• Title/Summary/Keyword: Crystal Orientation of Grain

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비납계 (Na,K)NbO3-M(Cu,Nb)O3, (M = Ca, Sr, Ba) 압전 세라믹의 비정상 결정 성장 거동 비교 (Comparison of Abnormal Grain Growth Behavior of Lead-Free (Na,K)NbO3-M(Cu,Nb)O3, (M = Ca, Sr, Ba) Piezoelectric Ceramics)

  • 정승운;임지호;정한보;지성엽;최승곤;정대용
    • 한국재료학회지
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    • 제30권7호
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    • pp.343-349
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    • 2020
  • NKN [(Na,K)NbO3] is a candidate lead-free piezoelectric material to replace PZT [Pb(Zr,Ti)O3]. A single crystal has excellent piezoelectric-properties and its properties are dependent of the crystal orientation direction. However, it is hard to fabricate a single crystal with stoichiometrically stable composition due to volatilization of sodium during the growth process. To solve this problem, a solid solution composition is designed (Na,K)NbO3-Ba(Cu,Nb)O3 and solid state grain growth is studied for a sizable single crystal. Ceramic powders of (Na,K)NbO3-M(Cu,Nb)O3 (M = Ca, Sr, Ba) are synthesized and grain growth behavior is investigated for different temperatures and times. Average normal grain sizes of individual specimens, which are heat-treated at 1,125 ℃ for 10 h, are 6.9, 2.8, and 1.6 ㎛ for M = Ca, Sr, and Ba, respectively. Depending on M, the distortion of NKN structure can be altered. XRD results show that (NKN-CaCuN: shrunken orthorhombic; NKN-SrCuN: orthorhombic; NKN-BaCuN: cubic). For the sample heat-treated at 1,125 ℃ for 10 h, the maximum grain sizes of individual specimens are measured as 40, 5, and 4,000 ㎛ for M = Ca, Sr, and Ba, respectively. This abnormal grain size is related to the partial melting temperature (NKN-CaCuN: 960 ℃; NKN-SrCuN: 971 ℃; NKN-BaCuN: 945 ℃).

LASER WELDING OF SINGLE CRYSTAL NICKEL BASE SUPERALLOY CMSX-4

  • Yanagawa, Hiroto;Nakamura, Daisuke;Hirose, Akio;Kobayashi, Kojiro F.
    • 대한용접접합학회:학술대회논문집
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    • 대한용접접합학회 2002년도 Proceedings of the International Welding/Joining Conference-Korea
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    • pp.193-198
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    • 2002
  • In 1his paper, applicability of laser welding to joining process of single crystal nickel base superalloy turbine blades was investigated. Because heat input of laser welding is more precisely controlled 1han TIG welding, it is possible to optimize solidification microstructure of the welds. Since in single crystal nickel base superalloy the crystal orientation have a significant effect on the strength, it is important to control the solidification microstructure in the fusion zone. A single crystal nickel base supera1loy, CMSX-4, plates were bead-on welded and butt welded using a $CO_2$ laser. The effects of microstructure and crystal orientation on properties of the weld joints were investigated. In bead-on weldling, welding directions were deviated from the base metal [100] direction by 0, 5, 15 and 30 degrees. The welds with deviation angles of 15 and 30 degrees showed fusion zone transverse cracks. As the deviation angles became larger, the fusion zone had more cracking. In the cross section microstructure, the fusion zone grains in 0 and 5 degrees welds grew epitaxially from the base metal spins except for the bead neck regions. The grains in the bead neck regions contained stray crystals. As deviation angles increased, number of the stray crystals increased. In butt welding, the declinations of the crystal orientation of the two base metals varied 0, 5 and 10 degrees. All beads had no cracks. In the 5 degrees bead, the cross section and surface microstructures showed that the fusion zone grains grew epitaxially from the base metal grains. However, the 10 degrees bead, the bead cross section and surface contained the stray crystals in the center of the welds. Orientations of the stray crystals accorded with the heat flow directions in the weld pool. When the welding direction was deviated from the base metal [100] direction, cracks appeared in the area including the stray crystals. The cracks developed along the grain boundaries of the stray crystals with high angles in the final solidification regions at the center of the welds. The fracture surfaces were covered with liquid film. The cracks, therefore, found to be solidification cracks due to the presence of low melting eutectic. As the results, in both bead-on welding and butt welding the deviation angles should be control within 5 degrees for preventing the fusion zone cracks. To investigate the mechanical properties of the weld joints, high temperature tensile tests for bead-on welds with deviation angles of 0 and 5 degrees and the butt welds with dec1ination angles of 0, 5 and 10 degrees were conducted at 1123K. The the tensile strength of all weld joints were more 1han 800MPa that is almost 80% of the tensile strength of the base metal. The strength of the laser weld joints were more than twice that of tue TIG weld joints with a filler metal of Inconel 625. The results reveals 1hat laser welding is more effective joining process for single crystal nickelbase superalloy turbine blades 1han TIG welding.

