• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2001.11a
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• pp.171-177
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• 2001

The adhesion enhancement from inserting a RF bias-sputtered Cr layer between Cu and polyimide (PI) has been studied. The RF bias power applied in this study was ranged from 0 to 400 W. Without the RF bias, the peel strength, which measures the adhesion strength, was nearly o g/mm. As the RF power was increased, the peel strength rose up to ~130 g/mm at 200 W, which remained constant with further increase of the RF bias power. Cross-sectional transmission electron microscopy(TEM) was used to investigate the interfacial reaction between the Cr film and PI substrate during the bias sputtering. The Cr/PI interface without the application of RF dais showed a clean, sharp interface while the RF raised Cr/PI interface had about 10~30 nm thick atomistically mixed interlayer between the metal film and PI substrate. This interlayer appeared to have resulted from the implantation of high energy adatoms during the RF bias sputtering of Cr film. This mixed layer serves as an interlocking layer, which enhances adhesion between the metal and PI layers.

• Journal of Welding and Joining
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• v.25 no.2
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• pp.76-81
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• 2007

Solder bumps have been used to interconnect the chip and substrate, and the size of the solder bump decreases below $100{\mu}m$ to accommodate higher packaging density. In order to fabricate solder bumps, a mold to chip transfer process is suggested in this work. Since the thin stainless steel mold is not wet by the solder, the molten solder is forced to fill the mold cavities with ultrasonic vibration. The solders within the mold cavities are transferred to the Cu pads on the polyimide film through reflow soldering.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1395-1396
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• 2008

본 논문에서는 초소형 DC-DC 컨버터에 쓰이는 파워인덕터를 설계하였다. 제안된 인덕터는 Ni-Zn 페라이트와 Polyimide 혼합물질을 이용하여, 경화온도를 낮추어 유기기판(FR-4)에서도 적용될 수 있는 인덕터를 설계했다. 인덕터의 크기는 $5mm{\times}4.5mm{\times}0.5mm$ 이고, 도선의 물질은 구리(Cu)를 사용하였으며, 18${\mu}m$의 두께, 85${\mu}m$의 선폭, 85${\mu}m$의 선 간격으로 디자인 하였다. 그리고 구조는 2층 적층의 스파이럴 구조를 제안하여 소형화에 보다 유리하도록 설계를 하였다. 페라이트 혼합물질을 샌드위치 타입으로 EMI shielding한 인덕터의 경우 동작 주파수 5MHz에서 912nH의 인덕턴스, 29의 품질계수 특성을 나타냈으며, 그 결과 초소형 DC-DC 컨버터용 인덕터로서 소형화와 높은 효율을 만족하였다.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.11a
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• pp.166-168
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• 2007

스퍼터링법으로 제작된 FCCL은 PI필름(Poly-imide film)과 Cu layer사이에 Tie-coating layer로 Ni-Cr을 많이 사용한다. 하지만 완성된 FCCL에서 페터닝을 실시할 때 Cr성분이 소멸되지 않고 잔존하는 현상으로 누설전류가 발생 한다. 또한 Cr으로 인해 Eatching액의 오염으로 재사용의 어려움도 발생된다. 이러한 원인들은 제품의 특성들을 저하 시키므로 이를 개선할 필요가 있다. 따라서 본 연구에서는 기존의 Tie-coating layer를 대체할 물질로 Acrylic acid를 이용하여 FCCL을 제작하여 표면특성 평가를 위해 Contact angle측정과 부착력을 위한 Peel test측정과 조직분석 및 성분분석을 위해 SEM-EDS를 측정을 통하여 Polymerization을 이용한 Ti-coating layer 개발의 가능성을 확인하였다.

