• Journal of the Korean Society for Heat Treatment
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• v.13 no.5
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• pp.318-323
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• 2000

The planarization of rough polycrystalline diamond films synthesized by DC arc discharge plasma jet CVD (chemical vapor deposition) was attempted using KrF excimer laser pulses. The effects of laser incidence angle and reaction gases (ozone and oxygen) on etching rate of diamond were studied. The temperature change of diamond and graphite with different laser fluences was calculated by computer simulation to explain the etching behavior of diamond films. The threshold energy density from the experiment for etching of pure crystalline diamond was about $1.7J/cm^2$ and fairly matched the simulation value. Preferential etching of a particular crystallographic plane was observed through scanning electron microscopy. The etching rate of diamond with ozone was lower than that with oxygen. When the angle of incidence was $80^{\circ}$ to the diamond surface normal, the peak-to-valley surface roughness was Significantly reduced from $20{\mu}m$ to $0.5{\mu}m$.

• Proceedings of the Materials Research Society of Korea Conference
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• 2002.05a
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• pp.132-132
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• 2002

Diamond is well known as the hardest material in nature. It also has other unique bulk physical and mechanical properties, such as very high thermal conductivity and broad optical transparency, which enable a number of new applications now that large areas of diamond can be fabricated by the new diamond plasma chemical vapor deposition (CVD) technologies. A study on the effects of growth kinetics and properties of diamond films obtained by addition of argon (~7 vol. %) into the methane/hydrogen mixture is carried out using HFCVD system. A negative bias was used as a nucleation enhancement method in addition to the argon dilution. The scanning electron microscopy (SEM) image of surface morphology shows well faceted crystallites with a predominance of angular shapes corresponding to <100> and <110> crystalline surfaces. The nucleation density and growth rate with argon dilution is two orders of magnitude higher than without argon deposition. The Raman spectra show a good quality film whereas XPS spectra show existence of only diamond phase.

• The Korean Journal of Ceramics
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• v.2 no.4
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• pp.184-187
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• 1996

Diamod nucleation by mw assisted CVD was examined various conditions namely, (1) diamond nucleation on variour substrate materials, such as Si, cubic BN, pyrolytic BN and AIN, (2) AST(Activated species transport) method which promote nucleation of diamond on single crystal and polycrystalline alumina substrate was developed. (3) Effect of bias enhancement of nucleation on single crystalline Si was examined, and finally (4) DST (Double step treatment) method was developed to enhance diamond nucleation on Ni. In this method, we separated carbon diffusing process into Ni, carbon precipitating process from the inside of Ni and diamond precipitation process.

• Korean Journal of Materials Research
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• v.10 no.9
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• pp.648-655
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• 2000

Synthesis of the crystalline film was investigated under the diamond growth condition with altering the addition of the nitrogen from 0% to 95%. With increasing the nitrogen concentration, surface morphology of the film was changed from the diamond film with {100} growth plane to the non-faceted diamond film with nano-scale grains. It also showed that the deposition of the diamond film could be synthesized using only methane and nitrogen gases without hydrogen gas. Separated particles with diamond structure showed an octahedral shaped I the nitrogen ranges between 30% and 80%, and newly formed hexagonal crystals are observed when substrate temperature with diamond structure, however, also identify that the hexagonal crystal was SiCN composite composed of Si, C and N atoms.

• Journal of the Mineralogical Society of Korea
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• v.10 no.1
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• pp.18-32
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• 1997

Analysis of geological data, relating to occurrence and formation of diamonds as well as host rocks, inclined author to have different outlook on the diamond genesis and to establish a proposition on their formation at pneumatolytic-hydrothermal conditions near superficial Earth zones. Based on that theoretical foundations and experimental works, the first low-pressure and low-temperature hydrothermal diamond synthesis from water solution in pressure autoclave was executed. As a result, the natural diamond seed crystal grew bigger ad coupling of the synthetic diamond single-crystalline grains were obtained. SEM documentation proofs that parallely paragenetic crystallization of quartz and diamond, and nucleation of new octahedral diamond crystals brush take place on the seed crystal surface. Forecast of none times growth of diamond industrial application at 2000 and seventeen times at 2010 with reference to 1995, needs technology of large and pure single-crystals diamond synthesis. Growth of the stable and destressed diamond single-crystals in the pseudo-metastable diamond plot, may be realized with processes going through the long time and with participation of free radicals catalysts admixtures only. Sol-gel colloidal processes are an example of environment which form stable crystals in thermodynamically unstable conditions through a long time. Paper critically discusses a whole way of studies on the diamond synthesis, from high-pressure and high-temperature processes through chemical vapour deposition up to hydrothermal experiments.

