• Proceedings of the Korean Ceranic Society Conference
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• 2003.10a
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• pp.102.2-102
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• 2003

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.11a
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• pp.100-100
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• 1998

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.9
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• pp.979-982
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• 2004

The ZnO thin films were prepared by the FTS (facing target sputtering) system, which enables to provide high density plasma and a high deposition rate at a low working gas pressure. We introduced the AZO thin film in order to improve the crystallographic properties of ZnO thin film because of the AZO(ZnO:Al) thin film has an equal crystal structure to the ZnO thin film. ZnO/AZO thin films were deposited at a different oxygen gas flow ratio, R.T. 2mTorr working pressure and a 0.8A sputtering current. The film thickness and c-axis preferred orientation of ZnO/AZO/glass thin films were measured by ${\alpha}$-step and an x-ray diffraction (XRD) instrument. In the results, we could prepare the ZnO thin film with c-axis preferred orientation of about 6$^{\circ}$ on substrate temperature R.T. at O$_2$ gas flo rate 0.5.

• Applied Microscopy
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• v.45 no.4
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• pp.230-235
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• 2015

Crystallographic models are effective tools to interpret, calculate and even to predict the preferred crystallographic morphologies of precipitates in various precipitation systems. The present study gives an introduction on the recently developed secondary constrained coincident site lattice (II-CCSL) model. Using the II-CCSL model, the interface matching condition of the ${\beta}-Mg_{17}Al_{12}$ precipitates with ${\alpha}-Mg$ matrix in an aged AZ91 alloy has been analyzed to rationalize the morphologies of the precipitates. The results show that the characteristic crystallographic features of the observed ${\beta}-Mg_{17}Al_{12}$ precipitates, i.e., the habit plane of the ${\beta}-Mg_{17}Al_{12}$ lath with a Burgers orientation relationship (OR) and the growth direction of the ${\beta}-Mg_{17}Al_{12}$ with a Crawley OR exhibit a better lattice matching degree than their vicinal orientations. Moreover, the Crawley OR is preferred to the Burgers OR due to a better lattice match.

• Structural Engineering and Mechanics
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• v.58 no.4
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• pp.677-687
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• 2016

On the basis of the energy approach it is reported a development of the yield function and the constitutive equations for the orthotropic material with consideration of the crystal lattice constants and parameters of the crystallographic texture for the general stress state. For practical use in sheet metal forming analysis it is considered different loading scenarios: plane stress and plane strain states. Using the proposed yield function, the influence of single ideal components on the shape of yield surface was analyzed. The six texture components investigated here were cube, Goss, copper, brass, S and rotated cube, as these components are typically observed in rolled sheets from FCC alloys.

• Korean Journal of Crystallography
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• v.4 no.2
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• pp.49-53
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• 1993

A converuent crystal orientation method for oscillation shot ograchy using de Jong Boumancamera is presented The method involves the measuremint of the deviations of resection spots of Oth layer from the equator These deviations are added or subtracted to give the horizontal and vertical arc corrections.

• Proceedings of the Petrological Society of Korea Conference
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• 2009.05a
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• pp.61-61
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• 2009

• Proceedings of the Korean Magnestics Society Conference
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• 2017.05a
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• pp.129-130
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• 2017

• Proceedings of the Korean Nuclear Society Conference
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• 2005.10a
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• pp.394-395
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• 2005

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.151-154
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• 2003

AlN/Al/SiO$_2$/Si thin films for application to FBAR(Film Bulk Acoustic Resonator) devices were prepared by FTS(Facing Targets sputtering system) apparatus which provides a stable discharge at low gas pressures and can deposit high quality thin films because of the substrate located apart from the plasma. The AlN thin films were deposited on a $SiO_2(1{\mu}m)/Si(100)$ substrate using an Al bottom electrode. The process parameters were fixed such as sputering power of 200W, working pressures of 1mTorr and AlN thin film thickness of 800nm, respectively and crytallographic characteristics of AlN thin films were investigated as a function of $N_2$ gas flow rate$[N_2/(N_2+Ar)]$. Thickness of AlN thin films were measured by $\alpha$-step, the crystallographic characteristics and c-axis preferred orientation were evaluated by XRD.