• Korean Journal of Materials Research
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• v.17 no.10
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• pp.509-515
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• 2007

In order to fabricate adhesiveless 2-layer flexible copper clad laminate (FCCL) used for COF (chip on film) with high peel strength, polyimide (PI; Kapton-EN, $38\;{\mu}m$) surface was modified by reactive $O_2^+$ and $N_2O^+$ ion beam irradiation. 300 mm-long linear electron-Hall drift ion source was used for ion irradiation with ion current density (J) higher than $0.5\;mA/cm^2$ and energy lower than 200 eV. By vacuum web coating process, PI surface was modified by linear ion source and then 10-20 nm thick Ni-Cr and 200 nm thick Cu film were in-situ sputtered as a tie layer and seed layer, respectively. Above this sputtered layer, another $8-9{\mu}m$ thick Cu layer was grown by electroplating and subsequently acid and base resistance and thermal stability were tested for examining the change of peel strength. Peel strength for the FCCLs treated by both $O_2^+$ and $N_2O^+$ ion irradiation showed similar magnitudes and increased as the thickness of tie layer increased. FCCL with Cu (200 nm)/Ni-Cr (20 nm)/PI structure irradiated with $N_2O^+$ at $1{\times}10^{16}/cm^2$ ion fluence was proved to have a strong peel strength of 0.73 kgf/cm for as-received and 0.34 kgf/cm after thermal test.

• Journal of the Korean Vacuum Society
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• v.16 no.2
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• pp.79-90
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• 2007

Prototype of $800{\ell}$ vacuum web coater (Vic Mama) consisting of ion source with low energy less than 250 eV for high speed surface modification and 4 magnetron sputter cathodes was designed and constructed. Its performance was evaluated through fabricating the adhesiveless flexible copper clad laminate (FCCL). Pumping speed was monitored in both upper noncoating zone pumped down by 2 turbo pumps with 2000 l/sec pumping speed and lower surface modification and sputter zone vacuumed by turbo pumps with 450 1/sec and 1300 1/sec pumping speed respectively. Ion current density, plasma density, and uniformity of ion beam current were measured using Faraday cup and the distribution of magnetic field and erosion efficiency of sputter target were also investigated. With the irradiation of ion beams on polyimide (Kapton-E, $38{\mu}m$) at different fluences, the change of wetting angle of the deionized water to polyimide surface and those of surface chemical bonding were analyzed by wetting anglometer and x-ray photoelectron spectroscopy. After investigating the deposition rate of Ni-Cr tie layer and Cu layer was investigated with the variations of roll speed and input power to sputter cathode. FCCL fabricated by sputter and electrodeposition method and characterized in terms of the peel strength, thermal and chemical stability.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.60-60
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• 2000

The adhesion interface formation between copper and poly(ethylene terephthalate)(PET), poly(methyl methacrylate)(PMMA) and Polyimide films was treated using Ion assisted reaction system to sequential sputter deposition by High-Frequency ion source. The ion beam modification system used a new type of low power HF ion thruster for space application as new low thruster electric propulsion system. Low power HF ion thruster with diameter 100mm gives the opportunity to obtain beams of Ar+ with currents 20~150 mA (current density 0.5~3.5 mA/cm2) and energy 200~2500eV at HF power level 10~150 W. Using Ar as a working gas it is possible to obtain thrust within 3~8 mN. Contact angles for untreated films were over 95$^{\circ}$ and 80 for Pet, 10o for PMMA and 12o for PI samples as a condition of ion assisted reaction at the ion dose of 10$\times$1016 ions/cm2, the ion beam potential of 1.2 keV and 4 ml/min for environmental gas flow rate. 900o peel tests yielded values of 15 to 35 for PET, 18 to 40 and 12 to 36 g/min. respectively. High resolution X-ray photoelectron spectrocopy is the Cls region for Cu metal on these polymer substrates showed increases in C=O-O groups for polymide, whereas PET and PMMA treated samples showed only C=O groups with increase the ion dose. Finally, unstable polymer surface can be changed from hydrophobic to hydrophilic formation such as C-O and C=O that were confirmed by the XPS analysis, conclusionally, the ion assisted reaction is very effective tools to attach reactive ion species to form functional groups on C-C bond chains of PET, PMMA and PI.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.346-346
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• 2008

