• Progress in Superconductivity
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• v.9 no.1
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• pp.85-90
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• 2007

Lanthanum aluminate($LaAlO_3$) film has been prepared on single crystal and metal substrates by dip coating method. Lanthanum acetate and aluminum were prepared via ligand exchange starting from lanthanum nitrate hexahydrate and aluminum nitrate hexahydrate in acetate glacial acetic acid solution after being refluxed. Coating solution was obtained by diluting the gel with methanol and 2-methoxyethanol to adjust the total cation concentration to 0.67 M. Precursor coated film was prepared by dip-coating with a speed of 25 mm/min on various substrates such as $LaAlO_3$ (001), MgO(001), $SrTiO_3$(001) single crystal, LMO/MgO/Ni-alloy. Thin films have been obtained by heat treating the precursor film at various temperatures from $600^{\circ}C{\sim}900^{\circ}C$ and various heating rate from $0.83^{\circ}C/min{\sim}1.25^{\circ}C/min$ under $Ar/O_2$ mixture containing 1000ppm oxygen. The films have been characterized by scanning electronic microscopy (SEM) and X-ray diffraction (XRD). XRD analysis for the prepared film showed that $LaAlO_3$ thin films with a preferred orientation of (100) plane parallel to substrate surface were obtained at $800^{\circ}C(1.11\;^{\circ}C/min)$ on LMO/MgO/Ni-alloy substrate, but the intensity decreased with the increase of heat treatment temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.05a
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• pp.234-238
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• 1995

In this parer, by means of adding nonsuperconductive phase sliver into YBCO matrix, the superconductivity of Melted Texture Growth (MTG) YBa$_2$Cu$_3$O$\_$7-x/ was improved remarkably. In order to eliminate the crack inthe YBCO and the weak linkin the grain boundary, Ag contents from 2wt% to 18Wt% were doped in the YBCO It was found that J$\_$c/ of YBCO increase with the increasing Ag content till 14 wt% over 14wt% of Ag content, the Jc tends to stable . The grain size of YBCO became fine when Ag was added in the YBCO and X-ray diffraction showed that the YBCO crystal prepared by the above technique had (001) orientation and growing plane of YBCO was a-b plane. Using Bens medel, the J$\_$c/ was calculated and the best result was J$\_$c/ 76000A$\textrm{cm}^2$(77K, 100Gs).

• Journal of the Korean Applied Science and Technology
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• v.35 no.2
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• pp.350-356
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• 2018

Hydroxyapatite has been used for biomaterials since it has high biocompatibility. In this study, c-plane oriented hydroxyapatite was synthesized by hydrolysis of dicalcium phosphate intermediate by controlling temperature, concentration and pH. In basic condition, rod-like hydroxyapatite crystals were aggregated to form irregular particles in low concentration and plate-like particles exposed c-plane of hydroxyapatite crystal were obtained in high concentration, causing difference of 3 mV in zeta potential. Physicochemical properties of product were characterized by XRD, SEM, FT-IR, zeta potential measurement.

• Korean Journal of Crystallography
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• v.6 no.1
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• pp.14-26
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• 1995

The growth mechanism of diamond thin films, deposited by Hot Filament CVD, was investigated through observation of changes in their surface morphology as a function of the substance temperature and deposition time. Amorphous carbon or DLC thin films were deposited at low substrate temperature. Diamond films consisting of square-shaped particles, whose surfaces are (100) planes, were deposited at an intermedate temperature. At high substrate temperatures, diamond films consisting of the particles showing both (100) and (111) plane were deposited. The (100) proferred orientation of the diamond films are believed to be due to a relatively high supersaturation during deposition, and the growth condition for the diamond films having (100) preferred orientation can be applied to the single crystal growth since no twins are generated on the (100) plane. The grain size of the diamond films did not change with increasing temperature and its increasing rate with increasing deposition time was the same irrespective of the substrate temperature. However, the nucleation density increased with substrate temperature and its increasing rate with deposition time was much higher for the films deposited at higher substrate temperature.

