• 제목/요약/키워드: Crystal grain size

검색결과 293건 처리시간 0.026초

분자동력학을 이용한 결정립 제어 레오로지 소재의 나노 변형거동 전산모사 (Molecular Dynamics Simulation of Nano-Deformation Behavior of the Grain-Size Controlled Rheology Material)

  • 김정원;윤성원;강충길
    • 소성∙가공
    • /
    • 제14권4호
    • /
    • pp.319-326
    • /
    • 2005
  • In this study, the nano-deformation behavior of semi-solid Al-Si alloy was investigated using a molecular dynamics simulation as a part of the research on the surface crack behavior in thixoformed automobile parts. The microstructure of the grain-size controlled Al-Si alloy consists of primary and eutectic regions. In eutectic regions the crack initiation begins with initial fracture of the eutectic silicon particles and inside other intermetallic phases. Nano-deformation characteristics in the eutectic and primary phase of the grain-size controlled Al-Si alloy were investigated through the molecular dynamics simulation. The primary phase was assumed to be single crystal aluminum. It was shown that the vacancy occurred at the zone where silicon molecules were.

MWPCVD법에 의한 다이아몬드 박막의 제조 및 결정성장 특성 (Preparation and Crystalline Growth Properties of Diamond Thin Film by Microwave Plasma CVD)

  • 김규식;박수길
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 2000년도 하계학술대회 논문집
    • /
    • pp.905-908
    • /
    • 2000
  • The growth properties of diamond grain were examined by Raman spectroscopy and microscope images. Diamond thin films were prepared on single crystal Si wafers by microwave Plasma chemical vapor deposition. Preparation conditions, substrate temperature, boron concentration and deposition time were controlled differently. Prepared diamond thin films have different surface morphology and grain size respectively Diamond grain size was gradually changed by substrate temperature. The biggest diamond grain size was observed in the substrate, which has highest temperature. The diamond grain size by boron concentration was slightly changed but morphology of diamond grain became amorphous according to increasing of boron concentration. Time was also needed to be a big diamond grain. However, time was not a main factor for being a big diamond grain. Raman spectra of diamond film, which was deposited at high substrate temperature, showed sharp peaks at 1334$cm^{-1}$ / and these were characteristics of crystalline diamond. A broad peak centered at 1550$cm^{-1}$ /, corresponding to non-diamond component (sp$^2$carbon), could be observed in the substrate, which has low temperature.

  • PDF

소결법에 의한 다공질 결정화유리의 제조 (Preparation of Porous Glass-Ceramics by the Sintering)

  • 박용완;이준영
    • 한국세라믹학회지
    • /
    • 제31권10호
    • /
    • pp.1218-1230
    • /
    • 1994
  • In manufacturing process of porous glass-ceramics by the filler method, the sintering behaviour of crystallizable glass powder mixed with various salts was studied and also the effects of precipitated crystal phases on the properties of porous glass-ceramics were investigated. Fine-grained crystallizable glass powder was homogeneously mixed with various slat having grain size 100~200 ${\mu}{\textrm}{m}$ and sintered for densification. After washing out the inorganic salt with distilled water, the porous sintered body was heat treated additionly for crystallization. The MgO-Al2O3-SiO2 base glass was used as crystallizable glass powder and the water soluble salts such as K2SO4 and MgSO4 were used as filler. When K2SO4 was used, leucite crystal phase was formed as a result of the ion exchange and porous glass-ceramics which exhibit high temperature resistance and high thermal expansion coefficient of 17$\times$10-6/$^{\circ}C$ could be obtained. On the contrary, when MgSO4 was used, only slight ion exchange is observed and $\mu$-cordierite and $\alpha$-cordierite crystal phases were formed and porous glass-ceramics which exhibit low thermal expansion coefficient schedule were determined with the results of DTA curves, thermal shrinkage curves and XRD patterns analysis. From DTA curves and thermal shrinkage curves, it was found that the sintering densification have been completed at the temperature range of exothermic peak for crystallization. The pore size distributions and pore diameters were measured by mercury porosimeter. The pore diameter of porous glass-ceramics was 10~15 ${\mu}{\textrm}{m}$ when 100~200${\mu}{\textrm}{m}$ grain size of K2SO4 was used and it was 25~30 ${\mu}{\textrm}{m}$ when the same grain size of MgSO4 was used. The porous glass-ceramics K2SO4 used shows bimodal pore size distribution and its porous skeleton structure was ascertained by SEM observation.

