• Journal of the Korean Ceramic Society
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• v.31 no.5
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• pp.505-512
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• 1994

It has been reported that a biocement obtained by mixing CaO-SiO2-P2O5 glass powder and ammonium phosphate solution has biocompatibility as well as high strength. However, the compositional dependence on its hardening and hydroxyapatite formation phenomena has not been studied. Therefore, the main objective of this work is to study the effects of P2O5, MgO in CaO-SiO2 system glass on the hardening and hydroxyapatite formation. When more than 50 mole% of CaO containing CaO-SiO2 glasses was reacted with ammonium phosphate solution, CaNH4PO4.H2O crystal was formed, but the glass with less than 50 mol% of CaO formed (NH4)2HPO4 and NH4H2PO4 crystals which are derived from ammonium phosphate solution without reacting with the glasses. As the amount of P2O5 in CaO-SiO2-P2O5 glass system was increased, the formation of CaNH4PO4.H2O crystal was enhanced. When those hardened samples were reacted with tris-buffer solution, hydroxyapatite was obtained only for the sample with CaNH4PO4.H2O. While the substitution of MgO for CaO decreased the formation of CaNH4PO4.H2O crystal. MgNH4PO4.H2O crystla was formed in high MgO containing glass, which did not react with tris-buffer solution.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.611-614
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• 2003

We have investigated electric field effect on the formation of phase separated composite organic film structure which is utilized by anisotropic phase separation from LC and prepolymer mixtures. Application of bias field resulted in a significant change in liquid crystal alignment between glass substrate and polymer layer. The liquid crystal molecules segregated into the inter-electrodes and formed twisted structure which is the result of imprinting of LC alignment by the bias field on polymer layers during polymerization process.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.15 no.5
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• pp.198-201
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• 2005

Carbon nanofibers were formed on silicon substrate which was applied by negative direct current (DC) bias voltage using microwave plasma-enhanced chemical vapor deposition method. Formation of carbon nanofibers were varied according to the variation of the applied bias voltage. At -250 V, we found that the growth direction of carbon nanofibers followed the applied direction of the bias voltage. Based on these results, we suggest one of the possible techniques to control the growth direction of the carbon nanofibers.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.567-570
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• 2007

Cell gap dependence on anisotropic phase separation was studied. The results showed that the morphology of phase separation depended on cell gap and material parameters. With numerical simulation and experiments, the optimal range of cell gap in the formation of polymer layer and liquid crystal was suggested for given material parameters.

• Journal of the Korean Ceramic Society
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• v.17 no.1
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• pp.35-41
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• 1980

Alumina extraction from raw Hadong kaolin with sulfuric acid was studied to obtain relatively pure alumina. Factors as acid concentration, heating temperature and conditions of ammonium alum crystal formation from extracted solution are also surveyed and most of iron oxide in kaolin is eliminated in crystallization of ammonium alum. Pure crystal obtained from the extracted solution with ammonium sulfate is relatively free from iron containment in mother liquor. Alumina in ammonium alum crystal is converted to gibbsite form after complete hydrolysis in ammonia gas.

• Transactions of the Korean Society of Mechanical Engineers
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• v.19 no.5
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• pp.1308-1318
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• 1995

The influence of varying rotation speed of both crystal and crucible was numerically investigated for the Czochralski silicon-crystal growth. Based on a simplified model assuming flatness of free surfrae, the Navier-Stokes Boussinesq equations were employed to identify the flow pattern, temperature distribution as well as the shape of the melt/crystal interface. The present results showed that the interface shape was relatively convex with respect to the melt at lower pulling rate and tended to be concave as the pulling rate increased. In particular, the experimentally observed gull-winged shape of the interface was qualitatively in agreement with the predicted shape. The rotation of crystal alone little affected the growth system. When the rotation speed of the crucible was increased, there occurred inversion of the interface shape from convex to concave pattern. At rapid rotation of the crucible, an interesting channel formation was predictied primarily due to the assumption of laminar flow.

• Journal of the Mineralogical Society of Korea
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• v.9 no.2
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• pp.82-92
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• 1996

The coarse-grained (0.05∼0.2mm) zeolites occur as the single-crystal cement in the sandstones of the Chunbuk Formation in the Pohang area. The zeolite cements unusually consist of the composite phases of heulandite and clinoptilolite and in a crystal. The zeolite crystals show chemical zoning ranging from 3.56 to 4.10 in Si/(Al+Fe), and tend to become continuously more silicic and alkalic from the margin toward inside of the crystal. The DTA and high-temperature XRD analyses also show complex patterns of both zeolites. Such a composite crystal showing chemical zoning and complex thermo-chemical behaviors indicates that heulandite and clinoptilolite are constituting a solid solution resulted from the coupled substitution of K+Si4+=Ca2+Al3+.

• Journal of Ceramic Processing Research
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• v.19 no.5
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• pp.369-371
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• 2018

The uniform and monodisperse bismuth nanospheres were successfully prepared by simple and convenient solvothermal method. The bismuth nitrate was reduced by ethylene glycol at $150-200^{\circ}C$ for 20-30 hrs. The nanospheres were characterized by powder X-ray diffraction, scanning electron microscopy and transmission electron microscopy. The dispersivity of bismuth nanospheres was investigated using optical microscope. The optimum reaction conditions to prepare the uniform bismuth nanospheres with a narrow diameter range was investigated. The results indicate that the monodisperse bismuth nanospheres prepared at $200^{\circ}C$ possess sizes ranging from 100-200 nm. The formation mechanism of the bismuth nanospheres was hypothesized.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1998.09a
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• pp.71-71
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• 1998

Transition metal ions, such as Sc, V, Cr and Fe, doped rutile crystals were grown by Floating Zone method. Growth conditions for high quality of crystals depending on the concentration of doped ions were investigated. Grown crystals were cut and polished to thin wafers, and then various types of defects such as homogeneities, low angle grain boundaries, scattering centers, and oxygen vacancies were analyzed. The effects of transition metal ions on defect formation are discussed. Results and discussions on absorption and fluorescence spectra and electrical properties of grown crystals were also reported.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04b
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• pp.17-17
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• 2009

We report the invention of a direct growth method termed On-Film Formation of Nanowire (OFF-ON) for making high-quality single-crystal nanowires, i.e. Bi and $Bi_2Te_3$, without the use of conventional templates, catalysts, or starting materials. We have used the OFF-ON technique to grow single crystal semi-metallic Bi and compound semiconductor $Bi_2Te_3$ nanowires from sputtered Bi and BiTe films after thermal annealing, respectively. The mechanism for nanowire growth is stress-induced mass flow along grain boundaries in the polycrystalline films. OFF-ON is a simple but powerful method for growing perfect single-crystal semi-metallic and compound semiconductor nanowires of high aspect ratio with high crystallinity that distinguishes it from other competitive growth approaches that have been developed to date. Our results suggest that Bi and $Bi_2Te_3$ nanowires grown by OFF-ON can be an ideal material system for exploring their unique thermoelectric properties due to their high-quality single crystalline and high conductivity, which have consequence and relevance for high-efficiency thermoelectric devices.