• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.334-337
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• 1996

Si anisotropic etching is a key technology for micromachining. The main advantages of tetramethyl ammonium hydroxide (TMAH)-based solution are their full compatibility with IC process. In this work the anisotropic etching of single crystal Si in a TMAH (($CH_3$)$_4$NOH) based solution was studied. The influence of the addition of IPA to TMAH solution on their etching characteristics was also presented. The crystal planes bounding the etch front and their etch rates were determined as a function of temperature, crystal orientation, and etchant concentration. The etch rates of (100) oriented Si crystal planes decreased linearly with increasing the IPA concentration, The etched (100) planes were covered by Pyramidal-shaped hillocks below 15 wt.%, but very smooth surfaces were obtained above 20 wt.%. The addition of IPA to TMAH solution leads to smoother surfaces of sidewalls etched planes.

• Journal of the Korean Society for Precision Engineering
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• v.10 no.1
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• pp.147-152
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• 1993

The lapping characteristics of single crystal diamond are studied by considering the crystallographic anisotropy. It is introduced for lapping method to identify crystallographic orientantion by the X-ray diffraction and to measure lapping force ratio, lapping temperature and lapping wear. Diamound bonded wheels are used for lapping under dry condition. On the lapping {110} and {100} planes, it shows remarkable crystallographic anistropy. The lapping force ratio, temperature and wear become gerater with sliding direction along the <100> than along <110>. The results also show that the wear of diamond is influenced by mechanical work(tangential lapping force * lapping distance) as well by lapping speed.

• Korean Journal of Crystallography
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• v.11 no.4
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• pp.207-211
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• 2000

In a Czochralski silicon single crystal, the relation between the growth twin and the crystal morphology was investigated. The growth twin is nucleated on the {111} facet planes near the growth ridges. When a {111} growth twin is formed in the <100> silicon crystal, the growth ridge where twin is nucleated will continuous through the twin plane. Other two ridges at the 90。 apart will be displaced about 33° and be deformed to facets. The ridge on the opposite side of twin nucleation will disappear by forming a slight hill. Because the growth ridges of silicon is due to the {111} planes, the variation in the growth ridge formation can be predicted clearly by considering the change of the {111} plane traces in the stereographic projection after twining.

• Journal of Magnetics
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• v.19 no.4
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• pp.333-339
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• 2014

Single crystal growth of $BaFe_{12}O_{19}$ by the solid state crystal growth method was attempted. Seed crystals of ${\alpha}-Fe_2O_3$ were pressed into pellets of $BaFe_{12}O_{19}$ + 2 wt% $BaCO_3$ and heat-treated at temperatures between $1150^{\circ}C$ and $1250^{\circ}C$ for up to 100 hours. Instead of single crystal growth taking place on the seed crystal, BaO diffused into the seed crystal and reacted with it to form a polycrystalline reaction layer of $BaFe_{12}O_{19}$. The microstructure, chemical composition and structure of the reaction layer were studied using scanning electron microscopy-energy dispersive spectroscopy (SEM-EDS), x-ray Diffraction (XRD) and micro-Raman scattering and confirmed to be that of $BaFe_{12}O_{19}$. XRD showed that the reaction layer shows a strong degree of orientation in the (h00)/(hk0) planes in the sample sintered at $1200^{\circ}C$. $BaFe_{12}O_{19}$ layers with a degree of orientation in the (hk0) planes could also be grown by heat-treating an ${\alpha}-Fe_2O_3$ seed crystal buried in $BaCO_3$ powder.

• Journal of Surface Science and Engineering
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• v.31 no.1
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• pp.24-33
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• 1998

Effects of pH and supporting salts on the characteristics of electrogalvanzied coating in sulfate bath are investigated. The fine grain size is obtained and the whiteness with the amount of supporting salts or pH increased at more than current density of 100A/$dm^2$<\TEX>, With supporting salts increased, the electro-conductivity of the bulk solution increases and the cell voltage decreases, while the width of the cathode burned edge gets wider because it seems that the increased overpotential the vicinity of cathode causes the decreases, of limiting current density. When the amount of supporting salts or pH of sulfate bath decreases, the zinc crystals have preferred orientation (001) planes. However when the amount of supporting salts or pH increase, the crystal texture has less (001) planes and gets to have random crystal planes.