  • PDF

순수 스피넬($MgAl_2O_4$)의 입성장 및 소결현상 (Sintering phenomena and grain growth of ultra-fine spinel($MgAl_2O_4$);(II))

  • 이형복;한영환
    • 한국결정성장학회지
    • /
    • 제8권3호
    • /
    • pp.498-502
    • /
    • 1998
  • 순수 스피넬$(MgAl_2O_4)$에 대하여 $1400^{\circ}C$에서 $1700^{\circ}C$까지에 내화온도 범위에서 입자크기(G), 밀도($\rho$), 활성에너지(Q)를 구하고 다른 실험값과 비교 분석하였다. 스피넬에 대한 입자크기와 상대밀도는 매우 유사한 경향을 나타내었다. 이들은 두 개의 뚜렷한 영역을 나타내었는데 상대밀도가 약 85~90%까지의 중간소결단계와 전이-밀도 수준 이상의 마지막 단계, 소결영역으로 나타난다. 입자크기(G)와 밀도($\rho$)의 관계에서 활성화에너지 값은 670-48kJ/mol이었으며 다른 스피넬에서는 넓은 온도 범위에서 약 590kJ/mol이었다. 이 값은 기존의 360~580kJ/mol의 값은 근접하였다.

  • PDF

이방성 결정립 계면에너지의 2차원 결정립 성장에 미치는 효과에 대한 컴퓨터 모사 (Computer simulation of the effects of anisotropic grain boundary energy on grain growth in 2-D)

  • 김신우
    • 한국결정성장학회지
    • /
    • 제22권4호
    • /
    • pp.178-182
    • /
    • 2012
  • 결정립 성장은 여러 가지 재료의 성질에 미치는 큰 영향으로 재료공학에서 매우 중요하다. 그래서 본 연구에서는 PC에서 대규모 상장 모델을 사용하여 이방성 결정립 계면에너지의 2차원 결정립 성장에 미치는 효과를 조사하였다. 컴퓨터 모사에서는 $2000{\times}2000$의 그리드 시스템과 약 7300개의 초기 결정립 개수가 사용되었다. 결정립계 에너지의 이방성의 비, ${\sigma}_{max}/{\sigma}_{min}$는 1부터 3까지 변경되었다. 이방성이 증가함에 따라 결정립 성장 지수, n은 2.05에서 2.37로 증가하였다. 결정립 크기의 분포는 등방성인 경우에는 중앙에 평탄한 영역을 보였으나 이방성의 경우에는 중앙의 평탄한 영역이 사라지고 매우 느리게 사라지는 작은 결정립에 기인하여 작은 결정립 크기의 분포가 약간 증가하였다. 마지막으로 모사된 결정립 미세구조가 이방성에 따라 비교, 분석되었다.

A framework for geometrically non-linear gradient extended crystal plasticity coupled to heat conduction and damage

  • Ekh, Magnus;Bargmann, Swantje
    • Multiscale and Multiphysics Mechanics
    • /
    • 제1권2호
    • /
    • pp.171-188
    • /
    • 2016
  • Gradient enhanced theories of crystal plasticity enjoy great research interest. The focus of this work is on thermodynamically consistent modeling of grain size dependent hardening effects. In this contribution, we develop a model framework for damage coupled to gradient enhanced crystal thermoplasticity. The damage initiation is directly linked to the accumulated plastic slip. The theoretical setting is that of finite strains. Numerical results on single-crystalline metal showing the development of damage conclude the paper.

유도결합 플라즈마를 이용한 마그네트론 스퍼터링으로 증착된 나노결정질 CrN 코팅막의 성장 (Growth Behavior of Nanocrystalline CrN Coatings by Inductively Coupled Plasma (ICP) Assisted Magnetron Sputtering)

  • 서대한;전성용
    • 한국세라믹학회지
    • /
    • 제49권6호
    • /
    • pp.556-560
    • /
    • 2012
  • Nanocrystalline CrN coatings were deposited by DC and ICP-assisted magnetron sputtering on Si (100) substrates. The influences of the ICP power on the microstructural and crystallographic properties of the coatings were investigated. For the generation of the ICP, radio frequency was applied using a dielectric-encapsulated coil antenna installed inside the deposition chamber. As the ICP power increased from 0 to 500W, the crystalline grain size decreased. It is believed that the decrease in the crystal grain size at higher ICP powers is due to resputtering of the coatings as a result of ion bombardment as well as film densification. The preferential orientation of CrN coatings changed from (111) to (200) with an increase in the ICP power. The ICP magnetron sputtering CrN coatings showed excellent surface roughness compared to the DC magnetron sputtering coatings.