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Glass/Al/$SiO_2$/a-Si 구조에서 마이크론 크기의 구멍을 통한 금속유도 실리콘 결정화 특성 (Characteristics of metal-induced crystallization (MIC) through a micron-sized hole in a glass/Al/$SiO_2$/a-Si structure)

  • 오광환;정혜정;지은옥;김지찬;부성재
    • 한국신재생에너지학회:학술대회논문집
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    • 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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    • pp.59.1-59.1
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    • 2010
  • Aluminum-induced crystallization (AIC) of amorphous silicon (a-Si) is studied with the structure of a glass/Al/$SiO_2$/a-Si, in which the $SiO_2$ layer has micron-sized laser holes in the stack. An oxide layer between aluminum and a-Si thin films plays a significant role in the metal-induced crystallization (MIC) process determining the properties such as grain size and preferential orientation. In our case, the crystallization of a-Si is carried out only through the key hole because the $SiO_2$ layer is substantially thick enough to prevent a-Si from contacting aluminum. The crystal growth is successfully realized toward the only vertical direction, resulting a crystalline silicon grain with a size of $3{\sim}4{\mu}m$ under the hole. Lateral growth seems to be not occurred. For the AIC experiment, the glass/Al/$SiO_2$/a-Si stacks were prepared where an Al layer was deposited on glass substrate by DC sputter, $SiO_2$ and a-Si films by PECVD method, respectively. Prior to the a-Si deposition, a $30{\times}30$ micron-sized hole array with a diameter of $1{\sim}2{\mu}m$ was fabricated utilizing the femtosecond laser pulses to induce the AIC process through the key holes and the prepared workpieces were annealed in a thermal chamber for 2 hours. After heat treatment, the surface morphology, grain size, and crystal orientation of the polycrystalline silicon (pc-Si) film were evaluated by scanning electron microscope, transmission electron microscope, and energy dispersive spectrometer. In conclusion, we observed that the vertical crystal growth was occurred in the case of the crystallization of a-Si with aluminum by the MIC process in a small area. The pc-Si grain grew under the key hole up to a size of $3{\sim}4{\mu}m$ with the workpiece.

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다결정 실리콘 태양전지 제조를 위한 비정절 실리콘의 알루미늄 유도 결정화 공정 및 결정특성 연구 (Investigation of aluminum-induced crystallization of amorphous silicon and crystal properties of the silicon film for polycrystalline silicon solar cell fabrication)

  • 정혜정;이종호;부성재
    • 한국결정성장학회지
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    • 제20권6호
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    • pp.254-261
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    • 2010
  • 본 연구에서는 다결정 실리콘 태양전지 응용을 위한 다결정 실리콘 씨앗층의 제조와 그의 특성에 관한 연구를 수행하였다. 다결정 실리콘 씨앗층은 glass/Al/$Al_2O_3$/a-Si 구조를 이용하여 aluminum-induced layer exchange(ALILE) 고정으로 제조하였으며, 자연산화막부터 50 nm까지 다양한 크기로 $Al_2O_3$ 막두께를 변화시켜 알루미늄 유도 결정화 공정에서 막의 두께가 결정화 특성 및 결정결함, 결정크기에 미치는 영향에 대하여 조사하였다. 연구결과, ALILE 공정으로 생성된 다결정 실리콘막의 결함은 $Al_2O_3$ 막의 두께가 증가할수록 함께 증가한 반면, 결정화 정도와 결정입자의 크기는 $Al_2O_3$막의 두께가 증가할수록 감소하였다. 본 실험에서는 16 nm 두께 이하의 앓은 $Al_2O_3$ 막의 구조에서 평균 약 $10\;{\mu}m$ 크기의 sub-grain 결정립을 얻었으며, 결정성은 <111> 방향의 우선 배향성 특성을 보였다.