• Korean Journal of Crystallography
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• v.7 no.1
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• pp.88-93
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• 1996

The multiplicity factor, which is defined as the number of different planes in a form having identical interplanar spacing and identical intensity, is tabulated here for the 21 noncentrosymmetric point groups on the basis of their symmetries.

• Korean Journal of Materials Research
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• v.22 no.8
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• pp.397-402
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• 2012

Morphological control on hydroxyapatite crystals has attractive prospects in research to clarify the effects of crystal planes on biological performance. Hydrothermal processing is known as a typical type of processing for fabricating well-grown crystals with unique morphology. The purpose of the present study is to examine the feasibility of well-crystallized crystals with oriented structures through hydrothermal treatment of calcite. A single crystal of calcite was applied to hydrothermal treatment in a phosphate solution at $160^{\circ}C$. Rod-shaped hydroxyapatite crystals with micrometer-size were formed on the {100} face of calcite after treatment, while nanometer-sized hydroxyapatite crystals were formed on the (111). The hydroxyapatite crystals formed on each plane were not morphologically changed with increasing treatment periods. An oriented structure of rod-shaped hydroxyapatite was constructed after hydrothermal treatment of {100} planes on the calcite single, while such orientation was not observed on the (111) plane after the treatment. The layer of hydroxyapatite formed on the {100} plane was thicker than that of the (111) plane. The {100} plane of calcite shows a higher reactivity than that of the (111) plane, which results in rapid crystal growth of hydroxyapatite. The difference in the morphology of the formed hydroxyapatite was governed by the reactivity of each crystal plane exposed to the surrounding solution.

• Korean Journal of Metals and Materials
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• v.49 no.9
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• pp.726-731
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• 2011

The present work shows how the flexural displacement-induced fracture strength of silicon devices, whose back surfaces have wafer grinding-induced scratch marks, depends on the crystallographic orientation. Experimental results indicate that silicon devices with scratch marks parallel to their lateral direction (i.e. reference axis in this work) are very susceptible to flexural fracture, as compared to devices with marks which deviated from the direction. The 3-point bending test shows that the fracture strength of silicon devices having marks which are oriented away from the reference axis is 2.6 times higher than that of devices with marks parallel to the axis. It was particularly interesting to see that silicon devices with identical preferred marks even reveal different fracture strengths, depending on whether the marks are involved in specific crystal planes such as {111} or {011}, called cleavage planes. This work demonstrates that silicon devices with the reference axis-aligned scratch marks not existing on such cleavage planes can have higher fracture strength approximately 20% higher than those existing on the planes.

• Journal of the Optical Society of Korea
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• v.18 no.1
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• pp.45-49
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• 2014

Well-crystallized $BaSi_2O_5:Eu^{2+}$ phosphor films were synthesized by heat treatment of spin-coated BaO:Eu on $SiO_2$ glass. We investigated luminescence-structure properties of these phosphor films as a function of heat-treatment temperature. From x-ray diffraction patterns, our $BaSi_2O_5:Eu^{2+}$ phosphor films revealed that (111)- and (204)-crystal planes of $BaSi_2O_5$ crystal were dominantly increased with an increase of heat-treatment temperature. Photoluminescence intensities of $BaSi_2O_5:Eu^{2+}$ phosphor films were increased with amount of these crystal planes. It can be explained that $Eu^{2+}$ ions were stably occupied at specific crystal orientation of $BaSi_2O_5$ crystal, enhancing the luminescent intensities of $BaSi_2O_5:Eu^{2+}$ phosphor films. In addition, our $BaSi_2O_5:Eu^{2+}$ phosphor films had transmittance of 70% at 510 nm,.due to the dense morphology and specific crystallinity of $BaSi_2O_5:Eu^{2+}$ phosphor films.

• Proceedings of the KIEE Conference
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• 1999.11d
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• pp.1128-1130
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• 1999

Optical encoding method of images using random-phase encoding in both input and Fourier Planes was proposed by Javidi and his group, and the method was realized experimentally by Singh and his group with use of a photorefractive crystal and a phase conjugate wave.[1-2] Recently various techniques have been proposed theorically and experimentally. These include the method using one random-phase mask in the Fourier plane or two random-phase masks in the input and the Fresnel planes.[3] We demonstrate the difference and the problem of the methods using one or two random-phase masks in the Fourier or Fresnel plane. We perform the encoding and decoding in $LiNbO_3$ crystal using degenerate four-wave mixing.