• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.109-112
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• 2008

The grain size of JIC poly-Si can be varied from few tens of nanometers to the one having the larger grain size exceeding that of excimer laser crystallized (ELC) poly-Si according transmission electron microscopy. JIC poly-Si exhibits an excellent uniformity with regards to the grain size. We report here the blanket crystallization of the large area using the $2^{nd}$ generation glass substrate.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.3
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• pp.237-241
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• 1998

In this study, PLZT stock solutions around x/65/35 (x=6~11) ferroelectric region were prepared by Sol-Gel method and deposited on ITO-glass by spin-coating method. The thin films were annealed by RTA(rapid thermal annealing). The variations of crystallographic structure of the thin films were observed using XRD and hysteresis curves, dielectric characteristics, and optical transmittances were measured in order to investigate the characteristics of the thin films. The thin films were crystallized at $750^{\circ}C$ for 5 min by RTA. Relative dielectric constant and optical transmittance increased with increasing La content, Ec and Pr were higher for thin films than for bulk materials.

• Journal of the Korean Ceramic Society
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• v.29 no.10
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• pp.815-821
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• 1992

The batches having excess SiO2 to tetrasilicic mica KMg2.5 (Si4O10)F2 were melted at 1450℃. The fabricated samples were heat-treated for the nucleation and the crystallization. The crystallized samples were investigated on several properties. The tetrasilicic mica composition with excess 10 wt% SiO2 was successful both in glassifying and in crystallizing. The optimum temperatures for the nucleation and the crystallization were 680℃ and 1000-1100℃, respectively. The mica and the cristobalite crystallines were identified after heat-treatment. The properties of the samples processed appropriately were as follows, bulk density 2.64g/㎤, thermal expansion coefficient ∼80×10-7/℃, Vicker's hardness ∼105 Kgf/㎟, bending strength ∼666Kgf/㎟, dielectric constant ∼11.1, tan δ 2.5%, volume resistivity 2.35×107∼1.3×1011{{{{ OMEGA }}cm, surface roughness 6.984㎛.

• Journal of the Korean Ceramic Society
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• v.25 no.5
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• pp.541-551
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• 1988

The purpose of this investigation was to prepare multicomponent monolithic Li-Al-Si gels of composition(mol%) 16.67 Li2O-16.67 Al2O3-66.67 SiO2 and to convert the gels to monolithic glass-ceramic at low temperature without melting. The hydrolysis, DTA, TGA, TMA, SEM, pore distribution, density and the activation energy for crystallization of the glass-ceramic formation with rawmaterials of which tetraethl orhosilicate of networkforming cation(Si) is partially hydrolyzed, aluminum isoproxide and lithium methoxide prepared by Li-metal react with methanol were studied. The results were as follows : 1) Monolithic gels which were added with additional water, resulting in a total water content 2.5 to 3.0 times the stoichiometric amount required to fully hydrolyze the alkoxides. 2) Specimens were dried to form crylinders 60mm in length and 40mm in diameter in about 800 hrs at 5$0^{\circ}C$. 3) $\beta$-eucryptite crystals and $\beta$-spodumene crystals were detected in samples heated above 75$0^{\circ}C$. 4) Within the temperature and range of 25-50$0^{\circ}C$ and 1,00$0^{\circ}C$ the thermal expansion coefficient for crystallized samples were shown as 2.6-5.7$\times$10-7/$^{\circ}C$ and 7.4-12.5$\times$10-7/$^{\circ}C$, respectively. 5) The activation energy for the crystal growth was 11.01kcal/mol at 794$^{\circ}C$ to 85$0^{\circ}C$.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.35 no.3
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• pp.221-228
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• 2011

The large-area crystallization of amorphous silicon thin films on glass backplanes is one of the key technologies in the manufacture of flat-panel displays. Joule-heating induced crystallization (JIC) is a recently introduced crystallization technology. It is considered a highly promising technique for fabricating OLEDs, because the film of amorphous silicon on glass can be crystallized in tens of microseconds, minimizing thermal and structural damage to the glass. In this study, we theoretically and experimentally investigated the temperature variation during the phase transformation. The critical temperatures for crystallization were determined for both solid-solid and solid-liquidsolid transitions, by carrying out in-situ temperature measurements and numerical analysis of the JIC.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.3 no.2
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• pp.176-184
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• 1993

The glasses, which the $\beta$-spodumene as the principal crystalline phase could be precipitated, were melted by adding >, $P_2O_5, TiO_2, ZrO_2 in the Li_2O-Al_2O_3-SiO_2$ system. In order to achieve the glass-ceramic body of near-theoritical density by sintering method, the optimum condition of heat treatment, the effect of glass powder size and the properties were investigated by DTA, XRD, bulk density, thermal expansion and SEM. Addition of $P_20_5$ imProved the tendency of sintering and the sample with 9wt% $P_20_5$ content was the most dense OOdy by sintering method. The optimum condition of heat treatmemt was sintered for densitification at $740^{\circ}C$ and crystallized at $950^{\circ}C$. In the optimum condition, the relative density was above 90% and the thermal expansion was negative about $-1{\times}10^{-7}/^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.81-81
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• 2008

