• 대한금속재료학회지
• /
• 제49권11호
• /
• pp.831-838
• /
• 2011

Effects of spangle size and crystallographic characteristics on the surface appearance, galling properties, and adhesive strength of hot-dip galvanized steel sheets have been investigated. Both spangle size and crystallographic orientation measured by optical microscopy, scanning electron microscopy, and X-ray diffraction were identified as critical factors influencing the galvanized coating performance. By decreasing the spangle size, surface appearance and galling properties related to the friction coefficient were significantly improved. However, low temperature adhesive-strength with small spangle galvanized steel sheets showed lower values compared to commercially used galvanized coating. The variation of adhesive strength in terms of spangle size has been clarified.

• 오토저널
• /
• 제6권4호
• /
• pp.62-69
• /
• 1984

• Bulletin of the Korean Chemical Society
• /
• 제8권5호
• /
• pp.430-431
• /
• 1987

• 한국결정학회:학술대회논문집
• /
• 한국결정학회 2007년도 추계학술연구발표회 및 정기총회
• /
• pp.43-44
• /
• 2007

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
• /
• pp.140-143
• /
• 2002

In this study, we prepared ZnO/glass and $ZnO/SiO_{2}/Si$ thin film by Facing Targets Sputtering (FTS) system for Film Bulk Acoustic Resonator (FBAR). When the ZnO thin film applied to piezoelectric thin film, it requires good c-axis preferred orientation. And c-axis orientation has a remarkable difference with preparation conditions. Therefore, c-axis orientation must be significantly evaluated according to changing deposition conditions. Moreover, in order to prepare ZnO thin film with good crystallographic properties and progressive of efficiency of product process, the ZnO thin film should have to prepared as low temperature as possible. In this work, we prepared ZnO thin films on slide glass and $SiO_{2}/Si$ substrate. And the crystallographic characteristics of ZnO thin films on sputtering conditions were investigated by alpha-step and X-ray diffraction.

• 한국전기전자재료학회논문지
• /
• 제16권8호
• /
• pp.711-715
• /
• 2003

In this study, we prepared ZnO/glass and ZnO/SiO$_2$/Si thin film by Facing Targets Sputtering (FTS) system for Film Bulk Acoustic Resonator (FBAR). When the ZnO thin film applied to piezoelectric thin film, it requires good c-axis preferred orientation. And c-axis orientation has a remarkable difference with preparation conditions. Therefore, c-axis orientation must be significantly evaluated as a function of deposition conditions. Moreover, in order to prepare ZnO thin film with good crystallographic properties and progressive of efficiency of product process, the ZnO thin film should be prepared as low temperature as possible. In this work, we prepared ZnO thin films on slide glass and SiO$_2$/Si substrate. And the crystallographic characteristics of ZnO thin films on sputtering conditions were investigated by alpha-step and X-ray diffraction.

• 한국결정학회:학술대회논문집
• /
• 한국결정학회 2003년도 춘계학술연구발표회
• /
• pp.7-7
• /
• 2003

Heteromagnetic nanostructures, which consist of two or more different layers such as nonmagnet, insulator, ferromagnet, antiferromagnet, and superconductor, have been widely used in current and likely future spintronics devices. Their many intriguing magnetic properties are originated from a variety of magnetic interactions at relevant length scales at or near interfaces and between different constituent layers as well as laterally different regions in chemical and magnetic heterogeneity. The fundamental properties can thus differ along depth and laterally in the film plane, depending on their relevant coupling length scales. The entire properties may be characterized by interface properties and/or the depth-varying properties of the individual constituent layers, and lateral inhomogeneity as well. It is a challenge to investigate both depth-varying properties and lateral heterogeneity in such heteromagnetic nanostructures. In this talk, soft x-ray magneto-optical effect as a nanometer scale probe of a variety of heteromagnetic structures is presented and its related noble techniques are introduced. For instances, magnetization vector imaging to investigate vector spin configurations in the film plane is presented, as well as the Kerr rotation, ellipticity, and intensity measurements as a depth sensitive probe on the atomic scales.

• Journal of Magnetics
• /
• 제2권1호
• /
• pp.16-21
• /
• 1997

Those were investigated, the crystallographic, morphological, and magnetic properties of barium ferrite film (SiO2/Si substrate) prepared by sol-gel dip coating. Appropriate sol was prepared by dissolvin barium and iron nitrate in ethylene glycol at 80$^{\circ}C$. To obtain the films, thermally oxidized p-type silicon substrate with (111) of crystallographic orientation were dipped into the sol, dried at 250$^{\circ}C$ to remove organic material, and heated at 800$^{\circ}C$ for 3 hours in air for the crystallization of barium ferrite. It was found that the particles of barium ferrite formed on the substrate exhibited needle-like shape placing parallel to the substrate and its c-axis is long axis direction. There was tendency that the coercive force in horizontal direction to the substrate was higher than that in vertical direction to it. This tendency was profound in large thickness.

• 한국전기전자재료학회논문지
• /
• 제11권1호
• /
• pp.62-66
• /
• 1998

M$\ddot{o}$ssbauer spectra of ferrimagnetic $Fe_2SE_8$ prepared with $^{57}Fe$ enriched iron have been taken at 298 K and below 78K, and Fe\ulcornerSe\ulcorner has been studied by X-ray diffraction. The crystal structure is found to be a "3c" hexagonal superstructure of the NiAs structure. Three sets of six-line hyperfine patterns were obtained and assigned to three magnetically nonequivalent sites of a superstructure of the crystal. The iron ions at all three sites are found to be in a highly covalent ferrous state. It is shown that the results obtained at the low temperature region are well consistent with Okazaki's "3c" superstructure model.uperstructure model.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
• /
• pp.851-856
• /
• 2003

We have investigated the material and electrical properties of $Bi_{4-x}La_xTi_3O_{12}$ (BLT) ferroelectric thin film for ferroelectric nonvolatile memory applications of capacitor type and single transistor type. The 120nm thick BLT films were deposited on $Pt/Ti/SiO_2/Si$ and $SiO_2/Nitride/SiO_2$ (ONO) substrates by the sol-gel spin coating method and were annealed at $700^{\circ}C$. It was observed that the crystallographic orientation of BLT thin films were strongly affected by the excess Bi content and the intermediate rapid thermal annealing (RTA) treatment conditions regardeless of two type substrates. However, the surface microstructure and roughness of BLT films showed dependence of two different type substrates with orientation of (111) plane and amorphous phase. As increase excess Bi content, the crystallographic orientation of the BLT films varied drastically in BLT films and exhibited well-crystallized phase. Also, the conversion of crystallographic orientation at intermediate RTA temperature of above $450^{\circ}C$ started to be observed in BLT thin films with above excess 6.5% Bi content and the rms roughness of films is decreased. We found that the electrical properties of BLT films such as the P-V hysteresis loop and leakage current were effectively modulated by the crystallographic orientations change of thin films.