• 한국섬유공학회:학술대회논문집
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• 한국섬유공학회 2003년도 The Korea-Japan Joint Symposium
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• pp.83-84
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• 2003

The microstructure and tensile properties of ramie treated with NaOH and crosslinked with 1, 2, 3, 4-butanetetracarboxylic acid were characterised. X-ray diffraction and FTIR were used to study the crystalline structure o f the resultant ramie yarns. Results showed that the maximum change in the structure of the modified ramie took place at 16% NaOH, which would completely transform Cellulose I to Cellulose II. Also, the crystallinity index and fibre orientation decreased to the minimum value while the absorption properties were enhanced. The average degree of polymerization of the treated ramie yams slightly decreased after NaOH treatment.

• 한국전기전자재료학회논문지
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• 제22권3호
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• pp.277-283
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• 2009

In this paper, aluminum doped zinc oxide (ZnO:Al) thin films on plastic substrate such as poly carbonate (PC), polyethylene terephthalate (PET) were prepared by RF magnetron sputtering method for flexible solar cell applications. Effects of the sputter pressure on the structural, electrical and optical properties were investigated. The crystallinity and the degree of the (002) orientation were deteriorated with increasing the sputter pressure. When the sputter pressure was higher, the conductivity of ZnO:Al films was improved because of the high carrier concentration and the Hall mobility. High quality ZnO:Al films with resistivity as low as $1.9{\times}10^{-3}{\Omega}-cm$ and the optical transmittance over 80 % in the visible region have been obtained on PC substrate at 2 mTorr.

• 한국염색가공학회지
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• 제13권5호
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• pp.1-1
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• 2001

As the basic study to investigate the mechanism of improvement in the dyeing fastness of natural dyes on silk fabrics the optical behavior of tannin solution, the optimal condition of tannin treatment and the changes of the physical structure of silk fabrics were studied in the treatment of tannin. Results obtained were as follows ; 1.The K/S values of tannin-treated silk fabrics were not changed by tannin content on silk fabrics but yellowing of tannin in treatment condition. 2. As the concentration of tannin was increased in its treating condition, the tannin content and K/S vague of tannin-treated silk fabrics were increased. 3. Because tannin gave rise to yellowing by hydrolysis and oxidation at high temperature, the higher tannin-treating temperature was, the lower the tannin content and K/S values of silk fabrics 4. The tannin content of silk fabric was higher in acidic treating condition and the highest K/S value was showed at pH 5. 5. As the tannin content of silk fabric was increased, the value of ζ -potential of it became negative. 6. As the tannin content of silk fabric was increased, the crystallinity and crystallite size of it were decreased. This meant that the fraction of amorphous region in the fibers increased. And the degree of orientation of it was decreased with the tannin treatment.

• 한국염색가공학회지
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• 제13권5호
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• pp.289-297
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• 2001

As the basic study to investigate the mechanism of improvement in the dyeing fastness of natural dyes on silk fabrics the optical behavior of tannin solution, the optimal condition of tannin treatment and the changes of the physical structure of silk fabrics were studied in the treatment of tannin. Results obtained were as follows ; 1 The K/S values of tannin-treated silk fabrics were not changed by tannin content on silk fabrics but yellowing of tannin in treatment condition. 2. As the concentration of tannin was increased in its treating condition, the tannin content and K/S vague of tannin-treated silk fabrics were increased. 3. Because tannin gave rise to yellowing by hydrolysis and oxidation at high temperature, the higher tannin-treating temperature was, the lower the tannin content and K/S values of silk fabrics 4. The tannin content of silk fabric was higher in acidic treating condition and the highest K/S value was showed at pH 5. 5. As the tannin content of silk fabric was increased, the value of $\xi$ -potential of it became negative. 6. As the tannin content of silk fabric was increased, the crystallinity and crystallite size of it were decreased. This meant that the fraction of amorphous region in the fibers increased. And the degree of orientation of it was decreased with the tannin treatment.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.330-333
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• 2002

The substrate temperature is an important parameter in thin film deposition process. In this paper the effects of the substrate temperature on the properties of CuIn0.75Ga0.25Se2(CIGS) thin films are reported. Structure, surface morphology and optical properties of CIGS thin films deposited at various substrate temperatures have been investigated using a number of analysis techniques. X-ray diffraction (XRD) analysis shows that CIGS films exhibit a strong <112> preferred orientation. As expected, at higher substrate temperatures the films displayed a higher degree of crystallinity. The <112> peak was also enhanced and other CIGS peaks appeared simultaneously These results were supported by experimental work using Raman spectroscopy. The Raman spectra of the as-grown CIGS thin films show only the Al mode peak. The intensity of this peak was enhanced at higher deposition temperatures. Scanning electron microscopy (SEM) results revealed very small grains in films fabricated at 48$0^{\circ}C$ substrate temperature. When the substrate temperature was increased the average grain size also increased together with a reduction in the number and size of the voids. The deposition temperature also had a significant influence on the transmission spectra.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.383-386
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• 2002

