• 한국표면공학회지
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• 제46권2호
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• pp.75-79
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• 2013

A one-step route was developed to fabricate $Cu(In,Ga)Se_2$ (CIGS) thin films by radio frequency (RF) magnetron sputtering from a single quaternary $CuIn_{0.75}Ga_{0.25}Se_2$ target. The effects of the substrate temperatures on the structural and electrical properties of the CIGS layers were investigated by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), energy dispersive X-ray spectroscopy (EDS) and Hall effect measurements. All the deposited films showed a preferential orientation along the (112) direction. The films deposited at $300^{\circ}C$ and $400^{\circ}C$ revealed that chalcopyrite main (112) peak and weak prominent peaks of (220)/(204) and (312)/(116), indicating polycrystalline structures. The element ratio of the deposited film at $300^{\circ}C$ were almost the same as the near-optimum value. The carrier concentration of the films decreased with increasing substrate temperatures.

• 한국태양에너지학회:학술대회논문집
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• 한국태양에너지학회 2012년도 춘계학술발표대회 논문집
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• pp.400-403
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• 2012

$Cu_2ZnSnSe_4$(CZTSe) is emerged as a promising material for thin-film solar cells because of non-toxic, inexpensive and earth abundant more than $Cu(In,Ga)Se_2$ materials. For fabricating compound semiconductor thin-film solar cells, CdS is widely used for a buffer layer which fabricated by a chemical bath deposition method (CBD). Through the experiment, we controlled deposition temperature and mol ratio of solution conditions to find the proper grain 크기 and exact composition. The optimum CdS layers were characterized in terms of surface morphology by using a scanning electron microscope (SEM) and atomic force microscope (AFM). The optimized CdS layer process was applied on CZTSe thin-films. The thickness of buffer layer related with device performance of solar cells which controlled by deposition time. Local surface potential of CdS/CZTSe thin-films was investigated by Kelvin probe force microscopy (KPFM). From these results, we can deduce local electric properties with different thickness of buffer layer on CZTSe thin-films. Therefore, we investigated the effect of CdS buffer layer thickness on the CZTSe thin-films for decreasing device losses. From this study, we can suggest buffer layer thickness which contributes to efficiencies and device performance of CZTSe thin-film solar cells.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.314.2-314.2
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• 2013

CIGS 박막의 물성은 조성에 크게 영향을 받으며, 특히 박막 내 Cu/(In+Ga) 비는 매우 중요한 변수로서 태양전지 특성에 영향을 주게 된다. Cu(In1-xGax)Se2 박막의 전하농도 및 반도체로의 성격을 가장 명확하게 결정하는 조성비는 Cu/(In+Ga) 비이다. 태양전지와 같은 소자로 작용하기 위해서는 Cu/(In+Ga) 비가 1보다 작아야 한다. 고효율의 태양전지는 Cu/(In+Ga)조성이 0.85~0.95로 slightly Cu-poor가 되어야 만들어진다. 본 연구에서는 Cu조성에 따른 CIGS 박막의 구조적, 전기적 특성과 CIGS 태양전지 효율 특성에 관하여 연구하였다. 미세구조 분석결과 Cu 조성이 증가함에 따라 큰 결정립을 가지며 결정립의 성장이 고르게 되어 접합 형성을 좋게 하는 경향을 보였다. X선 회절 분석결과, Cu 함유량 비율이 증가하면서 <112>의 우선배향성에서 <220/204>으로 변화하였다. 그러나, Cu/(In+Ga) 비율이 1이상이 첨가됨에 따라 우선배향은 다시 <112>로 변화함을 알 수 있었다. EDX 분석결과 Ga/(In+Ga) 0.31, Cu/(In+Ga) 0.86의 비율일 때, Carrier density $1.49{\times}1016$ cm-3을 나타내었다. CIGS의 태양전지의 효율 측정결과 Voc=596mV, Jsc=37.84mA/cm2, FF=72.96%로 ${\eta}$=16.47%를 달성하였다.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2009년도 춘계학술대회 논문집
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• pp.85-87
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• 2009

Despite the success of $Cu(In,Ga)Se_2$ (CIGS) based PV technology now emerging in several industrial initiatives, concerns about the cost of In and Ga are often expressed. It is believed that the cost of those elements will eventually limit the cost reduction of this technology. one candidate to replace CIGS is $Cu_2ZnSnSe_4$ (CZTSe), fabricated by co-evaporation technique. Effects of substrate temperature of $Cu_2ZnSnSe_4$ absorber layer on the performance of thin films solar cells were investigated. As substrate temperature increased, the grain size of $Cu_2ZnSnSe_4$ films increased presumably. At a optimal condition of substrate temperature is $320^{\circ}C$, the solar cell shows a conversion efficiency of 1.79% with $V_{OC}$ of 0.213V, JSC of $16.91mA/cm^2$ and FF of 49.7%.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.226-229
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• 2004

A stoichiometric mixture of evaporating materials for $CuAlSe_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CuAlSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $680^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuAlSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $9.24{\times}10^{16}\;cm^{-3}$ and $295\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuAlSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;2.8382\;eV\;-\;(8.68{\times}10^{-4}\;eV/K)T^2/(T+155K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $CuAlSe_2$ have been estimated to be 0.2026 eV and 0.2165 eV at 10K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $CuAlSe_2$. The three photocurrent peaks observed at 10K are ascribed to the $A_1-$, $B_1-$, and $C_1$-exciton peaks for n = 1.

