• Korean Journal of Food Science and Technology
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• v.21 no.5
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• pp.691-696
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• 1989

It Is a unique dietary culture in Korea in that starch is isolated and utilized from steeped potato. In this experiment the potato was steeped in water at $30^{\circ}C$ for 7 days and the properties of starch were examined. The pH in steep water decreased, while sugar cotent (total and reducing) increased. The lager granules were diminished during steeping. Holes on the starch granules were observed from the second days of steeping The density, amylose content, phosphorus and lipid content were decreased. Relative crystallinity of starch reached the highest value at 4th day of steeping and decreased thereafter. The changes in enthalpy of gelatinization were similar. Starch was resistant to acid or enzymatic hydrolysis and showed lower values for swelling power and amylograph viscosities.

• Transactions on Electrical and Electronic Materials
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• v.6 no.2
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• pp.51-56
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• 2005

Ferroelectric Bi$_{3.35}$Sm$_{0.65}$Ti$_{3}$O$_{12}$(BSmT) thin films were synthesized using a sol-gel process. Bi(TMHD)$_{3}$, Sm$_{5}$(O$^{i}$Pr)13, Ti(O$^{i}$Pr)4 were used as the precursors, which were dissolved in 2­methoxyethanol. The BSmT thin films were deposited on Pt/TiO$_{x}$/SiO$_{2}$/Si substrates by spin­coating. The electrical properties of the thin films were enhanced using rapid thermal annealing process (RTA) at 600 $^{circ}$C for 1 min in O$_{2}$. Thereafter, the thin films were annealed from 600 to 720 $^{circ}$C in oxygen ambient for 1 hr, which was followed by post-annealed for 1 hr after depositing a Pt electrode to enhance the electrical properties. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to analyze the crystallinity and surface morphology of layered perovskite phase, respectively. The remanent polarization value of the BSmT thin films annealed at 720 $^{circ}$C after the RTA treatment was 35.31 $\mu$C/cmz at an applied voltage of 5 V.

• Journal of the Korean Wood Science and Technology
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• v.48 no.1
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• pp.41-49
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• 2020

Jabon (Anthocephalus cadamba) is a fast-growing wood species that is widely utilized for light construction and other purposes in Indonesia. The objectives of the current study were to determine the effects of monoethylene glycol (MEG) and SiO₂ nanoparticles (nano SiO₂) impregnation treatment on the dimensional stability and density of jabon wood and to identify the characteristics of impregnated jabon wood. Wood samples were immersed in water (as untreated), MEG, 0.5% MEGSiO₂, then impregnated by applying 0.5 bar of vacuum for 60 min, and then applying 2.5 bar of pressure for 120 min. The results showed that impregnation with MEG and Nano SiO₂ had a significant effect on the dimensional stability of jabon wood. Polymers can fill cell walls in wood indicated by increasing weight percentgain, antiswelling efficiency, bulking effect, and density, then decreasing in water uptake value. Jabon wood morphology by using SEM showed that MEGSiO₂ polymers can cover part of the pitsin the wood vessel wall of jabon. This finding was reinforced by EDX results showing that the silicon content was increased due to the addition of SiO₂ nano. The XRD diffraction pattern indicated that MEGSiO₂ treatment increased the degree of crystallinity in wood samples. Overall, treatment with 0.5% MEGSiO₂ led to the most improvement in the dimensional stability of 5-year-old jabon wood in this study.

• Journal of Convergence for Information Technology
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• v.11 no.2
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• pp.10-15
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• 2021

In this paper, we formed perovskite (CH3NH3PbI3) thin films on glass with wet coating methods, and used various analytical techniques to discuss film thickness, surface roughness, crystallinity, composition, and optical property. The coated semiconductor material has no defects and is uniform, the surface roughness value is very small, and a high absorption rate has been observed in the visible light area. Next, in order to implement the hole shape in the organic-inorganic layer, Samples in the order of a metal mask with holes at regular intervals, a glass coated with a perovskite material, and a magnet were etched with atmospheric pressure plasma equipment. The shape of the hole formed in the perovskite material was analyzed by changing the time. It can be seen that more etching is performed as the time increases. The sample with the longest processing time was examined in more detail, and it was classified into 7 regions by the difference according to the location of the plasma.

• Journal of the Korean institute of surface engineering
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• v.34 no.5
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• pp.503-509
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• 2001

Thin films of hydrogenated amorphous silicon (a-Si : H) and hydrogenated amorphous silicon carbide (a-SiC:H) of different compositions were deposited on Si(100) wafer and glass by RF plasma-enhanced chemical vapor deposition (RF-PECVD). In the present work, we have investigated the effects of the RF power on the properties, such as optical band gap, transmittance and crystallinity. The Raman data show that the a-Si:H material consists of an amorphous and crystalline phase for the co-presence of two peaks centered at 480 and $520 cm^{-1}$ . The UV-VIS data suggested that the optical energy band gap ($E_{g}$ ) is not changed effectively with RF power and the obtained $E_{g}$(1.80eV) of the $\mu$c-Si:H thin film has almost the same value of a-Si:H thin film (1.75eV), indicating that the crystallity of hydrogenated amorphous silicon thin film can mainly not affected to their optical properties. However, the experimental results have shown that$ E_{g}$ of the a-SiC:H thin films changed little on the annealing temperature while $E_{g}$ increased with the RF power. The Raman spectrum of the a-SiC:H thin films annealed at high temperatures showed that graphitization of carbon clusters and microcrystalline silicon occurs.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.1
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• pp.70-75
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• 1997

An improved technique based upon an electron beam evaporation system has been developed to prepare cubic thin films In crystalline semiconductors. Zinc blonde CdSe epilayers were grown on GaAs(100) substrate by an e-beam evaporation method. The lattice parameter obtained from (400) reflection is $6.077\AA$, which is in excellent agreement with the value reported in the literature for zinc blonde CdSe. The orientation of the as-grown CdSe epilayer is determined by electron channeling patterns. The crystallinity of epitaxial CdSe layers were investigated on the double crystal X-ray rocking curve. The carrier concentration and mobility of epilayers deduced by Hall effect measurement are about $10^{18}{\textrm}{cm}^{-3}$, $10^2\textrm{cm}^2/V{\cdot}sec$ at room temperature, respectively. The photocurrent spectrum peak of the epilayer at 30 K exhibits a sharp change at 1.746 eV due to the free exciton of cubic CdSe.

