• Proceedings of the Materials Research Society of Korea Conference
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• 1993.05a
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• pp.99-100
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• 1993

Calorimetric (D.S.C) studies were carried out on the nylon 4,6 single crystals grown from 1,4-butanediol solution at various crystallisation temperatures, based on the assessment of the lamellar thickness by small angle x-ray scattering. Samples were annealed mainly ot get rid of residual solvents inside the crystals. The effect of annealing on the crystal perfection is inferred from the measured thermal properties of the crystals. Accordig to the scanning rates less than 80 K/min., D. S C. melting peaks indicate that changes in the internal morphology of nylon 4,6 crystals preapred at different crystallisation temeratures yield a thermodynamic melting temperature. Tm, of 319 $^{\circ}C$, for the infinitely extended crystal thickness (1/ι). The obtained heat of fusion value for the inginite crystal thickness, Ho, was 270 J/g from the plot of measured feat of fusion ($\Delta$Hm) vs. reciprocal crystal thickness (1/ι). based on these values, the fold surface energy, $\delta$e. of 65.4 erg/$\textrm{cm}^2$ was obtained from Hoffman-Waeeks equation. The thermodynamic melting temperature and heat of fusion of the infinite crystal thickness for the solution grow nylon 4,6 single crystals are found to be higher than of the reported corresponding solution grown nylon 6,6 single crystals. pbtained crystallinity from D. S. C measurements ranges from 40 to 50 %, which is close to the reported yalue for the nylon 6,6 single ctystals but lower than we expected.

• Korean Journal of Materials Research
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• v.31 no.9
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• pp.488-495
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• 2021

Solid state grain growth (SSCG) is a method of growing large single crystals from seed single crystals by abnormal grain growth in a small-grained matrix. During grain growth, pores are often trapped in the matrix and remain in single crystals. Aerosol deposition (AD) is a method of manufacturing films with almost full density from nano grains by causing high energy collision between substrates and ceramic powders. AD and SSCG are used to grow single crystals with few pores. BaTiO₃ films are coated on (100) SrTiO₃ seeds by AD. To generate grain growth, BaTiO₃ films are heated to 1,300 ℃ and held for 10 h, and entire films are grown as single crystals. The condition of grain growth driving force is ∆G_max < ∆G_c ≤ ∆G_seed. On the other hand, the condition of grain growth driving force in BaTiO₃ AD films heat-treated at 1,100 and 1,200 ℃ is ∆G_c < ∆G_max, and single crystals are not grown.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.1
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• pp.100-104
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• 1994

KTP seed crystals were grown by the hydrothermal method and the properties of grown crystals were investigated by means of infrared spectrophotometer. The hydrothermal conditions for high growth rates of seed crystals are as follows: temperature ranges, between , $430 and 450^{\circ}C $ ; hydrothermal solvent, 4m KF solution ; temperatures difference, $30<{\triangle}T<65^{\circ}C$ ; filling %, 65% ; growth method, vertical temperature gradient method. Under these conditions, morphologies of the grown KTP single crystals tended to be bounded by (100), (011) and (201) faces and hydroxyl groups were observed in the grown crystals.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1996.06a
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• pp.258-292
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• 1996