알루미늄 유도 결정화를 이용한 대면적 다결정 Si 가상 기판 성장 전략 (A Strategy on the Growth of Large Area Polycrystalline Si Virtual Substrate Using Al-Induced Crystallization)

  • 김도현;박광욱
    • 한국전기전자재료학회논문지
    • /
    • 제37권1호
    • /
    • pp.26-35
    • /
    • 2024
  • Aluminum-induced crystallization (AIC) as a route to reduce the fabrication cost and to obtain polycrystalline Si (p-Si) thin-film of large grain size is a promising alternative of single-crystalline (s-Si) substrate or p-Si thin-film obtained by conventional methods such as solid phase crystallization (SPC) and laser-induced crystallization (LIC). As the AIC process occurs at the interface between a-Si and Al thin-films, there are various process and interface parameters. Also, it directly means that there is a certain parametric window to obtain p-Si of large grain size having uniform crystal orientation. In this article, we investigate the effect of the various process and interface parameters to obtain p-Si of large grain size and uniform crystal orientation from the literature review. We also suggest the potential use of the p-Si as a virtual substrate for the growth of various compound semiconductors in a form of low-dimension as well as thin-film as a way for their monolithic integration on Si.

변형구배 결정소성 유한요소해석법을 이용한 니켈기 다결정 합금의 Hall-Petch 관계 모델링 (Modeling the Hall-Petch Relation of Ni-Base Polycrystalline Superalloys Using Strain-Gradient Crystal Plasticity Finite Element Method)

  • 최윤석;조경목;남대근;최일동
    • 한국재료학회지
    • /
    • 제25권2호
    • /
    • pp.81-89
    • /
    • 2015
  • A strain-gradient crystal plasticity constitutive model was developed in order to predict the Hall-Petch behavior of a Ni-base polycrystalline superalloy. The constitutive model involves statistically stored dislocation and geometrically necessary dislocation densities, which were incorporated into the Bailey-Hirsch type flow stress equation with six strength interaction coefficients. A strain-gradient term (called slip-system lattice incompatibility) developed by Acharya was used to calculate the geometrically necessary dislocation density. The description of Kocks-Argon-Ashby type thermally activated strain rate was also used to represent the shear rate of an individual slip system. The constitutive model was implemented in a user material subroutine for crystal plasticity finite element method simulations. The grain size dependence of the flow stress (viz., the Hall-Petch behavior) was predicted for a Ni-base polycrystalline superalloy NIMONIC PE16. Simulation results showed that the present constitutive model fairly reasonably predicts 0.2%-offset yield stresses in a limited range of the grain size.

Grain Size Effect on Mechanical Properties of Polycrystalline Graphene

  • Park, Youngho;Hyun, Sangil;Chun, Myoungpyo
    • Composites Research
    • /
    • 제29권6호
    • /
    • pp.375-378
    • /
    • 2016
  • Characteristics of nanocrystalline materials are known substantially dependent on the microstructure such as grain size, crystal orientation, and grain boundary. Thus it is desired to have systematic characterization methods on the various nanomaterials with complex geometries, especially in low dimensional nature. One of the interested nanomaterials would be a pure two-dimensional material, graphene, with superior mechanical, thermal, and electrical properties. In this study, mechanical properties of "polycrystalline" graphene were numerically investigated by molecular dynamics simulations. Subdomains with various sizes would be generated in the polycrystalline graphene during the fabrication such as chemical vapor deposition process. The atomic models of polycrystalline graphene were generated using Voronoi tessellation method. Stress strain curves for tensile deformation were obtained for various grain sizes (5~40 nm) and their mechanical properties were determined. It was found that, as the grain size increases, Young's modulus increases showing the reverse Hall-Petch effect. However, the fracture strain decreases in the same region, while the ultimate tensile strength (UTS) rather shows slight increasing behavior. We found that the polycrystalline graphene shows the reverse Hall-Petch effect over the simulated domain of grain size (< 40 nm).