• 한국전기전자재료학회논문지
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• 제13권6호
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• pp.472-477
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• 2000

Oxides of the form Mn$_{4}$/O$_{4}$-CuO-Co$_{3}$/O$_{4}$-NiO-ZnO present properties that make them useful as power NTC thermistor for current limited. Electrical properties of Mn$_{3}$/O$_{4}$-CuO-Co$_{3}$/O$_{4}$-CuO-Co$_{3}$/O$_{4}$-NiO-ZnO power NTC thermistor such as I-V characteristics tim constant activation energy and heat dissipation coefficient measured as a function of temperature and composition. In Mn$_{4}$/O$_{4}$-CuO-Co$_{3}$/O$_{4}$-NiO-ZnO system with the 5wt% addition of Co$_{3}$/O$_{4}$ it can be seen that resistivity and B-constant were increased as the ratio of ZnO/Mn$_{3}$/O$_{4}$ was increased. Heat dissipation constant, I-V characteristics and time constant showed similar behaviour compared with those of conventional thermistors. In particular resistance change ratio ($\Delta$R) the important factor for reliability varied within $\pm$5% indicating the compositions of these products could be available for power thermistor.

• 신재생에너지
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• 제3권4호
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• pp.54-62
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• 2007

In this paper, we report the research highlight on the preparation and characterization of Indium-free $Cu_2ZnSnSe_4$ and Indium-reduced $CulnZnSe_2$ thin films in order to seek the viability of these absorber materials to be applied in thin film solar cells. The films of $Cu_2ZnSnSe_4\;and\;CulnZnSe_2$ were prepared using mixed binary chalcogenides powders. It was observed that Cu concentration was a function of substrate temperature as well as CuSe mole ratio in the target. Under an optimized condition, $Cu_2ZnSnSe_4\;and\;CulnZnSe_2$ thin films grew with strong [112]. [220/204] and [312/116] reflections. Both $Cu_2ZnSnSe_4\;and\;CulnZnSe_2$ films were found to exhibit a high absorption coefficient of $104^4cm^{-1}\;Cu_2ZnSnSe_4$ film showed a band gap of 1.5eV which closes to the optimum band gap of an ideal solar absorber for a solar cell. On the other side, an increase of optical band gap from 1.0 to 1.25eV was found to be proportional with an increase of Zn concentration in the $CulnZnSe_2$ film. All films in this study revealed a p-type semiconductor characteristic.

• 한국자기학회지
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• 제5권5호
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• pp.556-560
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• 1995

The absorption properties of Cu-Zn ferrite/rubber composite microwave absorbers with PZT(Lead Zirconate Titanate) additive were evaluated. The composite specimens have prepared by molding and curing the mixture of matrix rubber and Cu-Zn ferrite powders which are synthesized by the coprecipitation method using Fe Cl/sub 3/ .center dot. 6H/sub 2/O, CuCl/sub 2/ .center dot. 2H/sub 2/O and Zn Cl/sub 2/ as a starting raw materials. PZT is used as another filler particles to adjust the material constants of Cu-Zn ferrite/rubber composite specimens. We have found that the material constants of specimens could be controlled by various PZT mixing ratio. On the Cu-Zn ferrite/rubber composite specimens with PZT 10[wt%] additive, the reflection losses were larger than 30[dB] in the frequency range from 2.72 to 4.4[GHz]' by adjusing the thickness.

• Bulletin of the Korean Chemical Society
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• 제35권1호
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• pp.189-196
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• 2014

Water dispersible ZnS based nanocrystals: ZnS (blue), ZnS:Cu (green) and ZnS:Mn (yellow-orange) were synthesized by capping the surface of the nanocrystals with a mercaptopropionic acid (MPA) molecule. The MPA capped ZnS based nanocrystal powders were characterized by using XRD, HR-TEM, EDXS, FT-IR, and FT-Raman spectroscopy. The optical properties of the colloidal nanocrystals were also measured by UV/Vis and photoluminescence (PL) spectroscopies in aqueous solvents. The PL spectra showed broad emission peaks at 440 nm (ZnS), 510 nm (ZnS:Cu) and 600 nm (ZnS:Mn), with relative PL efficiencies in the range of 4.38% to 7.20% compared to a reference organic dye. The measured average particle sizes from the HR-TEM images were in the range of 4.5 to 5.0 nm. White light emission was obtained by mixing these three nanocrystals at a molar ratio of 20 (ZnS):1 (ZnS:Cu):2 (ZnS:Mn) in water. The measured color coordinate of the white light was (0.31, 0.34) in the CIE chromaticity diagram, and the color temperature was 5527 K.

