• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.293.1-293.1
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• 2016

Various materials including conductive, dielectric, and semi-conductive materials, constitute suitable candidates for printed electronics. Metal nanoparticles (e.g. Ag, Cu, Ni, Au) are typically used in conductive ink. However, easily oxidized metals, such as Cu, must be processed at low temperatures and as such, photonic sintering has gained significant attention as a new low-temperature processing method. This method is based on the principle of selective heating of a strongly absorbent film, without light-source-induced damage to the transparent substrate. However, Cu nanoparticles used in inks are susceptible to the growth of a native copper-oxide layer on their surface. Copper-oxide-nanoparticle ink subjected to a reduction mechanism has therefore been introduced in an attempt to achieve long-term stability and reliability. In this work, a flash-light sintering process was used for the reduction of an inkjet-printed Cu(II)O thin film to a Cu film. Using a photographic lighting instrument, the intensity of the light (or intense pulse light) was controlled by the charged power (Ws). The resulting changes in the structure, as well as the optical and electrical properties of the light-irradiated Cu(II)O films, were investigated. A Cu thin film was obtained from Cu(II)O via photo-thermal reduction at 2500 Ws. More importantly, at one shot of 3000 Ws, a low sheet resistance value ($0.2527{\Omega}/sq.$) and a high resistivity (${\sim}5.05-6.32{\times}10^{-8}{\Omega}m$), which was ~3.0-3.8 times that of bulk Cu was achieved for the ~200-250-nm-thick film.

• Korean Journal of Materials Research
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• v.17 no.12
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• pp.634-636
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• 2007

The texture and microstructure in Cu/Nb added ultra low carbon steels through the different thickness layer were studied after hot rolling. It was found that the two ultra low carbon steels all show the inhomogeneity of hot rolling texture and the Cu-added ultra low carbon steel was far more inhomogeneous than Nb-added one. In the center layer, the strong ${\alpha}\;fibre,\;{\gamma}\;fibre$ textures and the shear textures including 001<110>, 111<112> were founded. Near the surface, the ${\alpha}\;fibre$ texture and the orientation texture caused by a typical plane-strain deformation condition of bcc metals were observed.

• Korean Journal of Materials Research
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• v.24 no.10
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• pp.520-525
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• 2014

Effects of Cu and B on effective grain size and low-temperature toughness of thermo-mechanically processed high-strength bainitic steels were investigated in this study. The microstructure of the steel specimens was analyzed using optical, scanning, and transmission electron microscopy; their effective grain size was also characterized by electron back-scattered diffraction. To evaluate the strength and low-temperature toughness, tensile and Charpy impact tests were carried out. The specimens were composed of various low-temperature transformation products such as granular bainite (GB), degenerated upper bainite (DUB), lower bainite (LB), and lath marteniste (LM), dependent on the addition of Cu and B. The addition of Cu slightly increased the yield and tensile strength, but substantially deteriorated the low-temperature toughness because of the higher volume fraction of DUB with a large effective grain size. The specimen containing both Cu and B had the highest strength, but showed worse low-temperature toughness of higher ductile-brittle transition temperature (DBTT) and lower absorbed energy because it mostly consisted of LB and LM. In the B-added specimen, on the other hand, it was possible to obtain the best combination of high strength and good low-temperature toughness by decreasing the overall effective grain size via the appropriate formation of different low-temperature transformation products containing GB, DUB, and LB/LM.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2007.06a
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• pp.667-668
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• 2007

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.6
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• pp.376-380
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• 2017

In this paper, we prepared a metal alloy resistor with stable thermal electro motive force (thermal EMF) as well as a low temperature coefficient of resistance (TCR) by adjusting the manganese proportion from 3 to 12 wt% in the Cu-Mn-Ni alloy. Composition of the fabricated metal alloy was investigated using energy dispersive X-ray (EDX) analysis. The TCR of each sample was measured as 44.56, 40.54, 35.60, and 31.56 ppm for Cu-3Mn-2Ni, Cu-5Mn-2Ni, Cu-10Mn-2Ni, and Cu-12Mn-2Ni, respectively. All the resistor samples were available for the F grade (${\pm}1%$ of the allowable error of resistance) high-precision resistor. All the samples satisfied the baseline of high thermal EMF (under 3 mV at $60^{\circ}C$); however, Cu-3Mn-2Ni and Cu-5Mn-2Ni satisfied the baseline of low thermal EMF (under 0.3 mV at $25^{\circ}C$). We were thus able to design and fabricate the metal alloy resistor of Cu-3Mn-2Ni and Cu-5Mn-2Ni to have low TCR and stable thermal EMF at the same time.