In the last year great interest appears to YBCO thin films preparation on different substrate materials. Preparation of epitaxial film is a very difficult problem. There are many requirements to substrate materials that must be fullfilled. Main problems are lattice mismatch (misfit) and similarity of structure. From paper [1] or follows that difference in interatomic distances and angles of substrate and film is mire important problem than similarity of structure. In this work we present interatomic distances and angle relations between substrate materials belonging to ABCO4 group (where A-Sr or Ca, B-rare earth element, C-Al or Ga) of different orientations and YBCO thin films. There are many materials used as substrates for HTsC thin films. ABCO4 group of compounds is characterized by small dielectric constants (it is necessary for microwave applications of HTsC films), absence of twins and small misfit [2]. There most interesting compounds CaNdAlO4, SrLaAlO4 and SrLaGaO4 were investigated. All these compounds are of pseudo-perovskite structure with space group 14/mmm. This structure is very similar to structure of YBCO. SLG substrate has the lowest misfit (0.3%) and dielectric constant. For preparation of then films of substrates of this group of compound plane of <100> orientation are mainly used. Good quality films of <001> orientations are obtained [3]. In this case not only a-a misfit play role, but c-3b misfit is very important too. Sometimes, for preparation of thin films substrates of <001> and <110> orientations were manufactured [3]. Different misfits for different YBCO faces have been analyzed. It has been found that the mismatching factor for (100) face is very similar to that for (001) face so there is possibility of preparation of thin films on both orientations. SrLaAlO4(SLA) and SrLaGaO4(SLG) crystals of general formula ABCO4 have been grown by the Czochralski method. The quality of SLA and SLG crystals strongly depends on axial gradient of temperature and growth and rotation rates. High quality crystals were obtained at axial gradient of temperature near crystal-melt interface lower than 50℃/cm, growth rate 1-3 mm/h and the rotation rate changing from 10-20pm[4]. Strong anisotropy in morphology of SLA and SLG single crystals grown by the Czochralski method is clearly visible. On the basics of our considerations for ABCO4 type of the tetragonal crystals there can appear {001}, {101}, and {110} faces for ionic type model [5]. Morphology of these crystals depend on ionic-covalent character of bonding and crystal growth parameters. Point defects are observed in crystals and they are reflected in color changes (colorless, yellow, green). Point defects are detected in directions perpendicular to oxide planes and are connected with instability of oxygen position in lattice. To investigate facets formations crystals were doped with Cr3+, Er3+, Pr3+, Ba2+. Chromium greater size ion which is substituted for Al3+ clearly induces faceting. There appear easy {110} faces and SLA crystals crack even then the amount of Cr is below 0.3at.% SLG single crystals are not so sensitive to the content of chromium ions. It was also found that if {110} face appears at the beginning of growth process the crystal changes its color on the plane {110} but it happens only on the shoulder part. The projection of {110} face has a great amount of oxygen positions which can be easy defected. Pure and doped SLA and SLG crystals measured by EPR in the<110> direction show more intensive lines than in other directions which allows to suggest that the amount of oxygen defects on the {110} plane is higher. In order to find the origin of colors and their relation with the crystal stability, a set of SLA and SLG crystals were investigated using optical spectroscopy. The colored samples exhibit an absorption band stretching from the UV absorption edge of the crystal, from about 240 nm to about 550 m. In the case of colorless sample, the absorption spectrum consists of a relatively weak band in the UV region. The spectral position and intensities of absorption bands of SLA are typical for imperfection similar to color centers which may be created in most of oxide crystals by UV and X-radiation. It is pointed out that crystal growth process of polycomponent oxide crystals by Czochralski method depends on the preparation of melt and its stoichiometry, orientation of seed, gradient of temperature at crystal-melt interface, parameters of growth (rotation and pulling rate) and control of red-ox atmosphere during seeding and growth (rotation and pulling rate) and control of red-ox atmosphere during seeding and growth. Growth parameters have an influence on the morphology of crystal-melt interface, type and concentration of defects.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.12
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• pp.863-866
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• 2013

SiC crystal ingots were grown on 6H-SiC dual-seed crystals with different surface roughness and different seed orientation by a PVT (Physical Vapor Transport) method. 4H and 15R-SiC were grown on seed crystal with high root-mean-square (rms) value. The polytype of grown crystal on the seed crystal with lower rms value was confirmed to be 6H-SiC. On the other hand, all SiC crystals grown on seed crystals with different seed orientation were proven to be 6H-SiC. The surface roughness of seed crystals had no effect on the crystal structure of the grown crystals. However, the crystal quality of 6H-SiC single crystals grown on the on-axis seed were revealed to be slightly better than that of 6H-SiC crystal grown on the off-axis seed.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.4
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• pp.184-189
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• 2009

We characterized the growth behavior of nano NiO crystals synthesized by heat-treatment in air at the elevated temperatures using nickel nitrate ($Ni(NO_3)_2{\cdot}6H_2O$). The crystals had the octahedral shape and the length of 200${\sim}$500 nm. The truncation was observed when the NiO powder was heated up to $900^{\circ}C$ for 2 hours. but not be seen at under $600^{\circ}C$. It was observed that nano NiO crystals synthesized at $900^{\circ}C$ made up the networks, the coalescence of the nano crystals through the neck formation between the crystals appeared as the first stage in the sintering mechanism.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1999.06a
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• pp.187-207
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• 1999

