• Title/Summary/Keyword: Crystal formation

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The study of recrystallization of willemite crystal in ceramic glaze (도자기용 아연 결정유의 재결정화 연구)

  • Lee, Hyun-Soo
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.30 no.4
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    • pp.136-142
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    • 2020
  • Crystallization of zinc crystalline glaze requires demanding conditions such as the formation of a nucleating agent and the amount of nucleating agent, and growth of crystalline. Zinc crystalline glaze is hard to utilize in the industry because of its narrow range of the firing temperature, and the crystallization's dependency on the quality of zinc. Stimulation of zinc crystallization and formation of frit enable zinc crystalline glaze to be reconstituted in a various range of firing schedules, leading to the development of a competitive industrial glaze.

Effect on Formation of Liquid Crystal Pitch (액정핏치 형성에 관한연구)

  • Gwon, Yeong-Bae;Ryu, Hae-Il
    • 한국기계연구소 소보
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    • s.13
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    • pp.15-25
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    • 1984
  • The infrared spectra were determined to discover the characteristics and properties of poff-, PV-, and cc-samples, and studied influence on the formation of mesophase or liquid crystal. The experimental results were as follows; a) Samples with long aliphatic side chain appear cracking texture on temperature forming liquid crystal. b) The fine isotropic microstructure appears in a heterogeneous material containing sulfur, 7.18 w%. c) In the size of molecular weight the lighter than 500 form liquid crystal. d) When poff-sample was treated at $400^{\circ}C$ aliphatic hydrocabon compounds decrease, presented well-oriented bulk liquid crystal.

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Operating Parameters for Glutamic Acid Crystallization in Displacement Ion Exchange Chromatography

  • Lee, Kisay
    • Biotechnology and Bioprocess Engineering:BBE
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    • v.2 no.2
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    • pp.117-121
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    • 1997
  • Glutamic acid can be crystallized inside cation exchange column when displacer NaOH concentration is high enough to concentrate displaced glutamic acid beyond its solubility limit. Resulting crystal layer of glutamic acid was moved with liquid phase through the column, and thus could be eluted from the column and recovered in fraction collector. For the purpose of enhancing crystal recovery, effects of operating parameters on the crystal formation were investigated. The increase in the degree of crosslinking of resin favored crystal recovery because of its low degree of swelling. Higher concentration of displacer NaOH was advantageous. If NaOH concentration is too high, however, crystal recovery was lowered due to the solubility-enhancing effects of high pH and ionic strength. The decrease of mobile phase flow rate enhanced crystal recovery because enough time to attain local equilibrium could be provided, but film diffusion would control the overall crystal formation with extremely low flow rate. Lower temperature reduced solubility of glutamic acid and thus favored crystal formation unless the rate of ion exchange was severely reduced. The ion exchange operated by displacement mode coupled with crystallization was advantageous in reducing the burden of further purification steps and in preventing purity-loss resulted from overlapping between adjacent bands.

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Formation of Liquid Crystal Gel with Hydrogenated Lecithin and Its Effectiveness

  • Kim In-Young;Lee Joo-Dong;Ryoo Hee-Chang;Zhoh Choon-Koo
    • Journal of the Society of Cosmetic Scientists of Korea
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    • v.29 no.2 s.43
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    • pp.181-191
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    • 2003
  • This study described about method that form liquid crystal gel (LCG) by main ingredient with hydrogenated lechin (HL) in OW emulsion system. Result of stability test is as following with most suitable LCG's composition. Composition of LCG is as following. To form liquid crystal, an emulsifier used $4.0\;wt\%$ of cetostearyl alcohol (CA) by $4.0\;wt\%$ of HL as a booster, Moisturizers contained $2\;wt\%$ of glycerin and $3.0\;wt\%$ of 1.3-butylene glycol (1,3-BG). Suitable emollients used $3.0\;wt\%$ of cyclomethicone, $3.0\;wt\%$ of isononyl isononanoate (ININ), $3.0\;wt\%$ of cerpric/carprylic triglycerides (CCTG), $3.0\;wt\%$ of macademia nut oil (MNO) in liquid crystal gel formation. On optimum conditions of LCG formation, the pHs were formed all well under acidity or alkalinity conditions. Considering safety of skin, PH was the most suitable $\pm61.0$ ranges. The stable hardness of LCG formation appeared best in $32\;dyne/cm^2.$ Particle of LCG is forming size of $1{\~}20\;{\mu}m$ um range, and confirmed that the most excellent LCG is formed in $1{\~}6\;{\mu}m$ range. According to result that observe shape of LCG with optical or polarization microscope, LCG could was formed, and confirmed that is forming multi-layer lamellar type structure around the LCG. Moisturizing effect measured clinical test about 20 volunteers. As a result, moisturizing effect of LCG compares to placebo cream was increased $30.6\%$. This could predicted that polyol group is appeared the actual state because is adsorbed much to round liquid crystal droplets to multi-lamellar layer's hydrophilic group. It could predicted that polyol group is vast quantity present phase that appear mixed because is adsorbed to round liquid crystal to multi-lamellar layer's hydrophilic group. This LCG formation theory may contribute greatly in cosmetics and pharmacy industry development.