• Current Photovoltaic Research
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• 제8권3호
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• pp.102-106
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• 2020

In this paper, the effect of MoSe₂ on the contact resistance (R_C) of the transparent conducting oxide (TCO) and Mo junction in the scribed P2 region of the Cu(In,Ga)Se₂ (CIGS) solar module was analyzed. The CIGS/Mo junction becomes ohmic-contact by MoSe₂, so the formation of the MoSe₂ layer is essential. However, the CIGS solar module has a TCO/MoSe₂/Mo junction in the P2 region due to structural differences from the cell. The contact resistance (R_C) of the P2 region was calculated using the transmission line method, and MoSe₂ was confirmed to increase R_C of the TCO/Mo junction. B doped ZnO (BZO) was used as TCO, and when BZO/MoSe₂ junction was formed, conduction band offset (CBO) of 0.6 eV was generated due to the difference in their electron affinities. It is expected that this CBO acts as a carrier transport barrier that disturbs the flow of current, resulting in increased R_C. In order to reduce the R_C caused by CBO, MoSe₂ must be made thin in a CIGS solar module.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.330-333
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• 2002

The substrate temperature is an important parameter in thin film deposition process. In this paper the effects of the substrate temperature on the properties of CuIn0.75Ga0.25Se2(CIGS) thin films are reported. Structure, surface morphology and optical properties of CIGS thin films deposited at various substrate temperatures have been investigated using a number of analysis techniques. X-ray diffraction (XRD) analysis shows that CIGS films exhibit a strong <112> preferred orientation. As expected, at higher substrate temperatures the films displayed a higher degree of crystallinity. The <112> peak was also enhanced and other CIGS peaks appeared simultaneously These results were supported by experimental work using Raman spectroscopy. The Raman spectra of the as-grown CIGS thin films show only the Al mode peak. The intensity of this peak was enhanced at higher deposition temperatures. Scanning electron microscopy (SEM) results revealed very small grains in films fabricated at 48$0^{\circ}C$ substrate temperature. When the substrate temperature was increased the average grain size also increased together with a reduction in the number and size of the voids. The deposition temperature also had a significant influence on the transmission spectra.

• Current Photovoltaic Research
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• 제3권2호
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• pp.65-70
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• 2015

We applied KF on CIGS film to modify CIGS surface with a wider-bandgap surface layer. With the KF deposition the surface of CIGS film had fine particle on the CIGS surface at 350 and $300^{\circ}C$. No fine particle was detected at 500 and $250^{\circ}C$. With the KF treatment, the Ga and O content increased at the surface, while the In and Cu content decreased. The valence band maximum was lowered with KF treatment. The composition profile and band structure were positive side of applying KF on the CIGS surface. However, the efficiency decreased with the KF treatment due to high series resistance, probably due to too thick surface layer. A smaller amount of KF should be supplied and more systematic analysis is necessary to obtain a reproducible higher efficiency CIGS solar cells.

• 태양에너지
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• 제20권2호
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• pp.43-54
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• 2000

동시 진공증발법을 이용하여 coming glass, soda-lime glass, Mo가 증착된 soda-lime glass 위에 $Cu(In_{1-x}Ga_x)Se_2$ 박막을 증착하였다. Soda-lime glass 위에서 제조된 $Cu(In_{0.5}Ga_{0.5})Se_2$ 박막의 전기비저항값과 정공농도는Cu/(In+Ga)비에 큰 영향을 받지 않았다. Soda-lime glass위에서의 $Cu(In_{1-x}Ga_x)Se_2$ 박막내부와 표면에는 Na이 검출되었고, 표면의 Na는 산소와 결합하고 있었으며, Cu가 부족한 조성에서 이차상이 형성되었다. Ga/(In+Ga)비가 증가할수록 $Cu(In_{1-x}Ga_x)Se_2$ 박막은 회절 peak들의 큰 회절각으로 이동, 초격자 peak등의 분리, 결정립 크기의 감소가 관찰되었다. $Cu_{0.91}(In_{1-x}Ga_x)Se_2$ 박막은 Ga/(In+Ga)비에 무관하게 전기적으로 p-type을 나타내었다. Ag/n-ZnO /i-Zno/CdS/$Cu_{0.91}(In_{0.7}Ga_{0.3})Se_2$/Mo/glass구조의 태양전지를 제조하였으며, 태양전지변환효율(Eff.) = 14.48%, 단락전류밀도(Jsc) = $34.88mA/cm^2$, 개방전압(Voc) =581.5 mV, 충실도(F.F) = 0.714을 나타내었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.382-382
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• 2012

CIGS thin films have received great attention as a promising material for solar cells due to their high absorption coefficient, appropriate bandgap, long-term stability, and low cost production. CIGS thin films are deposited by various methods such as co-evaporation, sputtering, spray pyrolysis and electro-deposition. The deposition technique is one of the most important processes in preparing CIGS thin film solar cells. Among these methods, co-evaporation is one of the best technique for obtaining high quality and stoichiometric CIGS films. However, co-evaporation method is known to be unsuitable for commercialization. The sputtering is known to be very effective and feasible process for mass production. In this study, CIGS thin films have prepared by rf magnetron sputtering using a $Cu(In_{1-x}Ga_x)Se_2$ single quaternary target without post deposition selenization. This process has been examined by the effects of deposition parameters on the structural and compositional properties of the films. In addition, we will explore the influences of substrate temperature and additional annealing treatment after deposition on the characteristics of CIGS thin films. The thickness of CIGS films will be measured by Tencor-P1 profiler. The crystalline properties and surface morphology of the films will be analyzed using X-ray diffraction and scanning electron microscopy, respectively. The optical properties of the films will be determined by UV-Visible spectroscopy. Electrical properties of the films will be measured using van der Pauw geometry and Hall effect measurement at room temperature using indium ohmic contacts.