• 한국재료학회지
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• 제28권10호
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• pp.578-582
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• 2018

ZnO crystals with different morphologies are synthesized through thermal evaporation of the mixture of Zn and Cu powder in air at atmospheric pressure. ZnO crystals with wire shape are synthesized when the process is performed at $1,000^{\circ}C$, while tetrapod-shaped ZnO crystals begin to form at $1,100^{\circ}C$. The wire-shaped ZnO crystals form even at $1,000^{\circ}C$, indicating that Cu acts as a reducing agent. As the temperature increases to $1,200^{\circ}C$, a large quantity of tetrapod-shaped ZnO crystals form and their size also increases. In addition to the tetrapods, rod-shaped ZnO crystals are observed. The atomic ratio of Zn and O in the ZnO crystals is approximately 1:1 with an increasing process temperature from $1,000^{\circ}C$ to $1,200^{\circ}C$. For the ZnO crystals synthesized at $1,000^{\circ}C$, no luminescence spectrum is observed. A weak visible luminescence is detected for the ZnO crystals prepared at $1,100^{\circ}C$. Ultraviolet and visible luminescence peaks with strong intensities are observed in the luminescence spectrum of the ZnO crystals formed at $1,200^{\circ}C$.

• 대한화학회지
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• 제33권5호
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• pp.558-567
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• 1989

여러가지 조성비로 만든 Cu/ZnO계 촉매로 이산화탄소를 수소화시켜 메탄올을 합성하였다. 촉매제조시 각 성분의 조성비가 촉매활성에 미치는 영향을 조사하고 반응촉매에 대하여 표면적 측정(BET), 주사전자현미경 측정(SEM), X선회절분석(XRD), X선광전자분석(XPS) 등을 실시하여, 각 촉매의 촉매특성을 조사하고 촉매활성과의 연관성을 연구하였다. 반응생성물은 메탄올과 일산화탄소 뿐이었는데 메탄올의 생성은 CuO의 함량이 증가하면 그에 따라 점차 증가하였으나 CuO:ZnO의 조성비율이 30:70일 경우에 최대이었고, CuO가 70 이상이면 급격하게 감소하였다. 촉매에 대한 SEM 측정과 BET 측정결과에서 확인된 바와 같이 이점은 미세결정크기가 증가되고 표면적이 감소하는 점과 일치되었다. 또 XPS 측정결과에서 촉매표면상에서의 Cu의 농도는 Cu/Cu+Zn(atomic ratio)을 비교할 때 CuO의 함량이 50% 이상인 경우에서 현저히 감소하였다. 그리고 각 촉매들의 $Cu(2P^3)$에 대한 결합에너지의 수치상의 값은 거의 같았으나 환원된 상태의 $Cu(2P^3)$의 결합에너지는 소성된 상태의 것과 비교하여 낮아졌고, 표면에 분포된 Cu 는 대부분 $Cu^{\circ}$로 확인되었으며 CuO:ZnO의 조성이 30:70인 경우에서 최대가 되었다. 이것은 또한 CuO의 조성비율이 30인 때에 메탄올생성이 최대라는 실험결과와도 잘 일치하였다. 그리고 환원된 각각의 촉매로 펄스(pulse)형태의 반응기에서 이소프로판올을 분해시킨 결과 아세톤의 생성율이 프로필렌보다 컸음으로 이들은 염기성이 상대적으로 강한 촉매라고 추측하였다.

• 한국초지조사료학회지
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• 제24권3호
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• pp.193-200
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• 2004

Orchardgrass 및 white clover에서 미량요소 Fe, Mn, Cu 및 Zn의 systematic variation 시비가 목초의 생육, 개화, 수량 및 양분 함량 등에 미치는 영향 등을 구명하였다. 다량요소 양분을 동일량 시비한 조건에서 시험군-1(Fe/Cu), 시험군-2(Mn/Zn), 시험군-3(Fe+Cu/Mn+Zn)의 처리내용은 시험군별 처리양분의 총 시비량($100\%$)을 systematic variation 방법으로 각각 0/100, 25/75, 50/50, 75/25, $100/0\%$ 비율로 나누어 시비처리 하였고, 시험군-4(Fe/Mn/Cu/Zn)에서는 각 기준양분 $70\%$, 기타 양분은 각각 $10\%$(합계 $100\%$) 비율로 시비처리 하였다. 1. 일반적으로 처리별 수량에 미치는 영향은 초종간 큰 차이를 보였으며 white clover는 orchardgrass 보다 더 크게 영향을 받았다. white clover의 처리별 수량변화는 뿌리/근류의 생육 및 개화특성 등과 연관성을 보였다(I보). 2. Fe/Cu 비율시험에서 orchardgrass의 수량은 $100/0\%$ 처리에서, white clover는 75/25 처리에서 다소 높은 수량을 보였다. 또한 white clover의 양호한 생육과 수량은 Cu 비율에 더 크게 영향을 받았고 orchardgrass는 Fe 비율에 더 영향을 받는 경향 이였다. 3. Mn/Zn 비율시험에서 두 초종 공히 높은 Mn 비율에서 양호한 수량을 보였다. 그러나 Mn-결핍조건에서는 white clover가 orchardgrass보다 상대적으로 더 수량감소를 보였다. 이에 비해서 Zn-함량의 변화와 이의 수량에 미치는 영향은 경미하였다. 4. Fe+Cu/Mn+Zn 비율시험에서 orchardgrass는 처리간 수량 차이가 경미하였다. white clover는 orchardgrass에 비해서 처리별 수량차이가 크게 나타났다. 75/25 처리에서 높은 수량을 보였으며 100/0 처리에서는 후반기에 심한 수량감소를 나타냈다. Fe/Mn/Cu/Zn 비율시험에서 white clover는 Cu와 Zn 처리에서 다소 양호한 수량을 보였고 이는 아마도 균형된 Fe/Mn 비율과도 연관된 것으로 보였다.