Bridge-type formation of iridium-catalyzed carbon nanofibers across the Gap on MgO substrate and their electrical properties

  • Kim, Kwang-Duk;Kim, Sung-Hoon;Kim, Nam-Seok
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.16 no.5
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    • pp.198-202
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    • 2006
  • We could achieve the bridge-type formation of the iridium-catalyzed carbon nanofibers across the gap on the MgO substrate using microwave plasma enhanced chemical vapor deposition method. On the plane surface area of the MgO substrate, the iridium-catalyzed carbon nanofibers were grown as a lateral direction to the substrate. The bridge-type formation and/or the lateral growth of the iridium-catalyzed carbon nanofibers were interconnected with each other. Finally, they could form an entangled network having the bridge-type formation of the carbon nanofibers across the gap on the substrate and the laterally-grown carbon nanofibers on the plane surface area of the substrate. The entangled network showed the semiconductor electrical characteristics.

Melt-Crystal Interface Shape Formation by Crystal Growth Rate and Defect Optimization in Single Crystal Silicon Ingot (단결정 실리콘 잉곳 결정성장 속도에 따른 고-액 경계면 형성 및 Defect 최적화)

  • Jeon, Hye Jun;Park, Ju Hong;Artemyev, Vladimir;Jung, Jae Hak
    • Current Photovoltaic Research
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    • v.8 no.1
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    • pp.17-26
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    • 2020
  • It is clear that monocrystalline Silicon (Si) ingots are the key raw material for semiconductors devices. In the present industries markets, most of monocrystalline Silicon (Si) ingots are made by Czochralski Process due to their advantages with low production cost and the big crystal diameters in comparison with other manufacturing process such as Float-Zone technique. However, the disadvantage of Czochralski Process is the presence of impurities such as oxygen or carbon from the quartz and graphite crucible which later will resulted in defects and then lowering the efficiency of Si wafer. The heat transfer plays an important role in the formation of Si ingots. However, the heat transfer generates convection in Si molten state which induces the defects in Si crystal. In this study, a crystal growth simulation software was used to optimize the Si crystal growth process. The furnace and system design were modified. The results showed the melt-crystal interface shape can affect the Si crystal growth rate and defect points. In this study, the defect points and desired interface shape were controlled by specific crystal growth rate condition.

Periodic domain formation in $>LiNbO_3$ single crystals during growth

  • Park, Jong-Koen
    • Proceedings of the Korea Association of Crystal Growth Conference
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    • 1998.06a
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    • pp.23-26
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    • 1998
  • The domain formation phenomena of {{{{ { LiLbO}_{ 3} }}}} crystals was investigated and the method for the periodic domain formation in {{{{ { LiLbO}_{ 3} }}}} single crystals during growth was proposed in this study. The strees-induced domain formation mechanism was proposed and explained. The strong piezoelectric effect of{{{{ { LiLbO}_{ 3} }}}} at elevated temperature would be the direct driving force for the inversion of the tensile component of the internal stresses can inverse the original direction of the spontaneous polarization.

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Measurement of Crystal Formation Using a Quartz Crystal Sensor

  • Joung, Ok-Jin;Kim, Young-Han
    • 제어로봇시스템학회:학술대회논문집
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    • 2004.08a
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    • pp.1659-1661
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    • 2004
  • Measurement of supersaturation is important in crystallization processes, because it is one of key factors to control crystal size distribution and shape determining product quality. A monitoring system of the supersaturation using a quartz crystal sensor is applied to the supersaturation measurement. From the variation of resonant frequency, the beginning of the formation of salt crystal on the sensor surface is detected while the sensor is directly cooled down. The degree of supersaturation is computed from the solubility difference at the temperatures of the salt solution and the sensor. The performance of the propsed system of the supersaturation measurement is examined by applying the system to the crystallization of three different salt solutions. The experimental outcome compared with eye observation result and photographic analysis indicates that the proposed system is effective and useful to determine the supersaturation in the crystallization process. In addition, the microscopic monitoring of the initial stage crystallization is available with the sensor system.

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Formation Mechanism of the Micro Precipitates Causing Oxidation Induced Stacking Faults in the Czochralski Silicon Crystal.

  • Kim, Young-K.
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.1 no.1
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    • pp.66-73
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    • 1991
  • During the growth of macroscopically dislocation-free Czochralski silicon crystal, micro precipitates causing stacking faults in the silicon wafer during the oxidation are formed Thermal history the cryscausing acquire during the growth process is known to be a key factor determining the nucleation of this micro precipitates. In this article, various mechanisms suggested on the formation of microdefects in the silicon crystal are reviewed to secure the nucleation mechanism of the micro precipitates causing OSF whose pattern is normally ring or annular in CZ silicon crytal. B-defects which are known as vacancy clustering are considered to be the heterogeneous nucleation sites for the micro precipitates causing OSF in the CZ silicon crystals.

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Growth parameters and formation of slip plane in ZnWO4 single crystals by the Czochralski method

  • Lim, Chang-Sung
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.20 no.5
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    • pp.202-206
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    • 2010
  • Single crystals of $ZnWO_4$ were grown successfully in the [100], [010] and [001] directions using the Czochralski method. The growth parameters and the formation of slip plane in $ZnWO_4$ crystals were studied. $ZnWO_4$ crystals had a cleavage plane of (010). The dislocation density on the (010) plane at the center of the crystal was lower than that of the edge region. It was inferred that the high density at the edge of the crystals was caused by the thermal gradient during crystal growth. The etch pit arrangement revealed the (100) slip plane to be most active during crystal growth.