• Transactions on Electrical and Electronic Materials
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• v.3 no.2
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• pp.24-27
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• 2002

The NdBaCuO superconductor samples were zone-melted in low oxygen partial pressure (1%O$_2$+99%Ar). The zone-melting temperature was decreased about 12$0^{\circ}C$ film 1,06$0^{\circ}C$, the zone-melting temperature in air. Thus the loss of liquid phase (BaCuO$_2$ and CuO) was reduced during: the zone-melting process. The content of non-superconducting phase Nd422 in zone-melted NdBaCuO samples was clearly decreased and, therefore, the substitution of Nd for Ba was occurred. The superconductivity of zone-melted Nd$_{1+x}$Ba$_{2-x}$Cu$_3$O$_{y}$ prepared under low oxygen partial pressure was distinctively improved.d.d.d.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.214.2-214.2
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• 2013

Device performance for the 45 and 32 nm node CMOS technology requires the integration of ultralow-k materials. To lower the dielectric constant for PECVD and spin-on materials, partial replacement of the solid network with air (k=1.01) appears to be more intuitive and direct option. This can be achieved introducting of second "labile" phase during depositoin that is removed during a subsequent UV curing and annealing step. Besides, with shrinking line dimensions the resistivity of barrier films cannot meet the International Technology Roadmap for Semiconductors (ITRS) requirements. To solve this issue self-forming diffusion barriers have drawn attention for great potential technique in meeting all ITRS requirments. In this present work, we report a Cu-V alloy as a materials for the self-forming barrier process. And we investigated diffusion barrier properties of self-formed layer on low-k dielectrics with or without UV curing treatment. Cu alloy films were directly deposited onto low-k dielectrics by co-sputtering, followed by annealing at various temperatures. X-ray diffraction revealed Cu (111), Cu (200) and Cu (220) peaks for both of Cu alloys. The self-formed layers were investigated by transmission electron microscopy. In order to compare barrier properties between V-based interlayer on low-k dielectric with UV curing and interlayer on low-k dielectric without UV curing, thermal stability was measured with various heat treatment temperature. X-ray photoelectron spectroscopy analysis showed that chemical compositions of self-formed layer. The compositions of the V based self-formed barriers after annealing were strongly dominated by the O concentration in the dielectric layers.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.144-147
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• 2003

Cu+ ions drift diffusion in formal oxide film and SiOCH film for interlayer dielectric is evaluated. The diffusion is investigated by measuring shift in the flatband voltage of capacitance/voltage measurements on Cu gate capacitors after bias temperature stressing. At a field of 0.2MV/cm and temperature $200^{\circ}C,\;300^{\circ}C,\;400^{\circ}C,\;500^{\circ}C$ for 10min, 30min, 60min. The Cu+ ions drift rate of $SiOCH(k=2.85{\pm}0.03)$ film is considerable lower than termal oxide. As a result of the experiment, SiOCH film is higher than Thermal oxide film for Cu+ drift diffusion resistance. The important conclusion is that SiOCH film will solve a causing reliability problems aganist Cu+ drift diffuion in dielectric materials.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.701-704
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• 2003

In this study, to develop the low temperature sintering ceramics for multilayer piezoelectric transformer, PSN-PNN-PZT system ceramics were manufactured as a function of CuO addition. Its dielectric and piezoelectric characteristics were investigated. With increasing the amount of CuO addition, grain size was increased and density increased until 0.3wt% CuO. Taking into consideration electromechanical coupling factor(kp) of 0.53, mechanical quality factor(Qm) of 423 and ${\epsilon}r$ of 1759, it can be cincluded that the CuO 0.5wt% added composition sintered at $920^{\circ}C$ is suitable for piezoelectric transformer application if Qm is improved.

• Journal of Nutrition and Health
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• v.41 no.8
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• pp.691-700
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• 2008

One suggested mechanism underlying copper (Cu) deficiency teratogenicity is a low availability of nitric oxide (NO), signaling molecule which is essential in developmental processes. Increased superoxide anions secondary to decreased activities of Cu-zinc superoxide dismutase (Cu-Zn SOD) in Cu deficiency can interact with NO to form peroxynitrite, which can nitrate proteins at tyrosine residues. In addition, peroxynitrite formation can limit NO bioavailability. We previously reported low NO availability and increased protein nitration in Cu deficient (Cu-) embryos. In the current study, we tested whether Cu deficiency alters downstream signaling of NO by assessing cyclic GMP (cGMP) and phosphorylated vasodilator-stimulating phosphoprotein (VASP) levels, and whether NO supplementation can affect these targets as well as protein nitration. Gestation day 8.5 embryos from Cu adequate (Cu+) or Cu- dams were collected and cultured in either Cu+ or Cu- media for 48 hr. A subset of embryos was cultured in Cu- media supplemented with a NO donor (DETA/NONOate; 20 ${\mu}M$) and/or Cu-Zn SOD. Cu-/Cu- embryos showed a higher incidence of embryonic and yolk sac abnormalities, low NO availability, blunted dose-response in NO concentrations to increasing doses of acetylcholine, low mRNA expression of endothelial nitric oxide synthase (eNOS), increased levels of 3-nitrotyrosine (3-NT) compared to Cu+/Cu+ controls. cGMP concentrations tended to be low in Cu-/Cu- embryos, and they were significantly lower in Cu-/Cu- yolk sacs than in controls. Levels of phosphorylated VASP at serine 239 (P-VASP) were similar in all groups. NO donor supplementation to the Cu- media ameliorated embryonic and yolk sac abnormalities, and resulted in increased levels of cGMP without altering levels of P-VASP and 3-NT. Taken together, these data support the concept that Cu deficiency limits NO availability and alters NO/cGMP-dependent signaling in Cu- embryos and yolk sacs, which contributes to Cu deficiency-induced abnormal development.