• Bulletin of the Korean Chemical Society
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• 제34권3호
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• pp.768-772
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• 2013

Layered mixed metal hydroxy double salts (HDS) with the formulas $(Cu_{0.75}Ni_{0.25})_2(OH)_3NO_3$ ((Cu, Ni)-HDS) and $Cu_2(OH)_3NO_3$ ((Cu, Cu)-HDS) were prepared via slow hydrolysis reactions of CuO with $Ni(NO_3)_2$ and $Cu(NO_3)_2$, respectively. The crystal structures, morphologies, bonding natures, and magnetic properties of (Cu, Ni)-HDS and (Cu, Cu)-HDS were characterized with X-ray diffraction (XRD), scanning electron microscopy (SEM), Fourier transformation infrared spectroscopy (FT-IR), thermogravimetric analysis (TGA), and a superconducting quantum interference device (SQUID). Even though (Cu, Ni)-HDS has a similar layered structure to that of (Cu, Cu)-HDS, the bonding nature of (Cu, Ni)-HDS is slightly different from that of (Cu, Cu)-HDS. Therefore, the magnetic properties of (Cu, Ni)-HDS are significantly different from those of (Cu, Cu)-HDS. The origin of the abnormal magnetic properties of (Cu, Ni)-HDS can be explained in terms of the bonding natures of the interlayer and intralayer structures.

• 한국재료학회지
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• 제21권10호
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• pp.550-555
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• 2011

A high-quality CIGS film with a selenization process needs to be developed for low-cost and large-scale production. In this study, we used $Cu_2In_3$, CuGa and $Cu_2Se$ sputter targets for the deposition of a precursor. The precursor deposited by sputtering was selenized in Se vapor. The precursor layer deposited by the co-sputtering of $Cu_2In_3$, CuGa and $Cu_2Se$ showed a uniform distribution of Cu, In, Ga, and Se throughout the layer with Cu, In, CuIn, CuGa and $Cu_2Se$ phases. After selenization at $550^{\circ}C$ for 30 min, the CIGS film showed a double-layer microstructure with a large-grained top layer and a small-grained bottom layer. In the AES depth profile, In was found to have accumulated near the surface while Cu had accumulated in the middle of the CIGS film. By adding a Cu-In-Ga interlayer between the co-sputtered precursor layer and the Mo film and adding a thin $Cu_2Se$ layer onto the co-sputtered precursor layer, large CIGS grains throughout the film were produced. However, the Cu accumulated in the middle of CIGS film in this case as well. By supplying In, Ga and Se to the CIGS film, a uniform distribution of Cu, In, Ga and Se was achieved in the middle of the CIGS film.

• Asian-Australasian Journal of Animal Sciences
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• 제19권8호
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• pp.1174-1178
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• 2006

An experiment was conducted to investigate the effects of dietary supplementation of copper chelates in the form of methionine, chitosan and yeast on the performance of laying hens. Four hundred ISA Brown layers, 84 wks old, were assigned to 4 treatments: control, 100 ppm Cu in methionine chelate (Met-Cu), 100 ppm Cu as chitosan chelate (Chitosan-Cu) and 100 ppm Cu as yeast chelate (Yeast-Cu). Each treatment had five replicates of 20 hens. Hen-day and hen-housed egg production and egg weight were significantly (p<0.05) increased by Met-Cu supplementation. The increase by Chitosan-Cu and Yeast-Cu supplementation was not significant. Contrast of the control vs. Cu chelates showed egg weight was significantly (p<0.05) increased by Cu chelate supplementation. Soft-shell egg production was significantly (p<0.05) reduced by supplementation of Cu chelates. Met-Cu treatment showed the lowest incidence of soft egg production. Gizzard erosion index was increased by Cu chelate supplementation. Crude fat in liver, total cholesterol in yolk and Cu content in liver and yolk were not significantly influenced by Cu chelate supplementation. It was concluded that dietary supplementation of 100 ppm Cu as Met-Cu significantly increased egg production and egg weight. Cu-Met chelate was also effective in reducing soft-shell egg production but increased gizzard erosion index.