Electron Scattering at Grain Boundaries in Tungsten Thin Films

  • 최두호;김병준;이승훈;정성훈;김도근
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.243.2-243.2
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    • 2016
  • Tungsten (W) is recently gaining attention as a potential candidate to replace Cu in semiconductor metallization due to its expected improvement in material reliability and reduced resistivity size effect. In this study, the impact of electron scattering at grain boundaries in a polycrystalline W thin film was investigated. Two nominally 300 nm-thick films, a (110)-oriented single crystal film and a (110)-textured polycrystalline W film, were prepared onto (11-20) Al2O3 substrate and thermally oxidized Si substrate, respectively in identical fabrication conditions. The lateral grain size for the polycrystalline film was determined to be $119{\pm}7nm$ by TEM-based orientation mapping technique. The film thickness was chosen to significantly exceed the electron mean free path in W (16.1 and 77.7 nm at 293 and 4.2 K, respectively), which allows the impact of surface scattering on film resistivity to be negligible. Then, the difference in the resistivity of the two films can be attributed to grain boundary scattering. quantitative analyses were performed by employing the Mayadas-Shatzkes (MS) model, where the grain boundary reflection coefficient was determined to be $0.42{\pm}0.02$ and $0.40{\pm}0.02$ at 293 K and 4.2 K, respectively.

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CoCr(Mo) 박막의 자기적 특성 및 미세구조에 미치는 Si 하지층의 영향 (The Effect of Si Underlayer on the Magnetic Properties and Crystallographic Orientatation of CoCr(Mo) Thin Film)

  • 이호섭;남인탁
    • 한국자기학회지
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    • 제9권5호
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    • pp.256-262
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    • 1999
  • DC/RF magnetron sputtering system을 이용하여 CoCr 박막 및 CoCrMo 박막의 Si 하지층의 도입에 따른 자기적 특성 및 미세구조의 변화에 대해 살펴보았다. 박막의 자기적 특성을 VSM을 통하여 측정한 결과, 고온에서 증착된 CoCrMo/Si 박막의 경우가 CoCr/Si 박막과는 달리 Si 하지층의 두께가 증가할수록 수직보자력값이 증가하는 것을 알 수 있었으며 AFM과 SEM을 이용한 surface morphology의 변화를 통하여 결정립 미세화와 균일화가 수직보자력을 증진시킴을 알 수 있었다. 또한, 박막의 결정배향성 및 미세구조를 XRD와 SEM을 통하여 관찰한 결과, CoCrMo/Si 박막의 (0002)우선 배향성이 CoCr/Si 박막의 (0002) 우선 배향성보다 상당히 크게 증진된 것을 볼 수 있었으며, SEM의 단면 측정을 통하여 CoCrMo/Si 박막과 CoCr/Si 박막의 기판 표면에서 성장하는 columnar 구조의 발달을 잘 관찰할 수 있었다.