• Composites Research
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• v.24 no.4
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• pp.23-28
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• 2011

Recently CFRP laminate joints process by bolts and nets are developed rapidly in aircraft industries. However, there are serious drawback during jointing process. Many hole processes are needed for the manufacturing and structural applications using composite materials. Generally, very durable polycrystalline crystalline diamond (PCD) drill has been used for the CFRP hole process. However, due to the expensive price and slow process speed, chemical vapor deposition (CVD) diamond drill has been used increasingly which are relatively-low durability but easily-adjustable process speed via drill shape change and price is much lower. In this study, the comparison of hole process between PCD and CVD diamond coated drills was done. First of all, CFRP hole processbility was evaluated using the equations of hole processing conditions (feed amount per blade, feed speed). The comparison on thermal damage occurring from the CFRP specimen was also studied during drilling process. Empirical equation was made from the temperature photo profile being taken during hole process by infrared thermal camera. In addition, hole processability was compared by checking hole inside condition upon chip exhausting state for two drills. Generally, although the PCD can exhibit better hole processability, hole processing speed of CVD diamond drill exhibited faster than PCD case.

• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.1700-1702
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• 2004

Diamond films including nanocrystallites are grown by microwave plasma chemical vapor deposition using $O_2$ additives and negative substrate bias at growth step. Effects of growth parameters on film properties are characterized by Raman spectra, SEM, and AFM images. It is found that the surface roughness and the microstructure of grown films can be controlled by changing $O_2$ gas ratio. The I-V characteristics are also investigated in terms of growth conditions of diamond films. The surface roughness and the $sp^2$ phase of the grown diamond films turn out to be crucial factors for reducing leakage currents at diamond/metal interfaces.

• Journal of the Korean Society for Precision Engineering
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• v.13 no.5
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• pp.122-130
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• 1996

In this study, machinability of some aluminum-magnesium alloy are experimentally investigated using polycrystalline diamond tool with turning, and evaluated some independent cutting variables affected micrometal cutting characteristics as cutting force, specific cutting resistance, shear angles. To know the effect of cutting parameters of single point diamond machining, experiments were performed to measure cutting forces for high speed turning of aluminum alloy 6061-T6, SM45C and FC20 with poly- crystalline diamond and coated cemented carbide tool. Independent cutting variables were changed to a variety of cutting speed, feed rate, rake angles, material properties of workpiece and tool. Futhermore. Some useful informations are obtained in this study can guide micro metal cutting of aluminum alloy with diamond tool.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.3
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• pp.229-233
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• 2011

Diamond thin films were deposited on pretreated Co cemented tungsten carbide (WC-6%Co) inserts as substrate by microwave plasma chemical vapor deposition (MPCVD) system, equipped with a 915MHz, 30kW generator for generating a large-size plasma. The substrates were pretreated with two solutions Murakami solution $[KOH:K_3Fe(CN)_6:H_2O]$ and nitric solution $[HNO_3:H_2O]$ to etch, WC and Co at cemented carbide substrates, respectively. The deposition experiments were performed at an input power of 10 kW and in a total pressure of 100 torr. The influence of various $CH_4$ contents on the crystallinity and morphology of the diamond films deposited in MPCVD was investigated using scanning electron microscopy (SEM) and Raman spectroscopy. The diamond film synthesized by the $CH_4$ plasma shows a triangle-faceted (111) diamond. As $CH_4$ contents was increased, the thickness of diamond films increased and the faceted planes disappeared. Finally, Faceted diamond changed into nano-crystalline diamond with random crystallinity.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1542-1545
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• 2002

Experimental works were performed to implement the hetero-epitaxial growth of diamond films on the (100)- and (111)-oriented Si substrates. The deposition process used to prepare diamond films consisted of a bias-enhanced nucleation(BEN) step, accompanied with a growth step using a microwave plasma CVD system. The highly oriented diamond films were deposited under the growth condition of relatively low methane concentrations and high temperatures. Material properties and surface morphologies of deposited diamond films were improved by the addition of carburization step into the deposition process.