• 청정기술
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• 제8권3호
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• pp.111-117
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• 2002

동을 담지한 모더나이트를 이용하여 고정층 연속흐름 반응기에서 NO 분해와 CO에 의한 NO 환원을 실시하였다. NO 분해에서는 많은 동함량에서 $Cu^{\circ}/HM$이 CuO/HM보다 높은 분해 활성을 나타내었다. 이것은 $Cu^{\circ}/HM$과 CuO/HM에 존재하는 $Cu^{2+}$이온의 양과 CuO의 환원성 등의 차이에 관련된다고 보인다. NO 환원에서는 적은 동함량에서 Cuo/HM이 CuO/HM보다 높은 환원 활성을 나타내었다. 이것은 $Cu^{\circ}/HM$과 CuO/HM에 존재하는 CuO의 환원성과 입자 크기 등의 차이에 관련된다고 보인다.

• Progress in Superconductivity
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• 제11권1호
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• pp.67-71
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• 2009

The effect of Cu substitution on the structural and superconducting properties of the $(Ru_{1-x}Cu_x)Sr_2(Eu_{1.34{\cdot}}Ce_{0.66})Cu_2O_z$ system with x = 0, 0.25 and 0.5 prepared under ambient pressure have been investigated. The X-ray diffraction patterns indicated that the Ru ions are replaced by the Cu ions. It is found that the Cu substitution for Ru significantly reduces the ferromagnetic component of field-cooled magnetic susceptibility, but results in a small change in diamagnetic onset transition temperature of zero-field-cooled magnetic susceptibility. In contrast to the Ru $Sr_2(Eu_{1.34{\cdot}}Ce_{0.66})Cu_2O_z$, bulk Meissner effect is observed in the field-cooled magnetization measurements of the Cu doped samples. The experimental results are discussed in connection with the spontaneous vortex phase interpretation.

• 한국결정성장학회지
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• 제16권4호
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• pp.166-171
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• 2006

층상 구조의 유기-무기 복합 소재 $Cu_2(OH)_3(CH_3COO){\cdot}H_2O$에 마이크로파를 조사하면서 $Cu_2O$와 Cu를 합성하였다. 에틸렌 글리콜에서는 $Cu_2(OH)_3(CH_3COO){\cdot}H_2O$이 환원이 되어서 Cu금속이 형성되는 반면에, 수용액에 글루코오스를 넣으면$Cu_2(OH)_3(CH_3COO){\cdot}H_2O$이 환원이 되어 $Cu_2O$가 형성되었다. 마이크로파 조사시간과 글루코오스의 농도가 $Cu_2O$의 입자의 생성과 성장에 미치는 영향을 확인하였다. 마이크로파의 조사시간이 길어질수록 $Cu_2O$의 입자는 수 ${\mu}m$의 구형에서 40nm의 지름을 가진 나노 선으로 변함을 확인하였다.

• 대한화학회지
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• 제57권4호
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• pp.483-488
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• 2013

$CuCl_2$로부터 용액합성법에 의해 CuO를 제조하였다. $CuCl_2$를 용액에 첨가하기 전에 용액내에 anatase형 $TiO_2$ 입자를 분산시켜 CuO가 형성되는 과정에서 $TiO_2$/CuO 결합입자를 합성하였다. 얻어진 $TiO_2$/CuO에 적당량의 글루코스를 가하여 반응시켜 CuO의 일부를 $Cu_2O$로 환원시켰다. 얻어진 시료 $TiO_2/Cu_xO$ (1$TiO_2/Cu_xO$ 복합체는 anatase와는 다르게 가시광선 전 영역에서 흡광이 발생했으며 당연한 결과로 태양광선에서 $TiO_2/Cu_xO$ 복합체의 광촉매 활성은 anatase $TiO_2$에 비하여 매우 뛰어난 것으로 나타났다. 또한 $TiO_2/Cu_xO$ 복합체의 항균성이 대단히 뛰어난 것으로 나타났다.

