showed much higher discharge capacity than that using an alkaline electroless plating method. The discharge capacity of the $LaNi_{4.5}Al_{0.5}$ electrode was higher than that of the $LaNi_5$ electrode. Also, the effect of microencapsulation on the deactivation of $LaNi_5$ was studied using an absorption-desorption cycle in CO-containing hydrogen.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.05a
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• pp.138-140
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• 2009

철강연속주조용 Cu몰드의 내마모성 향상을 위한 Ni-Co/SiC 복합도금을 실행하였다. 우선, Ni, Co의 설파민산 및 황산 Precursor로부터 생성된 피막의 내마모성을 평가하여, Ni-Co 최적 합금도금액을 선정하였다. 이 도금액에 마이크로 및 나노미터 크기의 SiC분말을 분산시켜 복합도금을 진행하였다. 이 때 생기는 문제점은 공정조건을 개선하여 해결하였으며, 그 결과 우수한 내마모성의 Ni-Co/SiC 복합도금 방법을 제안하고자 하였다.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.05a
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• pp.31-31
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• 2015

본 연구는, TAB(Tape Automated Bonding)접속이나 Flip Chip 접속에 의한 패캐징을 실현시키기 위해, 실리콘 웨이퍼 표면에 구리 필러 및 주석 합금을 전기 도금법으로 형성하는 전기 접점용 범프에 관한 것이다. 본 연구에서는, 균일 범프 두께, 범프 표면의 균일화, 범프 내의 보이드 발생 문제 해결, 균일한 합금 조성 및 도금 속도의 고속화를 위해, Cu 도금액 및 Sn-Ag 도금액의 첨가제에 의한 표면 형상의 제어를 중심으로 그 성능에 대해 보고한다.

• Journal of the Korean institute of surface engineering
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• v.53 no.4
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• pp.190-199
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• 2020

Copper pyrophosphate baths were employed in order to study the dependencies of current efficiency, residual stress, surface morphology and microstructure of electrodeposited Cu thin layers on applied current density. The current efficiency was obtained to be more than about 90 %, independent of the applied current density. Residual stress of Cu electrodeposits was measured to be in the range of -30 MPa and 25 MPa with the increase of applied current density from 0.5 to 15 mA/㎠. Relatively smooth surface morphologies of the electodeposited Cu layers were obtained at an intermediate current range between 3 and 4 mA/㎠. The Cu electrodeposits showed FCC(111), FCC(200), and FCC(220) peaks and any preferred orientation was not observed in this study. The average crystalline size of Cu thin layers was measured to be in the range of 44~69 nm.

• Korean Chemical Engineering Research
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• v.47 no.2
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• pp.141-149
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• 2009

The Cu thin film material and process, which have been already used for metallization of CMOS(Complementary Metal Oxide Semiconductor), has been highlighted as the Cu metallization is introduced to the metallization process for giga - level memory devices. The recent progresses in the development of key elements in electrochemical processes like surface pretreatment or electrolyte composition are summarized in the paper, because the semiconductor metallization by electrochemical processes such as electrodeposition and electroless deposition controls the thickness of Cu film in a few nm scales. The technologies in electrodeposition and electroless deposition are described in the viewpoint of process compatibility between copper electrodeposition and damascene process, because a Cu metal line is fabricated from the Cu thin film. Silver metallization, which may be expected to be the next generation metallization material due to its lowest resistivity, is also introduced with its electrochemical fabrication methods.

• Korean Journal of Materials Research
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• v.11 no.5
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• pp.398-404
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• 2001

Effects of coating treatment of metallic Cu film on SiC for Al/SiC composite were studied. The Copper was deposited on SiC by electroless plating method. Al/sic composite was fabricated at temperature range of $670^{\circ}C$ to 90$0^{\circ}C$ under vacuum atmosphere. The wetting behavior of Al/SiC composite were analysed by SEM and XRD. The coating treatment on SiC improved wettability of Al melt on SiC considerably comparing to the non coated SiC. This improved wettability seems strongly concerned to the increase of chemical reactivity between coated layer and Al matrix. The improvement of wettability of Al melt on the Cu coated SiC was closely related to in the initial stage of reaction. The metallic film played an important role in reducing the interfacial free energy and breaking down the aluminum oxide film through the reaction with Al melt. The wetting behavior of the as-received SiC with Al melt was not uniform, indicated by the contact angles from less than $97^{\circ}$to more than $97^{\circ}$.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.05a
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• pp.136-137
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• 2009

전자파 차폐재로 메쉬를 제작하는 기존의 배치 방식은 복잡한 작업공정과 비싼 설비로 인해 생산원가 높다. 그래서 pulse reverse current를 이용하여 Cu mesh 도금을 하였다. 정펄스의 전류밀도가 $31mA/cm^2$일일 때 역펄스의 전류밀도 및 duty cycle에 상관없이 표면은 매끄럽게 나왔다. 정펄스의 전류밀도가 $454mA/cm^2$일때는 duty cycle이 25%이하는 표면상태가 매끄럽게 나타났지만 33%이상에서 표면상태가 거칠게 도금이 되었다.

• Proceedings of the KWS Conference
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• 2007.11a
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• pp.227-228
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• 2007

본 연구에서는 플립칩 범프를 형성하는 여러 가지 방법 중 전해도금을 이용하여 Sn-0.7wt%Cu 솔더 범프를 형성 하고자 하였다. 전류밀도에 따른 전류 효율을 알아보기 위하여 전류밀도에 따른 실험적 증착 속도와 이론적 속도를 비교 분석 하였다. 도금 두께는 FE-SEM(Field Emission Scanning Electron Microscope)을 이용하여 측정 하였으며 최종적으로 $20{\mu}m{\times}20{\mu}m{\times}10{\mu}m$ 크기에 $50{\mu}m$ 피치를 가지는 straight wall 형 Sn-0.7wt%Cu 솔더 범프를 형성하고자 하였다.