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단결정 Ni기 초내열합금 액상확산접합부 단결정화에 미치는 접합방위차의 영향 (Effect of Bonding Misfit on Single Crystallization of Transient Liquid Phase Bonded Joints of Ni Base Single Crystal Superalloy)

  • 김대업
    • Journal of Welding and Joining
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    • 제20권5호
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    • pp.93-98
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    • 2002
  • The effect of bonding misfit on single crystallization of transient liquid phase (TLP) bonded joints of single crystal superalloy CMSX-2 was investigated using MBF-80 insert metal. The bonding misfit was defined by (100) twist angle (rotating angle) at bonded interface. TLP bonding of specimens was carried out at 1523K for 1.8ks in vacuum. The post-bond heat treatment consisted of the solution and sequential two step aging treatment was conducted in the Ar atmosphere. The crystallographic orientation analysis across the TLP bonded joints was conducted three dimensionally using the electron back scattering pattern (EBSP) method. EBSP analyses f3r the bonded and post bonded heat treated specimens were conducted. All bonded joints had misorientation centering around the bonded interface for as-bonded and post-bond heat treated specimens with rotating angle. The average misorientation angle between both solid phases in bonded interlayer was almost identical to the rotating angle at bonded interface. HRTEM observation revealed that the atom arrangement of both solid phases in bonded interlayer was quite different across the bonded interface. It followed that grain boundary was formed in bonded interface. It was confirmed that epitaxial growth of the solid phase occurred from the base metal substrates during TLP bonding and single crystallization could not be achieved in joints with rotating angle.

파형전류전해에 의한 은-주석합금 전착층의 조성 및 현미경조직 (The Composition and the Microstructure of Pulse current electrodeposits of SilverTin alloy)

  • 예길촌;김용웅;김진수
    • 한국표면공학회지
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    • 제26권5호
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    • pp.245-254
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    • 1993
  • The effects of pulse current electrolysis conditions on the composition and the microstructure of Ag-Sn alloy were studied by using a pyrophosphate bath. Both cathode current efficiency and throwing power of alloy deposits formed under pulse plating conditions, decreased with increasing mean current density, and lower than those under D.C. electrolysis condition. Tin content of Ag-Sn alloy decreased noticebly with in-creasing the mean current density, while it increased with the increase of On-time from 1 to 10 ms. The pre-ferred orientation of Ag-Sn alloy changed with increasing cathode overpotential in the sequence of (100)longrightarrow(100)+(111)longrightarrow(111) at $20^{\circ}C$ and (110)longrightarrow(111)longrightarrow(111)+(100) at $30^{\circ}C$. The effective crystal grain size of the alloy was decreased by decreasing temperature from $30^{\circ}C$ to $20^{\circ}C$ and the surface structure of them was related to the preferred orientation.

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변형속도에 따른 M1 마그네슘 합금의 고온변형 중 미세조직 형성 거동 (Effect of Strain Rate on Microstructure Formation Behavior of M1 Magnesium Alloy During High-temperature Deformation)

  • 이규정;김권후
    • 열처리공학회지
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    • 제32권1호
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    • pp.1-11
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    • 2019
  • In this study, microstructure evolution and crystallographic orientation are investigated under various deformation conditions in M1 magnesium alloy. M1 magnesium ingot was rolled at 673 K with the rolling reduction of 30%. The compression test specimens were machined out from rolled plate, and then the specimens were annealed at 823 K for 1h. Uniaxial compression tests were conducted at 723 K and under the strain rate ranging from $5.0{\times}10^{-4}s^{-1}$ to $5.0{\times}10^{-2}s^{-1}$ up to a true strain of -1.0. For observation of crystal orientation distribution, EBSD measurement was performed. Occurrence of the dynamic recrystallization and grain boundary migration were confirmed in all case of the specimens. The distribution of the grains is not uniformed in the experimental conditions.

Recent Development of Science and Technology of Hard Materials in Japan

  • Hayashi, Koji
    • 한국분말재료학회지
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    • 제5권4호
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    • pp.303-311
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    • 1998
  • Hard materials such as hardmetal, coated hardmetal, cermet, ceramics and diamond or c-BN sintered compact are a kind of grain-dispersed alloy with high volume of hard particles. These are used for cutting tools, wear-resistant tools, rock bits, high pressure apparatus, etc. The annual production in Japan is about 1.7 billion dollars (200 billion yen). This is greatly owed to the development in science and technology which has been accomplished by applying new concepts such as fine or uniform grain microstructure, orientation of crystal grains, functionally graded material, artificial lattice and coherent bonding in recent years. In this review, the development in recent years in Japan is briefly summarized.

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