The thermal distributions near the growth interface of 150mm CZ crystals were measured by three thermocouples installed at the center, middle (half radius) and edge (10m from surface) of the crystals. The results show that larger growth rates produced smaller thermal gradients. This contradicts the widely used heat flux balance equation. Using this fact, it si confirmed in CZ crystals that the type of point defects created is determined by the value of the thermal gradient (G) near the interface during growth, as already reported for FZ crystals. Although depending on the growth systems the effective lengths of the thermal gradient for defect generation are varied, were defined the effective length as 10mm from the interface in this experiment. If the G is roughly smaller than 20C/cm, vacancy rich CZ crystals are produced. If G is larger than 25C/cm, the species of point defects changes dramatically from vacancies to interstitial. The experimental results which FZ and CZ crystals are detached from the melt show that growth interfaces are filled with vacancy. We propose that large G produces shrunk lattice spacing and in order to relax such lattice excess interstitial are necessary. Such interstitial recombine with vacancies which were generated at the growth interface, next occupy interstitial sites and residuals aggregate themselves to make stacking faults and dislocation loops during cooling. The shape of the growth interface is also determined by the distributions of G across the interface. That is, the small G and the large G in the center induce concave and convex interfaces to the melt, respectively.

• Journal of Ginseng Research
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• v.26 no.4
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• pp.213-218
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• 2002

Crystalline calcium oxalate occur throughout near)y all plants species in five major forms; styloids, druses, raphids, prisms and sands. These crystals are known to be distributed in specific tissue such as cortex, xylem, phloem, cambium and epidermis. This research was undertaken to identify the occurrence, type, location and ultrastructure of druse crystals in Panax ginseng. In situ visualization, conventional light microscopy, histochemistry and scanning electron microscopy were applied for these purposes. Druse crystals in ginseng were identified as calcium oxalate by silver nitraterubeanic acid histochemistry. Calcium oxalate crystals are observed in nearly all plant organs such as leaf, petiole, peduncle, stem, rhizome, tap root and lateral root except fine root. Most frequent observation of crystals in the leaf and rhizomes were noticed. Three different types of calcium of oxalate druse crystals were identified by scanning electron microscopy.

• Korean Journal of Acupuncture
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• v.24 no.3
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• pp.91-103
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• 2007

Objectives : The purpose of this study was to investigate the usability of live blood analysis on interior and exterior vascular laser irradiation therapy. Methods : We had analyzed the changing forms of the live blood sample with microscope before and after vascular laser irradiation therapy of blood. The live blood analysis was operated on Rouleau of red cell, erythrocyte aggregation, thrombocyte aggregation, uric acid crystals, red crystals, protoplasts. First, we analyzed all patients on each item, then did same thing classified two groups, Interior and exterior. Results : Rouleau of red cell, erythrocyte aggregation, thrombocyte aggregation, uric acid crystals, red crystals, protoplasts were decreased significantly, after interior and exterior aggregation, uric acid crystals. Interior vascular laser irradiation therapy was more effective than interior on Rouleau of red cell, erythrocyte aggregation, thrombocyte aggregation, uric acid crystals. Interior vascular laser irradiation therapy was more effective than exterior on red crystals, protoplasts. Conclusions : This study suggests that live blood analysis has the usability on vascular laser irradiation therapy. Then according to interior and exterior vascular laser irradiation therapy, the result has some different on each item. So it is better that choose the method, interior or exterior, for more effective therapy.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.2
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• pp.100-103
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• 2019

The change in vanadium amount according to the growth direction of vanadium-doped semi-insulated (SI) SiC single crystals using high-purity SiC powder was investigated. High-purity SiC powder and a porous graphite (PG) inner crucible were placed on opposite sides of SiC seed crystals. SI SiC crystals were grown on 2 inch 6H-SiC Si-face seeds at a temperature of $2,300^{\circ}C$ and growth pressure of 10~30 mbar of argon atmosphere, using the physical vapor transport (PVT) method. The sliced SiC single crystals were polished using diamond slurry. We analyzed the polytype and quality of the SiC crystals using high-resolution X-ray diffraction (XRD) and Raman spectroscopy. The resistivity of the SI SiC crystals was analyzed using contactless resistivity mapping (COREMA) measurements.