• Proceedings of the Korea Association of Crystal Growth Conference
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• 1999.06a
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• pp.305-320
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• 1999

It was grown Er2O3 doped LiNbO3 single crystal thin films with high crystal quality by liquid phase epitaxial (LPE) method. Er2O3 was doped with a concentration of 1, 3, and 5 mol% respectively. After the growth of single crystal thin film, we examined the crystallinity and the lattice mismatch along the c-axis between the film and the substrate with the variation of Er2O3 dopant using X-ray double crystal technique. There were no lattice mismatches along the c-axis for the undoped and the films doped with 1 and 3 mol% of Er2O3. For 5 mol% of Er2O3 doped film, there was a lattice mismatch of 7.86x10-4nm along the c-axis.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.3
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• pp.295-298
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• 1999

High quality of $Er_{2}O_{3}$ doped $LiNbO_{3}$ single crystal thin films were grown by the liquid phase epitaxial (LPE) method using $Er_{2}O_{3}$ doped at concentrations of 1,3, and 5 mol% respectively. After the growth of single crystal thin film, the crystallinity and the lattice mismatch along the c-axis between the film and the substrate was examined as a function of the variations of{{{{{Er}_{2}{O}_{3}}}}} dopant concentration using a X-ray double crystal technique. There was no lattice mismatch along the c-axis for the undoped film and those doped with 1 and 3 mol% of $Er_{2}O_{3}$. For 5 mol% of $Er_{2}O_{3}$ doped film, the lattice mismatch was $7.86{\times}10^{-4}$nm along the c-axis.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.3
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• pp.293-300
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• 1996

A continuous growth method (Orr's method) were developed to grow LiNbO3 single crystals. The optimum growth condition established are as follows; When the controlled temperature of a platinum crucible were 1190℃∼1210℃, the pulling rate was 2 mm/hr, the feeding rate was 1.5∼2.5 g/hr, and the rotation speed was 20 rpm. The phase and growth orientation of the grown LiNbO3 crystals wer characterized by a X-ray diffraction method. The overflowing phenomena, which induced cracking into the grown crystal during the process, was effectively suppressed by the control of the growth parameter.

• Journal of the Korean Society for Nondestructive Testing
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• v.36 no.1
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• pp.1-8
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• 2016

Single crystalline silicon wafers having (100), (110), and (111) directions are employed as specimens for obtaining slowness profiles. Leaky Lamb waves (LLW) from immersed wafers were detected by varying the incident angles of the specimens and rotating the specimens. From an analysis of LLW signals for different propagation directions and phase velocities of each specimen, slowness profiles were obtained, which showed a unique symmetry with different symmetric axes. Slowness profiles were compared with elastic moduli of each wafer. They showed the same symmetries as crystal structures. In addition, slowness profiles showed expected patterns and values that can be inferred from elastic moduli. This implies that slowness profiles can be used to examine crystal structures of anisotropic solids.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 2000.06a
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• pp.87-125
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• 2000

A new paradigm of crystal growth was suggested in a charged cluster model, where charged clusters of nanometer size are suspended in the gas phase in most thin film processes and are a major flux for thin film growth. The existence of these hypothetical clusters was experimentally confirmed in the diamond and silicon CVD processes as well as in gold and tungsten evaporation. These results imply new insights as to the low pressure diamond synthesis without hydrogen, epitaxial growth, selective deposition and fabrication of quantum dots, nanometer-sized powders and nanowires or nanotubes. Based on this concept, we produced such quantum dot structures of carbon, silicon, gold and tungsten. Charged clusters land preferably on conducting substrates over on insulating substrates, resulting in selective deposition. if the behavior of selective deposition is properly controlled, charged clusters can make highly anisotropic growth, leading to nanowires or nanotubes.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.6
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• pp.378-380
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• 2000

The epitaxial $BaTiO_{3}$ thin film was prepared on the MgO substrate by the coating-pyrolysis process using a mixed solution of Ba-naphthenate and Ti-naphthenate. The crystal structure of the epitaxial $BaTiO_{3}$ thin film was characterized by XRD ${\theta}/2{\theta}$ scan and asymmetric {303} rocking curve scan. The epitaxial $BaTiO_{3}$ thin film had the cubic phase with the lattice parameter of a = c = 0.4018 nm.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.3
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• pp.315-324
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• 1994

The effects of impurities of the quartz raw materials on the trasformation of quartz to cristobalite were investigated. As the increase of impurities content, the amount of cristobalite crystal increased, whereas the fusion temperature of quartz and the formation temperature of cristobalite decreased. And the courses of the transformation of quartz to cristobalite were examined. The course of quartz $\rightarrow$ transitional noncrystalline phase $\rightarrow$ melt (T) and quartz $\rightarrow$ transitional noncrystalline phase $\rightarrow$ cristobalite $\rightarrow$ melt (C) were always coexisted on the transformation of quartz. In the case of high purity quartz raw material, the T course was predominant, while in low purity quartz raw material, the C course was predominant. And the calculated density of heat treated sand by the quantitative analysis of quartz and cristobalite phase by XRD is well agreed with the measured density by pycnometer. On the melting proces of quartz glass, the volume expansion of sand at a certain temperature can be estimated with the calculated density data.

• Korean Journal of Metals and Materials
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• v.46 no.2
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• pp.69-79
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• 2008

A composition consisting of 10 nm-Ni/1 nm-Pd/(30 nm or 70 nm-poly)Si was thermally annealed using rapid thermal for 40 seconds at $300{\sim}1100^{\circ}C$ to improve the thermal stability of conventional nickel monosilicide. The annealed bilayer structure developed into $Ni(Pd)Si_x$, and the resulting changes in sheet resistance, microstructure, phase, chemical composition, and surface roughness were investigated. The silicide, which formed on single crystal silicon, could defer the transformation of $NiSi_2$, and was stable at temperatures up to $1100^{\circ}C$. It remained unchanged on polysilicon substrate compared with the sheet resistance of conventional nickel silicide. The silicides annealed at $700^{\circ}C$, formed on single crystal silicon and 30 nm polysilicon substrates exhibited 30 nm-thick uniform silicide layers. However, silicide annealed at $1,000^{\circ}C$ showed preferred and agglomerated phase. The high resistance was due to the agglomerated and mixed microstructures. Through X-ray diffraction analysis, the silicide formed on single crystal silicon and 30 nm polysilicon substrate, showed NiSi phase on the entire temperature range and mixed phases of NiSi and $NiSi_2$ on 70 nm polysilicon substrate. Through scanning probe microscope (SPM) analysis, we confirmed that the surface roughness increased abruptly until 36 nm on 30 nm polysilicon substrate while not changed on single crystal and 70 nm polysilicon substrates. The Pd-inserted nickel monosilicide could maintain low resistance in a wide temperature range and is considered suitable for nano-thick silicide processing.

• Economic and Environmental Geology
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• v.32 no.4
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• pp.411-418
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• 1999

Mullitization of halloysite was examined with special attention to the influence of polytypism and impurities on the phase transformation. The phase transformation sequence in halloysite is identical with those in kaolinite and in dickite. Difference in the phase transformation above $1000^{\circ}C$ in kaolin minerals is attributed to the different crystal structures of metakaolins or the effect of impurities. Growth of mullite crytals in the discordered kaolinte including halloysite or illite occurs at about $100^{\circ}C$ lower temperature. Cristobalite is also hardly produced.

• 한국생물공학회:학술대회논문집
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• 2003.04a
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• pp.62-62
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• 2003