• Journal of Magnetics
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• v.18 no.1
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• pp.26-29
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• 2013

$Mn_xFe_{3-x}O_4$ powders have been fabricated by using sol-gel methods; their crystallographic and magnetic properties were investigated by using X-ray diffraction, scanning electron microscopy, M$\ddot{o}$ssbauer spectroscopy, and vibrating sample magnetometer. The $Mn_xFe_{3-x}O_4$ ferrite powders annealed at $500^{\circ}C$ had a single spinel structure regardless of the $Mn^{2+}$-doping amount and their lattice constants became larger as the $Mn^{2+}$ concentration was increased. Their Mossbauer spectra measured at room temperature were fitted with 2 Zeeman sextets due to the tetrahedral and octahedral sites of Fe ions, which made them ferrimagnetic. The magnetic behavior of $Mn_xFe_{3-x}O_4$ powders showed that the $Mn^{2+}$-doping amount made their saturation magnetization increase, but there were no severe effects on their coercivities. The saturation magnetization of the $Mn_xFe_{3-x}O_4$ powder varied from 38 emu/g to 70.0 emu/g and their minimum coercivity was 111.1 Oe.

• Corrosion Science and Technology
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• v.3 no.2
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• pp.54-58
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• 2004

Effects of texture on the electrochemical behaviors of single grains in polycrystalline zinc were investigated using a capillary-based micro-droplet cell. Pontiodynamic sweeps and capacity measurements were carried out in pH 9 borate buffer solution. The cyclic voltammograms and the capacity measurements on single grains with different crystallographic orientations in polycrystalline Zn showed a strong dependence of oxide growth on crystallographic grain orientation. The total charge consumed for oxide formation and the inverse capacity increased with an increase of surface packing density of grain. suggesting the oxide formation was greater on grains with higher surface packing density.

• Proceedings of the Korea Crystallographic Association Conference
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• 2000.11a
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• pp.21-21
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• 2000

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2014.10a
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• pp.539-543
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• 2014

This work investigated the electromechanical performance of a cantilevered vibration energy harvester incorporating the single crystal PMN-PZT, manufactured with the most recent technology of solid-state single crystal growth. Single crystal PMN-PZTs with two different crystallographic axes such as [011] and [001] were considered. For the [011] orientation, because material properties such as the stiffness, piezoelectric strain coefficients are not the same in the directions normal to the crystallographic axis, the effects of the transversely anisotropy on the magnitude and frequency bandwidth of output power were also analyzed.

• Proceedings of the Korea Crystallographic Association Conference
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• 2002.11a
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• pp.52-52
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• 2002

Recently, nanoporous low-k materials using porogen (pore generating material) template method have gained much attraction due to the feasible advantage of dielectric constant decrease with the increase of porogen content, which is burning out and making air void by thermal curing. In nanoporous thin films, further, control of pore size and its distribution is very important to retain suitable thermal, mechanical and electrical properties. In this study, nanoporous low-k films were prepared with MTMS-BTMSE copolymer and porogen. The effect of interaction of copolymer matrix and porogen on pore size and distribution was comparatively to investigate with molecular structure and end functional group. The characterization of nanoporous thin film prepared was also performed using various techniques including NMR, GPC, Ellipsometer, FE-SEM, TGA, and FT-IR.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.43 no.6
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• pp.965-970
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• 1994

ZnO transparent conducting oxide thin films have been prepared by Pyrosol deposition method and the effects of the different experimental variables on the electrical resistivity and optical transmittance of the prepared films have been investigated in details. The best film with a resistivity of about 8 X 10S0-2TΩcm and transmittance about 80% has been obtained at the substrate temperature of 4$25^{\circ}C$ by using HS12T+CHS13TOH(1:3) solvent and NS12T carrier gas after annealing at 20$0^{\circ}C$ for 40 minutes in vacuum. Furthermore, We have also found the effect of substrate temperature on crystallographic orientation and surface morphology. Annealing of the as-deposited film in vacuum leads to a substantial reduction in resistivity without affecting the optical transmittance and crystallographic orientation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.419-422
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• 1999

We prepared CoCr thin film for perpendicular magnetic recording media by facing targets sputtering system(FTS system) which can deposit a high quality thin films in plasma-free state and wide range of working pressure. In this study, we investigated that the effect of sputtering condition , that Argon gas pressure and substrate temperature, on magnetic and crystallographic characteristic of CoCr thin film as well as the variation perpendicular coercivity in changing of film's thickness. Crystallographic and magnetic characteristic of prepared thin films were evaluated by x-ray fractometry(XRD), vibrating sample magnetometer(VSM) and kerr hysteresis loop measurement.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.464-466
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• 2000

AIN thin films have been prepared by reactive sputtering method, using facing targets sputtering system with a DC power supply which can deposit a high quality thin film and control deposition condition in all range of nitrogen. The crystallographic characteristics of AIN thin films on N$_2$/Ar ratio was investigated by alpha-step and X-ray diffraction. As a result, the AIN film deposited at the pressure ratio of the nitrogen of 30% revealed strong X-ray diffraction intensity under substrate temperature 25$^{\circ}C$ and applied current 0.4A.

• Journal of the Korean institute of surface engineering
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• v.36 no.1
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• pp.22-26
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• 2003

This short communication reports on the experiment which demonstrates that superhard nanostructured films with hardness of about 40 GPa and greater can be composed not only of two or more nanocrystalline and/or amorphous phases of different materials, as it is in the case of nanocomposite coatings, but also that can be formed by a mixture of small (<10 nm) nanocrystalline grains of the same material with different crystallographic orientation and/or lattice structures. This finding opens new possibilities to develop advanced nanostructured materials with enhanced physical and functional properties.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.6
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• pp.576-581
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• 2023

The Ga₂O₃ thin films were deposited using an RF sputtering system and the effect of crystallographic and optical properties under rapid thermal annealing conditions on Ga₂O₃ thin film was evaluated. A rapid thermal annealing method can fabricate a crystalline Ga₂O₃ thin film which is applied to various fields with a low cost and a high efficiency compared with the conventional post-annealing method. In this study, the Ga₂O₃ treated at 900℃ for 1 min showed the beta and gamma phases in XRD measurement. In optical properties, the crystalline Ga₂O₃ represented a high transmittance of more than 80% in the visible region and was calculated with a high optical bandgap energy of 4.58 eV. The beta and gamma phases Ga₂O₃ can be obtained by adjusting the rapid thermal annealing temperatures, and the various properties such as the optical bandgap energy can be controlled. Moreover, it is expected that crystalline Ga₂O₃ can be applied to various devices by controlling not only temperature but process time.