Polycrystalline Cu(In,Ga)Se$_2$(CIGS) thin-films were grown by co-evaporation on a soda lime glass substrate. In this paper the effects of the Se evaporation temperature on the properties of CuIn0.75Ga0.25Se2 (CIGS) thin films. Structure, surface morphology and optical properties of CIGS thin films deposited at various Se evaporation temperatures have been investigated using a number of analysis techniques. X-ray diffraction (XRD) analysis shows that CIGS films exhibit a strong <112> preferred orientation. As expected, at higher Se evaporation temperatures the films displayed a lower degree of crystallinity. The <112> peak was also enhanced and other CIGS peaks appeared simultaneously. These results were supported by experimental work using scanning electron microscopy When the Se evaporation temperature was increased, the average grain size also decreased together with a reduction Cu content. The Se evaporation temperature also had a significant inf1uence on the transmission spectra. Increasing the Se evaporation temperature, the cell efficiency was improved dramatically to 11.75% with Voc = 556 mV, Jsc = 32.17 mA/cm2 and FF = 0.66. The Se evaporation temperature is an important parameter in thin film deposition regardless of the deposition technique being used to deposit thin films

• 한국조명전기설비학회지:조명전기설비
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• 제6권5호
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• pp.27-37
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• 1992

We studied the dielectric and dynamic mechanical losses according to the quenching condition in low density polyethylene being used to power cables. According to severe quenching condition, characteristics of the temperature in internal friction los peak have decreased the magnitude of loss peak as amorphous region lengthen. From now on, the frequency dependent characteristics of dielectric loss have investigated at room temperature, and the dielectric loss peak due to interface polarization, between crystal and amorphous region, occurs about 30[Hz], and that, the peak due to orientation polarization in correspondence to the loss peak in internal friction has observed at about 3 [MHz]. As quenching velocity increased, the effect on quenching condition about the dielectric loss has decreased the magnitude of the loss peak. Thus, estimation has been carried out on the activation energies nd the degree of crystallinity by means of X-ray diffraction are obtained as follows: room quenching : 26.4 [kal/mole] and 54.73 [%], ice quenching : 25.6 [kcal/mole] and 48.47 [%], liquid nitrogen quenching specimens : 22.56 [kcal/mole] and 40.95 [%].

• 폴리머
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• 제30권6호
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• pp.563-567
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• 2006

생체 적합성이 우수한 gelatin(GEL)과 기계적 물성이 뛰어난 poly(vinyl alcohol)(PVA)로 이루어진 블렌드막을 $3{\sim}10kV$의 고전장하에서 용액 캐스팅 법에 의해 제조하였고, 막중에 형성되는 미세한 domain 구조의 배향에 미치는 전장의 효과를 조사하였다. 5 kV이상의 높은 전장하에서 제조된 막의 경우 SEM 사진으로부터 막중의 GEL domain이 전장인가 방향으로 배향되어 있음을 관찰하였다. 이는 제막 중 상분리된 두 상의 계면장력 감소에 기인한 Maxwell의 정전 분산 효과에 의한 것으로 해석될 수 있다. 또한, 고전장 인가시 전극 판에서 발생하는 열과 GEL domain의 연신 배향 효과에 의해 PVA/GEL 블렌드막의 결정화도가 증가하는 것을 WAXD와 팽윤거동 관찰을 통해 확인 할 수 있었다.

• 한국재료학회지
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• 제15권8호
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• pp.518-520
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• 2005

Effects of the $O_2/Ar$ flow ratio in the sputtering process on the crystallinity, surface roughness, carrier concentration, carrier mobility, and optical properties of Al-doped ZnO thin films deposited on sapphire (001) substrates by RF magnetron sputtering were investigated. XRD spectra showed a preferred orientation along the c-axis and a minimum FWHM of the (002) XRD intensity peak for the $O_2/Ar$ flow ratio of 0.5. The (101)peak also appeared and the degree of preferred orientation decreased as the $O_2/Ar$ flow ratio increased from 0.5 to 1.0. AFM analysis results showed that the surface roughness was lowest at the $O_2/Ar$ flow ratio of 0.5 and tended to increase owing to the increase of the grain size as the $O_2/Ar$ flow ratio increased further. According to the Hall measurement results the carrier concentration and carrier mobility of the fan decreased and thus the resistivity increased as the $O_2/Ar$ flow ratio increased. The transmittance of the ZnO:Al film deposited on the glass substrate was characteristic of a standing wave. The transmittance increased as the $O_2/Ar$ flow ratio in-RF magnetron sputtering increased up to 0.5. Considering the effects of the $O_2/Ar$ flow ratio on the surface roughness, electrical resistivity and transmittance properties of the ZnO:Al film the optimum $O_2/Ar$ flow ratio was 0.5 in the RF magnetron sputter deposition of the ZnO:Al film.

• 한국정보통신학회논문지
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• 제14권1호
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• pp.191-196
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• 2010

본 연구에서는 타겟 제작에 드는 비용을 줄이고, 타겟 이용의 효율성을 높이기 위해 기존의 소결된 세라믹 타겟 대신 분말 타겟으로 사용하여 알루미늄 도핑된 산화아연(Aluminum doped zinc oxde; AZO)박막을 마그네트론 스퍼터법에 의해 제조하고, 스퍼터 압력에 따른 박막 물성을 조사하였다. 유리 기판에 증착된 AZO 박막은 타깃 종류 및 스퍼터 압력에 관계없이 기판에 수직한 c-축 방향으로 우선 성장방위를 갖는 hexagonal 구조로 성장되었다. 스퍼터 압력이 증가함에 따라 이 면 방향으로의 결정성장이 촉진되었다. AZO 박막의 전기적, 광학적 특성은 스퍼터 압력 증가에 따라 향상되었으며, 15 mTorr에서 $6.5{\times}10^{-1}\;{\Omega}-cm$의 최소의 비저항 값을 나타내었다.