• 한국세라믹학회지
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• 제35권1호
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• pp.55-65
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• 1998

Ag-36.8a%Cu-7.4at%Ti 조성의 브레이징 합금을 Si3N4 기판위에 브레이징한 후 브레이징 합금의 산화거동을 대기중 400, 500, 600$^{\circ}C$에서 조사하였다. 브레이징 합금의 구성원소인 Ag는 산화되지 않고 Cu와 Ti가 산화되며, 산화거동은 포물선적 산화법칙을 따랐다. 브레이징 합금의 산화에 따른 활성화에너지는 80kj/ mol 으로서 소량 첨가된 활성원소인 Ti에 의하여 순수한 Cu의 산화시 활성화에너지보다 감소하였다. 산화 초기에 생성되는 외부산화물은 Cu이온의 외부확산에 의해 성장이 지배되는 Cu산화물로 구성되어 있었다. 산화기간이 경과함에 따라 외부산화물층 아래에서 Cu의 농도는 감소되고 Ag의 농도는 증가하는 농도구배가 발생하여, 브레이징 합금의 산화물은 Cu산화물층(CuO)/Ag잉여층/Cu산화물층(Cu2O)/Ag잉여층의 다층구조를 갖았다. 또한, 분위기중의 산소는 Cu산화물 및 Ag잉여층을 통해 브레이징 합금 내부로 확산되어 브레이징 합금내의 Ti와 반응하여 내부산화물 TiO2를 생성하였다.

• Bulletin of the Korean Chemical Society
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• 제12권6호
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• pp.606-612
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• 1991

We have carried out an extended Huckel calculation to rationalize the role of $CuO_3$ chains and the size effect of the charged model clusters for the following charged model culsters : ${{Cu_6}{O_{21}}^{28-},\;{{Cu_6}{O_{22}}^{30-}\;,{{Cu_9}{O_{30}}^{39-}\;,{{Cu_9}{O_{32}}^{43-}\;,{{Cu_{12}{O_{38}}^{48-}\;,{{Cu_{15}{O_{50}}^{65-}\;,{{Cu_{18}{O_{54}}^{66-}\;,{{Cu_{18}{O_{55}}^{68-}\;,{{Cu_{24}{O_{70}}^{84-}\;and\;{{Cu_{27}{O_{78}}^{93-}$ for high-$T_c$ superconductor $YBa_2Cu_3O_7$: ${{Cu_6}{O_{18}}^{22-}\;,{{Cu_9}{O_{26}}^{31-}}\;,{{Cu_{12}{O_{32}}^{36-}\;,{{Cu_{15}{O_{42}}^{49-}\;,{{Cu_{18}{O_{46}}^{50-}\;,{{Cu_{24}{O_{60}}^{64-}\;and\;{{Cu_{27}{O_{66}}^{69-}$ for insulator $YBa_2Cu_3O_6$. The results show that the electronic structures and properties of the charged model clusters relating to high-$T_c$ superconductor are very sensitive to the size change of the clusters with various environmental effects, wherease those of the charged model clusters for insulator $YBa_2Cu_3O_6$ are monotonous to the size change. The $CuO_3$ chains along the b-direction may yield cooperative electronic coupling with the $CuO_2$ layers in determining both conducting and superconducting properties of $YBa_2Cu_3O_{7-x}$ system.

• 한국재료학회지
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• 제17권8호
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• pp.402-407
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• 2007

In electronics manufacturing processes, soldering process has generally been used in surface mounting technology. Because of environmental restriction, lead free solders as like a SnAgCu ternary system are being used widely. After soldering process, the formation and growth of intermetalic compounds(IMCs) are formed in the interface between solder and Cu substrate as follows isothermal temperature and time. In this studies, therefore, we investigated the effects of the Cu substrate thickness on the IMC formation and growth of Sn-40Pb/Cu and Sn-3.0Ag-0.5Cu/Cu solder joints, respectively. The effect of the Cu thickness in PCB Cu pad and pure Cu plate was analyzed as measuring of thickness of each IMC. After solder was soldered on PCB and Cu plate which have different Cu thickness, we measured the IMC thickness in solder joints respectively. Also we compared with the effectiveness of Cu thickness on the IMC growth. From these results, we calculated the activation energy.