• Current Photovoltaic Research
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• 제3권3호
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• pp.75-79
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• 2015

Recently, $Cu_2ZnSn(S_xSe_{1-x})_4$ (CZTSSe) has been received a tremendous attraction as light absorber material in thin film solar cells (TFSCs), because of its earth abundance, inexpensive and non-toxic constituents and versatile material characteristics. Kesterite CZTSSe thin films were synthesized by sulfo-selenization of sputtered Cu/Sn/Zn stacked metallic precursors. The sulfo-selenization of Cu/Sn/Zn stacked metallic precursor thin films has been carried out in a graphite box using rapid thermal annealing (RTA) technique. Annealing process was done under sulfur and selenium vapor pressure using Ar gas at $520^{\circ}C$ for 10 min. The effect of tuning Se/(S+Se) precursor composition ratio on the properties of CZTSSe films has been investigated. The XRD, Raman, FE-SEM and XRF results indicate that the properties of sulfo-selenized CZTSSe thin films strongly depends on the Se/(S+Se) composition ratio. In particular, the CZTSSe TFSCs with Se/(S+Se) = 0.37 exhibits the best power conversion efficiency of 4.83% with $V_{oc}$ of 467 mV, $J_{sc}$ of $18.962mA/cm^2$ and FF of 54%. The systematic changes observed with increasing Se/(S+Se) ratio have been discussed in detail.

• Advances in nano research
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• 제5권3호
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• pp.193-201
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• 2017

ZnO, ZnO: Cu, Ga, and ZnO: Cu, Ga, Ag thin films were obtained by oxidization of ZnS and ZnS: Cu, Ga films deposited onto glass substrates by electron-beam evaporation from ZnS and ZnS: Cu, Ga targets and from ZnS: Cu, Ga film additionally doped with Ag by the closed space sublimation technique at atmospheric pressure. The film thickness was about $1{\mu}m$. The oxidation was carried out at $600-650^{\circ}C$ in air or in an atmosphere containing water vapor. Structural characteristics were investigated by X-ray diffraction (XRD) and atomic force microscopy (AFM). Photoluminescence (PL) spectra of the films were measured at 30-300 K using the excitation wavelengths of 337, 405 and 457.9 nm. As-deposited ZnS and ZnS: Cu, Ga films had cubic structure. The oxidation of the doped films in air or in water vapors led to complete ZnO phase transition. XRD and AFM studies showed that the grain sizes of oxidized films at wet annealing were larger than of the films after dry annealing. As-deposited doped and undoped ZnS thin films did not emit PL. Shape and intensity of the PL emission depended on doping and oxidation conditions. Emission intensity of the films annealed in water vapors was higher than of the films annealed in the air. PL of ZnO: Cu, Ga films excited by 337 nm wavelength exhibits UV (380 nm) and green emission (500 nm). PL spectra at 300 and 30 K excited by 457.9 and 405 nm wavelengths consisted of two bands - the green band at 500 nm and the red band at 650 nm. Location and intensities ratio depended on the preparation conditions.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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• pp.85.2-85.2
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• 2010

$Cu_2ZnSnSe_4$ (CZTSe) is one of candidate to alternate $Cu(In,Ga)Se_2$ as solar absorber material for solar cell. The expensive elements of In and Ga are replaced by Zn and Sn, respectively to lower the material cost. In this study we fabricated CZTSe thin film by selenization of single precursor layer consisted metallic constituent. Precursor compositions ratio were selected to have Cu-poor and Zn-rich content and prepared by RF magnetron sputtering. Thermal processing was applied to introduce selenium into as-deposited films at temperatures ranging from 350 to 500 for time up to 120 minutes. Single precursor films showed amorphous structure and consist of individual elements of Cu, Zn, and Sn. It was confirmed by XRD analysis that synthesis of CZTSe compound is occurred from lower temperature process, although concurrently additional phases such as binary cooper selenides are also existed. The quality of CZTSe crystal was improved as temperature increased. We also investigated the optical and electrical properties of as-selenized CZTSe as well.