• Nuclear Engineering and Technology
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• v.55 no.1
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• pp.278-284
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• 2023

The synthetic B₂O₃-As₂O₃ glass ceramic are prepared to investigate the physical properties and the radiation shielding capabilities with the variation of concentration of the As₂O₃ with 10, 20, 30, and 40%, respectively. XRD analyses are performed on the fabricated glass-ceramic and depicted the improvement of crystallinity by adding As₂O₃. The radiation shielding properties are studied for the B₂O₃-As₂O₃ glass ceramic. The values of linear attenuation coefficient (LAC) are varied with the variation of incident photon gamma energy (23.1-103 keV). The LAC values enhanced from 12.19 cm^-1-37.75 cm^-1 by raising the As₂O₃ concentration from 10 to 40 mol% at low gamma energy (23.1 keV) for BAs10 and BAs40, respectively. Among the shielding parameters, the half-value layer, transmission factor, and radiation protection efficiency are estimated. Furthermore, the fabricated samples of glass ceramic have low manufacturing costs and good shielding features compared to the previous work. It can be concluded the B₂O₃-As₂O₃ glass ceramic is appropriate to apply in X-ray or low-energy gamma-ray shielding applications.

• Journal of Electrochemical Science and Technology
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• v.14 no.4
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• pp.388-396
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• 2023

Photoelectrochemical (PEC) water splitting is a vital source of clean and sustainable hydrogen energy. Moreover, the large-scale H₂ production is currently necessary, while long-term stability and high PEC activity still remain important issues. In this study, a GaN-based photoelectrode was modified by an additional NH₃ treatment (900℃ for 10 min) and its PEC behavior was monitored. The bare GaN exhibited a highly crystalline wurtzite structure with the (002) plane and the optical bandgap was approximately 3.2 eV. In comparison, the NH₃-treated GaN film exhibited slightly reduced crystallinity and a small improvement in light absorption, resulting from the lattice stress or cracks induced by the excessive N supply. The minor surface nanotexturing created more surface area, providing electroactive reacting sites. From the surface XPS analysis, the formation of an N-Ga-O phase on the surface region of the GaN film was confirmed, which suppressed the charge recombination process and the positive shift of E_FB. Therefore, these effects boosted the PEC activity of the NH₃-treated GaN film, with J values of approximately 0.35 and 0.78 mA·cm^-2 at 0.0 and 1.23 V_RHE, respectively, and an onset potential (V_on) of -0.24 V_RHE. In addition, there was an approximate 50% improvement in the J value within the highly applied potential region with a positive shift of V_on. This result could be explained by the increased nanotexturing on the surface structure, the newly formed defect/trap states correlated to the positive V_on shift, and the formation of a GaO_xN_1-x phase, which partially blocked the charge recombination reaction.

• Journal of the Korean Applied Science and Technology
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• v.40 no.5
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• pp.1116-1125
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• 2023

Zinc oxide film is a transparent conductive material and is used in optoelectronic devices in various fields. Therefore, characterization of the zinc oxide film will play a very important role in improving the performance of optoelectronic devices. Here, we will evaluate the morphological and structural characteristics of such a zinc oxide film based on the solution process. Specifically, the sol-gel method will be repeatedly performed to observe the change in material properties of the zinc oxide film according to the number of times of spin-coating. It was confirmed that crystallization proceeded as a result of performing the sol-gel method repetitively 5 times under constant solution conditions. At 7 times or more, the element composition and crystallinity tended to converge to a specific value. The average crystal size of the final zinc oxide film was calculated to be about 10.7 nm. In this study, the number of processes showing optimal crystallization was 7 times. The results and methodology of this study can be applied while varying various solution process variables and are expected to contribute to establishing optimal process conditions.

• Journal of Powder Materials
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• v.30 no.5
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• pp.394-401
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• 2023

Li_1.5Al_0.5Ti_1.5(PO₄)₃ (LATP) is considered to be one of the promising solid-state electrolytes owing to its excellent chemical and thermal stability, wide potential range (~5.0 V), and high ionic conductivity (~10^-4 S/cm). LATP powders are typically prepared via the sol-gel method by adding and mixing nitrate or alkoxide precursors with chelating agents. Here, the thermal properties, crystallinity, density, particle size, and distribution of LATP powders based on chelating agents (citric acid, acetylacetone, EDTA) are compared to find the optimal conditions for densely sintered LATP with high purity. In addition, the three types of LATP powders are utilized to prepare sintered solid electrolytes and observe the microstructure changes during the sintering process. The pyrolysis onset temperature and crystallization temperature of the powder samples are in the order AC-LATP > CA-LATP > ED-LATP, and the LATP powder utilizing citric acid exhibits the highest purity, as no secondary phase other than LiTi₂PO₄ phase is observed. LATP with citric acid and acetylacetone has a value close to the theoretical density (2.8 g/cm³) after sintering. In comparison, LATP with EDTA has a low sintered density (2.2 g/cm³) because of the generation of many pores after sintering.