최근 디지털 컨버젼스에 의해서 정보 단말기 network가 디지털 기술을 기반으로 유기적으로 융 복합화 되고 있으며 BT, NT, ET, IT의 융합 기술의 필요성이 점차적으로 증대되고 있다. 이러한 환경 하에서 다양한 정보 및 서비스의 송신 및 수신이 가능한 휴대 단말기의 필요성에 부응하여 기존의 전화 기능, 카메라, DMB 이외에도 홈 네트워크, mobile internet 등 더욱 다양한 기능들이 요구되고 있다. 종래에는 수동 부품과 능동 부품의 실장을 별개로 추진했으나 최근에는 수동 및 능동 부품을 하나의 패키지 내에 실장 가능하도록 하는 3-D Integration을 추진하고 있다. 지금까지 여러 부품들을 실장 시키기 위한 공정들의 대부분은 높은 온도에서 공정이 이루어졌으나 여러 부품들을 손상 없이 집적화하고 실장하기 위해서는 저온화 공정이 필요하다. 최근 많은 저온 공정 중에서 Aerosol Deposition Method는 상온에서 세라믹 후막을 성막할 수 있어 가장 주목받고 있는 공정중의 하나이다. 본 연구에서는 3-D Integration을 실현하기 위해 이종 접합에 유리하고 상온에서 성막 공정이 이루어지는 Aerosol Deposition Method를 이용하여 금속 기판 위에 금속, 폴리머, 세라믹 후막을 성막시켰다. 기판 재료로는 Cu 기판을 사용하였으며 출발 파우더로는 Polyimide 파우더와 $Al_2O_3$ 파우더, Ag 파우더를 사용하였으며 이종 접합간의 메커니즘의 양상을 보기 위해 같은 조건에서 이종 접합간의 성막률을 비교하였으며 FE-SEM으로 미세 구조를 관찰하였다. 또한 기판의 표면 거칠기에 따른 메커니즘의 양상을 연구하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.3
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• pp.163-168
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• 2020

We studied the change of photovoltaic properties of a flexible CuIn_xGa(_1-x)Se₂ (CIGS) solar cell fabricated on polyimide by mechanical bending with curvature radii of 75 mm (75R) and 20 mm (20R). The flexible CIGS cells were flattened on a PET film, then placed and forced against the surface of a curved block fabricated with pre-designed curvatures. Both up (compressive) and down (tensile) bending were applied to a specimen of CIGS on PET with curvatures of 75R and 20R for 10,000 times and 2,000 times, respectively. From J-V measurements, we found that the conversion efficiency (Eff.) was reduced by 3% and 4% for up-and down-bending, respectively, at curvature 75R; it was greatly reduced by 15% for curvature 20R in the up-bending. However, the open circuit voltage (V_oc) and short-circuit current density (J_sc) seemed to change little, within 3%, for the applied mechanical stresses. The degradation in Eff. resulted from the deterioration of the series (R_s) and shunt (R_sh) resistances of the solar cell.

• Korean Journal of Materials Research
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• v.16 no.11
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• pp.710-714
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• 2006

The purpose of this study is to identify the effect of additives and composition on copper surface morphology and mechanical characteristics by copper electrodeposition. Additives such as hydroxy ethyl cellulose(HEC), chloride ion were used in this study. Electrochemical experiments allied to SEM, XRD, AFM and four- point probe were performed to characterize the morphology and mechanical characters of copper in the presence of additives. Among various electrodeposition conditions, the minimum surface roughness of copper foil was obtained when electrodeposited at the current density of 200 mA/$cm^2$ for 68 seconds with 2 ppm of HEC. The minimum value of surface roughness(Rms) was 107.6 nm. It is copper foil is good for electromigration inhibition due to preferential crystal growth of Cu (111) deposited in the electrolyte containing chloride ions(10 ppm) and HEC(1 ppm).