Applications of CdS films in this study are to exhibit a high conductivity when they are exposed at light with visible wavelength and sequentially to show a low conductivity in dark state. For this purpose, CdS films should have a high photosensitivity, still maintaining a high conductivity at a visible light. In this study, CdS films were prepared at room temperature on glass substrates by rf magnetron sputtering. In order to increase the photo-conductivity in visible light, various defect levels should be located within the CdS band gap. In order to nucleate the defect sites within the CdS band gap, CdS films were deposited on glass substrates at room temperature using various $H_2$/(Ar+$H_2$) flow ratios by an rf magnetron sputtering. Through the investigation of the structural and photoconductive properties of CdS films by an addition of hydrogen, the relationship between photo- and dark-resistance in CdS films was investigated in detail. 200-nm-thick CdS films for photoconductive sensor applications were prepared at various $H_2$/(Ar+$H_2$) flow ratios on glass substrates at room temperature by rf magnetron sputtering. Sulfur concentration in CdS films crystallized at room temperature with (002) preferred orientation depends directly on the hydrogen atmosphere and the surface roughness of the films gradually increases with increasing hydrogen atmosphere. Films deposited at 8% of $H_2$/(Ar+$H_2$) exhibit an abrupt decrease of dark- and photo-resistance, showing a low photo-sensitivity ($R_{dark}/R_{photo}$). Onthe other hand, films deposited at a hydrogen atmosphere of 42% exhibit a photo-sensitivity of $5\times10^3$, maintaining a photo-resistance of an approximately $2\times10^4\Omega$/square. The dark- and photo-resistance values of CdS films were related with a composition, surface roughness, and defect sites within the band gap.

• Korean Journal of Materials Research
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• v.33 no.2
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• pp.63-70
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• 2023

In this study, crystallization was effectively suppressed in Al-based metallic glasses (Al-MGs) during pulverization by cryo-milling by applying an extremely low processing temperature and using a surfactant. Before Al-MGs can be used as an additive in Ag paste for solar cells, the particle sizes of the Al-MGs must be reduced by milling. However, during the ball milling process crystallization of the Al-MG is a problem. Once the Al-MG is crystallized, they no longer exhibit glass-like behavior, such as thermoplastic deformation, which is critical to decrease the electrical resistance of the Ag electrode. The main reason for crystallization during the ball milling process is the heat generated by collisions between the particles and the balls, or between the particles. Once the heat reaches the crystallization temperature of the Al-MGs, they start crystallization. Another reason for the crystallization is agglomeration of the particles. If the initially fed particles become severely agglomerated, they coalesce instead of being pulverized during the milling. The coalesced particles experience more collisions and finally crystallize. In this study, the heat generated during milling was suppressed by using cryo-milling with liquid-nitrogen, which was regularly fed into the milling jar. Also, the MG powders were dispersed using a surfactant before milling, so that the problem of agglomeration was resolved. Cryo-milling with the surfactant led to D50 = 10 um after 6 h milling, and we finally achieved a specific contact resistance of 0.22 mΩcm² and electrical resistivity of 2.81 μΩcm using the milled MG particles.

• Journal of the Korean Vacuum Society
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• v.12 no.2
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• pp.130-135
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• 2003

Polycrystalline silicon thin films have been used for low cost thin film device application. However, it was very difficult to fabricate high performance poly-Si at a temperature lower than $600^{\circ}C$ for glass substrate because the crystallization process technologies like conventional solid phase crystallization (SPC) require the number of high temperature (600-$1000^{\circ}C$) process. The objective of this paper is to grow poly-Si on flexible substrate using a rapid thermal crystallization (RTC) of amorphous silicon (a-Si) layer and make the high temperature process possible on molybdenum substrate. For the high temperature poly-Si growth, we deposited the a-Si film on the molybdenum sheet having a thickness of 150 $\mu\textrm{m}$ as flexible and low cost substrate. For crystallization, the heat treatment was performed in a RTA system. The experimental results show the grain size larger than 0.5 $\mu\textrm{m}$ and conductivity of $10^{-5}$ S/cm. The a-Si was crystallized at $1050^{\circ}C$ within 3min and improved crystal volume fraction of 92 % by RTA. We have successfully achieved a field effect mobility over 67 $\textrm{cm}^2$/Vs.

• Journal of the Korean Vacuum Society
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• v.12 no.3
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• pp.168-173
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• 2003

Recently, according to the rapid progress in Flat-panel-display industry, there has been a growing interest in the poly-Si process. Compared with a-Si, poly-Si offers significantly high carrier mobility, so it has many advantages to high response rate in Thin Film Transistors (TFT's). We have investigated a new process for the high temperature Solid Phase Crystallization (SPC) of a-Si films without any damages on glass substrates using thin film heater. because the thin film heater annealing method is a very rapid thermal process, it has very low thermal budget compared to the conventional furnace annealing. therefore it has some characteristics such as selective area crystallization, high temperature annealing using glass substrates. A 500 $\AA$-thick a-Si film was crystallized by the heat transferred from the resistively heated thin film heaters through $SiO_2$ intermediate layer. a 1000 $\AA$-thick $TiSi_2$ thin film confined to have 15 $\textrm{mm}^{-1}$ length and various line width from 200 to 400 $\mu\textrm{m}$ was used as the thin film heater. By this method, we successfully crystallized 500 $\AA$-thick a-Si thin films at a high temperature estimated above $850^{\circ}C$ in a few seconds without any thermal deformation of g1ass substrates. These surprising results were due to the very small thermal budget of the thin film heaters and rapid thermal behavior such as fast heating and cooling. Moreover, we investigated the time dependency of the SPC of a-Si films by observing the crystallization phenomena at every 20 seconds during annealing process. We suggests the individual managements of nucleation and grain growth steps of poly-Si in SPC of a-Si with the precise control of annealing temperature. In conclusion, we show the SPC of a-Si by the thin film heaters and many advantages of the thin film heater annealing over other processes