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1174-1177
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• 1995

In this paper, electrical properties CdS/CdTe heterojunction solar cell prepared by electron beam evaporation method were investigated. Crystal structure of CdS films deposited at substrate temperature of $50{\sim}250^{\circ}C$ was hexagonal type with preferential orientation of the (002)plane parallel to the substrate. Optical transmittance of the CdS film is increasing and resistivity is decreasing with increasing subsrate temperature. CdS/CdTe Solar cell characteristics were improved by increasing of substrate and annealing temperature. However, low efficiency due to small Jsc, Voc below 0.3 $mA/cm^2$ and 430 mV are observed. Low efficiency is contributed to be high resistance of CdTe films and contact.

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1178-1180
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• 1995

In this paper, structual, optical and electrical properties of CdTe thin films prepared by electron beam evaporation method were studied. The crystal structure of CdTe films deposited at substrate temperature of $100{\sim}400^{\circ}C$ was zincblend type with preferential orientation of the (111)plane parallel to the substrate. The result of optical absoption and transmittance show that solar radiation with energy larger than band gap is almost completely absorbed within an about $2{\mu}m$ thickness of the evaporated CdTe layer and optical band gap of the CdTe film was larger with increasing substrate temperature. The resistivity of CdTe films deposited on the glass substrate was about $10^5{\sim}10^7{\Omega}cm$.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.20 no.5
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• pp.1516-1523
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• 1996

The present study is concerned with the development of anisotropy and deformation texture in polycrystals. The individual grain in an aggregate is assumed to experience the viscoplastic dedformation with crystallographic slip that unsure uniquenessof the active slip systems and shearing rate onthese systems. Two different methods for updating the grain orientation are examined. Texture development for some deformation modes such as plane strain compression, uniaxial tension and simple shear are found. Changes in anisotropic flow potential due to texture development during large deformation are also given. Anisotropic behavior of polycrystals with defferent textures are examined.

• Proceedings of the KIEE Conference
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• 1995.11a
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• pp.332-334
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• 1995

In this paper, structual, optical properties of CdTe thin films and photovoltaic properties of thin film CdS/CdTe solar cell prepared by thermal vacuum evaporation were studied. The crystal structure of CdTe films was zircblend type with preferential orientation of the (111)plane parallel to the substrate. The heat treatment appears to stabilize this structure. The result of optical absorption and transmittance show that solar radiation with energy larger than bandgap is almost completely absorbed within an about $2{\mu}m$ thickness of the evaporated CdTe layer and transmittance of the CdTe film was larger with increasing annealing temperature. It was found that CdS/CdTe solar cell characteristics were improved by the heat treatment.

• Progress in Superconductivity
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• v.2 no.2
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• pp.57-64
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• 2001

We have calculated the tunneling density of states (TDOS) of a metal/d-wave superconductor proximity junction, where the metal stands fur the normal metal, 5-wave superconductor, and d-wave superconductor. The tunneling direction is through the ab-plane of the d-wave superconductor. Because of the sign change in the order parameter experienced in the multiple Andreev reflection, there appears a finite TDOS at zero bias for duty geometry, which results in the anomalous zero bias conductance peak(ZBCP). For $d_{x2-y2}$ geometry, however, no TDOS peak appears at zero bias. We have calculated TDOS for various crystal orientation of HTSC and compared with the experimental conductance.

• Journal of the Korean Ceramic Society
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• v.27 no.5
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• pp.652-660
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• 1990

Oxidation of Mn-Zn ferrite was made in air at various temperatures ranging from 400$^{\circ}C$ to 1150$^{\circ}C$. Subsequent reduction fo these oxidized samples was also made in air at 1300-1350$^{\circ}C$ where the spinel phase of Mn-Zn ferrite is stable. Morphological observation revealed that the shape of precipitated hematite was plate or lath type on the close-packed habit plane of {111} ferrite which has a definite orientation relationship. The growth of precipitates showed the behavior fo parabolic dependence of the oxidating time. An apparent activation energy for the growth was found to be 125${\pm}$3Kcal/mol. The fact that pores are observed along the precipitates illustrates the oxidation to occur dominantly by the counterdiffusion of cations and ction vacancies. For the reductio reaction pores are found to form at the site once occupied by the precipitates and at the surface. This observation illustrates that the oxygen volitalization from interior region to the surface is the dominant process for the reduction reaction.