• 제목/요약/키워드: Crystallographic orientation

검색결과 201건 처리시간 0.028초

FTS법으로 제작한 ZnO/AZO 박막의 결정학적 특성 (Crystallographic Properties of ZnO/AZO thin Film Prepared by FTS method)

  • 금민종;강태영;최형욱;박용서;김경환
    • 한국전기전자재료학회논문지
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    • 제17권9호
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    • pp.979-982
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    • 2004
  • The ZnO thin films were prepared by the FTS (facing target sputtering) system, which enables to provide high density plasma and a high deposition rate at a low working gas pressure. We introduced the AZO thin film in order to improve the crystallographic properties of ZnO thin film because of the AZO(ZnO:Al) thin film has an equal crystal structure to the ZnO thin film. ZnO/AZO thin films were deposited at a different oxygen gas flow ratio, R.T. 2mTorr working pressure and a 0.8A sputtering current. The film thickness and c-axis preferred orientation of ZnO/AZO/glass thin films were measured by ${\alpha}$-step and an x-ray diffraction (XRD) instrument. In the results, we could prepare the ZnO thin film with c-axis preferred orientation of about 6$^{\circ}$ on substrate temperature R.T. at O$_2$ gas flo rate 0.5.

Crystallography Analysis of the β-Mg17Al12 Precipitates by the Secondary Constrained Coincident Site Lattice Model

  • Huang, Xuefei;Huang, Weigang
    • Applied Microscopy
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    • 제45권4호
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    • pp.230-235
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    • 2015
  • Crystallographic models are effective tools to interpret, calculate and even to predict the preferred crystallographic morphologies of precipitates in various precipitation systems. The present study gives an introduction on the recently developed secondary constrained coincident site lattice (II-CCSL) model. Using the II-CCSL model, the interface matching condition of the ${\beta}-Mg_{17}Al_{12}$ precipitates with ${\alpha}-Mg$ matrix in an aged AZ91 alloy has been analyzed to rationalize the morphologies of the precipitates. The results show that the characteristic crystallographic features of the observed ${\beta}-Mg_{17}Al_{12}$ precipitates, i.e., the habit plane of the ${\beta}-Mg_{17}Al_{12}$ lath with a Burgers orientation relationship (OR) and the growth direction of the ${\beta}-Mg_{17}Al_{12}$ with a Crawley OR exhibit a better lattice matching degree than their vicinal orientations. Moreover, the Crawley OR is preferred to the Burgers OR due to a better lattice match.

Yield function of the orthotropic material considering the crystallographic texture

  • Erisov, Yaroslav A.;Grechnikov, Fedor V.;Surudin, Sergei V.
    • Structural Engineering and Mechanics
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    • 제58권4호
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    • pp.677-687
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    • 2016
  • On the basis of the energy approach it is reported a development of the yield function and the constitutive equations for the orthotropic material with consideration of the crystal lattice constants and parameters of the crystallographic texture for the general stress state. For practical use in sheet metal forming analysis it is considered different loading scenarios: plane stress and plane strain states. Using the proposed yield function, the influence of single ideal components on the shape of yield surface was analyzed. The six texture components investigated here were cube, Goss, copper, brass, S and rotated cube, as these components are typically observed in rolled sheets from FCC alloys.

De Jong-Bouman Camera를 이용한 진동사진을 촬영하기 위하여 결정방향을 속히 맞추는 방법 (A Quick Adjustment Method for Crystal Orientation in Oscillation Photography using do Jong-Bowman Camera)

  • 서일환;이진호
    • 한국결정학회지
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    • 제4권2호
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    • pp.49-53
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    • 1993
  • Dejong-Bourruncamera를 이용 한진동사진술에서 시료의 방향 수E방법의 이론이 논의되었다. 적도선으로부터 Othlayer의 회절반점들의 편차를 재어서 가하고 감하면 그들의 각각이 수평 및 수직 arc의 수정분이다.

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FBAR용 AlN/Al/SiO$_2$/Si 박막의 결정학적 특성에 관한 연구 (A study on the crystallographic properties of AlN/Al/SiO$_2$/Si thin film for FBAR)

  • 김건희;금민종;최형욱;김경환
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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    • pp.151-154
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    • 2003
  • AlN/Al/SiO$_2$/Si thin films for application to FBAR(Film Bulk Acoustic Resonator) devices were prepared by FTS(Facing Targets sputtering system) apparatus which provides a stable discharge at low gas pressures and can deposit high quality thin films because of the substrate located apart from the plasma. The AlN thin films were deposited on a $SiO_2(1{\mu}m)/Si(100)$ substrate using an Al bottom electrode. The process parameters were fixed such as sputering power of 200W, working pressures of 1mTorr and AlN thin film thickness of 800nm, respectively and crytallographic characteristics of AlN thin films were investigated as a function of $N_2$ gas flow rate$[N_2/(N_2+Ar)]$. Thickness of AlN thin films were measured by $\alpha$-step, the crystallographic characteristics and c-axis preferred orientation were evaluated by XRD.

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